2024年6月12日发(作者：公叔乐池)
元器件交易网
Quad DMOS Analog Switch Driver
CORPORATION
"Improved Performance Over
SD5000N and SD5400CY"
SD5300
FEATURESDESCRIPTION
The Calogic SD5300 is a monolithic array of 20V
enhancement-mode DMOS FET analog switch drivers. The
SD5300 is manufactured with implanted high-speed,
high-voltage and low resistance double-diffused MOS
(DMOS) process, and was designed to drive DMOS and other
analog switches. The devices are available in 16-pin plastic
DIP package and in a die form for hybrid applications.
Custom devices based on SD5300 can also be ordered.
ORDERING INFORMATION
Analog Switch Driver
Wide Band Dual Differential Amplifiers
Part
SD5300Y
SD5300N
XSD5300
Package
SOIC
Plastic DIP
Sorted Chips in Carriers
Temperature Range
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
•
Low Propagation Time. . . . . . . . . . . . . . . . . . . . . . . 1ns
•
Low On Resistance
•
Low Insertion Loss
•
Low Capacitance
•
•
•
•
–Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . 3.6pF typ.
–Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6pF typ.
–Feedback. . . . . . . . . . . . . . . . . . . . . . . . . . . . .6pF typ.
Low Crosstalk. . . . . . . . . . . . . . . . . . . . -107dB @ 4kHz
Input Transient Protection
APPLICATION
FUNCTIONAL BLOCK DIAGRAMDUAL IN LINE PACKAGE
PIN CONFIGURATION
SO PIN CONFIGURATION
G
1
TOP VIEW
S
1
TOP VIEW
16D
4
15
N/C
14
G
4
13
S
4
12
S
3
11
G
3
10
N/C
9
D
3
D
1
G
2
D
1
1
S
2
1
Body
2
14
S
1
13
NC
12
G
1
11
D
1
10
D
4
9
G
4
8
SUBSTRATE
2
G
1
S
2
3
4
5
6
D
2
G
3
S
1
S
2
G
2
G
2
3
D
2
4
D
3
5
G
3
6
S
3
7
N/C
7
S
3
D
3
G
4
D
2
8
S
4
D
4
S
4
SUBSTRATE
CD9
元器件交易网
SD5300
CORPORATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Breakdown Voltage
Drain-Source
Source-Drain
Drain-Substrate
Source-Substrate
Gate-Source
Gate-Substrate
Gate-Drain
Continuous Drain Current
SYMBOL
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
I
D
MAX. VALUE
20
20
25
25
25
25/-.3
25
50
UNITS
ABSOLUTE MAXIMUM
PARAMETER
Drain Current
V
Temperature Range
Operating
Storage
Power Dissipation
Package
Each Device
SYMBOL
I
D
T
J
T
S
P
D
P
D
MAX. VALUE
50
UNITS
mA
o
-55 to +85
-55 to +150
C
mA
640 (Note 1)
300 (Note 2)
mW
Notes:
1. Linear Derating Factor – 10.7mW/
o
C above 25
o
C
2. Linear Derating Factor – 5.0mW/
o
C above 25
o
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C, unless otherwise noted)
SYMBOL
BV
DS
BV
SB
I
GBS
V
GS(th)
PARAMETER
Drain-Source Breakdown Voltage
Source-Substrate Breakdown
Voltage
Gate-Body Leakage Current
Gate-Source Threshold Voltage0.5
40
r
DS(on)
Drain-Source ON Resistance
22
17
15
g
fs
c
(ga+gd+gb)
c
(gd+db)
c
(gs+sb)
c
(dg)
C
T
Common-Source Forward
Transconductance
Gate Node Capacitance
Drain Node Capacitance
Source Node Capacitance
Reverse Transfer Capacitance
Cross Talk
1012
2.4
1.3
3.5
0.3
-107
3.7
1.7
4.5
.7
dB
pFf = 1MHz, V
DS
= 10V, V
GS
= V
BS
= -15V
MIN
20
20
TYP
25
V
25
1.0
2.0
45
25
20
17
mmhos
ohms
µA
V
I
S
= 10µA, V
GS
= 0, Drain Open
V
GB
= 25V, V
DB
= V
SB
= 0
V
DS
= V
GS
, I
D
= 1.0µA, V
SB
= 0
V
GS
= 5V, I
D
= 1mA, V
SB
= 0
V
GS
= 10V, I
D
= 1mA, V
SB
= 0
V
GS
= 15V, I
D
= 1mA, V
SB
= 0
V
GS
= 20V, I
D
= 1mA, V
SB
= 0
V
DS
= 10V, I
D
= 20mA, f = 1KHz, V
SB
= 0
MAXUNITSCONDITIONS
I
D
= 10µA, V
GS
= V
BS
= 0
元器件交易网
SD5300
CORPORATION
SWITCHING CHARACTERISTICS
SYMBOL
t
d(on)
t
r
t
off *
PARAMETER
Turn-on Time
Rise Time
Turn-off Time
MINTYP
0.7
0.8
10.0
MAX
1.5
1.5
ns
UNITSCONDITIONS
R
L
= 680Ω, R
G
= 51
V
DD
= 5V
V
G(on)
= 10V
* t
off
is dependent on R
L
and C and does not depend on the device characteristics.
TEST CIRCUIT
TO
SCOPE
51Ω
+V
DD
SWITCHING WAVEFORM
+5V
R
L
V
OUT
TO SCOPE
90%
50%
10%
V
IN
OV
V
IN
T
d
(ON)
+V
DD
V
OUT
OV
Input Pulset
r
,t
p
<1nec
Rep rate = 1MHz
Sampling Scopet
r
<350psec
RIN = 1MΩ
CIN = 2pF
90%
50%
10%
t
r
10%
90%
t
OFF
2024年6月12日发(作者：公叔乐池)
元器件交易网
Quad DMOS Analog Switch Driver
CORPORATION
"Improved Performance Over
SD5000N and SD5400CY"
SD5300
FEATURESDESCRIPTION
The Calogic SD5300 is a monolithic array of 20V
enhancement-mode DMOS FET analog switch drivers. The
SD5300 is manufactured with implanted high-speed,
high-voltage and low resistance double-diffused MOS
(DMOS) process, and was designed to drive DMOS and other
analog switches. The devices are available in 16-pin plastic
DIP package and in a die form for hybrid applications.
Custom devices based on SD5300 can also be ordered.
ORDERING INFORMATION
Analog Switch Driver
Wide Band Dual Differential Amplifiers
Part
SD5300Y
SD5300N
XSD5300
Package
SOIC
Plastic DIP
Sorted Chips in Carriers
Temperature Range
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
•
Low Propagation Time. . . . . . . . . . . . . . . . . . . . . . . 1ns
•
Low On Resistance
•
Low Insertion Loss
•
Low Capacitance
•
•
•
•
–Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . 3.6pF typ.
–Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6pF typ.
–Feedback. . . . . . . . . . . . . . . . . . . . . . . . . . . . .6pF typ.
Low Crosstalk. . . . . . . . . . . . . . . . . . . . -107dB @ 4kHz
Input Transient Protection
APPLICATION
FUNCTIONAL BLOCK DIAGRAMDUAL IN LINE PACKAGE
PIN CONFIGURATION
SO PIN CONFIGURATION
G
1
TOP VIEW
S
1
TOP VIEW
16D
4
15
N/C
14
G
4
13
S
4
12
S
3
11
G
3
10
N/C
9
D
3
D
1
G
2
D
1
1
S
2
1
Body
2
14
S
1
13
NC
12
G
1
11
D
1
10
D
4
9
G
4
8
SUBSTRATE
2
G
1
S
2
3
4
5
6
D
2
G
3
S
1
S
2
G
2
G
2
3
D
2
4
D
3
5
G
3
6
S
3
7
N/C
7
S
3
D
3
G
4
D
2
8
S
4
D
4
S
4
SUBSTRATE
CD9
元器件交易网
SD5300
CORPORATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Breakdown Voltage
Drain-Source
Source-Drain
Drain-Substrate
Source-Substrate
Gate-Source
Gate-Substrate
Gate-Drain
Continuous Drain Current
SYMBOL
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
I
D
MAX. VALUE
20
20
25
25
25
25/-.3
25
50
UNITS
ABSOLUTE MAXIMUM
PARAMETER
Drain Current
V
Temperature Range
Operating
Storage
Power Dissipation
Package
Each Device
SYMBOL
I
D
T
J
T
S
P
D
P
D
MAX. VALUE
50
UNITS
mA
o
-55 to +85
-55 to +150
C
mA
640 (Note 1)
300 (Note 2)
mW
Notes:
1. Linear Derating Factor – 10.7mW/
o
C above 25
o
C
2. Linear Derating Factor – 5.0mW/
o
C above 25
o
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C, unless otherwise noted)
SYMBOL
BV
DS
BV
SB
I
GBS
V
GS(th)
PARAMETER
Drain-Source Breakdown Voltage
Source-Substrate Breakdown
Voltage
Gate-Body Leakage Current
Gate-Source Threshold Voltage0.5
40
r
DS(on)
Drain-Source ON Resistance
22
17
15
g
fs
c
(ga+gd+gb)
c
(gd+db)
c
(gs+sb)
c
(dg)
C
T
Common-Source Forward
Transconductance
Gate Node Capacitance
Drain Node Capacitance
Source Node Capacitance
Reverse Transfer Capacitance
Cross Talk
1012
2.4
1.3
3.5
0.3
-107
3.7
1.7
4.5
.7
dB
pFf = 1MHz, V
DS
= 10V, V
GS
= V
BS
= -15V
MIN
20
20
TYP
25
V
25
1.0
2.0
45
25
20
17
mmhos
ohms
µA
V
I
S
= 10µA, V
GS
= 0, Drain Open
V
GB
= 25V, V
DB
= V
SB
= 0
V
DS
= V
GS
, I
D
= 1.0µA, V
SB
= 0
V
GS
= 5V, I
D
= 1mA, V
SB
= 0
V
GS
= 10V, I
D
= 1mA, V
SB
= 0
V
GS
= 15V, I
D
= 1mA, V
SB
= 0
V
GS
= 20V, I
D
= 1mA, V
SB
= 0
V
DS
= 10V, I
D
= 20mA, f = 1KHz, V
SB
= 0
MAXUNITSCONDITIONS
I
D
= 10µA, V
GS
= V
BS
= 0
元器件交易网
SD5300
CORPORATION
SWITCHING CHARACTERISTICS
SYMBOL
t
d(on)
t
r
t
off *
PARAMETER
Turn-on Time
Rise Time
Turn-off Time
MINTYP
0.7
0.8
10.0
MAX
1.5
1.5
ns
UNITSCONDITIONS
R
L
= 680Ω, R
G
= 51
V
DD
= 5V
V
G(on)
= 10V
* t
off
is dependent on R
L
and C and does not depend on the device characteristics.
TEST CIRCUIT
TO
SCOPE
51Ω
+V
DD
SWITCHING WAVEFORM
+5V
R
L
V
OUT
TO SCOPE
90%
50%
10%
V
IN
OV
V
IN
T
d
(ON)
+V
DD
V
OUT
OV
Input Pulset
r
,t
p
<1nec
Rep rate = 1MHz
Sampling Scopet
r
<350psec
RIN = 1MΩ
CIN = 2pF
90%
50%
10%
t
r
10%
90%
t
OFF