2024年3月4日发(作者：老文静)
元器件交易网®T4 Series4A TRIACS
A2SNUBBERLESS™ & LOGIC LEVEL
MAIN FEATURES:SymbolIT(RMS)VDRM/VRRMIGTT (Q1)Value4600 to 8005 to 35UnitAVmAA1A2GGA1A2A2A1A2GDESCRIPTIONBased on ST’s Snubberless / Logic level technolo-gy providing high commutation performances, theT4 series is suitable for use on AC inductive are recommended for applications usinguniversal motors, such as kitchenaid equipments, power tools, dishwashers,...Available in a fully insulated package, -...W version complies with UL standards (ref.E81734).DPAK(T4-B)IPAK(T4-H)A2A1A2GA1A2GTO-220AB(T4-T)ISOWATT 220AB(T4-W)ABSOLUTE MAXIMUM RATINGSSymbolIT(RMS)ParameterRMS on-state current (full sine wave)DPAK / IPAKTO-220ABISOWATT 220ABITSMI²tdI/dtIGMPG(AV)TstgTjNon repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)I²t Value for fusingCritical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 nsPeak gate currentAverage gate power dissipationStorage junction temperature rangeOperating junction temperature rangeF = 50 HzF = 60 HzTc = 110°CTc = 105°Ct = 20 mst = 16.7 ms30315.1Tj = 125°CTj = 125°CTj = 125°C5041- 40 to + 150- 40 to + 125A²sA/µsAW°CAValueUnitA4tp = 10 msF = 120 Hztp = 20 µsJune 2003 - Ed: 51/8
元器件交易网4 SeriesELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)SymbolIGT (1)VGTVGDIH (2)ILdV/dt (2)Test ConditionsQuadrantT405VD = 12 V RL = 30 ΩVD = VDRM RL = 33 kΩTj = 125°CIT = 100 mAIG = 1.2 IGTI - IIIIIVD = 67 %VDRM gate open Tj = 125°C(dV/dt)c = 10 V/µs Tj = 125°CWithout snubber
Tj = 125°.(dI/dt)c (2)(dV/dt)c = 0.1 V/µs Tj = 125°CI - II - IIII - II - IIII - II - .101015201.80.9-5T4T410101.30.2152530402.72.0-355060400--2.5V/µsA/msT43535mAVVmAmAUnitSTATIC CHARACTERISTICSSymbolVTM (2)Vto (2)Rd (2)IDRMIRRMNote 1: minimum IGT is guaranted at 5% of IGT 2: for both polarities of A2 referenced to A1Test ConditionsITM = 5.5 A tp = 380 µsThreshold voltageDynamic resistanceVDRM = VRRMTj = 25°CTj = 125°CTj = 125°CTj = 25°CTj = 125°1.60.912051UnitVVmΩµAmATHERMAL RESISTANCESSymbolRth(j-c)Junction to case (AC)ParameterDPAKIPAKTO-220ABISOWATT220ABRth(j-a)Junction to ambientS = 0.5 cm²DPAKTO-220ABISOWATT220ABIPAKS = Copper surface under tabValue2.64.07060100Unit°C/W°C/W2/8T
元器件交易网4 SeriesPRODUCT SELECTORPart NumberT405-xxxBT405-xxxHT405-xxxTT405-xxxWT410-xxxBT410-xxxHT410-xxxTT410-xxxWT435-xxxBT435-xxxHT435-xxxTT435-xxxWXXXXXXXXXXXXVoltage (xxx)600 V700 VXXXXXXXXXXXX800 VXXXXXXXXXXXX5 mA5 mA5 mA5 mA10 mA10 mA10 mA10 mA35 mA35 mA35 mA35 mALogic levelLogic levelLogic levelLogic levelLogic levelLogic levelLogic levelLogic levelSnubberlessSnubberlessSnubberlessSnubberlessDPAKIPAKTO-220ABISOWATT220ABDPAKIPAKTO-220ABISOWATT220ABDPAKIPAKTO-220ABISOWATT220ABSensitivityTypePackageORDERING INFORMATION
T 4 05 - 600 B (-TR)TRIACSERIESCURRENT:4AVOLTAGE:600:600V700:700V800:800VSENSITIVITY:05:05mA10:10mA35:35mAPACKAGE:B:DPAKH:IPAKT:TO-220ABW:ISOWATT220ABPACKING MODE:Blank:Tube-TR:DPAKTape & ReelOTHER INFORMATIONPart NumberT4xx-yyyBT4xx-yyyB-TRT4xx-yyyHT4xx-yyyTT4xx-yyyWNote: xx = sensitivity, yyy = voltageMarkingT4xxyyyBT4xxyyyBT4xxyyyT4xxyyyTT4xxyyyWWeight0.3 g0.3 g0.4 g2.3 g2.1 gBasequantity752500755050PackingmodeTubeTape & reelTubeTubeTube3/8
元器件交易网4 SeriesFig. 1: Maximum power dissipation versus RMSon-state current (full cycle).P(W)65432100.00.51.0Fig. 2-1: RMS on-state current case versus tem-perature (full cycle).IT(RMS)(A)IT(RMS)(A)1.52.02.53.03.54.04.54.03.53.02.52.01.51.00.50.0TO-220AB/DPAK/IPAKISOWATT220ABTc(°C)5Fig. 2-2: RMS on-state current versus ambienttemperature (printed circuit FR4, copper thick-ness: 35µm),full (RMS)(A)DPAK(S=0.5cm²)Fig. 3: Relative variation of thermal impedanceversus pulse duration.K=[Zth/Rth]1E+0Rth(j-c)ISOWATT220ABTO-220AB/DPAK/IPAK2.01.81.61.41.21.00.80.60.40.20.0Rth(j-a)1E-1DPAK/IPAKTO-220AB/ISOWATT220ABTamb(°C)51E-21E-21E-1tp(s)1E+01E+11E+25E+2Fig. 4: Relative variation of gate trigger current,holding current and latching current versusjunction temperature (typical values).IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]2.52.01.5IH & ILIGTFig. 5: Surge peak on-state current versusnumber of (A)353025201510RepetitiveTc=110°CNon repetitiveTj initial=25°Ct=20msOne cycle1.00.5Tj(°C)50.0-40-201201400Number of cycles/8
元器件交易网4 SeriesFig. 6: Non-repetitive surge peak on-statecurrent for a sinusoidal pulse with widthtp<10ms, and corresponding value of I² (A),I²t (A²s)500100dI/dt limitation:50A/µsITSMFig. 7: On-state characteristics (maximumvalues).ITM(A)30.0Tj initial=25°C10.0Tj=Tj max.10tp (ms)10.010.101.001.0I²tVTM(V)10.00Tj max.:Vto= 0.90VRd= 120 mΩ0.10.00.51.01.52.02.53.03.54.04.55.0Fig. 8: Relative variation of critical rate ofdecrease of main current versus (dV/dt)c (typicalvalues).(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c2.42.22.01.81.61.41.21.00.80.60.40.20.00.1Fig. 9: Relative variation of critical rate ofdecrease of main current versus junctiontemperature.(dI/dt)c [Tj] / (dI/dt)c [Tj specified]654T435321Tj(°C)100.0T410T405(dV/dt)c (V/µs)1.010.125Fig. 10: DPAK thermal resistance junction toambient versus copper surface under tab (printedcircuit board FR4, copper thickness: 35µm).Rth(j-a) (°C/W)1403020100DPAKS(cm²)83236405/8
元器件交易网4 SeriesPACKAGE MECHANICAL DATADPAK (Plastic)2.202.400.901.100.030.230.640.905.205.400.450.600.480.606.006.206.406.604.404.609.3510.100.80 typ.0.601.000.2 typ.0°8°0.0860.0940.0350.0430.0010.0090.0250.0350.2040.2120.0170.0230.0180.0230.2360.2440.2510.2590.1730.1810.3680.3970.031 typ.0.0230.0390.007 typ.0°8°FOOTPRINT DIMENSIONS (in millimeters)DPAK (Plastic)6.76.7331.62.32.31.66/8
元器件交易网4 SeriesPACKAGE MECHANICAL DATAISOWATT220AB (Plastic)Max.4.404.602.502.702.502.750.400.700.751.001.151.701.151.704.955.202.402.7010.0010.4016.00 typ.28.6030.609.8010.6015.9016.409.009.303.003.200.1730.1810.0980.1060.0980.1080.0160.0280.0300.0390.0450.0670.0450.0670.1950.2050.0940.1060.3940.4090.630 typ.1.1251.2050.3860.4170.6260.6460.3540.3660.1180.126PACKAGE MECHANICAL DATATO-220AB (Plastic)Typ.0.1470.5510.4090.0340.0510.1810.027Max.0.625b2LFIAAa1a2Bb1b2Cc1c2eFII4Ll2l3M15.2015.900.598l4a1c2l3l2a2b1eMc12.402.720.0940.1072.402.700.0940.1066.206.600.2440.2593.753.850.1470.15115.8016.4016.800.6220.6460.6612.652.950.1040.1161.141.142.601.701.700.0440.0440.1020.0660.0667/8
元器件交易网4 SeriesPACKAGE MECHANICAL DATAIPAK (Plastic).0.0940.0430.0510.0350.2120.0330.0370.0230.0230.2440.2600.1810.6410.3700.0470.0310.03910°.2.41.11.30.95.40.85DHLL1B6B3BV1A1B5GCA3AA1A3BB2B3B5B6CC2DEGHLL1L2V12.20.90.70.645.20.30.450.4866.44.415.990.80.810°0.950.60.66.26.64.616.39.41.210.0170.0190.2360.2520.1730.6260.3540.031Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2003 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - ://8/8
2024年3月4日发(作者：老文静)
元器件交易网®T4 Series4A TRIACS
A2SNUBBERLESS™ & LOGIC LEVEL
MAIN FEATURES:SymbolIT(RMS)VDRM/VRRMIGTT (Q1)Value4600 to 8005 to 35UnitAVmAA1A2GGA1A2A2A1A2GDESCRIPTIONBased on ST’s Snubberless / Logic level technolo-gy providing high commutation performances, theT4 series is suitable for use on AC inductive are recommended for applications usinguniversal motors, such as kitchenaid equipments, power tools, dishwashers,...Available in a fully insulated package, -...W version complies with UL standards (ref.E81734).DPAK(T4-B)IPAK(T4-H)A2A1A2GA1A2GTO-220AB(T4-T)ISOWATT 220AB(T4-W)ABSOLUTE MAXIMUM RATINGSSymbolIT(RMS)ParameterRMS on-state current (full sine wave)DPAK / IPAKTO-220ABISOWATT 220ABITSMI²tdI/dtIGMPG(AV)TstgTjNon repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)I²t Value for fusingCritical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 nsPeak gate currentAverage gate power dissipationStorage junction temperature rangeOperating junction temperature rangeF = 50 HzF = 60 HzTc = 110°CTc = 105°Ct = 20 mst = 16.7 ms30315.1Tj = 125°CTj = 125°CTj = 125°C5041- 40 to + 150- 40 to + 125A²sA/µsAW°CAValueUnitA4tp = 10 msF = 120 Hztp = 20 µsJune 2003 - Ed: 51/8
元器件交易网4 SeriesELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)SymbolIGT (1)VGTVGDIH (2)ILdV/dt (2)Test ConditionsQuadrantT405VD = 12 V RL = 30 ΩVD = VDRM RL = 33 kΩTj = 125°CIT = 100 mAIG = 1.2 IGTI - IIIIIVD = 67 %VDRM gate open Tj = 125°C(dV/dt)c = 10 V/µs Tj = 125°CWithout snubber
Tj = 125°.(dI/dt)c (2)(dV/dt)c = 0.1 V/µs Tj = 125°CI - II - IIII - II - IIII - II - .101015201.80.9-5T4T410101.30.2152530402.72.0-355060400--2.5V/µsA/msT43535mAVVmAmAUnitSTATIC CHARACTERISTICSSymbolVTM (2)Vto (2)Rd (2)IDRMIRRMNote 1: minimum IGT is guaranted at 5% of IGT 2: for both polarities of A2 referenced to A1Test ConditionsITM = 5.5 A tp = 380 µsThreshold voltageDynamic resistanceVDRM = VRRMTj = 25°CTj = 125°CTj = 125°CTj = 25°CTj = 125°1.60.912051UnitVVmΩµAmATHERMAL RESISTANCESSymbolRth(j-c)Junction to case (AC)ParameterDPAKIPAKTO-220ABISOWATT220ABRth(j-a)Junction to ambientS = 0.5 cm²DPAKTO-220ABISOWATT220ABIPAKS = Copper surface under tabValue2.64.07060100Unit°C/W°C/W2/8T
元器件交易网4 SeriesPRODUCT SELECTORPart NumberT405-xxxBT405-xxxHT405-xxxTT405-xxxWT410-xxxBT410-xxxHT410-xxxTT410-xxxWT435-xxxBT435-xxxHT435-xxxTT435-xxxWXXXXXXXXXXXXVoltage (xxx)600 V700 VXXXXXXXXXXXX800 VXXXXXXXXXXXX5 mA5 mA5 mA5 mA10 mA10 mA10 mA10 mA35 mA35 mA35 mA35 mALogic levelLogic levelLogic levelLogic levelLogic levelLogic levelLogic levelLogic levelSnubberlessSnubberlessSnubberlessSnubberlessDPAKIPAKTO-220ABISOWATT220ABDPAKIPAKTO-220ABISOWATT220ABDPAKIPAKTO-220ABISOWATT220ABSensitivityTypePackageORDERING INFORMATION
T 4 05 - 600 B (-TR)TRIACSERIESCURRENT:4AVOLTAGE:600:600V700:700V800:800VSENSITIVITY:05:05mA10:10mA35:35mAPACKAGE:B:DPAKH:IPAKT:TO-220ABW:ISOWATT220ABPACKING MODE:Blank:Tube-TR:DPAKTape & ReelOTHER INFORMATIONPart NumberT4xx-yyyBT4xx-yyyB-TRT4xx-yyyHT4xx-yyyTT4xx-yyyWNote: xx = sensitivity, yyy = voltageMarkingT4xxyyyBT4xxyyyBT4xxyyyT4xxyyyTT4xxyyyWWeight0.3 g0.3 g0.4 g2.3 g2.1 gBasequantity752500755050PackingmodeTubeTape & reelTubeTubeTube3/8
元器件交易网4 SeriesFig. 1: Maximum power dissipation versus RMSon-state current (full cycle).P(W)65432100.00.51.0Fig. 2-1: RMS on-state current case versus tem-perature (full cycle).IT(RMS)(A)IT(RMS)(A)1.52.02.53.03.54.04.54.03.53.02.52.01.51.00.50.0TO-220AB/DPAK/IPAKISOWATT220ABTc(°C)5Fig. 2-2: RMS on-state current versus ambienttemperature (printed circuit FR4, copper thick-ness: 35µm),full (RMS)(A)DPAK(S=0.5cm²)Fig. 3: Relative variation of thermal impedanceversus pulse duration.K=[Zth/Rth]1E+0Rth(j-c)ISOWATT220ABTO-220AB/DPAK/IPAK2.01.81.61.41.21.00.80.60.40.20.0Rth(j-a)1E-1DPAK/IPAKTO-220AB/ISOWATT220ABTamb(°C)51E-21E-21E-1tp(s)1E+01E+11E+25E+2Fig. 4: Relative variation of gate trigger current,holding current and latching current versusjunction temperature (typical values).IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]2.52.01.5IH & ILIGTFig. 5: Surge peak on-state current versusnumber of (A)353025201510RepetitiveTc=110°CNon repetitiveTj initial=25°Ct=20msOne cycle1.00.5Tj(°C)50.0-40-201201400Number of cycles/8
元器件交易网4 SeriesFig. 6: Non-repetitive surge peak on-statecurrent for a sinusoidal pulse with widthtp<10ms, and corresponding value of I² (A),I²t (A²s)500100dI/dt limitation:50A/µsITSMFig. 7: On-state characteristics (maximumvalues).ITM(A)30.0Tj initial=25°C10.0Tj=Tj max.10tp (ms)10.010.101.001.0I²tVTM(V)10.00Tj max.:Vto= 0.90VRd= 120 mΩ0.10.00.51.01.52.02.53.03.54.04.55.0Fig. 8: Relative variation of critical rate ofdecrease of main current versus (dV/dt)c (typicalvalues).(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c2.42.22.01.81.61.41.21.00.80.60.40.20.00.1Fig. 9: Relative variation of critical rate ofdecrease of main current versus junctiontemperature.(dI/dt)c [Tj] / (dI/dt)c [Tj specified]654T435321Tj(°C)100.0T410T405(dV/dt)c (V/µs)1.010.125Fig. 10: DPAK thermal resistance junction toambient versus copper surface under tab (printedcircuit board FR4, copper thickness: 35µm).Rth(j-a) (°C/W)1403020100DPAKS(cm²)83236405/8
元器件交易网4 SeriesPACKAGE MECHANICAL DATADPAK (Plastic)2.202.400.901.100.030.230.640.905.205.400.450.600.480.606.006.206.406.604.404.609.3510.100.80 typ.0.601.000.2 typ.0°8°0.0860.0940.0350.0430.0010.0090.0250.0350.2040.2120.0170.0230.0180.0230.2360.2440.2510.2590.1730.1810.3680.3970.031 typ.0.0230.0390.007 typ.0°8°FOOTPRINT DIMENSIONS (in millimeters)DPAK (Plastic)6.76.7331.62.32.31.66/8
元器件交易网4 SeriesPACKAGE MECHANICAL DATAISOWATT220AB (Plastic)Max.4.404.602.502.702.502.750.400.700.751.001.151.701.151.704.955.202.402.7010.0010.4016.00 typ.28.6030.609.8010.6015.9016.409.009.303.003.200.1730.1810.0980.1060.0980.1080.0160.0280.0300.0390.0450.0670.0450.0670.1950.2050.0940.1060.3940.4090.630 typ.1.1251.2050.3860.4170.6260.6460.3540.3660.1180.126PACKAGE MECHANICAL DATATO-220AB (Plastic)Typ.0.1470.5510.4090.0340.0510.1810.027Max.0.625b2LFIAAa1a2Bb1b2Cc1c2eFII4Ll2l3M15.2015.900.598l4a1c2l3l2a2b1eMc12.402.720.0940.1072.402.700.0940.1066.206.600.2440.2593.753.850.1470.15115.8016.4016.800.6220.6460.6612.652.950.1040.1161.141.142.601.701.700.0440.0440.1020.0660.0667/8
元器件交易网4 SeriesPACKAGE MECHANICAL DATAIPAK (Plastic).0.0940.0430.0510.0350.2120.0330.0370.0230.0230.2440.2600.1810.6410.3700.0470.0310.03910°.2.41.11.30.95.40.85DHLL1B6B3BV1A1B5GCA3AA1A3BB2B3B5B6CC2DEGHLL1L2V12.20.90.70.645.20.30.450.4866.44.415.990.80.810°0.950.60.66.26.64.616.39.41.210.0170.0190.2360.2520.1730.6260.3540.031Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2003 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - ://8/8