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MBRS410LT3G;中文规格书,Datasheet资料

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2024年3月30日发(作者:湛迎蓉)

MBRS410LT3

Preferred Device

Surface Mount

Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

Typical applications are AC−DC and DC−DC converters, reverse

battery protection, and “ORing” of multiple supply voltages and any

other application where performance and size are critical.

Features

SCHOTTKY BARRIER

RECTIFIERS

4.0 AMPERES, 10 VOLTS

Ultra Low V

F

1st in the Market Place with a 10 V

R

Schottky Rectifier

Small Compact Surface Mountable Package with J−Bend Leads

Rectangular Package for Automated Handling

Highly Stable Oxide Passivated Junction

Very Low Forward Voltage Drop

Excellent Ability to Withstand Reverse Avalanche Energy Transients

Guard−Ring for Stress Protection

Pb−Free Package is Available

SMC

CASE 403

PLASTIC

MARKING DIAGRAM

Mechanical Characteristics

Case: Epoxy, Molded

Weight: 217 mg (Approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal

AYWW

B4L1G

G

Leads are Readily Solderable

Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

Polarity: Notch in Plastic Body Indicates Cathode Lead

ESD Ratings:Machine Model = C

Human Body Model = 3B

B4L1= Specific Device Code

A= Assembly Location

Y= Year

WW= Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

MBRS410LT3

MBRS410LT3G

Package

SMC

SMC

(Pb−Free)

Shipping

2500/Tape & Reel

2500/Tape & Reel

MAXIMUM RATINGS

Rating

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(@ T

L

= 110°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

Operating Junction Temperature

Symbol

V

RRM

V

RWM

V

R

I

O

I

FSM

Value

10

Unit

V

4.0

150

A

A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

T

J

−65 to +125°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

© Semiconductor Components Industries, LLC, 2005

1

August, 2005 − Rev. 2

Publication Order Number:

MBRS410LT3/D

/

MBRS410LT3

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction−to−Lead

Thermal Resistance,

Junction−to−Ambient

Symbol

R

q

JL

R

q

JA

Min Pad (Note 2)

12

109

1 Inch Pad

7.0

59

Unit

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 1)

(I

F

= 2.0 A)

(I

F

= 4.0 A)

(I

F

= 8.0 A)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, V

R

= 5.0 V)

(Rated dc Voltage, V

R

= 10 V)

Test: Pulse Width ≤ 300 ms, Duty Cycle ≤2%.

d with Minimum Recommended Pad Size, PC Board FR4.

100

I

F

,

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A

)

I

F

,

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A

)

100

I

R

V

F

T

J

= 25°C

0.31

0.33

0.35

T

J

= 25°C

2.0

5.0

T

J

= 100°C

0.200

0.225

0.250

T

J

= 100°C

100

200

mA

V

V

F

@ 125°C

10

100°C

10

V

F

@ 125°C

1

75°C

0.1

25°C

−40°C

1

100°C

75°C

25°C

00.10.20.30.40.5

0.1

00.10.20.30.40.5

V

F

, INSTANTANEOUS VOLTAGE (V)V

F

, INSTANTANEOUS VOLTAGE (V)

Figure 1. Typical Forward Voltage

Figure 2. Maximum Forward Voltage

1.00E+00

I

R

,

R

E

V

E

R

S

E

C

U

R

R

E

N

T

(

A

)

I

R

@ 125°C

100°C

75°C

C

,

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

10000

f = 1 Mhz

1.00E−01

1.00E−02

25°C

1.00E−03

25°C

02468

1.00E−04

10

1000

0246810

V

R

, REVERSE VOLTAGE (V)

V

R

, REVERSE VOLTAGE (V)

Figure 3. Typical Reverse CurrentFigure 4. Typical Capacitance

2

/

MBRS410LT3

9

8

I

F

,

A

V

E

R

A

G

E

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A

)

7

6

5

4

3

2

1

0

120125130

SQUARE WAVE

dc

P

F

O

,

A

V

E

R

A

G

E

P

O

W

E

R

D

I

S

S

I

P

A

T

I

O

N

(

W

)

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

SQUARE WAVE

dc

T

L

, LEAD TEMPERATURE (°C)I

O

, AVERAGE FORWARD CURRENT (A)

Figure 5. Current Derating (Junction−to−Lead)

R

(

t

)

,

T

R

A

N

S

I

E

N

T

T

H

E

R

M

A

L

R

E

S

I

S

T

A

N

C

E

(

°

C

/

W

)

Figure 6. Forward Power Dissipation

100

D = 0.5

0.2

0.1

10

0.05

0.02

0.01

1

SINGLE PULSE

0.1

0.000010.00010.0010.010.1

t, TIME (S)

1101001000

Figure 7. Thermal Response, Junction−to−Ambient (min pad)

R

(

t

)

,

T

R

A

N

S

I

E

N

T

T

H

E

R

M

A

L

R

E

S

I

S

T

A

N

C

E

(

°

C

/

W

)

100

D = 0.5

0.2

10

0.1

0.05

0.02

1

0.01

SINGLE PULSE

0.1

0.000010.00010.0010.010.1

t, TIME (S)

1101001000

Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)

3

/

MBRS410LT3

PACKAGE DIMENSIONS

SMC

PLASTIC PACKAGE

CASE 403−03

ISSUE E

H

E

E

NOTES:

IONING AND TOLERANCING PER ANSI Y14.5M, 1982.

LLING DIMENSION: INCH.

3.D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

4.403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.

DIM

A

A1

b

c

D

E

H

E

L

L1

MIN

1.90

0.05

2.92

0.15

5.59

6.60

7.75

0.76

MILLIMETERS

NOMMAX

2.132.41

0.100.15

3.003.07

0.230.30

5.846.10

6.867.11

7.948.13

1.021.27

0.51 REF

MIN

0.075

0.002

0.115

0.006

0.220

0.260

0.305

0.030

INCHES

NOM

0.084

0.004

0.118

0.009

0.230

0.270

0.313

0.040

0.020 REF

MAX

0.095

0.006

0.121

0.012

0.240

0.280

0.320

0.050

bD

A

LL1

c

A1

SOLDERING FOOTPRINT*

4.343

0.171

3.810

0.150

2.794

0.110

SCALE 4:1

mm

Ǔǒ

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:N. American Technical Support: 800−282−9855 Toll Free

Literature Distribution Center for ON SemiconductorUSA/Canada

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Phone: 81−3−5773−3850

Email: orderlit@

ON Semiconductor Website:

Order Literature: /litorder

For additional information, please contact your

local Sales Representative.

4

MBRS410LT3/D

/

分销商库存信息:

ONSEMI

MBRS410LT3G

2024年3月30日发(作者:湛迎蓉)

MBRS410LT3

Preferred Device

Surface Mount

Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

Typical applications are AC−DC and DC−DC converters, reverse

battery protection, and “ORing” of multiple supply voltages and any

other application where performance and size are critical.

Features

SCHOTTKY BARRIER

RECTIFIERS

4.0 AMPERES, 10 VOLTS

Ultra Low V

F

1st in the Market Place with a 10 V

R

Schottky Rectifier

Small Compact Surface Mountable Package with J−Bend Leads

Rectangular Package for Automated Handling

Highly Stable Oxide Passivated Junction

Very Low Forward Voltage Drop

Excellent Ability to Withstand Reverse Avalanche Energy Transients

Guard−Ring for Stress Protection

Pb−Free Package is Available

SMC

CASE 403

PLASTIC

MARKING DIAGRAM

Mechanical Characteristics

Case: Epoxy, Molded

Weight: 217 mg (Approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal

AYWW

B4L1G

G

Leads are Readily Solderable

Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

Polarity: Notch in Plastic Body Indicates Cathode Lead

ESD Ratings:Machine Model = C

Human Body Model = 3B

B4L1= Specific Device Code

A= Assembly Location

Y= Year

WW= Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

MBRS410LT3

MBRS410LT3G

Package

SMC

SMC

(Pb−Free)

Shipping

2500/Tape & Reel

2500/Tape & Reel

MAXIMUM RATINGS

Rating

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(@ T

L

= 110°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

Operating Junction Temperature

Symbol

V

RRM

V

RWM

V

R

I

O

I

FSM

Value

10

Unit

V

4.0

150

A

A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

T

J

−65 to +125°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

© Semiconductor Components Industries, LLC, 2005

1

August, 2005 − Rev. 2

Publication Order Number:

MBRS410LT3/D

/

MBRS410LT3

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction−to−Lead

Thermal Resistance,

Junction−to−Ambient

Symbol

R

q

JL

R

q

JA

Min Pad (Note 2)

12

109

1 Inch Pad

7.0

59

Unit

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 1)

(I

F

= 2.0 A)

(I

F

= 4.0 A)

(I

F

= 8.0 A)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, V

R

= 5.0 V)

(Rated dc Voltage, V

R

= 10 V)

Test: Pulse Width ≤ 300 ms, Duty Cycle ≤2%.

d with Minimum Recommended Pad Size, PC Board FR4.

100

I

F

,

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A

)

I

F

,

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A

)

100

I

R

V

F

T

J

= 25°C

0.31

0.33

0.35

T

J

= 25°C

2.0

5.0

T

J

= 100°C

0.200

0.225

0.250

T

J

= 100°C

100

200

mA

V

V

F

@ 125°C

10

100°C

10

V

F

@ 125°C

1

75°C

0.1

25°C

−40°C

1

100°C

75°C

25°C

00.10.20.30.40.5

0.1

00.10.20.30.40.5

V

F

, INSTANTANEOUS VOLTAGE (V)V

F

, INSTANTANEOUS VOLTAGE (V)

Figure 1. Typical Forward Voltage

Figure 2. Maximum Forward Voltage

1.00E+00

I

R

,

R

E

V

E

R

S

E

C

U

R

R

E

N

T

(

A

)

I

R

@ 125°C

100°C

75°C

C

,

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

10000

f = 1 Mhz

1.00E−01

1.00E−02

25°C

1.00E−03

25°C

02468

1.00E−04

10

1000

0246810

V

R

, REVERSE VOLTAGE (V)

V

R

, REVERSE VOLTAGE (V)

Figure 3. Typical Reverse CurrentFigure 4. Typical Capacitance

2

/

MBRS410LT3

9

8

I

F

,

A

V

E

R

A

G

E

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A

)

7

6

5

4

3

2

1

0

120125130

SQUARE WAVE

dc

P

F

O

,

A

V

E

R

A

G

E

P

O

W

E

R

D

I

S

S

I

P

A

T

I

O

N

(

W

)

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

SQUARE WAVE

dc

T

L

, LEAD TEMPERATURE (°C)I

O

, AVERAGE FORWARD CURRENT (A)

Figure 5. Current Derating (Junction−to−Lead)

R

(

t

)

,

T

R

A

N

S

I

E

N

T

T

H

E

R

M

A

L

R

E

S

I

S

T

A

N

C

E

(

°

C

/

W

)

Figure 6. Forward Power Dissipation

100

D = 0.5

0.2

0.1

10

0.05

0.02

0.01

1

SINGLE PULSE

0.1

0.000010.00010.0010.010.1

t, TIME (S)

1101001000

Figure 7. Thermal Response, Junction−to−Ambient (min pad)

R

(

t

)

,

T

R

A

N

S

I

E

N

T

T

H

E

R

M

A

L

R

E

S

I

S

T

A

N

C

E

(

°

C

/

W

)

100

D = 0.5

0.2

10

0.1

0.05

0.02

1

0.01

SINGLE PULSE

0.1

0.000010.00010.0010.010.1

t, TIME (S)

1101001000

Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)

3

/

MBRS410LT3

PACKAGE DIMENSIONS

SMC

PLASTIC PACKAGE

CASE 403−03

ISSUE E

H

E

E

NOTES:

IONING AND TOLERANCING PER ANSI Y14.5M, 1982.

LLING DIMENSION: INCH.

3.D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

4.403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.

DIM

A

A1

b

c

D

E

H

E

L

L1

MIN

1.90

0.05

2.92

0.15

5.59

6.60

7.75

0.76

MILLIMETERS

NOMMAX

2.132.41

0.100.15

3.003.07

0.230.30

5.846.10

6.867.11

7.948.13

1.021.27

0.51 REF

MIN

0.075

0.002

0.115

0.006

0.220

0.260

0.305

0.030

INCHES

NOM

0.084

0.004

0.118

0.009

0.230

0.270

0.313

0.040

0.020 REF

MAX

0.095

0.006

0.121

0.012

0.240

0.280

0.320

0.050

bD

A

LL1

c

A1

SOLDERING FOOTPRINT*

4.343

0.171

3.810

0.150

2.794

0.110

SCALE 4:1

mm

Ǔǒ

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:N. American Technical Support: 800−282−9855 Toll Free

Literature Distribution Center for ON SemiconductorUSA/Canada

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Phone: 81−3−5773−3850

Email: orderlit@

ON Semiconductor Website:

Order Literature: /litorder

For additional information, please contact your

local Sales Representative.

4

MBRS410LT3/D

/

分销商库存信息:

ONSEMI

MBRS410LT3G

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