2024年6月10日发(作者：义秀越)
UCC27210
UCC27211
SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012
120-VBoot,4-APeak,HighFrequencyHigh-Side/Low-SideDriver
CheckforSamples:UCC27210,UCC27211
FEATURES
•DrivesTwoN-ChannelMOSFETsin
High-Side/Low-SideConfigurationwith
IndependentInputs
MaximumBootVoltage120-VDC
4-ASink,4-ASourceOutputCurrents
0.9-ΩPull-Up/Pull-DownResistance
InputPinscanTolerate-10Vto20Vandare
IndependentofSupplyVoltageRange
TTLorPseudo-CMOSCompatibleInput
Versions
8-Vto17-VVDDOperatingRange,(20VABS
MAX)
7.2-nsRiseand5.5-nsFallTimewith1000-pF
Load
FastPropagationDelayTimes(18nstypical)
2-nsDelayMatching
SymmetricalUnderVoltageLockoutfor
High-SideandLow-SideDriver
AllIndustryStandardPackagesAvailable
(SOIC-8,PowerPAD™SOIC-8,4-mmx4-mm
SON-8and4-mmx4-mmSON-10)
Specifiedfrom-40to140°C
APPLICATIONS
•
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•
PowerSuppliesforTelecom,Datacom,and
Merchant
Half-BridgeandFull-BridgeConverters
Push-PullConverters
HighVoltageSynchronous-BuckConverters
Two-SwitchForwardConverters
Active-ClampForwardConverters
Class-DAudioAmplifiers
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DESCRIPTION
TheUCC27210andUCC27211Driversarebasedon
thepopularUCC27200andUCC27201MOSFET
drivers,butofferseveralsignificantperformance
tputpull-upandpull-down
currenthasbeenincreasedto4-Asource/4-Asink,
andpull-up/pull-downresistancehavebeenreduced
to0.9Ω,therebyallowingfordrivinglargepower
MOSFETswithminimizedswitchinglossesduringthe
transitionthroughtheMOSFET’
inputstructureisnowabletodirectlyhandle-10
VDC,whichincreasesrobustnessandalsoallows
directinterfacetogate-drivetransformerswithout
utsarealso
independentofsupplyvoltageandhavea20-V
maximumrating.
•
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas
Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PowerPADisatrademarkofTexasInstruments.
Copyright©2011–2012,TexasInstrumentsIncorporated
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexas
tionprocessingdoesnot
necessarilyincludetestingofallparameters.
UCC27210
UCC27211
SLUSAT7B–NOVEMBER2011–
dsshouldbeshortedtogetherorthedeviceplacedinconductivefoam
duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
DESCRIPTION(CONT.)
TheUCC27210/1’sswitchingnode(HSpin)isabletohandle-18Vmaximumwhichallowsthehigh-sidechannel
tobeprotectedfrominher
UCC27210(Pseudo-CMOSinputs)andUCC27211(TTLinputs)haveincreasedhysteresisallowingforinterface
toanalogordigitalPWMcontrollerswithenhancednoiseimmunity.
Thelow-sideandhigh-sidegatedriversareindependentlycontrolledandmatchedto2nsbetweentheturnon
andturnoffofeachother.
Anon--voltagelockoutis
providedforboththehigh-sideandthelow-sidedriversprovidingsymmetricturn-on/turn-offbehaviorandforcing
theoutputslowifthedrivevoltageisbelowthespecifiedthreshold.
Bothdevicesareofferedin8-pinSOIC(D),PowerPAD™SOIC-8(DDA),4-mmx4-mmSON-8(DRM)and
SON-10(DPR)packages.
TypicalApplicationDiagrams
+12V
+100V
+12V
V
DD
HB
SECONDARY
SIDE
CIRCUIT
V
DD
HB
+100V
SECONDARY
SIDE
CIRCUIT
C
O
N
T
R
O
L
PWM
CONTROLLER
LI
HS
PWM
CONTROLLER
LI
C
O
N
T
R
O
L
HI
DRIVE
HI
HO
HI
DRIVE
HI
HO
HS
DRIVE
LO
UCC27210
VSS
LO
DRIVE
LO
UCC27211
VSS
LO
ISOLATION
AND
FEEDBACK
+12V
VDD
HB
+100V
HI
C
O
N
T
R
O
L
DRIVE
HI
HO
HS
LI
DRIVE
LO
UCC27211
LO
ORDERINGINFORMATION
TEMPERATURERANGET
A
=T
J
INPUT
COMPATIBILITY
PseudoCMOS
TTL
SOIC-8(D)
(2)
UCC27210D
UCC27211D
(1)
PACKAGEDDEVICES
(1)
PowerPAD™
SOIC-8(DDA)
(2)
UCC27210DDA
UCC27211DDA
SON-8(DRM)
(3)
UCC27210DRM
UCC27211DRM
SON-10(DPR)
(4)
UCC27210DPR
UCC27211DPR
-40°Cto140°C
(1)
(2)
(3)
(4)
TheseproductsarepackagedinLead(Pb)-FreeandgreenleadfinishofPdNiAuwhichiscompatiblewithMSLlevel1at255°Cto
260°CpeakreflowtemperaturetobecompatiblewitheitherleadfreeorSn/Pbsolderingoperations.
D(SOIC-8)andDDA(PowerPad™SOIC-8)
UCC27210ADR/UCC27211ADR)toorderquantitiesof2,500devicesperreel.
DRM(SON-8)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADRMT/UCC27211ADRMT,orlargerreels
of3000piecesaspartnumberUCC27210ADRMR/UCC27211ADRMR.
DPR(SON-10)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADPRT/UCC27211ADPRT,orlargereels
of3000piecesaspartnumberUCC27210ADPRR/UCC27211ADPRR.
2SubmitDocumentationFeedback
Copyright©2011–2012,TexasInstrumentsIncorporated
ProductFolderLink(s):UCC27210UCC27211
UCC27210
UCC27211
SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012
ABSOLUTEMAXIMUMRATINGS
overoperatingfree-airtemperaturerange(unlessotherwisenoted)
MIN
Supplyvoltagerange,V
DD
(1)
,V
HB
-V
HS
InputvoltagesonLIandHI,V
LI
,V
HI
OutputvoltageonLO,V
LO
OutputvoltageonHO,V
HO
VoltageonHS,V
HS
VoltageonHB,V
HB
HumanBodyModel(HBM)
ESD
FieldInducedChargedDeviceModel
(FICDM)
-40
-65
DC
Repetitivepulse<100ns
(2)
DC
Repetitivepulse<100ns
(2)
DC
Repetitivepulse<100ns
(2)
MAX
-0.3
-10
-0.3
-2
20
20
V
DD
+0.3
V
DD
+0.3
V
HB
+0.3
V
HB
+0.3
115
115
120
2
1
150
150
300
UNIT
V
HS
–0.3
V
HS
-2
-1
-18
-0.3
V
kV
Operatingvirtualjunctiontemperaturerange,T
J
Storagetemperature,T
STG
Leadtemperature(soldering,10sec.)
(1)
(2)
°C
tsarepositiveinto,negativeoutofthespecifiedterminal.
Verifiedatbenchcharacterization.
RECOMMENDEDOPERATINGCONDITIONS
allvoltagesarewithrespecttoV
SS
;currentsarepositiveintoandnegativeoutofthespecifiedterminal.–40°C J =T A < 140°C(unlessotherwisenoted) PARAMETER Supplyvoltagerange,V DD ,V HB -V HS VoltageonHS,V HS VoltageonHS,V HS (repetitivepulse<100ns) VoltageonHB,V HB VoltageslewrateonHS Operatingjunctiontemperaturerange-40 MIN 8 -1 -15 V HS +8, V DD –1 TYP 12 MAX 17 105 110 V HS +17, 115 50 140 V/ns °C V UNIT Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback3 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– THERMALINFORMATION UCC27210/11 (1) THERMALMETRIC θ JA θ JCtop θ JB ψ JT ψ JB θ JCbot (1) (2) (3) (4) (5) (6) (7) Junction-to-ambientthermalresistance (2) Junction-to-case(top)thermalresistance (3) Junction-to-boardthermalresistance (4) Junction-to-topcharacterizationparameter (5) Junction-to-boardcharacterizationparameter (6) Junction-to-case(bottom)thermalresistance (7) D 8PINS 111.8 56.9 53.0 7.8 52.3 n/a DDA 8PINS 37.7 47.2 9.6 2.8 9.4 3.6 °C/W UNITS Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953. Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,as specifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a. Thejunction-to-case(top)thermific JEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. Thejunction-to-boardthermalresistanceisobtainedbysimulatinginanenvironmentwitharingcoldplatefixturetocontrolthePCB temperature,asdescribedinJESD51-8. Thejunction-to-topcharacterizationparameter,ψ JT ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-boardcharacterizationparameter,ψ JB ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-case(bottom)thermalresistanceisobtainedbysimulatingacoldplatetestontheexposed(power)ific JEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. THERMALINFORMATION UCC27210/11 (1) THERMALMETRIC θ JA θ JCtop θ JB ψ JT ψ JB θ JCbot (1) (2) (3) (4) (5) (6) (7) Junction-to-ambientthermalresistance (2) Junction-to-case(top)thermalresistance (3) Junction-to-boardthermalresistance (4) Junction-to-topcharacterizationparameter (5) Junction-to-boardcharacterizationparameter (6) Junction-to-case(bottom)thermalresistance (7) DRM 8PINS 33.9 33.2 11.4 0.4 11.7 2.3 DPR 10PINS 36.8 36.0 14.0 0.3 14.2 3.4 °C/W UNITS Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953. Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,as specifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a. Thejunction-to-case(top)thermific JEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. Thejunction-to-boardthermalresistanceisobtainedbysimulatinginanenvironmentwitharingcoldplatefixturetocontrolthePCB temperature,asdescribedinJESD51-8. Thejunction-to-topcharacterizationparameter,ψ JT ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-boardcharacterizationparameter,ψ JB ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-case(bottom)thermalresistanceisobtainedbysimulatingacoldplatetestontheexposed(power)ific JEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. 4SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 ELECTRICALCHARACTERISTICS V DD =V HB =12V,V HS =V SS =0V,noloadonLOorHO,T A =T J =-40°Cto140°C,(unlessotherwisenoted) PARAMETER SupplyCurrents I DD I DDO I HB I HBO I HBS I HBSO Input V HIT V LIT V IHYS R IN V HIT V LIT V IHYS R IN V DDR V DDHYS V HBR V HBHYS V F V FI R D V LOL V LOH Inputvoltagethreshold Inputvoltagethreshold Inputvoltagehysteresis Inputpulldownresistance Inputvoltagethreshold Inputvoltagethreshold Inputvoltagehysteresis Inputpulldownresistance V DD turn-onthreshold Hysteresis V HB turn-onthreshold Hysteresis Low-currentforwardvoltage High-currentforwardvoltage Dynamicresistance,ΔVF/ΔI Low-leveloutputvoltage Highleveloutputvoltage Peakpull-upcurrent (1) Peakpull-downcurrent HOGATEDriver V HOL V HOH Low-leveloutputvoltage High-leveloutputvoltage Peakpull-upcurrent (1) Peakpull-downcurrent (1) (1)Ensuredbydesign. I HO =100mA I HO =-100mA,V HOH =V HB -V HO V HO =0V V HO =12V 0.05 0.1 0.09 0.16 3.7 4.5 0.15 0.27 V A (1) TESTCONDITION V(LI)=V(HI)=0V UCC27210 UCC27211 f=500kHz,C LOAD =0 V(LI)=V(HI)=0V f=500kHz,C LOAD =0 V(HS)=V(HB)=115V f=500kHz,C LOAD =0 MIN 0.05 2.4 2.4 0.015 1.5 TYP 0.085 2.6 2.5 0.065 2.5 0.0005 0.07 MAX 0.17 4.3 4.3 0.1 4 0.13 0.9 5.8 4.0 UNITS V DD quiescentcurrent V DD operatingcurrent mA Bootvoltagequiescentcurrent Bootvoltageoperatingcurrent HBtoV SS quiescentcurrent HBtoV SS operatingcurrent µA mA 4.2 UCC27210 2.4 5.0 3.2 1.8 102 V kΩ 1.9 UCC27211 1.3 2.3 1.6 700 68 2.7 1.9 V mV kΩ Under-VoltageLockout(UVLO) 6.2 5.6 7.0 0.5 6.7 1.1 I VDD-HB =100µA I VDD-HB =100mA I VDD-HB =100mAand80mA I LO =100mA I LO =-100mA,V LOH =V DD -V LO V LO =0V V LO =12V 0.3 0.05 0.1 0.65 0.85 0.5 0.09 0.16 3.7 4.5 0.8 0.95 0.85 0.15 0.27 7.9 7.8 V BootstrapDiode V Ω LOGateDriver V A Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback5 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– ELECTRICALCHARACTERISTICS(continued) V DD =V HB =12V,V HS =V SS =0V,noloadonLOorHO,T A =T J =-40°Cto140°C,(unlessotherwisenoted) PARAMETER SwitchingParameters:PropagationDelays T DLFF T DHFF T DLRR T DHRR T DLFF T DHFF T DLRR T DHRR V LI fallingtoV LO falling V HI fallingtoV HO falling V LI risingtoV LO rising V HI risingtoV HO rising V LI fallingtoV LO falling V HI fallingtoV HO falling V LI risingtoV LO rising V HI risingtoV HO rising T J =25°C UCC27210 T MOFF T MON T MOFF FromLOOFFtoHOON FromHOOFFtoLOON UCC27211 FromLOOFFtoHOON T J =–40°Cto140°C T J =25°C T J =–40°Cto140°C T J =25°C T J =–40°Cto140°C T J =25°C T J =–40°Cto140°C UCC27211,C LOAD =0 UCC27210,C LOAD =0 17 17 18 18 10 10 10 10 21 21 24 24 17 17 18 18 3 3 3 3 2 2 2 2 7.2 7.2 5.5 5.5 0.36 0.15 0.6 0.4 µs ns 37 37 46 46 30 30 40 40 11 14 11 14 9.5 14 9.5 14 ns TESTCONDITIONMINTYPMAXUNITS SwitchingParameters:DelayMatching T MON FromHOOFFtoLOONns ns ns ns SwitchingParameters:OutputRiseandFallTime t R t R t F t F t R t F LOrisetime HOrisetime LOfalltime HOfalltime LO,HO LO,HO Minimuminputpulsewidththatchangesthe output Bootstrapdiodeturn-offtime (2) (3) (4) (2)(3) C LOAD =1000pF,from10%to90% C LOAD =1000pF,from90%to10% C LOAD =0.1µF,(3Vto9V) C LOAD =0.1µF,(9Vto3V) SwitchingParameters:Miscellaneous 50 I F =20mA,I REV =0.5A (4) ns 20 Ensuredbydesign. I F :Forwardcurrentappliedtobootstrapdiode,I REV :Reversecurrentappliedtobootstrapdiode. TypicalvaluesforT A =25°C. 6SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TimingDiagrams LI Input (HI,LI) T DLRR ,T DHRR HI LO Output (HO,LO) T DLFF ,T DHFF HO T MON T MOFF Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback7 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– DEVICEINFORMATION FunctionalBlockDiagram 2 UVLO LEVEL SHIFT 5 3 HB HO HS 4 HI V DD 1 UVLO 8 LO V SS LI 67 SOIC-8(D) TOPVIEW PowerPad TM SOIC-8(DDA) TOPVIEW VDD 18 LO VDD 1 Exposed Thermal DiePad 8LO HB 27 VSS HB 27 VSS HO 36 LI HO 36LI HS 45 HI HS 45HI SON-8(DRM) TOPVIEW VDD 1 Exposed Thermal DiePad* 8 LO VDD HB 1 SON-10 (DPR) TOPVIEW 10 LO VSS LI HI NC HB 2 2 9 7 VSS HO 3 8 HO 36LI HS 4 7 HS 45HI NC 5 6 8SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TERMINALFUNCTIONS PINNAME VDD PIN D/DDA/DRM 1 DPR 1 DESCRIPTION -couplethispintoV SS (GND).Typical decouplingcapacitorrangeis0.22µFto1.0µF. tstrapdiodeison-chipbuttheexternalbootstrap tpositivesideofthebootstrapcapacitortothispin. TypicalrangeofHBbypasscapacitoris0.022µFto0.1µacitorvalueis dependantonthegatechargeofthehigh-sideMOSFETandshouldalsobeselected basedonspeedandripplecriteria ttothegateofthehigh-sidepowerMOSFET. ttosourceofhigh-sidepowerMOSFET. Connectthenegativesideofbootstrapcapacitortothispin. High-sideinput. Low-sideinput. Negativesupplyterminalforthedevicewhichisgenerallygrounded. ttothegateofthelow-sidepowerMOSFET. NotConnected. UtilizedontheDDA,icallyreferencedtoV SS (GND).ConnecttoalargethermalmasstraceorGNDplanetodramaticallyimprove thermalperformance. HB22 HO HS HI LI VSS LO N/C PowerPAD™ (1) (1) 3 4 5 6 7 8 - Pad 3 4 7 8 9 10 5/6 Pad ThePowerPAD™ritiselectricallyandthermallyconnectedtothe substratewhichisthegroundofthedevice. Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback9 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– TYPICALCHARACTERISTICS QUIESCENTCURRENT vs SUPPLYVOLTAGE 100 I D D , I H B − Q u i e s c e n t C u r r e n t ( µ A ) T = 25°C 80 I D D O − O p e r a t i n g C u r r e n t ( m A ) 10 100 UCC27210, V DD = 12V UCC27210IDDOPERATINGCURRENT vs FREQUENCY 60 1 C L =0pF, T=−40°C C L =0pF, T=25°C C L =0pF, T=140°C C L =1000pF, T=25°C C L =1000pF, T=140°C C L =4700pF, T=140°C 10100 Frequency (kHz) 1000 G002 40 20 UCC27210/1 I DD UCC27210/1 I HB 0 6 V DD = V HB − Supply Voltage (V) 1820 G001 0.1 0.01 Figure1. UCC27211IDDOPERATINGCURRENT vs FREQUENCY 100 UCC27211, V DD = 12V I D D O − O p e r a t i n g C u r r e n t ( m A ) 10 I H B O − O p e r a t i n g C u r r e n t ( m A ) 10 100 Figure2. BOOTVOLTAGEOPERATINGCURRENT vs FREQUENCY(HBtoHS) UCC27210/1, V HB − V HS = 12V 1 C L =0pF, T=−40°C C L =0pF, T=25°C C L =0pF, T=140°C C L =1000pF, T=25°C C L =1000pF, T=140°C C L =4700pF, T=140°C 10100 Frequency (kHz) 1000 G003 1 C L =0pF, T=−40°C C L =0pF, T=25°C C L =0pF, T=140°C C L =1000pF, T=25°C C L =1000pF, T=140°C C L =4700pF, T=140°C 10100 Frequency (kHz) 1000 G004 0.10.1 0.010.01 Figure3. UCC27210/11INPUTTHRESHOLD vs SUPPLYVOLTAGE 6 H I , L I − I n p u t T h r e s h o l d V o l t a g e ( V ) 5 4 3 2 1 0 −1 8 UCC27210, Rising UCC27210, Falling UCC27211, Rising UCC27211, Falling 1216 V DD − Supply Voltage (V) 20 G005 Figure4. UCC27210/11INPUTTHRESHOLDS vs TEMPERATURE 6 H I , L I − I n p u t T h r e s h o l d V o l t a g e ( V ) V DD = 12V 5 4 3 2 1 0 −1 −40−200 UCC27210, Rising UCC27210, Falling UCC27211, Rising UCC27211, Falling 20406080 Temperature (°C) 100120140 G006 T = 25°C 6. 10SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TYPICALCHARACTERISTICS(continued) LOANDHOHIGHLEVELOUTPUTVOLTAGE vs TEMPERATURE 0.32 V O H − L O / H O O u t p u t V o l t a g e ( V ) 0.28 0.24 0.2 0.16 0.12 0.08 0.04 0 −40−200 UCC27210/1, V DD =V HB =8V UCC27210/1, V DD =V HB =12V UCC27210/1, V DD =V HB =16V UCC27210/1, V DD =V HB =20V 20406080 Temperature (°C) 100120140 G007 LOANDHOLOWLEVELOUTPUTVOLTAGE vs TEMPERATURE 0.2 V O L − L O / H O O u t p u t V o l t a g e ( V ) I HO =I LO = 100mA 0.16 I HO =I LO = 100mA 0.12 0.08 UCC27210/1, V DD =V HB =8V UCC27210/1, V DD =V HB =12V UCC27210/1, V DD =V HB =16V UCC27210/1, V DD =V HB =20V −2 Temperature (°C) 100120140 G008 0.04 0 −40 Figure7. UNDERVOLTAGELOCKOUTTHRESHOLD vs TEMPERATURE 8 7.6 7.2 H y s t e r e s i s ( V ) T h r e s h o l d ( V ) 6.8 6.4 6 5.6 5.2 −40−200 0.3 VDD Rising Threshold HB Rising Threshold 20406080 Temperature (°C) 100120140 G009 Figure8. UNDERVOLTAGELOCKOUTTHRESHOLDHYSTERESIS vs TEMPERATURE 1.5 1.2 0.9 0.6 VDD UVLO Hysteresis HB UVLO Hysteresis 0 −40−2 Temperature (°C) 100120140 G010 Figure9. UCC27210PROPAGATIONDELAYS vs TEMPERATURE 40 36 P r o p a g a t i o n D e l a y ( n s ) 32 28 24 20 16 12 8 4 0 −40−2 Temperature (°C) 100 TDLRR TDLFF TDHRR TDHFF 120140 G011 Figure10. UCC27211PROPAGATIONDELAYS vs TEMPERATURE 32 UCC27211, V DD =V HB =12V P r o p a g a t i o n D e l a y ( n s ) 24 UCC27210, V DD =V HB =12V 16 8 TDLRR TDLFF TDHRR TDHFF −2 Temperature (°C) 100120140 G012 0 −40 12. Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback11 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– TYPICALCHARACTERISTICS(continued) UCC27210PROPAGATIONDELAYS vs SUPPLYVOLTAGE 32 28 P r o p a g a t i o n D e l a y ( n s ) 24 20 16 12 8 4 0 81216 V DD =V HB − Supply Voltage (V) TDLRR TDLFF TDHRR TDHFF 20 G012 UCC27211PROPAGATIONDELAYS vs SUPPLYVOLTAGE 32 28 P r o p a g a t i o n D e l a y ( n s ) 24 20 16 12 8 4 0 81216 V DD =V HB − Supply Voltage (V) TDLRR TDLFF TDHRR TDHFF 20 G014 UCC27210, T=25°CUCC27211, T=25°C Figure13. DELAYMATCHING vs TEMPERATURE 10 V DD =V HB =12V I L O , I H O − O u t p u t C u r r e n t ( A ) 8 D e l a y M a t c h i n g ( n s ) 6 4 2 0 −2 −40 UCC27210, TMon UCC27210, TMoff UCC27211, TMon UCC27211, TMoff −2 Temperature (°C) 100120140 G015 Figure14. OUTPUTCURRENT vs OUTPUTVOLTAGE 5 V DD =V HB =12V 4 3 2 1 Pull Down Current Pull Up Current 02468 V LO , V HO − Output Voltage (V) 1012 G016 0 16. 12SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TYPICALCHARACTERISTICS(continued) DIODECURRENT vs DIODEVOLTAGE 100 NEGATIVE10-VINPUT 10 D i o d e C u r r e n t ( m A ) 1 0.1 0.01 0.001 500750 Diode Voltage (mV) 800850 G017 Figure17. STEPINPUT Figure18. SYMMETRICALUVLO 20. Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback13 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– APPLICATIONINFORMATION FunctionalDescription TheUCC27210/11representTexasInstruments’latestgenerationofhighvoltagegatedriverswhichare designedtodriveboththehigh-sideandlow-sideofN-ChannelMOSFETsinahalf-/full-bridgeorsynchronous ating allowsforN-ChannelMOSFETcontrolinhalf-bridge,full-bridge,pushpull,two-switchforwardandactiveclamp forwardconverters. TheUCC27210/11feature4-Asource/sinkcapability,industrybest-in-classswitchingcharacteristicsandahost eaturescombinetoensureefficient,robustandreliable operationinhigh-frequencyswitchingpowercircuits. 27210/11Highlights FEATURE 4-Asourceandsinkcurrentwith0.9-Ωoutputresistance Inputpins(HIandLI)candirectlyhandle-10VDCupto20VDC 120-Vinternalbootdiode Switchnode(HSpin)abletohandle-18Vmaximumfor100ns RobustESDcircuitrytohandlevoltagespikes 18-nspropagationdelaywith7.2-ns/5.5-nsrise/fallTimes 2-ns(typ)delaymatchingbetweenchannels SymmetricalUVLOcircuit CMOSoptimizedthresholdorTTLoptimizedthresholdswith increasedhysteresis BENEFIT HighpeakcurrentidealfordrivinglargepowerMOSFETswith minimalpowerloss(fast-drivecapabilityatMillerplateau) Increasedrobustnessandabilitytohandleunder/ interfacedirectlytogate-drivetransformerswithouthavingtouse rectificationdiodes Providesvoltagemargintomeettelecom100-Vsurgerequirements Allowsthehigh-sidechanneltohaveextraprotectionfrominherent negativevoltagescausedparasiticinductanceandstray capacitance. ExcellentimmunitytolargedV/dTconditions Best-in-classswitchingcharacteristicsandextremelylow-pulse transmissiondistortion Avoidstransformervolt-secondoffsetinbridge Ensureshigh-sideandlow-sideshutdownatthesametime sed hysteresisoffersaddednoiseimmunity InUCC27210/11,thehighsideandlowsideeachhaveindependentinputswhichallowmaximumflexibilityof tdiodeforthehigh-sidedriverbiassupplyisinternaltothe 27210isthePseudo-CMOScompatibleinputversionandtheUCC27211 h-sidedriverisreferencedtotheswitchnode(HS)whichis typicall-sidedriveris referencedtoV SS ctionscontainedaretheinputstages,UVLOprotection,level shift,bootdiode,andoutputdriverstages. 14SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 InputStages utimpedanceoftheUCC27210is100 kΩ100kΩisapull-downresistancetoV SS (ground). TheUCC27210Pseudo-CMOSinputstructurehasbeendesignedtoprovidelargehysteresisandatthesame timCMOSdesigns,theinput gso,thehigh-levelinputthresholdcanbecome 27210recognizesthefactthatVDDlevelsaretrendingdownward anditthereforeprovidesarisingthresholdwith5.0V(typ)andfallingthresholdwith3.2V(typ).Theinput hysteresisoftheUCC27210is1.8V(typ). TheinputstagesoftheUCC27211haveimpedanceof70kΩnominalandinputcapacitanceisapproximately2 -downresistancetoV SS (ground)is70kΩ.Thelogiclevelcompatibleinputprovidesarisingthresholdof 2.3Vandafallingthresholdof1.6V. UnderVoltageLockout(UVLO) Thebiassuppliesforthehigh-sideandlow-sidedrivershaveUVLOprotection.V DD aswellasV HB toV HS DD UVLOdisablesbothdriverswhenV DD isbelowthespecified ingV DD UVLOdisablesonlythehigh-side driverwhentheV HB toV HS HB UVLOrisingthresholdis 6.7Vwith1.1-Vhysteresis. LevelShift Thelevelshiftcircuitistheinterfacefromthehigh-sideinputtothehigh-sidedriverstagewhichisreferencedto theswitchnode(HS).ThelevelshiftallowscontroloftheHOoutputreferencedtotheHSpinandprovides excellentdelaymatchingwiththelow-sidedriver. BootDiode Thebootdiodenecessarytogeneratethehigh-sidebiasisincludedintheUCC27210/ diodeanodeisconnectedtoV DD andcathodeconnectedtoV HB .WiththeV HB capacitorconnectedtoHBandthe HSpins,theV HB capacitt diodeprovidesfastrecoverytimes,lowdioderesistance,andvoltageratingmargintoallowforefficientand reliableoperation. OutputStages ewrate,lowresistanceand highpeakcurrentcapabilit low-sideoutputstageisreferencedfromV DD toV SS andthehighsideisreferencedfromV HB toV HS . Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback15 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– LayoutRecommendations To • • • • • • • improvetheswitchingcharacteristicsandefficiencyofadesign,thefollowinglayoutrulesshouldbefollowed. LocatethedriverascloseaspossibletotheMOSFETs. LocatetheV DD andV HB (bootstrap)capacitorsascloseaspossibletothedriver. thermalpadoftheDDAandDRMpackageasGNDby connectingittotheVSSpin(GND).TheGNDtracefromthedrivergoesdirectlytothesourceofthe MOSFETbutshouldnotbeinthehighcurrentpathoftheMOSFET(S)drainorsourcecurrent. UsesimilarrulesfortheHSnodeasforGNDforthehigh-sidedriver. UsewidetracesforLOandHOcloselyfollowingtheassociatedGNDorHStraces.60to100-milswidthis preferablewherepossible. UseasleasttwoormoreviasifthedriveroutputsorSWnodeneedstoberoutedfromonelayertoanother. ForGNDthenumberofviasneedstobeaconsiderationofthethermalpadrequirementsaswellasparasitic inductance. AvoidLIandHI(driverinput)goingclosetotheHSnodeoranyotherhighdV/dTtracesthatcaninduce significantnoiseintotherelativelyhighimpedanceleads. KeepinmindthatapoorlayoutcancauseasignificantdropinefficiencyversusagoodPCBlayoutandcan evenleadtodecreasedreliabilityofthewholesystem. ExampleComponentPlacement 27210/11ComponentPlacement AdditionalReferences •AdditionallayoutguidelinesforPCBlandpatternsmaybefoundin,QFN/SONPCBAttachment,Application Brief(TexasInstrument'sLiteratureNumberSLUA271) •Additionalthermalperformanceguidelinesmaybefoundin,PowerPAD™ThermallyEnhancedPackage ApplicationReport,ApplicationReport(TexasInstrument'sLiteratureNumberSLMA002A) •Additionalthermalperformanceguidelinesmaybefoundin,PowerPAD™MadeEasy,ApplicationReport (TexasInstrument'sLiteratureNumberSLMA004) 16SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 REVISIONHISTORY ChangesfromRevisionA(November,2011)toRevisionB • Page 2 Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback17 ProductFolderLink(s):UCC27210UCC27211 PACKAGE OPTION ADDENDUM 3-Feb-2012 PACKAGING INFORMATION Orderable Device UCC27210D UCC27210DDA UCC27210DDAR UCC27210DPRR UCC27210DPRT UCC27210DR UCC27210DRMR UCC27210DRMT UCC27211D UCC27211DDA UCC27211DDAR UCC27211DPRR UCC27211DPRT UCC27211DR UCC27211DRMR UCC27211DRMT (1) Status (1) Package TypePackage Drawing SOICD DDA DDA DPR DPR D DRM DRM D DDA DDA DPR DPR D DRM DRM Pins 8 8 8 10 10 8 8 8 8 8 8 10 10 8 8 8 Package Qty 75 75 2500 3000 250 2500 3000 250 75 75 2500 3000 250 2500 3000 250 Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) ACTIVEGreen (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) CU NIPDAULevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM PREVIEWSO PowerPAD PREVIEWSO PowerPAD ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE WSON WSON SOIC VSON VSON SOIC PREVIEWSO PowerPAD PREVIEWSO PowerPAD ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE WSON WSON SOIC VSON VSON The marketing status values are defined as follows: Addendum-Page 1 PACKAGE OPTION ADDENDUM 3-Feb-2012 ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check /productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGEMATERIALSINFORMATION 2-Feb-2012 TAPEANDREELINFORMATION *Alldimensionsarenominal DevicePackagePackagePins TypeDrawing WSON WSON SOIC VSON WSON WSON SOIC VSON VSON DPR DPR D DRM DPR DPR D DRM DRM 10 10 8 8 10 10 8 8 8 SPQReelReelA0 DiameterWidth(mm) (mm)W1(mm) 330.0 180.0 330.0 330.0 330.0 180.0 330.0 330.0 180.0 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 4.25 4.25 6.4 4.25 4.25 4.25 6.4 4.25 4.25 B0 (mm) 4.25 4.25 5.2 4.25 4.25 4.25 5.2 4.25 4.25 K0 (mm) 1.15 1.15 2.1 1.15 1.15 1.15 2.1 1.15 1.15 P1 (mm) 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 WPin1 (mm)Quadrant 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 Q2 Q2 Q1 Q2 Q2 Q2 Q1 Q2 Q2 UCC27210DPRR UCC27210DPRT UCC27210DR UCC27210DRMR UCC27211DPRR UCC27211DPRT UCC27211DR UCC27211DRMR UCC27211DRMT 3000 250 2500 3000 3000 250 2500 3000 250 PackMaterials-Page1 PACKAGEMATERIALSINFORMATION 2-Feb-2012 *Alldimensionsarenominal Device UCC27210DPRR UCC27210DPRT UCC27210DR UCC27210DRMR UCC27211DPRR UCC27211DPRT UCC27211DR UCC27211DRMR UCC27211DRMT PackageType WSON WSON SOIC VSON WSON WSON SOIC VSON VSON PackageDrawing DPR DPR D DRM DPR DPR D DRM DRM Pins 10 10 8 8 10 10 8 8 8 SPQ 3000 250 2500 3000 3000 250 2500 3000 250 Length(mm) 346.0 210.0 346.0 346.0 346.0 210.0 346.0 346.0 210.0 Width(mm) 346.0 185.0 346.0 346.0 346.0 185.0 346.0 346.0 185.0 Height(mm) 29.0 35.0 29.0 29.0 29.0 35.0 29.0 29.0 35.0 PackMaterials-Page2 IMPORTANTNOTICE TexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,modifications,enhancements,improvements, andotherchangestoitsproductsandseersshould obtainthelatestrelevantinformationbeforeplacductsare soldsubjecttoTI’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment. TIwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithTI’sstandard gandotherqualitycontroltewhere mandatedbygovernmentrequirements,testingofallparametersofeachproductisnotnecessarilyperformed. TIassersareresponsiblefortheirproductsand mizetherisksassociatedwithcustomerproductsandapplications,customersshouldprovide adequatedesignandoperatingsafeguards. TIdoesnotwarrantorrepresentthatanylicense,eitherexpressorimplied,isgrantedunderanyTIpatentright,copyright,maskworkright, orotherTIintellectualpropertyrightrelatingtoanycombination,machine,ation publishedbyTIregardingthird-partyproductsorservicesdoesnotconstitutealicensefromTItousesuchproductsorservicesora uchinformationmayrequirealicensefromathirdpartyunderthepatentsorotherintellectual propertyofthethirdparty,oralicensefromTIunderthepatentsorotherintellectualpropertyofTI. 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FollowingareURLswhereyoucanobtaininformationonotherTexasInstrumentsproductsandapplicationsolutions: Products Audio Amplifiers DataConverters DLP®Products DSP ClocksandTimers Interface Logic PowerMgmt Microcontrollers RFID OMAPMobileProcessors WirelessConnectivity /audio /clocks /omap /wirelessconnectivity Applications /automotive /communications ComputersandPeripherals ConsumerElectronics EnergyandLighting Industrial Medical Security Space,AvionicsandDefense VideoandImaging /computers /consumer-apps /energy /industrial /medical /security /space-avionics-defense /video MailingAddress:TexasInstruments,PostOfficeBox655303,Dallas,Texas75265 Copyright©2012,TexasInstrumentsIncorporated
2024年6月10日发(作者：义秀越)
UCC27210
UCC27211
SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012
120-VBoot,4-APeak,HighFrequencyHigh-Side/Low-SideDriver
CheckforSamples:UCC27210,UCC27211
FEATURES
•DrivesTwoN-ChannelMOSFETsin
High-Side/Low-SideConfigurationwith
IndependentInputs
MaximumBootVoltage120-VDC
4-ASink,4-ASourceOutputCurrents
0.9-ΩPull-Up/Pull-DownResistance
InputPinscanTolerate-10Vto20Vandare
IndependentofSupplyVoltageRange
TTLorPseudo-CMOSCompatibleInput
Versions
8-Vto17-VVDDOperatingRange,(20VABS
MAX)
7.2-nsRiseand5.5-nsFallTimewith1000-pF
Load
FastPropagationDelayTimes(18nstypical)
2-nsDelayMatching
SymmetricalUnderVoltageLockoutfor
High-SideandLow-SideDriver
AllIndustryStandardPackagesAvailable
(SOIC-8,PowerPAD™SOIC-8,4-mmx4-mm
SON-8and4-mmx4-mmSON-10)
Specifiedfrom-40to140°C
APPLICATIONS
•
•
•
•
•
•
•
PowerSuppliesforTelecom,Datacom,and
Merchant
Half-BridgeandFull-BridgeConverters
Push-PullConverters
HighVoltageSynchronous-BuckConverters
Two-SwitchForwardConverters
Active-ClampForwardConverters
Class-DAudioAmplifiers
•
•
•
•
•
•
•
•
•
•
•
DESCRIPTION
TheUCC27210andUCC27211Driversarebasedon
thepopularUCC27200andUCC27201MOSFET
drivers,butofferseveralsignificantperformance
tputpull-upandpull-down
currenthasbeenincreasedto4-Asource/4-Asink,
andpull-up/pull-downresistancehavebeenreduced
to0.9Ω,therebyallowingfordrivinglargepower
MOSFETswithminimizedswitchinglossesduringthe
transitionthroughtheMOSFET’
inputstructureisnowabletodirectlyhandle-10
VDC,whichincreasesrobustnessandalsoallows
directinterfacetogate-drivetransformerswithout
utsarealso
independentofsupplyvoltageandhavea20-V
maximumrating.
•
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas
Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PowerPADisatrademarkofTexasInstruments.
Copyright©2011–2012,TexasInstrumentsIncorporated
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexas
tionprocessingdoesnot
necessarilyincludetestingofallparameters.
UCC27210
UCC27211
SLUSAT7B–NOVEMBER2011–
dsshouldbeshortedtogetherorthedeviceplacedinconductivefoam
duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
DESCRIPTION(CONT.)
TheUCC27210/1’sswitchingnode(HSpin)isabletohandle-18Vmaximumwhichallowsthehigh-sidechannel
tobeprotectedfrominher
UCC27210(Pseudo-CMOSinputs)andUCC27211(TTLinputs)haveincreasedhysteresisallowingforinterface
toanalogordigitalPWMcontrollerswithenhancednoiseimmunity.
Thelow-sideandhigh-sidegatedriversareindependentlycontrolledandmatchedto2nsbetweentheturnon
andturnoffofeachother.
Anon--voltagelockoutis
providedforboththehigh-sideandthelow-sidedriversprovidingsymmetricturn-on/turn-offbehaviorandforcing
theoutputslowifthedrivevoltageisbelowthespecifiedthreshold.
Bothdevicesareofferedin8-pinSOIC(D),PowerPAD™SOIC-8(DDA),4-mmx4-mmSON-8(DRM)and
SON-10(DPR)packages.
TypicalApplicationDiagrams
+12V
+100V
+12V
V
DD
HB
SECONDARY
SIDE
CIRCUIT
V
DD
HB
+100V
SECONDARY
SIDE
CIRCUIT
C
O
N
T
R
O
L
PWM
CONTROLLER
LI
HS
PWM
CONTROLLER
LI
C
O
N
T
R
O
L
HI
DRIVE
HI
HO
HI
DRIVE
HI
HO
HS
DRIVE
LO
UCC27210
VSS
LO
DRIVE
LO
UCC27211
VSS
LO
ISOLATION
AND
FEEDBACK
+12V
VDD
HB
+100V
HI
C
O
N
T
R
O
L
DRIVE
HI
HO
HS
LI
DRIVE
LO
UCC27211
LO
ORDERINGINFORMATION
TEMPERATURERANGET
A
=T
J
INPUT
COMPATIBILITY
PseudoCMOS
TTL
SOIC-8(D)
(2)
UCC27210D
UCC27211D
(1)
PACKAGEDDEVICES
(1)
PowerPAD™
SOIC-8(DDA)
(2)
UCC27210DDA
UCC27211DDA
SON-8(DRM)
(3)
UCC27210DRM
UCC27211DRM
SON-10(DPR)
(4)
UCC27210DPR
UCC27211DPR
-40°Cto140°C
(1)
(2)
(3)
(4)
TheseproductsarepackagedinLead(Pb)-FreeandgreenleadfinishofPdNiAuwhichiscompatiblewithMSLlevel1at255°Cto
260°CpeakreflowtemperaturetobecompatiblewitheitherleadfreeorSn/Pbsolderingoperations.
D(SOIC-8)andDDA(PowerPad™SOIC-8)
UCC27210ADR/UCC27211ADR)toorderquantitiesof2,500devicesperreel.
DRM(SON-8)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADRMT/UCC27211ADRMT,orlargerreels
of3000piecesaspartnumberUCC27210ADRMR/UCC27211ADRMR.
DPR(SON-10)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADPRT/UCC27211ADPRT,orlargereels
of3000piecesaspartnumberUCC27210ADPRR/UCC27211ADPRR.
2SubmitDocumentationFeedback
Copyright©2011–2012,TexasInstrumentsIncorporated
ProductFolderLink(s):UCC27210UCC27211
UCC27210
UCC27211
SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012
ABSOLUTEMAXIMUMRATINGS
overoperatingfree-airtemperaturerange(unlessotherwisenoted)
MIN
Supplyvoltagerange,V
DD
(1)
,V
HB
-V
HS
InputvoltagesonLIandHI,V
LI
,V
HI
OutputvoltageonLO,V
LO
OutputvoltageonHO,V
HO
VoltageonHS,V
HS
VoltageonHB,V
HB
HumanBodyModel(HBM)
ESD
FieldInducedChargedDeviceModel
(FICDM)
-40
-65
DC
Repetitivepulse<100ns
(2)
DC
Repetitivepulse<100ns
(2)
DC
Repetitivepulse<100ns
(2)
MAX
-0.3
-10
-0.3
-2
20
20
V
DD
+0.3
V
DD
+0.3
V
HB
+0.3
V
HB
+0.3
115
115
120
2
1
150
150
300
UNIT
V
HS
–0.3
V
HS
-2
-1
-18
-0.3
V
kV
Operatingvirtualjunctiontemperaturerange,T
J
Storagetemperature,T
STG
Leadtemperature(soldering,10sec.)
(1)
(2)
°C
tsarepositiveinto,negativeoutofthespecifiedterminal.
Verifiedatbenchcharacterization.
RECOMMENDEDOPERATINGCONDITIONS
allvoltagesarewithrespecttoV
SS
;currentsarepositiveintoandnegativeoutofthespecifiedterminal.–40°C J =T A < 140°C(unlessotherwisenoted) PARAMETER Supplyvoltagerange,V DD ,V HB -V HS VoltageonHS,V HS VoltageonHS,V HS (repetitivepulse<100ns) VoltageonHB,V HB VoltageslewrateonHS Operatingjunctiontemperaturerange-40 MIN 8 -1 -15 V HS +8, V DD –1 TYP 12 MAX 17 105 110 V HS +17, 115 50 140 V/ns °C V UNIT Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback3 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– THERMALINFORMATION UCC27210/11 (1) THERMALMETRIC θ JA θ JCtop θ JB ψ JT ψ JB θ JCbot (1) (2) (3) (4) (5) (6) (7) Junction-to-ambientthermalresistance (2) Junction-to-case(top)thermalresistance (3) Junction-to-boardthermalresistance (4) Junction-to-topcharacterizationparameter (5) Junction-to-boardcharacterizationparameter (6) Junction-to-case(bottom)thermalresistance (7) D 8PINS 111.8 56.9 53.0 7.8 52.3 n/a DDA 8PINS 37.7 47.2 9.6 2.8 9.4 3.6 °C/W UNITS Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953. Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,as specifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a. Thejunction-to-case(top)thermific JEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. Thejunction-to-boardthermalresistanceisobtainedbysimulatinginanenvironmentwitharingcoldplatefixturetocontrolthePCB temperature,asdescribedinJESD51-8. Thejunction-to-topcharacterizationparameter,ψ JT ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-boardcharacterizationparameter,ψ JB ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-case(bottom)thermalresistanceisobtainedbysimulatingacoldplatetestontheexposed(power)ific JEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. THERMALINFORMATION UCC27210/11 (1) THERMALMETRIC θ JA θ JCtop θ JB ψ JT ψ JB θ JCbot (1) (2) (3) (4) (5) (6) (7) Junction-to-ambientthermalresistance (2) Junction-to-case(top)thermalresistance (3) Junction-to-boardthermalresistance (4) Junction-to-topcharacterizationparameter (5) Junction-to-boardcharacterizationparameter (6) Junction-to-case(bottom)thermalresistance (7) DRM 8PINS 33.9 33.2 11.4 0.4 11.7 2.3 DPR 10PINS 36.8 36.0 14.0 0.3 14.2 3.4 °C/W UNITS Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953. Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,as specifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a. Thejunction-to-case(top)thermific JEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. Thejunction-to-boardthermalresistanceisobtainedbysimulatinginanenvironmentwitharingcoldplatefixturetocontrolthePCB temperature,asdescribedinJESD51-8. Thejunction-to-topcharacterizationparameter,ψ JT ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-boardcharacterizationparameter,ψ JB ,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted fromthesimulationdataforobtainingθ JA ,usingaproceduredescribedinJESD51-2a(sections6and7). Thejunction-to-case(bottom)thermalresistanceisobtainedbysimulatingacoldplatetestontheexposed(power)ific JEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88. 4SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 ELECTRICALCHARACTERISTICS V DD =V HB =12V,V HS =V SS =0V,noloadonLOorHO,T A =T J =-40°Cto140°C,(unlessotherwisenoted) PARAMETER SupplyCurrents I DD I DDO I HB I HBO I HBS I HBSO Input V HIT V LIT V IHYS R IN V HIT V LIT V IHYS R IN V DDR V DDHYS V HBR V HBHYS V F V FI R D V LOL V LOH Inputvoltagethreshold Inputvoltagethreshold Inputvoltagehysteresis Inputpulldownresistance Inputvoltagethreshold Inputvoltagethreshold Inputvoltagehysteresis Inputpulldownresistance V DD turn-onthreshold Hysteresis V HB turn-onthreshold Hysteresis Low-currentforwardvoltage High-currentforwardvoltage Dynamicresistance,ΔVF/ΔI Low-leveloutputvoltage Highleveloutputvoltage Peakpull-upcurrent (1) Peakpull-downcurrent HOGATEDriver V HOL V HOH Low-leveloutputvoltage High-leveloutputvoltage Peakpull-upcurrent (1) Peakpull-downcurrent (1) (1)Ensuredbydesign. I HO =100mA I HO =-100mA,V HOH =V HB -V HO V HO =0V V HO =12V 0.05 0.1 0.09 0.16 3.7 4.5 0.15 0.27 V A (1) TESTCONDITION V(LI)=V(HI)=0V UCC27210 UCC27211 f=500kHz,C LOAD =0 V(LI)=V(HI)=0V f=500kHz,C LOAD =0 V(HS)=V(HB)=115V f=500kHz,C LOAD =0 MIN 0.05 2.4 2.4 0.015 1.5 TYP 0.085 2.6 2.5 0.065 2.5 0.0005 0.07 MAX 0.17 4.3 4.3 0.1 4 0.13 0.9 5.8 4.0 UNITS V DD quiescentcurrent V DD operatingcurrent mA Bootvoltagequiescentcurrent Bootvoltageoperatingcurrent HBtoV SS quiescentcurrent HBtoV SS operatingcurrent µA mA 4.2 UCC27210 2.4 5.0 3.2 1.8 102 V kΩ 1.9 UCC27211 1.3 2.3 1.6 700 68 2.7 1.9 V mV kΩ Under-VoltageLockout(UVLO) 6.2 5.6 7.0 0.5 6.7 1.1 I VDD-HB =100µA I VDD-HB =100mA I VDD-HB =100mAand80mA I LO =100mA I LO =-100mA,V LOH =V DD -V LO V LO =0V V LO =12V 0.3 0.05 0.1 0.65 0.85 0.5 0.09 0.16 3.7 4.5 0.8 0.95 0.85 0.15 0.27 7.9 7.8 V BootstrapDiode V Ω LOGateDriver V A Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback5 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– ELECTRICALCHARACTERISTICS(continued) V DD =V HB =12V,V HS =V SS =0V,noloadonLOorHO,T A =T J =-40°Cto140°C,(unlessotherwisenoted) PARAMETER SwitchingParameters:PropagationDelays T DLFF T DHFF T DLRR T DHRR T DLFF T DHFF T DLRR T DHRR V LI fallingtoV LO falling V HI fallingtoV HO falling V LI risingtoV LO rising V HI risingtoV HO rising V LI fallingtoV LO falling V HI fallingtoV HO falling V LI risingtoV LO rising V HI risingtoV HO rising T J =25°C UCC27210 T MOFF T MON T MOFF FromLOOFFtoHOON FromHOOFFtoLOON UCC27211 FromLOOFFtoHOON T J =–40°Cto140°C T J =25°C T J =–40°Cto140°C T J =25°C T J =–40°Cto140°C T J =25°C T J =–40°Cto140°C UCC27211,C LOAD =0 UCC27210,C LOAD =0 17 17 18 18 10 10 10 10 21 21 24 24 17 17 18 18 3 3 3 3 2 2 2 2 7.2 7.2 5.5 5.5 0.36 0.15 0.6 0.4 µs ns 37 37 46 46 30 30 40 40 11 14 11 14 9.5 14 9.5 14 ns TESTCONDITIONMINTYPMAXUNITS SwitchingParameters:DelayMatching T MON FromHOOFFtoLOONns ns ns ns SwitchingParameters:OutputRiseandFallTime t R t R t F t F t R t F LOrisetime HOrisetime LOfalltime HOfalltime LO,HO LO,HO Minimuminputpulsewidththatchangesthe output Bootstrapdiodeturn-offtime (2) (3) (4) (2)(3) C LOAD =1000pF,from10%to90% C LOAD =1000pF,from90%to10% C LOAD =0.1µF,(3Vto9V) C LOAD =0.1µF,(9Vto3V) SwitchingParameters:Miscellaneous 50 I F =20mA,I REV =0.5A (4) ns 20 Ensuredbydesign. I F :Forwardcurrentappliedtobootstrapdiode,I REV :Reversecurrentappliedtobootstrapdiode. TypicalvaluesforT A =25°C. 6SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TimingDiagrams LI Input (HI,LI) T DLRR ,T DHRR HI LO Output (HO,LO) T DLFF ,T DHFF HO T MON T MOFF Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback7 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– DEVICEINFORMATION FunctionalBlockDiagram 2 UVLO LEVEL SHIFT 5 3 HB HO HS 4 HI V DD 1 UVLO 8 LO V SS LI 67 SOIC-8(D) TOPVIEW PowerPad TM SOIC-8(DDA) TOPVIEW VDD 18 LO VDD 1 Exposed Thermal DiePad 8LO HB 27 VSS HB 27 VSS HO 36 LI HO 36LI HS 45 HI HS 45HI SON-8(DRM) TOPVIEW VDD 1 Exposed Thermal DiePad* 8 LO VDD HB 1 SON-10 (DPR) TOPVIEW 10 LO VSS LI HI NC HB 2 2 9 7 VSS HO 3 8 HO 36LI HS 4 7 HS 45HI NC 5 6 8SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TERMINALFUNCTIONS PINNAME VDD PIN D/DDA/DRM 1 DPR 1 DESCRIPTION -couplethispintoV SS (GND).Typical decouplingcapacitorrangeis0.22µFto1.0µF. tstrapdiodeison-chipbuttheexternalbootstrap tpositivesideofthebootstrapcapacitortothispin. TypicalrangeofHBbypasscapacitoris0.022µFto0.1µacitorvalueis dependantonthegatechargeofthehigh-sideMOSFETandshouldalsobeselected basedonspeedandripplecriteria ttothegateofthehigh-sidepowerMOSFET. ttosourceofhigh-sidepowerMOSFET. Connectthenegativesideofbootstrapcapacitortothispin. High-sideinput. Low-sideinput. Negativesupplyterminalforthedevicewhichisgenerallygrounded. ttothegateofthelow-sidepowerMOSFET. NotConnected. UtilizedontheDDA,icallyreferencedtoV SS (GND).ConnecttoalargethermalmasstraceorGNDplanetodramaticallyimprove thermalperformance. HB22 HO HS HI LI VSS LO N/C PowerPAD™ (1) (1) 3 4 5 6 7 8 - Pad 3 4 7 8 9 10 5/6 Pad ThePowerPAD™ritiselectricallyandthermallyconnectedtothe substratewhichisthegroundofthedevice. Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback9 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– TYPICALCHARACTERISTICS QUIESCENTCURRENT vs SUPPLYVOLTAGE 100 I D D , I H B − Q u i e s c e n t C u r r e n t ( µ A ) T = 25°C 80 I D D O − O p e r a t i n g C u r r e n t ( m A ) 10 100 UCC27210, V DD = 12V UCC27210IDDOPERATINGCURRENT vs FREQUENCY 60 1 C L =0pF, T=−40°C C L =0pF, T=25°C C L =0pF, T=140°C C L =1000pF, T=25°C C L =1000pF, T=140°C C L =4700pF, T=140°C 10100 Frequency (kHz) 1000 G002 40 20 UCC27210/1 I DD UCC27210/1 I HB 0 6 V DD = V HB − Supply Voltage (V) 1820 G001 0.1 0.01 Figure1. UCC27211IDDOPERATINGCURRENT vs FREQUENCY 100 UCC27211, V DD = 12V I D D O − O p e r a t i n g C u r r e n t ( m A ) 10 I H B O − O p e r a t i n g C u r r e n t ( m A ) 10 100 Figure2. BOOTVOLTAGEOPERATINGCURRENT vs FREQUENCY(HBtoHS) UCC27210/1, V HB − V HS = 12V 1 C L =0pF, T=−40°C C L =0pF, T=25°C C L =0pF, T=140°C C L =1000pF, T=25°C C L =1000pF, T=140°C C L =4700pF, T=140°C 10100 Frequency (kHz) 1000 G003 1 C L =0pF, T=−40°C C L =0pF, T=25°C C L =0pF, T=140°C C L =1000pF, T=25°C C L =1000pF, T=140°C C L =4700pF, T=140°C 10100 Frequency (kHz) 1000 G004 0.10.1 0.010.01 Figure3. UCC27210/11INPUTTHRESHOLD vs SUPPLYVOLTAGE 6 H I , L I − I n p u t T h r e s h o l d V o l t a g e ( V ) 5 4 3 2 1 0 −1 8 UCC27210, Rising UCC27210, Falling UCC27211, Rising UCC27211, Falling 1216 V DD − Supply Voltage (V) 20 G005 Figure4. UCC27210/11INPUTTHRESHOLDS vs TEMPERATURE 6 H I , L I − I n p u t T h r e s h o l d V o l t a g e ( V ) V DD = 12V 5 4 3 2 1 0 −1 −40−200 UCC27210, Rising UCC27210, Falling UCC27211, Rising UCC27211, Falling 20406080 Temperature (°C) 100120140 G006 T = 25°C 6. 10SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TYPICALCHARACTERISTICS(continued) LOANDHOHIGHLEVELOUTPUTVOLTAGE vs TEMPERATURE 0.32 V O H − L O / H O O u t p u t V o l t a g e ( V ) 0.28 0.24 0.2 0.16 0.12 0.08 0.04 0 −40−200 UCC27210/1, V DD =V HB =8V UCC27210/1, V DD =V HB =12V UCC27210/1, V DD =V HB =16V UCC27210/1, V DD =V HB =20V 20406080 Temperature (°C) 100120140 G007 LOANDHOLOWLEVELOUTPUTVOLTAGE vs TEMPERATURE 0.2 V O L − L O / H O O u t p u t V o l t a g e ( V ) I HO =I LO = 100mA 0.16 I HO =I LO = 100mA 0.12 0.08 UCC27210/1, V DD =V HB =8V UCC27210/1, V DD =V HB =12V UCC27210/1, V DD =V HB =16V UCC27210/1, V DD =V HB =20V −2 Temperature (°C) 100120140 G008 0.04 0 −40 Figure7. UNDERVOLTAGELOCKOUTTHRESHOLD vs TEMPERATURE 8 7.6 7.2 H y s t e r e s i s ( V ) T h r e s h o l d ( V ) 6.8 6.4 6 5.6 5.2 −40−200 0.3 VDD Rising Threshold HB Rising Threshold 20406080 Temperature (°C) 100120140 G009 Figure8. UNDERVOLTAGELOCKOUTTHRESHOLDHYSTERESIS vs TEMPERATURE 1.5 1.2 0.9 0.6 VDD UVLO Hysteresis HB UVLO Hysteresis 0 −40−2 Temperature (°C) 100120140 G010 Figure9. UCC27210PROPAGATIONDELAYS vs TEMPERATURE 40 36 P r o p a g a t i o n D e l a y ( n s ) 32 28 24 20 16 12 8 4 0 −40−2 Temperature (°C) 100 TDLRR TDLFF TDHRR TDHFF 120140 G011 Figure10. UCC27211PROPAGATIONDELAYS vs TEMPERATURE 32 UCC27211, V DD =V HB =12V P r o p a g a t i o n D e l a y ( n s ) 24 UCC27210, V DD =V HB =12V 16 8 TDLRR TDLFF TDHRR TDHFF −2 Temperature (°C) 100120140 G012 0 −40 12. Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback11 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– TYPICALCHARACTERISTICS(continued) UCC27210PROPAGATIONDELAYS vs SUPPLYVOLTAGE 32 28 P r o p a g a t i o n D e l a y ( n s ) 24 20 16 12 8 4 0 81216 V DD =V HB − Supply Voltage (V) TDLRR TDLFF TDHRR TDHFF 20 G012 UCC27211PROPAGATIONDELAYS vs SUPPLYVOLTAGE 32 28 P r o p a g a t i o n D e l a y ( n s ) 24 20 16 12 8 4 0 81216 V DD =V HB − Supply Voltage (V) TDLRR TDLFF TDHRR TDHFF 20 G014 UCC27210, T=25°CUCC27211, T=25°C Figure13. DELAYMATCHING vs TEMPERATURE 10 V DD =V HB =12V I L O , I H O − O u t p u t C u r r e n t ( A ) 8 D e l a y M a t c h i n g ( n s ) 6 4 2 0 −2 −40 UCC27210, TMon UCC27210, TMoff UCC27211, TMon UCC27211, TMoff −2 Temperature (°C) 100120140 G015 Figure14. OUTPUTCURRENT vs OUTPUTVOLTAGE 5 V DD =V HB =12V 4 3 2 1 Pull Down Current Pull Up Current 02468 V LO , V HO − Output Voltage (V) 1012 G016 0 16. 12SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 TYPICALCHARACTERISTICS(continued) DIODECURRENT vs DIODEVOLTAGE 100 NEGATIVE10-VINPUT 10 D i o d e C u r r e n t ( m A ) 1 0.1 0.01 0.001 500750 Diode Voltage (mV) 800850 G017 Figure17. STEPINPUT Figure18. SYMMETRICALUVLO 20. Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback13 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– APPLICATIONINFORMATION FunctionalDescription TheUCC27210/11representTexasInstruments’latestgenerationofhighvoltagegatedriverswhichare designedtodriveboththehigh-sideandlow-sideofN-ChannelMOSFETsinahalf-/full-bridgeorsynchronous ating allowsforN-ChannelMOSFETcontrolinhalf-bridge,full-bridge,pushpull,two-switchforwardandactiveclamp forwardconverters. TheUCC27210/11feature4-Asource/sinkcapability,industrybest-in-classswitchingcharacteristicsandahost eaturescombinetoensureefficient,robustandreliable operationinhigh-frequencyswitchingpowercircuits. 27210/11Highlights FEATURE 4-Asourceandsinkcurrentwith0.9-Ωoutputresistance Inputpins(HIandLI)candirectlyhandle-10VDCupto20VDC 120-Vinternalbootdiode Switchnode(HSpin)abletohandle-18Vmaximumfor100ns RobustESDcircuitrytohandlevoltagespikes 18-nspropagationdelaywith7.2-ns/5.5-nsrise/fallTimes 2-ns(typ)delaymatchingbetweenchannels SymmetricalUVLOcircuit CMOSoptimizedthresholdorTTLoptimizedthresholdswith increasedhysteresis BENEFIT HighpeakcurrentidealfordrivinglargepowerMOSFETswith minimalpowerloss(fast-drivecapabilityatMillerplateau) Increasedrobustnessandabilitytohandleunder/ interfacedirectlytogate-drivetransformerswithouthavingtouse rectificationdiodes Providesvoltagemargintomeettelecom100-Vsurgerequirements Allowsthehigh-sidechanneltohaveextraprotectionfrominherent negativevoltagescausedparasiticinductanceandstray capacitance. ExcellentimmunitytolargedV/dTconditions Best-in-classswitchingcharacteristicsandextremelylow-pulse transmissiondistortion Avoidstransformervolt-secondoffsetinbridge Ensureshigh-sideandlow-sideshutdownatthesametime sed hysteresisoffersaddednoiseimmunity InUCC27210/11,thehighsideandlowsideeachhaveindependentinputswhichallowmaximumflexibilityof tdiodeforthehigh-sidedriverbiassupplyisinternaltothe 27210isthePseudo-CMOScompatibleinputversionandtheUCC27211 h-sidedriverisreferencedtotheswitchnode(HS)whichis typicall-sidedriveris referencedtoV SS ctionscontainedaretheinputstages,UVLOprotection,level shift,bootdiode,andoutputdriverstages. 14SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 InputStages utimpedanceoftheUCC27210is100 kΩ100kΩisapull-downresistancetoV SS (ground). TheUCC27210Pseudo-CMOSinputstructurehasbeendesignedtoprovidelargehysteresisandatthesame timCMOSdesigns,theinput gso,thehigh-levelinputthresholdcanbecome 27210recognizesthefactthatVDDlevelsaretrendingdownward anditthereforeprovidesarisingthresholdwith5.0V(typ)andfallingthresholdwith3.2V(typ).Theinput hysteresisoftheUCC27210is1.8V(typ). TheinputstagesoftheUCC27211haveimpedanceof70kΩnominalandinputcapacitanceisapproximately2 -downresistancetoV SS (ground)is70kΩ.Thelogiclevelcompatibleinputprovidesarisingthresholdof 2.3Vandafallingthresholdof1.6V. UnderVoltageLockout(UVLO) Thebiassuppliesforthehigh-sideandlow-sidedrivershaveUVLOprotection.V DD aswellasV HB toV HS DD UVLOdisablesbothdriverswhenV DD isbelowthespecified ingV DD UVLOdisablesonlythehigh-side driverwhentheV HB toV HS HB UVLOrisingthresholdis 6.7Vwith1.1-Vhysteresis. LevelShift Thelevelshiftcircuitistheinterfacefromthehigh-sideinputtothehigh-sidedriverstagewhichisreferencedto theswitchnode(HS).ThelevelshiftallowscontroloftheHOoutputreferencedtotheHSpinandprovides excellentdelaymatchingwiththelow-sidedriver. BootDiode Thebootdiodenecessarytogeneratethehigh-sidebiasisincludedintheUCC27210/ diodeanodeisconnectedtoV DD andcathodeconnectedtoV HB .WiththeV HB capacitorconnectedtoHBandthe HSpins,theV HB capacitt diodeprovidesfastrecoverytimes,lowdioderesistance,andvoltageratingmargintoallowforefficientand reliableoperation. OutputStages ewrate,lowresistanceand highpeakcurrentcapabilit low-sideoutputstageisreferencedfromV DD toV SS andthehighsideisreferencedfromV HB toV HS . Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback15 ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SLUSAT7B–NOVEMBER2011– LayoutRecommendations To • • • • • • • improvetheswitchingcharacteristicsandefficiencyofadesign,thefollowinglayoutrulesshouldbefollowed. LocatethedriverascloseaspossibletotheMOSFETs. LocatetheV DD andV HB (bootstrap)capacitorsascloseaspossibletothedriver. thermalpadoftheDDAandDRMpackageasGNDby connectingittotheVSSpin(GND).TheGNDtracefromthedrivergoesdirectlytothesourceofthe MOSFETbutshouldnotbeinthehighcurrentpathoftheMOSFET(S)drainorsourcecurrent. UsesimilarrulesfortheHSnodeasforGNDforthehigh-sidedriver. UsewidetracesforLOandHOcloselyfollowingtheassociatedGNDorHStraces.60to100-milswidthis preferablewherepossible. UseasleasttwoormoreviasifthedriveroutputsorSWnodeneedstoberoutedfromonelayertoanother. ForGNDthenumberofviasneedstobeaconsiderationofthethermalpadrequirementsaswellasparasitic inductance. AvoidLIandHI(driverinput)goingclosetotheHSnodeoranyotherhighdV/dTtracesthatcaninduce significantnoiseintotherelativelyhighimpedanceleads. KeepinmindthatapoorlayoutcancauseasignificantdropinefficiencyversusagoodPCBlayoutandcan evenleadtodecreasedreliabilityofthewholesystem. ExampleComponentPlacement 27210/11ComponentPlacement AdditionalReferences •AdditionallayoutguidelinesforPCBlandpatternsmaybefoundin,QFN/SONPCBAttachment,Application Brief(TexasInstrument'sLiteratureNumberSLUA271) •Additionalthermalperformanceguidelinesmaybefoundin,PowerPAD™ThermallyEnhancedPackage ApplicationReport,ApplicationReport(TexasInstrument'sLiteratureNumberSLMA002A) •Additionalthermalperformanceguidelinesmaybefoundin,PowerPAD™MadeEasy,ApplicationReport (TexasInstrument'sLiteratureNumberSLMA004) 16SubmitDocumentationFeedback Copyright©2011–2012,TexasInstrumentsIncorporated ProductFolderLink(s):UCC27210UCC27211 UCC27210 UCC27211 SAT7B–NOVEMBER2011–REVISEDFEBRUARY2012 REVISIONHISTORY ChangesfromRevisionA(November,2011)toRevisionB • Page 2 Copyright©2011–2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback17 ProductFolderLink(s):UCC27210UCC27211 PACKAGE OPTION ADDENDUM 3-Feb-2012 PACKAGING INFORMATION Orderable Device UCC27210D UCC27210DDA UCC27210DDAR UCC27210DPRR UCC27210DPRT UCC27210DR UCC27210DRMR UCC27210DRMT UCC27211D UCC27211DDA UCC27211DDAR UCC27211DPRR UCC27211DPRT UCC27211DR UCC27211DRMR UCC27211DRMT (1) Status (1) Package TypePackage Drawing SOICD DDA DDA DPR DPR D DRM DRM D DDA DDA DPR DPR D DRM DRM Pins 8 8 8 10 10 8 8 8 8 8 8 10 10 8 8 8 Package Qty 75 75 2500 3000 250 2500 3000 250 75 75 2500 3000 250 2500 3000 250 Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) ACTIVEGreen (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) CU NIPDAULevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAUAGLevel-1-260C-UNLIM CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-2-260C-1 YEAR CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM CU NIPDAULevel-1-260C-UNLIM PREVIEWSO PowerPAD PREVIEWSO PowerPAD ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE WSON WSON SOIC VSON VSON SOIC PREVIEWSO PowerPAD PREVIEWSO PowerPAD ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE WSON WSON SOIC VSON VSON The marketing status values are defined as follows: Addendum-Page 1 PACKAGE OPTION ADDENDUM 3-Feb-2012 ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check /productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGEMATERIALSINFORMATION 2-Feb-2012 TAPEANDREELINFORMATION *Alldimensionsarenominal DevicePackagePackagePins TypeDrawing WSON WSON SOIC VSON WSON WSON SOIC VSON VSON DPR DPR D DRM DPR DPR D DRM DRM 10 10 8 8 10 10 8 8 8 SPQReelReelA0 DiameterWidth(mm) (mm)W1(mm) 330.0 180.0 330.0 330.0 330.0 180.0 330.0 330.0 180.0 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 4.25 4.25 6.4 4.25 4.25 4.25 6.4 4.25 4.25 B0 (mm) 4.25 4.25 5.2 4.25 4.25 4.25 5.2 4.25 4.25 K0 (mm) 1.15 1.15 2.1 1.15 1.15 1.15 2.1 1.15 1.15 P1 (mm) 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 WPin1 (mm)Quadrant 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 Q2 Q2 Q1 Q2 Q2 Q2 Q1 Q2 Q2 UCC27210DPRR UCC27210DPRT UCC27210DR UCC27210DRMR UCC27211DPRR UCC27211DPRT UCC27211DR UCC27211DRMR UCC27211DRMT 3000 250 2500 3000 3000 250 2500 3000 250 PackMaterials-Page1 PACKAGEMATERIALSINFORMATION 2-Feb-2012 *Alldimensionsarenominal Device UCC27210DPRR UCC27210DPRT UCC27210DR UCC27210DRMR UCC27211DPRR UCC27211DPRT UCC27211DR UCC27211DRMR UCC27211DRMT PackageType WSON WSON SOIC VSON WSON WSON SOIC VSON VSON PackageDrawing DPR DPR D DRM DPR DPR D DRM DRM Pins 10 10 8 8 10 10 8 8 8 SPQ 3000 250 2500 3000 3000 250 2500 3000 250 Length(mm) 346.0 210.0 346.0 346.0 346.0 210.0 346.0 346.0 210.0 Width(mm) 346.0 185.0 346.0 346.0 346.0 185.0 346.0 346.0 185.0 Height(mm) 29.0 35.0 29.0 29.0 29.0 35.0 29.0 29.0 35.0 PackMaterials-Page2 IMPORTANTNOTICE TexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,modifications,enhancements,improvements, andotherchangestoitsproductsandseersshould obtainthelatestrelevantinformationbeforeplacductsare soldsubjecttoTI’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment. TIwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithTI’sstandard gandotherqualitycontroltewhere mandatedbygovernmentrequirements,testingofallparametersofeachproductisnotnecessarilyperformed. TIassersareresponsiblefortheirproductsand mizetherisksassociatedwithcustomerproductsandapplications,customersshouldprovide adequatedesignandoperatingsafeguards. TIdoesnotwarrantorrepresentthatanylicense,eitherexpressorimplied,isgrantedunderanyTIpatentright,copyright,maskworkright, orotherTIintellectualpropertyrightrelatingtoanycombination,machine,ation publishedbyTIregardingthird-partyproductsorservicesdoesnotconstitutealicensefromTItousesuchproductsorservicesora uchinformationmayrequirealicensefromathirdpartyunderthepatentsorotherintellectual propertyofthethirdparty,oralicensefromTIunderthepatentsorotherintellectualpropertyofTI. 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TIproductsarenotauthorizedforuseinsafety-criticalapplications(suchaslifesupport)whereafailureoftheTIproductwouldreasonably beexpectedtocauseseverepersonalinjuryordeath,unlessofficersofthepartieshaveexecutedanagreementspecificallygoverning representthattheyhaveallnecessaryexpertiseinthesafetyandregulatoryramificationsoftheirapplications,and acknowledgeandagreethattheyaresolelyresponsibleforalllegal,regulatoryandsafety-relatedrequirementsconcerningtheirproducts andanyuseofTIproductsinsuchsafety-criticalapplications,notwithstandinganyapplications-relatedinformationorsupportthatmaybe r,BuyersmustfullyindemnifyTIanditsrepresentativesagainstanydamagesarisingoutoftheuseofTIproductsin suchsafety-criticalapplications. 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