2024年3月30日发(作者：尉迟丝娜)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
==
TO-92S Plastic-Encapsulate Transistors
=
=
2SC2785
TRANSISTOR (NPN)
=
=
=
FEATURES
=
z
High voltage
=
z
Excellent h
FE
Linearity
=
Complementary to 2SA1175 PNP transistor
z
=
=
=
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
60 V
50
5
0.1
0.25
150
-55-150
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Test conditions MIN TYP MAXUNIT
I
C
=100μA, I
E
0 60 V
I
C
=1mA, I
B
0 50 V
I
E
=100μA, I
C
0 5 V
V
CB
=60V, I
E
0 0.1 μA
V
EB
=5V, I
C
0 0.1 μA
V
CE
=6V, I
C
1mA 110 600
V
CE
=6V, I
C
0.1mA 50
I
C
=100mA, I
B
10mA 0.3 V
I
C
=100mA, I
B
10mA 1 V
V
CE
=6V, I
C
1mA 0.65 V
V
CE
=6V, I
C
10mA 150 MHz
V
CB
=6V, I
E
0,f1MHz 4 pF
15 dB
NF V
CE
=6V, I
c
=0.1mA,f=1KHZ, R
g
=2KΩ
CLASSIFICATION OF h
FE(1)
Rank
Range
RF JF HF FF EF KF
110-180 135-220 170-270 200-320 250-400 300-600
A,Jun,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
θ
Dimensions In Millimeters
.
1.4201.620
0.6600.860
0.3500.480
0.4000.550
0.3600.510
3.9004.100
2.9703.270
3.0503.250
1.270 TYP.
2.4402.640
15.10015.500
45° TYP.
Dimensions In Inches
.
0.0560.064
0.0260.034
0.0140.019
0.0160.022
0.0140.020
0.1540.161
0.1170.129
0.1200.128
0.050 TYP.
0.0960.104
0.5940.610
45° TYP.
2024年3月30日发(作者：尉迟丝娜)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
==
TO-92S Plastic-Encapsulate Transistors
=
=
2SC2785
TRANSISTOR (NPN)
=
=
=
FEATURES
=
z
High voltage
=
z
Excellent h
FE
Linearity
=
Complementary to 2SA1175 PNP transistor
z
=
=
=
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
60 V
50
5
0.1
0.25
150
-55-150
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Test conditions MIN TYP MAXUNIT
I
C
=100μA, I
E
0 60 V
I
C
=1mA, I
B
0 50 V
I
E
=100μA, I
C
0 5 V
V
CB
=60V, I
E
0 0.1 μA
V
EB
=5V, I
C
0 0.1 μA
V
CE
=6V, I
C
1mA 110 600
V
CE
=6V, I
C
0.1mA 50
I
C
=100mA, I
B
10mA 0.3 V
I
C
=100mA, I
B
10mA 1 V
V
CE
=6V, I
C
1mA 0.65 V
V
CE
=6V, I
C
10mA 150 MHz
V
CB
=6V, I
E
0,f1MHz 4 pF
15 dB
NF V
CE
=6V, I
c
=0.1mA,f=1KHZ, R
g
=2KΩ
CLASSIFICATION OF h
FE(1)
Rank
Range
RF JF HF FF EF KF
110-180 135-220 170-270 200-320 250-400 300-600
A,Jun,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
θ
Dimensions In Millimeters
.
1.4201.620
0.6600.860
0.3500.480
0.4000.550
0.3600.510
3.9004.100
2.9703.270
3.0503.250
1.270 TYP.
2.4402.640
15.10015.500
45° TYP.
Dimensions In Inches
.
0.0560.064
0.0260.034
0.0140.019
0.0160.022
0.0140.020
0.1540.161
0.1170.129
0.1200.128
0.050 TYP.
0.0960.104
0.5940.610
45° TYP.