2024年5月16日发(作者：平乐容)

Oct 2003

AO8810

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO8810 uses advanced trench technology to

provide excellent R

DS(ON)

, low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected.

Features

V

DS

(V) = 20V

I

D

= 7 A

R

DS(ON)

< 20mΩ (V

GS

= 4.5V)

R

DS(ON)

< 24mΩ (V

GS

= 2.5V)

R

DS(ON)

< 32mΩ (V

GS

= 1.8V)

ESD Rating: 2000V HBM

TSSOP-8

Top View

D1/D2

S1

S1

G1

1

2

3

4

8

7

6

5

D1/D2

S2

S2

G2

D1 D2

G1G2

S1

S2

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

ParameterSymbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

A

Pulsed Drain Current

B

T

A

=25°C

Power Dissipation

A

Maximum

20

±8

7

5.7

30

1.5

1

-55 to 150

Units

V

V

A

T

A

=25°C

T

A

=70°CI

D

I

DM

P

D

T

J

, T

STG

T

A

=70°C

W

°CJunction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A

Maximum Junction-to-Lead

C

Symbol

t ≤ 10s

Steady-State

Steady-State

R

θJA

R

θJL

Typ

64

89

53

Max

83

120

70

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

AO8810

Electrical Characteristics (T

J

=25°C unless otherwise noted)

SymbolParameterConditions

I

D

=250µA, V

GS

=0V

V

DS

=16V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±4.5V

V

DS

=0V, V

GS

=±8V

V

DS

=V

GS

I

D

=250µA

V

GS

=4.5V, V

DS

=5V

V

GS

=4.5V, I

D

=7A

T

J

=125°C

Min

20

1

5

±1

±10

0.4

30

0.6

16.5

23

20

24

29

0.76

1

20

28

24

32

1

2.5

TypMaxUnits

V

µA

µA

µA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

g

FS

V

SD

I

S

V

GS

=2.5V, I

D

=5.5A

V

GS

=1.8V, I

D

=5A

Forward TransconductanceV

DS

=5V, I

D

=7A

Diode Forward VoltageI

S

=1A,V

GS

=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

R

g

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

Gate Drain Charge

t

D(on)

Turn-On DelayTime

t

r

Turn-On Rise Time

t

D(off)

Turn-Off DelayTime

t

f

Turn-Off Fall Time

t

rr

Body Diode Reverse Recovery Time

Q

rr

Body Diode Reverse Recovery Charge

V

GS

=0V, V

DS

=10V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

1160

187

146

1.5

16

0.8

3.8

6.2

12.7

51.7

16

17.7

6.7

V

GS

=4.5V, V

DS

=10V, I

D

=7A

V

GS

=5V, V

DS

=10V, R

L

=1.35Ω,

R

GEN

=3Ω

I

F

=7A, dI/dt=100A/µs

I

F

=7A, dI/dt=100A/µs

2

A: The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

2

E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

2024年5月16日发(作者：平乐容)

Oct 2003

AO8810

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO8810 uses advanced trench technology to

provide excellent R

DS(ON)

, low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected.

Features

V

DS

(V) = 20V

I

D

= 7 A

R

DS(ON)

< 20mΩ (V

GS

= 4.5V)

R

DS(ON)

< 24mΩ (V

GS

= 2.5V)

R

DS(ON)

< 32mΩ (V

GS

= 1.8V)

ESD Rating: 2000V HBM

TSSOP-8

Top View

D1/D2

S1

S1

G1

1

2

3

4

8

7

6

5

D1/D2

S2

S2

G2

D1 D2

G1G2

S1

S2

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

ParameterSymbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

A

Pulsed Drain Current

B

T

A

=25°C

Power Dissipation

A

Maximum

20

±8

7

5.7

30

1.5

1

-55 to 150

Units

V

V

A

T

A

=25°C

T

A

=70°CI

D

I

DM

P

D

T

J

, T

STG

T

A

=70°C

W

°CJunction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A

Maximum Junction-to-Lead

C

Symbol

t ≤ 10s

Steady-State

Steady-State

R

θJA

R

θJL

Typ

64

89

53

Max

83

120

70

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

AO8810

Electrical Characteristics (T

J

=25°C unless otherwise noted)

SymbolParameterConditions

I

D

=250µA, V

GS

=0V

V

DS

=16V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±4.5V

V

DS

=0V, V

GS

=±8V

V

DS

=V

GS

I

D

=250µA

V

GS

=4.5V, V

DS

=5V

V

GS

=4.5V, I

D

=7A

T

J

=125°C

Min

20

1

5

±1

±10

0.4

30

0.6

16.5

23

20

24

29

0.76

1

20

28

24

32

1

2.5

TypMaxUnits

V

µA

µA

µA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

g

FS

V

SD

I

S

V

GS

=2.5V, I

D

=5.5A

V

GS

=1.8V, I

D

=5A

Forward TransconductanceV

DS

=5V, I

D

=7A

Diode Forward VoltageI

S

=1A,V

GS

=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

R

g

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

Gate Drain Charge

t

D(on)

Turn-On DelayTime

t

r

Turn-On Rise Time

t

D(off)

Turn-Off DelayTime

t

f

Turn-Off Fall Time

t

rr

Body Diode Reverse Recovery Time

Q

rr

Body Diode Reverse Recovery Charge

V

GS

=0V, V

DS

=10V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

1160

187

146

1.5

16

0.8

3.8

6.2

12.7

51.7

16

17.7

6.7

V

GS

=4.5V, V

DS

=10V, I

D

=7A

V

GS

=5V, V

DS

=10V, R

L

=1.35Ω,

R

GEN

=3Ω

I

F

=7A, dI/dt=100A/µs

I

F

=7A, dI/dt=100A/µs

2

A: The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

2

E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.