2024年3月20日发(作者：九欣)
查询RQA0009SXAQS供应商
RQA0009SXAQS
Silicon N-Channel MOS FET
REJ03G1566-0100
Rev.1.00
Jul 04, 2007
Features
• High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(V
DS
= 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A
R
(Package Name : UPAK )
3
1
3
2
1
4
1. Gate
2. Source
3. Drain
4. Source
2, 4
Note: Marking is “SX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
16 V
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
V
GSS
±5 V
I
D
3.2 A
Pch
note
15 W
Tch 150 °C
Tstg –55 to +150 °C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Page 1 of 12
RQA0009SXAQS
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain current I
DSS
— — 15 µA V
DS
= 16 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±2 µA V
GS
= ±5 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
0.15 0.5 0.8 V V
DS
= 6 V, I
D
= 1 mA
Forward Transfer Admittance |yfs| — 3.2 — S V
DS
= 6 V, I
D
= 1.6 A
Input capacitance Ciss — 76 — pF V
GS
= 5 V, V
DS
= 0, f = 1 MHz
Output capacitance Coss — 40 — pF V
DS
= 6 V, V
GS
= 0, f = 1 MHz
Reverse transfer capacitance Crss — 3.5 — pF V
DG
= 6 V, V
GS
= 0, f = 1 MHz
Output Power Pout — 37.8 — dBm
V
DS
= 6 V, I
DQ
= 180 mA
f = 520 MHz,
— 6.0 — W
Pin = +25 dBm (316 mW)
Power Added Efficiency PAE — 65 — %
Output Power Pout — 35.2 — dBm
V
DS
= 4.8 V, I
DQ
= 300 mA
f = 465 MHz,
— 3.3 — W
Pin = +17 dBm (50 mW)
Power Added Efficiency PAE — 60 — %
Main Characteristics
Maximum Channel Power
Dissipation CurveTypical Output Characteristics
4
2.0 V
15
Pulse Test
1.75 V
C
h
a
n
n
e
l
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
P
c
h
(
W
)
20
D
r
a
i
n
C
u
r
r
e
n
t
I
D
(
A
)
3
1.5 V
2
1.25 V
1
10
5
V
GS
= 1.0 V
0
0
50100
150200
0
0246810
Case Temperature T
C
(°C)Drain to Source Voltage V
DS
(V)
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characterisitics
D
r
a
i
n
C
u
r
r
e
n
t
I
D
(
A
)
F
o
r
w
a
r
d
T
r
a
n
s
f
e
r
A
d
m
i
t
t
a
n
c
e
|
y
f
s
|
(
S
)
4
V
DS
= 6 V
Pulse Test
3
|y
fs
|
F
o
r
w
a
r
d
T
r
a
n
s
f
e
r
A
d
m
i
t
t
a
n
c
e
|
y
f
s
|
(
S
)
10.0
V
DS
= 6 V
Pulse Test
2
I
D
1.0
1
0
00.51.01.52.0
0.1
0.11.010.0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Page 2 of 12
2024年3月20日发(作者：九欣)
查询RQA0009SXAQS供应商
RQA0009SXAQS
Silicon N-Channel MOS FET
REJ03G1566-0100
Rev.1.00
Jul 04, 2007
Features
• High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(V
DS
= 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A
R
(Package Name : UPAK )
3
1
3
2
1
4
1. Gate
2. Source
3. Drain
4. Source
2, 4
Note: Marking is “SX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
16 V
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
V
GSS
±5 V
I
D
3.2 A
Pch
note
15 W
Tch 150 °C
Tstg –55 to +150 °C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Page 1 of 12
RQA0009SXAQS
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain current I
DSS
— — 15 µA V
DS
= 16 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±2 µA V
GS
= ±5 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
0.15 0.5 0.8 V V
DS
= 6 V, I
D
= 1 mA
Forward Transfer Admittance |yfs| — 3.2 — S V
DS
= 6 V, I
D
= 1.6 A
Input capacitance Ciss — 76 — pF V
GS
= 5 V, V
DS
= 0, f = 1 MHz
Output capacitance Coss — 40 — pF V
DS
= 6 V, V
GS
= 0, f = 1 MHz
Reverse transfer capacitance Crss — 3.5 — pF V
DG
= 6 V, V
GS
= 0, f = 1 MHz
Output Power Pout — 37.8 — dBm
V
DS
= 6 V, I
DQ
= 180 mA
f = 520 MHz,
— 6.0 — W
Pin = +25 dBm (316 mW)
Power Added Efficiency PAE — 65 — %
Output Power Pout — 35.2 — dBm
V
DS
= 4.8 V, I
DQ
= 300 mA
f = 465 MHz,
— 3.3 — W
Pin = +17 dBm (50 mW)
Power Added Efficiency PAE — 60 — %
Main Characteristics
Maximum Channel Power
Dissipation CurveTypical Output Characteristics
4
2.0 V
15
Pulse Test
1.75 V
C
h
a
n
n
e
l
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
P
c
h
(
W
)
20
D
r
a
i
n
C
u
r
r
e
n
t
I
D
(
A
)
3
1.5 V
2
1.25 V
1
10
5
V
GS
= 1.0 V
0
0
50100
150200
0
0246810
Case Temperature T
C
(°C)Drain to Source Voltage V
DS
(V)
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characterisitics
D
r
a
i
n
C
u
r
r
e
n
t
I
D
(
A
)
F
o
r
w
a
r
d
T
r
a
n
s
f
e
r
A
d
m
i
t
t
a
n
c
e
|
y
f
s
|
(
S
)
4
V
DS
= 6 V
Pulse Test
3
|y
fs
|
F
o
r
w
a
r
d
T
r
a
n
s
f
e
r
A
d
m
i
t
t
a
n
c
e
|
y
f
s
|
(
S
)
10.0
V
DS
= 6 V
Pulse Test
2
I
D
1.0
1
0
00.51.01.52.0
0.1
0.11.010.0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Page 2 of 12