2024年6月4日发(作者：波坚壁)
512Mb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT25QL512ABB
Features
•SPI-compatible serial bus interface
•Single and double transfer rate (STR/DTR)
•Clock frequency
–133 MHz (MAX) for all protocols in STR
–90 MHz (MAX) for all protocols in DTR
•Dual/quad I/O commands for increased through-
put up to 90 MB/s
•Supported protocols in both STR and DTR
–Extended I/O protocol
–Dual I/O protocol
–Quad I/O protocol
•Execute-in-place (XIP)
•PROGRAM/ERASE SUSPEND operations
•Volatile and nonvolatile configuration settings
•Software reset
•Reset pin available
•3-byte and 4-byte address modes – enable memory
access beyond 128Mb
•Dedicated 64-byte OTP area outside main memory
–Readable and user-lockable
–Permanent lock with PROGRAM OTP command
•Erase capability
–Bulk erase
–Sector erase 64KB uniform granularity
–Subsector erase 4KB, 32KB granularity
•Security and write protection
–Volatile and nonvolatile locking and software
write protection for each 64KB sector
–Nonvolatile configuration locking
–Password protection
–Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
–Program/erase protection during power-up
–CRC detects accidental changes to raw data
•Electronic signature
–JEDEC-standard 3-byte signature (BA20h)
–Extended device ID: two additional bytes identify
device factory options
•JESD47H-compliant
–Minimum 100,000 ERASE cycles per sector
–Data retention: 20 years (TYP)
Options
•Voltage
–2.7–3.6V
•Density
–512Mb
•Device stacking
–Monolithic
•Device generation
•Die revision
•Pin configuration
–HOLD#
–RESET# and HOLD#
•Sector Size
–64KB
•Packages – JEDEC-standard, RoHS-
compliant
–24-ball T-PBGA 05/6mm × 8mm
(TBGA24)
–16-pin SOP2, 300 mil
(SO16W, SO16-Wide, SOIC-16)
–W-PDFN-8 8mm × 6mm
(MLP8 8mm × 6mm)
•Security features
–Standard security
•Special options
–Standard
–Automotive
•Operating temperature range
–From –40°C to +85°C
–From –40°C to +105°C
–From –40°C to +125°C
Marking
L
512
A
B
B
1
8
E
12
SF
W9
0
S
A
IT
AT
UT
09005aef864f8d51
MT25Q_QLKT_L_512_ABB_ - Rev. F 1/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
512Mb, 3V Multiple I/O Serial Flash Memory
Features
Figure 51: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) ................... 94
Figure 52: Hold Timing .................................................................................................................................. 94
Figure 53: Output Timing for STR ................................................................................................................... 95
Figure 54: Output Timing for DTR .................................................................................................................. 95
09005aef864f8d51
MT25Q_QLKT_L_512_ABB_ - Rev. F 1/18 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
512Mb, 3V Multiple I/O Serial Flash Memory
Features
Table 51: AC Characteristics and Operating Conditions ................................................................................... 89
Table 52: AC RESET Conditions ...................................................................................................................... 92
Table 53: Program/Erase Specifications .......................................................................................................... 96
512Mb, 3V Multiple I/O Serial Flash Memory
Device Description
Device Description
The MT25Q is a high-performance multiple input/output serial Flash memory device. It
features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionali-
ty, advanced write protection mechanisms, and extended address access. Innovative,
high-performance, dual and quad input/output commands enable double or quadru-
ple the transfer bandwidth for READ and PROGRAM operations.
Figure 2: Block Diagram
RESET#
HOLD#
W#
S#
C
DQ0
DQ1
DQ2
DQ3
Control logic
High voltage
generator
64 OTP bytes
I/O shift register
Address register
and counter
256 byte
data buffer
Status
register
Y
d
e
c
o
d
e
r
Memory
256 bytes (page size)
X decoder
Note:
page of memory can be individually programmed, but the device is not page-eras-
able.
09005aef864f8d51
MT25Q_QLKT_L_512_ABB_ - Rev. F 1/18 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
2024年6月4日发(作者：波坚壁)
512Mb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT25QL512ABB
Features
•SPI-compatible serial bus interface
•Single and double transfer rate (STR/DTR)
•Clock frequency
–133 MHz (MAX) for all protocols in STR
–90 MHz (MAX) for all protocols in DTR
•Dual/quad I/O commands for increased through-
put up to 90 MB/s
•Supported protocols in both STR and DTR
–Extended I/O protocol
–Dual I/O protocol
–Quad I/O protocol
•Execute-in-place (XIP)
•PROGRAM/ERASE SUSPEND operations
•Volatile and nonvolatile configuration settings
•Software reset
•Reset pin available
•3-byte and 4-byte address modes – enable memory
access beyond 128Mb
•Dedicated 64-byte OTP area outside main memory
–Readable and user-lockable
–Permanent lock with PROGRAM OTP command
•Erase capability
–Bulk erase
–Sector erase 64KB uniform granularity
–Subsector erase 4KB, 32KB granularity
•Security and write protection
–Volatile and nonvolatile locking and software
write protection for each 64KB sector
–Nonvolatile configuration locking
–Password protection
–Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
–Program/erase protection during power-up
–CRC detects accidental changes to raw data
•Electronic signature
–JEDEC-standard 3-byte signature (BA20h)
–Extended device ID: two additional bytes identify
device factory options
•JESD47H-compliant
–Minimum 100,000 ERASE cycles per sector
–Data retention: 20 years (TYP)
Options
•Voltage
–2.7–3.6V
•Density
–512Mb
•Device stacking
–Monolithic
•Device generation
•Die revision
•Pin configuration
–HOLD#
–RESET# and HOLD#
•Sector Size
–64KB
•Packages – JEDEC-standard, RoHS-
compliant
–24-ball T-PBGA 05/6mm × 8mm
(TBGA24)
–16-pin SOP2, 300 mil
(SO16W, SO16-Wide, SOIC-16)
–W-PDFN-8 8mm × 6mm
(MLP8 8mm × 6mm)
•Security features
–Standard security
•Special options
–Standard
–Automotive
•Operating temperature range
–From –40°C to +85°C
–From –40°C to +105°C
–From –40°C to +125°C
Marking
L
512
A
B
B
1
8
E
12
SF
W9
0
S
A
IT
AT
UT
09005aef864f8d51
MT25Q_QLKT_L_512_ABB_ - Rev. F 1/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
512Mb, 3V Multiple I/O Serial Flash Memory
Features
Figure 51: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) ................... 94
Figure 52: Hold Timing .................................................................................................................................. 94
Figure 53: Output Timing for STR ................................................................................................................... 95
Figure 54: Output Timing for DTR .................................................................................................................. 95
09005aef864f8d51
MT25Q_QLKT_L_512_ABB_ - Rev. F 1/18 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
512Mb, 3V Multiple I/O Serial Flash Memory
Features
Table 51: AC Characteristics and Operating Conditions ................................................................................... 89
Table 52: AC RESET Conditions ...................................................................................................................... 92
Table 53: Program/Erase Specifications .......................................................................................................... 96
512Mb, 3V Multiple I/O Serial Flash Memory
Device Description
Device Description
The MT25Q is a high-performance multiple input/output serial Flash memory device. It
features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionali-
ty, advanced write protection mechanisms, and extended address access. Innovative,
high-performance, dual and quad input/output commands enable double or quadru-
ple the transfer bandwidth for READ and PROGRAM operations.
Figure 2: Block Diagram
RESET#
HOLD#
W#
S#
C
DQ0
DQ1
DQ2
DQ3
Control logic
High voltage
generator
64 OTP bytes
I/O shift register
Address register
and counter
256 byte
data buffer
Status
register
Y
d
e
c
o
d
e
r
Memory
256 bytes (page size)
X decoder
Note:
page of memory can be individually programmed, but the device is not page-eras-
able.
09005aef864f8d51
MT25Q_QLKT_L_512_ABB_ - Rev. F 1/18 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.