2024年6月3日发(作者：赏访曼)

SPTECH 2SC5570

SPTECHSiliconNPNPowerTransistor

DESCRIPTION

·HighSwitchingSpeed

·HighBreakdownVoltage-

:V

(BR)CBO

=1700V(Min)

APPLICATIONS

·Designedforhorizontaldeflectionoutputapplications.

ABSOLUTEMAXIMUMRATINGS(T

a

=25

℃)

SYMBOLPARAMETERVALUEUNIT

V

CBO

Collector-BaseVoltage1700V

V

CEO

Collector-EmitterVoltage800V

V

EBO

Emitter-BaseVoltage6V

I

C

CollectorCurrent-Continuous28A

I

CM

CollectorCurrent-Pulse56A

P

C

CollectorPowerDissipation

@T

C

=25℃

220W

T

J

JunctionTemperature150℃

T

stg

StorageTemperatureRange-55~150℃

2SC5570

1

SPTECH 2SC5570

SPTECHSiliconNPNPowerTransistor

ELECTRICALCHARACTERISTICS

T

C

=25℃unlessotherwisespecified

SYMBOL

V

CEO(SUS)

PARAMETER

Collector-EmitterSustainingVoltage

CONDITIONS

I

C

=10mA;I

B

=0

MIN

800

T

V

2SC5570

V

CE

(sat)

Collector-EmitterSaturationVoltageI

C

=20A;I

B

=5A5.0V

V

BE

(sat)

I

CBO

Base-EmitterSaturationVoltageI

C

=20A;I

B

=5A1.5V

CollectorCutoffCurrentV

CB

=800V;I

E

=010μA

I

CES

CollectorCutoffCurrentV

CE

=1700V;R

BE

=01.0mA

I

EBO

EmitterCutoffCurrentV

EB

=4V;I

C

=01.0mA

h

FE-1

DCCurrentGainI

C

=1A;V

CE

=5V830

h

FE-2

DCCurrentGainI

C

=20A;V

CE

=5V48

t

stg

StorageTime

I

C

=12A,I

B1

=2.4A;I

B2

=-4.8A

3.0μs

t

f

FallTime0.2μs

2

2024年6月3日发(作者：赏访曼)

SPTECH 2SC5570

SPTECHSiliconNPNPowerTransistor

DESCRIPTION

·HighSwitchingSpeed

·HighBreakdownVoltage-

:V

(BR)CBO

=1700V(Min)

APPLICATIONS

·Designedforhorizontaldeflectionoutputapplications.

ABSOLUTEMAXIMUMRATINGS(T

a

=25

℃)

SYMBOLPARAMETERVALUEUNIT

V

CBO

Collector-BaseVoltage1700V

V

CEO

Collector-EmitterVoltage800V

V

EBO

Emitter-BaseVoltage6V

I

C

CollectorCurrent-Continuous28A

I

CM

CollectorCurrent-Pulse56A

P

C

CollectorPowerDissipation

@T

C

=25℃

220W

T

J

JunctionTemperature150℃

T

stg

StorageTemperatureRange-55~150℃

2SC5570

1

SPTECH 2SC5570

SPTECHSiliconNPNPowerTransistor

ELECTRICALCHARACTERISTICS

T

C

=25℃unlessotherwisespecified

SYMBOL

V

CEO(SUS)

PARAMETER

Collector-EmitterSustainingVoltage

CONDITIONS

I

C

=10mA;I

B

=0

MIN

800

T

V

2SC5570

V

CE

(sat)

Collector-EmitterSaturationVoltageI

C

=20A;I

B

=5A5.0V

V

BE

(sat)

I

CBO

Base-EmitterSaturationVoltageI

C

=20A;I

B

=5A1.5V

CollectorCutoffCurrentV

CB

=800V;I

E

=010μA

I

CES

CollectorCutoffCurrentV

CE

=1700V;R

BE

=01.0mA

I

EBO

EmitterCutoffCurrentV

EB

=4V;I

C

=01.0mA

h

FE-1

DCCurrentGainI

C

=1A;V

CE

=5V830

h

FE-2

DCCurrentGainI

C

=20A;V

CE

=5V48

t

stg

StorageTime

I

C

=12A,I

B1

=2.4A;I

B2

=-4.8A

3.0μs

t

f

FallTime0.2μs

2