2024年5月13日发(作者：孙平文)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
=
SOT-89-3L Plastic-Encapsulate Transistors
=
=
=
=
=
TRANSISTOR (NPN)
=
=
=
=
FEATURES
=
SOT-89-3L
A42
1. BASE
2. COLLECTOR
3. EMITTER
z Low Collector-Emitter Saturation Voltage
z High Breakdown Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
Collector-Base Voltage 310 V
V
CBO
Collector-Emitter Voltage 305 V
V
CEO
Emitter-Base Voltage 5 V
V
EBO
Collector Current -Continuous 200 mA
I
C
Collector Current -Pulsed 500mA
I
CM
Collector Power Dissipation 500 mW
P
C
Thermal Resistance from Junction to Ambient 250
R
θJA
℃/W
Junction Temperature 150
T
J
℃
T
stg
S
torage Temperature -55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Test conditions Min Typ Max Unit
I
C
=100µA,I
E
0 310 V
I
C
=1mA,I
B
0 305 V
V
(BR)EBO
I
E
=100µA,I
C
0 5 V
V
CB
=200V,I
E
0 0.25 µA
V
CE
=200V,I
B
0 0.25 µA
V
CE
=300V,I
B
0 5 µA
V
EB
=5V,I
C
0 0.1 µA
V
CE
=10V, I
C
10mA 100 300
V
CE
=10V, I
C
30mA 75
V
CE
=10V, I
C
1mA 60
I
C
=20mA,I
B
=2mA
0.2 V
V
CE
=20V,I
C
=10mA, f=30MHz 50
I
C
=20mA,I
B
2mA 0.9 V
MHz
D,Apr,2013
Typical Characteristics
A42
I
C
——
V
18
CE
90uA
COMMON
16
80uA
EMITTER
T
a
=25
℃
)
A
m
14
70uA
(
C
I
60uA
12
T
N
50uA
E
10
R
R
U
8
40uA
C
R
30uA
O
T
6
C
E
20uA
L
L
4
O
C
I
B
=10uA
2
0
6182022
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CEsat
——
I
C
500
N
O
I
T
A
R
)
U
V
T
m
A
(
S
t
T
R
a
s
a
=100
℃
E
E
C
100
T
V
T
I
M
E
E
-
G
T
R
A
a
=25
℃
O
T
T
L
C
O
E
V
L
L
O
C
β=10
10
0.1110100
COLLECTOR CURREMT I
C
(mA)
I
C
——
V
100
BE
)
A
m
(
C
I
10
T
℃
N
0
0
℃
E
1
5
R
=
2
R
a
T
=
a
U
T
C
R
O
T
C
1
E
L
L
O
C
COMMON EMITTER
V
CE
=10V
0.1
00
BASE-EMMITER VOLTAGE V
BE
(mV)
C
100
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
C
T
ib
a
=25
℃
)
F
p
(
C
E
C
N
10
A
T
I
C
A
P
A
C
C
ob
1
0.1110
20
REVERSE VOLTAGE V (V)
h
1000
FE
——
I
C
E
F
h
T
a
=100
℃
N
I
A
G
T
N
T
a
=25
℃
E
R
100
R
U
C
C
D
COMMON EMITTER
V
CE
=10V
10
0.1110100
200
COLLECTOR CURRENT I
C
(mA)
V
900
BEsat
——
I
C
N
O
I
)
T
V
A
R
m
(
T=25
℃
U
a
T
t
A
a
s
E
S
B
600
R
V
E
T
E
T
I
G
M
A
E
T
-
L
E
O
T
S
V
a
=100
℃
A
B
β=10
300
0.1110100
COLLECTOR CURREMT I
C
(mA)
f
300
T
——
I
C
)
z
H
M
(
T
f
100
Y
C
N
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
COMMON EMITTER
T
V
CE
=20V
T
a
=25
℃
10
0.1110100
COLLECTOR CURRENT I
C
(mA)
P
600
C
—— T
a
N
O
I
T
A
500
P
I
S
S
I
D
)
400
R
W
E
W
m
(
O
P
C
300
R
P
O
T
C
E
L
200
L
O
C
100
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
D,Apr,2013
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
.
1.4001.600
0.3200.520
0.4000.580
0.3500.440
4.4004.600
1.550 REF.
2.3002.600
3.9404.250
1.500 TYP.
3.000 TYP.
0.9001.200
Dimensions In Inches
.
0.0550.063
0.0130.020
0.0160.023
0.0140.017
0.1730.181
0.061 REF.
0.0910.102
0.1550.167
0.060 TYP.
0.118 TYP.
0.0350.047
The bottom gasket
The file folder
Label on the Reel
Plastic bag
1000×1 PCS
The top gasket
Seal the box
with the tape
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Label on the Inner Box
Inner Box:
210 mm× 208 mm×２０３ mm
Label on the Outer Box
Outer Box:
440 mm× 440 mm× 230 mm
2024年5月13日发(作者：孙平文)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
=
SOT-89-3L Plastic-Encapsulate Transistors
=
=
=
=
=
TRANSISTOR (NPN)
=
=
=
=
FEATURES
=
SOT-89-3L
A42
1. BASE
2. COLLECTOR
3. EMITTER
z Low Collector-Emitter Saturation Voltage
z High Breakdown Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
Collector-Base Voltage 310 V
V
CBO
Collector-Emitter Voltage 305 V
V
CEO
Emitter-Base Voltage 5 V
V
EBO
Collector Current -Continuous 200 mA
I
C
Collector Current -Pulsed 500mA
I
CM
Collector Power Dissipation 500 mW
P
C
Thermal Resistance from Junction to Ambient 250
R
θJA
℃/W
Junction Temperature 150
T
J
℃
T
stg
S
torage Temperature -55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Test conditions Min Typ Max Unit
I
C
=100µA,I
E
0 310 V
I
C
=1mA,I
B
0 305 V
V
(BR)EBO
I
E
=100µA,I
C
0 5 V
V
CB
=200V,I
E
0 0.25 µA
V
CE
=200V,I
B
0 0.25 µA
V
CE
=300V,I
B
0 5 µA
V
EB
=5V,I
C
0 0.1 µA
V
CE
=10V, I
C
10mA 100 300
V
CE
=10V, I
C
30mA 75
V
CE
=10V, I
C
1mA 60
I
C
=20mA,I
B
=2mA
0.2 V
V
CE
=20V,I
C
=10mA, f=30MHz 50
I
C
=20mA,I
B
2mA 0.9 V
MHz
D,Apr,2013
Typical Characteristics
A42
I
C
——
V
18
CE
90uA
COMMON
16
80uA
EMITTER
T
a
=25
℃
)
A
m
14
70uA
(
C
I
60uA
12
T
N
50uA
E
10
R
R
U
8
40uA
C
R
30uA
O
T
6
C
E
20uA
L
L
4
O
C
I
B
=10uA
2
0
6182022
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CEsat
——
I
C
500
N
O
I
T
A
R
)
U
V
T
m
A
(
S
t
T
R
a
s
a
=100
℃
E
E
C
100
T
V
T
I
M
E
E
-
G
T
R
A
a
=25
℃
O
T
T
L
C
O
E
V
L
L
O
C
β=10
10
0.1110100
COLLECTOR CURREMT I
C
(mA)
I
C
——
V
100
BE
)
A
m
(
C
I
10
T
℃
N
0
0
℃
E
1
5
R
=
2
R
a
T
=
a
U
T
C
R
O
T
C
1
E
L
L
O
C
COMMON EMITTER
V
CE
=10V
0.1
00
BASE-EMMITER VOLTAGE V
BE
(mV)
C
100
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
C
T
ib
a
=25
℃
)
F
p
(
C
E
C
N
10
A
T
I
C
A
P
A
C
C
ob
1
0.1110
20
REVERSE VOLTAGE V (V)
h
1000
FE
——
I
C
E
F
h
T
a
=100
℃
N
I
A
G
T
N
T
a
=25
℃
E
R
100
R
U
C
C
D
COMMON EMITTER
V
CE
=10V
10
0.1110100
200
COLLECTOR CURRENT I
C
(mA)
V
900
BEsat
——
I
C
N
O
I
)
T
V
A
R
m
(
T=25
℃
U
a
T
t
A
a
s
E
S
B
600
R
V
E
T
E
T
I
G
M
A
E
T
-
L
E
O
T
S
V
a
=100
℃
A
B
β=10
300
0.1110100
COLLECTOR CURREMT I
C
(mA)
f
300
T
——
I
C
)
z
H
M
(
T
f
100
Y
C
N
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
COMMON EMITTER
T
V
CE
=20V
T
a
=25
℃
10
0.1110100
COLLECTOR CURRENT I
C
(mA)
P
600
C
—— T
a
N
O
I
T
A
500
P
I
S
S
I
D
)
400
R
W
E
W
m
(
O
P
C
300
R
P
O
T
C
E
L
200
L
O
C
100
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
D,Apr,2013
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
.
1.4001.600
0.3200.520
0.4000.580
0.3500.440
4.4004.600
1.550 REF.
2.3002.600
3.9404.250
1.500 TYP.
3.000 TYP.
0.9001.200
Dimensions In Inches
.
0.0550.063
0.0130.020
0.0160.023
0.0140.017
0.1730.181
0.061 REF.
0.0910.102
0.1550.167
0.060 TYP.
0.118 TYP.
0.0350.047
The bottom gasket
The file folder
Label on the Reel
Plastic bag
1000×1 PCS
The top gasket
Seal the box
with the tape
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Label on the Inner Box
Inner Box:
210 mm× 208 mm×２０３ mm
Label on the Outer Box
Outer Box:
440 mm× 440 mm× 230 mm