2024年4月15日发(作者：完鹏赋)
FLM5964-45F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=47.0dBm(Typ.)
・High Gain: G1dB=8.5dB(Typ.)
・High PAE: ηadd=39%(Typ.)
・Broad Band: 5.9~6.4GHz
・Impedance MatchedZin/Zout= 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM5964-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ωsystem.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
115
-65 to +175
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
V
DS
I
GF
I
GR
Condition
RG=10
Ω
RG=10
Ω
Limit
≤
10
≤
108
≥
-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE : IK
ESD
Symbol
.
I
DSS
- 24
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
g
m
- 16
VDS=5V, IDS=480mA
-0.5-1.5V
p
IGS=-480uA
V
GSO
-5.0 -
46.047.0P
1dB
VDS=10V
G
1dB
7.58.5
f=5.9 - 6.4 GHz
- 11I
dsr
IDS(DC)=8.0A(typ.)
- 39
Zs=ZL=50
Ω
η
add
--
∆
G
f=6.4 GHz
IM
3
-37-40
∆
f=10MHz, 2-tone Test
Pout=35.5dBm(S.C.L.)
R
th
Channel to Case - 1.1
10V x IDS(DC) X R
th
∆
T
ch
--
2000V
~
Condition
Limit
Max.
-
-
-3.0
-
-
-
13
-
1.2
-
1.3
100
Unit
A
S
V
V
dBm
dB
A
%
dB
dBc
o
C/W
o
C
G.C.P.:Gain Compression Point
Class III
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
Ω
)
Edition 1.3
September 2004
1
FLM5964-45F
C-Band Internally Matched FET
Power Derating Curve
140
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
Output Power & P.A.E. vs. Input Power
VDS=10V, IDS(DC), f=6.15GHz
50
48
O
u
t
p
u
t
P
o
w
e
r
(
d
B
m
)
80
70
60
Pout
120
100
80
60
40
20
0
Case Temperature (
℃
)
46
44
42
40
38
36
34
2426283032343638
Input Power (dBm)
4042
P.A.E.
50
40
30
20
10
0
Output Power vs. Frequency
VDS=10V, IDS(DC)=8A
50
48
O
u
t
p
u
t
P
o
w
e
r
(
d
B
m
)
IMD vs. Output Power
Pin=41dBm
P1dB
Pin=34dBm
VDS=10V, IDS(DC)=8A
f1=6.40GHz, f2=6.41GHz
46
44
42
40
38
36
34
5.75.85.966.16.26.3
Frequency (GHz)
6.4
-25
-30
Pin=30dBm
I
M
D
(
d
B
c
)
-35
-40
-45
-50
-55
-60
IM3
IM5
Pin=26dBm
6.56.6
3637383940
Output Power (S.C.L.) (dBm)
S.C.L. :Single Carrier Level
2
P
o
w
e
r
A
d
d
e
d
E
f
f
i
c
i
e
n
c
y
(
%
)
FLM5964-45F
C-Band Internally Matched FET
■S-PARAMETER
+50j
+25j
5.
+90°
+100j
7.4
+10j
6.8
6.85.9
6.15
7.4
5.9
+250j
10.5
6.4
6.8
6.4
6.15
0
10
Ω
25
∞
±180°
3
6.15
6.15
5.5
6.4
5.9
2
Scale for |S
21
|
10
6.8
7.4
5.5
7.4
0°
-10j
-250j
6.4
S
c
a
l
e
f
o
r
|
S
1
2
|
5.9
5.5
-25j
-50j
-100j
S11
S22
0.2
-90°
S12
S21
VDS=10V, IDS(DC)=8.0A
Freq.
[GHz]
5.50
5.60
5.70
5.80
5.90
6.00
6.10
6.20
6.30
6.40
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
S11
MAG
0.69
0.68
0.66
0.64
0.62
0.59
0.56
0.52
0.48
0.46
0.47
0.51
0.57
0.64
0.71
0.77
0.82
0.85
0.88
0.89
ANG
100.73
83.94
66.62
49.49
31.08
12.46
-7.81
-29.71
-55.12
-84.53
-115.98
-147.35
-175.07
161.88
142.58
126.73
114.00
102.39
92.83
84.05
MAG
2.71
2.79
2.87
2.93
3.00
3.05
3.09
3.12
3.13
3.12
3.03
2.88
2.67
2.43
2.16
1.91
1.67
1.45
1.27
1.09
S21
ANG
-65.86
-82.12
-98.96
-116.10
-133.45
-150.81
-168.95
173.00
153.96
134.25
114.07
93.41
73.16
53.61
35.09
16.95
1.25
-14.52
-29.03
-42.51
MAG
0.04
0.05
0.05
0.05
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.06
0.05
0.05
0.04
0.04
0.03
0.03
S12
ANG
-98.76
-119.62
-138.82
-156.63
-172.99
168.51
151.81
134.62
116.09
96.67
76.89
55.03
34.26
14.80
-2.80
-19.52
-35.33
-49.84
-66.26
-77.65
MAG
0.24
0.20
0.18
0.17
0.19
0.20
0.21
0.21
0.19
0.15
0.09
0.02
0.10
0.20
0.29
0.38
0.46
0.53
0.59
0.64
S22
ANG
-178.84
156.65
127.57
98.72
74.14
53.42
36.86
22.64
9.90
-2.96
-11.43
41.26
106.30
99.38
88.73
77.36
66.53
56.00
46.08
37.22
3
FLM5964-45F
C-Band Internally Matched FET
■Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
FLM5964-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 ZankerRd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
Eudyna Devices Europe Ltd.
Network House
NorreysDrive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(KokuboIndustrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
TEL +81-45-853-8156
FAX +81-45-853-8170
5
2024年4月15日发(作者：完鹏赋)
FLM5964-45F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=47.0dBm(Typ.)
・High Gain: G1dB=8.5dB(Typ.)
・High PAE: ηadd=39%(Typ.)
・Broad Band: 5.9~6.4GHz
・Impedance MatchedZin/Zout= 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM5964-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ωsystem.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
115
-65 to +175
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
V
DS
I
GF
I
GR
Condition
RG=10
Ω
RG=10
Ω
Limit
≤
10
≤
108
≥
-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE : IK
ESD
Symbol
.
I
DSS
- 24
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
g
m
- 16
VDS=5V, IDS=480mA
-0.5-1.5V
p
IGS=-480uA
V
GSO
-5.0 -
46.047.0P
1dB
VDS=10V
G
1dB
7.58.5
f=5.9 - 6.4 GHz
- 11I
dsr
IDS(DC)=8.0A(typ.)
- 39
Zs=ZL=50
Ω
η
add
--
∆
G
f=6.4 GHz
IM
3
-37-40
∆
f=10MHz, 2-tone Test
Pout=35.5dBm(S.C.L.)
R
th
Channel to Case - 1.1
10V x IDS(DC) X R
th
∆
T
ch
--
2000V
~
Condition
Limit
Max.
-
-
-3.0
-
-
-
13
-
1.2
-
1.3
100
Unit
A
S
V
V
dBm
dB
A
%
dB
dBc
o
C/W
o
C
G.C.P.:Gain Compression Point
Class III
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
Ω
)
Edition 1.3
September 2004
1
FLM5964-45F
C-Band Internally Matched FET
Power Derating Curve
140
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
Output Power & P.A.E. vs. Input Power
VDS=10V, IDS(DC), f=6.15GHz
50
48
O
u
t
p
u
t
P
o
w
e
r
(
d
B
m
)
80
70
60
Pout
120
100
80
60
40
20
0
Case Temperature (
℃
)
46
44
42
40
38
36
34
2426283032343638
Input Power (dBm)
4042
P.A.E.
50
40
30
20
10
0
Output Power vs. Frequency
VDS=10V, IDS(DC)=8A
50
48
O
u
t
p
u
t
P
o
w
e
r
(
d
B
m
)
IMD vs. Output Power
Pin=41dBm
P1dB
Pin=34dBm
VDS=10V, IDS(DC)=8A
f1=6.40GHz, f2=6.41GHz
46
44
42
40
38
36
34
5.75.85.966.16.26.3
Frequency (GHz)
6.4
-25
-30
Pin=30dBm
I
M
D
(
d
B
c
)
-35
-40
-45
-50
-55
-60
IM3
IM5
Pin=26dBm
6.56.6
3637383940
Output Power (S.C.L.) (dBm)
S.C.L. :Single Carrier Level
2
P
o
w
e
r
A
d
d
e
d
E
f
f
i
c
i
e
n
c
y
(
%
)
FLM5964-45F
C-Band Internally Matched FET
■S-PARAMETER
+50j
+25j
5.
+90°
+100j
7.4
+10j
6.8
6.85.9
6.15
7.4
5.9
+250j
10.5
6.4
6.8
6.4
6.15
0
10
Ω
25
∞
±180°
3
6.15
6.15
5.5
6.4
5.9
2
Scale for |S
21
|
10
6.8
7.4
5.5
7.4
0°
-10j
-250j
6.4
S
c
a
l
e
f
o
r
|
S
1
2
|
5.9
5.5
-25j
-50j
-100j
S11
S22
0.2
-90°
S12
S21
VDS=10V, IDS(DC)=8.0A
Freq.
[GHz]
5.50
5.60
5.70
5.80
5.90
6.00
6.10
6.20
6.30
6.40
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
S11
MAG
0.69
0.68
0.66
0.64
0.62
0.59
0.56
0.52
0.48
0.46
0.47
0.51
0.57
0.64
0.71
0.77
0.82
0.85
0.88
0.89
ANG
100.73
83.94
66.62
49.49
31.08
12.46
-7.81
-29.71
-55.12
-84.53
-115.98
-147.35
-175.07
161.88
142.58
126.73
114.00
102.39
92.83
84.05
MAG
2.71
2.79
2.87
2.93
3.00
3.05
3.09
3.12
3.13
3.12
3.03
2.88
2.67
2.43
2.16
1.91
1.67
1.45
1.27
1.09
S21
ANG
-65.86
-82.12
-98.96
-116.10
-133.45
-150.81
-168.95
173.00
153.96
134.25
114.07
93.41
73.16
53.61
35.09
16.95
1.25
-14.52
-29.03
-42.51
MAG
0.04
0.05
0.05
0.05
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.06
0.05
0.05
0.04
0.04
0.03
0.03
S12
ANG
-98.76
-119.62
-138.82
-156.63
-172.99
168.51
151.81
134.62
116.09
96.67
76.89
55.03
34.26
14.80
-2.80
-19.52
-35.33
-49.84
-66.26
-77.65
MAG
0.24
0.20
0.18
0.17
0.19
0.20
0.21
0.21
0.19
0.15
0.09
0.02
0.10
0.20
0.29
0.38
0.46
0.53
0.59
0.64
S22
ANG
-178.84
156.65
127.57
98.72
74.14
53.42
36.86
22.64
9.90
-2.96
-11.43
41.26
106.30
99.38
88.73
77.36
66.53
56.00
46.08
37.22
3
FLM5964-45F
C-Band Internally Matched FET
■Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
FLM5964-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 ZankerRd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
Eudyna Devices Europe Ltd.
Network House
NorreysDrive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(KokuboIndustrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
TEL +81-45-853-8156
FAX +81-45-853-8170
5