2024年4月3日发(作者：淳于觅荷)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
1.
EMITTER
2.
COLLECTOR
3.
BASE
==
2SA1013
TRANSISTOR (PNP)
=
FEATURE
y High Voltage:V
CEO
=-160V
y Large Continuous Collector Current Capability
y Complementary to 2SC2383
=
=
=
=
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
-160 V
-160 V
-6
-1
0.9
150
-55 to +150
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output capacitance
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
Test conditions Min Max Unit
I
C
=- 100μA , I
E
0 -160 V
I
C
= -1mA , I
B
0 -160 V
I
E
= -10μA, I
C
0 -6 V
V
CB
=-150 V , I
E
0 -1 μA
V
EB
=-6V, I
C
0 -1 μA
V
CE
=-5 V, I
C
=- 200mA
I
C
= -500m A, I
B
= -50mA
I
C
= -5mA, V
CE
=- 5V
V
CE
= -5 V, I
C
= -200mA
60 320
-0.45
-1.5
-0.75
V
V
f
T
C
ob
15 MHz
V
CB
=-10V, I
E
0,f1MHz 35 pF
CLASSIFICATION OF h
FE
Rank
Range
R O Y
60-120 100-200 160-320
A,Jun,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
4.7005.100
1.7302.030
0.4000.600
0.9001.100
0.4000.500
5.8006.200
4.000
8.4008.800
1.500 TYP.
2.9003.100
13.80014.200
1.600
0.0000.380
Dimensions In Inches
.
0.1850.201
0.0680.080
0.0160.024
0.0350.043
0.0160.020
0.2280.244
0.157
0.3310.346
0.059 TYP.
0.1140.122
0.5430.559
0.063
0.0000.015
2024年4月3日发(作者：淳于觅荷)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
1.
EMITTER
2.
COLLECTOR
3.
BASE
==
2SA1013
TRANSISTOR (PNP)
=
FEATURE
y High Voltage:V
CEO
=-160V
y Large Continuous Collector Current Capability
y Complementary to 2SC2383
=
=
=
=
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
-160 V
-160 V
-6
-1
0.9
150
-55 to +150
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output capacitance
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
Test conditions Min Max Unit
I
C
=- 100μA , I
E
0 -160 V
I
C
= -1mA , I
B
0 -160 V
I
E
= -10μA, I
C
0 -6 V
V
CB
=-150 V , I
E
0 -1 μA
V
EB
=-6V, I
C
0 -1 μA
V
CE
=-5 V, I
C
=- 200mA
I
C
= -500m A, I
B
= -50mA
I
C
= -5mA, V
CE
=- 5V
V
CE
= -5 V, I
C
= -200mA
60 320
-0.45
-1.5
-0.75
V
V
f
T
C
ob
15 MHz
V
CB
=-10V, I
E
0,f1MHz 35 pF
CLASSIFICATION OF h
FE
Rank
Range
R O Y
60-120 100-200 160-320
A,Jun,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
4.7005.100
1.7302.030
0.4000.600
0.9001.100
0.4000.500
5.8006.200
4.000
8.4008.800
1.500 TYP.
2.9003.100
13.80014.200
1.600
0.0000.380
Dimensions In Inches
.
0.1850.201
0.0680.080
0.0160.024
0.0350.043
0.0160.020
0.2280.244
0.157
0.3310.346
0.059 TYP.
0.1140.122
0.5430.559
0.063
0.0000.015