2024年4月10日发(作者：风君)
PNP Transistors
FMMT720
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit:mm
■ Features
● Switching transistor
● Extremely low saturation voltage
● Complementary NPN type: FMMT619
+
0
.
1
2
.
4
-
0
.
1
+
0
.
1
1
.
3
-
0
.
1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0
.
5
5
0
.
4
3
+0.05
0.1
-0.01
0
.
9
7
+
0
.
1
-
0
.
1
r
+
0
.
1
0
.
3
8
-
0
.
1
0
-
0
.
1
tor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous (Note.1)
Collector Current - Pulse
Base Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
R
ΘJA
T
J
T
stg
Rating
-40
-40
-5
-1.5
-4
-0.5
350
357
150
-55 to 150
mW
℃/W
℃
A
V
Unit
Note.1: Measured under pulse conditions . Pulse width =300μs. Duty cycle≤2%.
PNP Transistors
FMMT720
■ Typical Characterisitics
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CES
I
EBO
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -10 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -35 V , I
E
=0
V
CE
= -35 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
V
CE(sat)
I
C
=-1 A, I
B
=-50mA
I
C
=-1.5 A, I
B
=-100mA
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
V
BE(sat)
I
C
= -1.5 A, I
B
=- 75mA
V
BE(on)
V
CE
= -2V, I
C
= -1.5A
h
FE(1)
h
FE(2)
DC current gain (Note.1)
h
FE(3)
h
FE(4)
h
FE(5)
Turn-on Time
Turn-off Time
Collector output capacitance
Transition frequency
Note.1: Pulse width =300μs. Duty cycle≤2%.
t
on
t
off
C
ob
f
T
V
CE
= -2V, I
C
= -10mA
V
CE
=- 2V, I
C
= -100mA
V
CE
=- 2V, I
C
= -1 A
V
CE
=- 2V, I
C
= -1.5 A
V
CE
=- 2V, I
C
= -3 A
V
CC
=-15V, I
C
=-0.75A, I
B1
=
I
B2
=-15mA
V
CB
= -10V,f=1MHz
V
CE
= -10V, I
C
= -50mA,f=100MHz150
Min
-40
-40
-5
TypMaxUnit
V
-100
-100
-100
-45
-220
-330
-1
-1
200
200
150
100
20
40
435
25
ns
pF
MHz
600
V
mV
nA
■ Classification of h
fe(2)
Type
Range
Marking
FMMT720-L
200-350
720
FMMT720-H
300-600
720.
2024年4月10日发(作者：风君)
PNP Transistors
FMMT720
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit:mm
■ Features
● Switching transistor
● Extremely low saturation voltage
● Complementary NPN type: FMMT619
+
0
.
1
2
.
4
-
0
.
1
+
0
.
1
1
.
3
-
0
.
1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0
.
5
5
0
.
4
3
+0.05
0.1
-0.01
0
.
9
7
+
0
.
1
-
0
.
1
r
+
0
.
1
0
.
3
8
-
0
.
1
0
-
0
.
1
tor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous (Note.1)
Collector Current - Pulse
Base Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
R
ΘJA
T
J
T
stg
Rating
-40
-40
-5
-1.5
-4
-0.5
350
357
150
-55 to 150
mW
℃/W
℃
A
V
Unit
Note.1: Measured under pulse conditions . Pulse width =300μs. Duty cycle≤2%.
PNP Transistors
FMMT720
■ Typical Characterisitics
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CES
I
EBO
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -10 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -35 V , I
E
=0
V
CE
= -35 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
V
CE(sat)
I
C
=-1 A, I
B
=-50mA
I
C
=-1.5 A, I
B
=-100mA
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
V
BE(sat)
I
C
= -1.5 A, I
B
=- 75mA
V
BE(on)
V
CE
= -2V, I
C
= -1.5A
h
FE(1)
h
FE(2)
DC current gain (Note.1)
h
FE(3)
h
FE(4)
h
FE(5)
Turn-on Time
Turn-off Time
Collector output capacitance
Transition frequency
Note.1: Pulse width =300μs. Duty cycle≤2%.
t
on
t
off
C
ob
f
T
V
CE
= -2V, I
C
= -10mA
V
CE
=- 2V, I
C
= -100mA
V
CE
=- 2V, I
C
= -1 A
V
CE
=- 2V, I
C
= -1.5 A
V
CE
=- 2V, I
C
= -3 A
V
CC
=-15V, I
C
=-0.75A, I
B1
=
I
B2
=-15mA
V
CB
= -10V,f=1MHz
V
CE
= -10V, I
C
= -50mA,f=100MHz150
Min
-40
-40
-5
TypMaxUnit
V
-100
-100
-100
-45
-220
-330
-1
-1
200
200
150
100
20
40
435
25
ns
pF
MHz
600
V
mV
nA
■ Classification of h
fe(2)
Type
Range
Marking
FMMT720-L
200-350
720
FMMT720-H
300-600
720.