2024年6月13日发(作者：行新苗)
40V N-Channel MOSFET
Applications:
●
Power Supply
●
DC-DC Converters
●
DC-AC Inverters
MXP4004BT
MXP4004BF
MXP4004BE
V
DS
40V
R
DS(ON)
(MAX)
3mΩ
I
D
170A
Features:
●
Lead Free
●
Low R
DS(ON)
to Minimize Conductive Loss
●
Low Gate Charge for Fast Switching Application
●
Optimized V
(BR)DSS
Ruggedness
Ordering Information
Park Number
MXP4004BT
MXP4004BF
MXP4004BE
Package
TO220
TO263-2L
TO263-3L
Brand
Pin Definition and Inner Circuit
MXP
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
P
D
V
GS
T
J
and T
stg
Drain-to-Source Voltage
Continuous Drain Current
T
C
=25℃unless otherwise specified
Parameter
Value
Silicon Limited
Package Limited
40
170
80
679
231
+/-20
-55 to 175
Unit
V
A
W
V
℃
Pulsed Drain Current @V
GS
=10V
Power Dissipation
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Avalanche Characteristics
Symbol
E
AS
①
I
AS
T
C
=25℃unless otherwise specified
Parameter
Value
200
Figure 9
Unit
mJ
A
Single Pulse Avalanche Energy
(V
DS
=20V, V
GS
=10V, Rg=25Ω, L=1mH)
Single Pulse Avalanche Current
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Max
0.65
62
Unit
℃/W
℃/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
① : Guarantee number.
©MaxPower Semiconductor 4004BT/F/E Preliminary Jul. 2013
Page1
40V N-Channel MOSFET
OFF Characteristics
Symbol
V
(BR)DSS
I
DSS
I
GSS
MXP4004BT
MXP4004BF
MXP4004BE
T
J
=25℃unless otherwise specified
MinTypMaxUnit
40
-
-
-
-
-
-
-
-
-
-
1
100
100
100
V
uA
nA
ParameterTest Conditions
V
GS
=0V, I
D
=250uA
V
DS
=32V, V
GS
=0V
V
DS
=32V, V
GS
=0V, T
J
=125 ℃
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
=+20V
V
GS
= -20V
ON Characteristics
Symbol
R
DS(ON)
V
GS(th)
Parameter
T
J
=25℃unless otherwise specified
MinTypMaxUnit
-
2
2.3
-
3.0
4
mΩ
V
Test Conditions
V
GS
=10V, I
D
=80A
V
GS
=V
DS
, I
D
=250uA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Dynamic Characteristics
Symbol
Parameter
T
J
=25℃unless otherwise specified
MinTypMaxUnit
5016
787
292
74
23
26
18.7
67.1
48.8
31
-
-
-
-
-
-
-
-
-
-
pF
Test Conditions
V
GS
=0V, V
DS
=20V,
f=1.0MHz
V
DD
=20V, I
D
=80A, V
GS
=10V
Input Capacitance
Ciss -
Output Capacitance
Coss -
Reverse Transfer Capacitance
Crss -
Total Gate Charge
Qg -
Gate-to-Source Charge
Qgs -
Gate-to-Drain ("Miller") Charge
Qgd -
Td(on)
Turn-on Delay Time
-
Rise Time
Tr-
Td(off)
Turn-off Delay Time
-
Fall Time
Tf-
nC
ns
V
DD
=20V, I
D
=40A,
V
GS
=10V, R
G
=10Ω, R
L
=0.5Ω
Source-Drain Diode Characteristics
T
J
=25℃unless otherwise specified
Symbol
V
SD
Trr
Qrr
Parameter
Min
-
-
-
Typ
-
51.6
35.1
Max
1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=80A, V
GS
=0V
Is=80A, di/dt=100A/μs
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
All Rights Reserved.
MXP4004BT/F/E Preliminary Jul. 2013
Page2
2024年6月13日发(作者：行新苗)
40V N-Channel MOSFET
Applications:
●
Power Supply
●
DC-DC Converters
●
DC-AC Inverters
MXP4004BT
MXP4004BF
MXP4004BE
V
DS
40V
R
DS(ON)
(MAX)
3mΩ
I
D
170A
Features:
●
Lead Free
●
Low R
DS(ON)
to Minimize Conductive Loss
●
Low Gate Charge for Fast Switching Application
●
Optimized V
(BR)DSS
Ruggedness
Ordering Information
Park Number
MXP4004BT
MXP4004BF
MXP4004BE
Package
TO220
TO263-2L
TO263-3L
Brand
Pin Definition and Inner Circuit
MXP
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
P
D
V
GS
T
J
and T
stg
Drain-to-Source Voltage
Continuous Drain Current
T
C
=25℃unless otherwise specified
Parameter
Value
Silicon Limited
Package Limited
40
170
80
679
231
+/-20
-55 to 175
Unit
V
A
W
V
℃
Pulsed Drain Current @V
GS
=10V
Power Dissipation
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Avalanche Characteristics
Symbol
E
AS
①
I
AS
T
C
=25℃unless otherwise specified
Parameter
Value
200
Figure 9
Unit
mJ
A
Single Pulse Avalanche Energy
(V
DS
=20V, V
GS
=10V, Rg=25Ω, L=1mH)
Single Pulse Avalanche Current
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Max
0.65
62
Unit
℃/W
℃/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
① : Guarantee number.
©MaxPower Semiconductor 4004BT/F/E Preliminary Jul. 2013
Page1
40V N-Channel MOSFET
OFF Characteristics
Symbol
V
(BR)DSS
I
DSS
I
GSS
MXP4004BT
MXP4004BF
MXP4004BE
T
J
=25℃unless otherwise specified
MinTypMaxUnit
40
-
-
-
-
-
-
-
-
-
-
1
100
100
100
V
uA
nA
ParameterTest Conditions
V
GS
=0V, I
D
=250uA
V
DS
=32V, V
GS
=0V
V
DS
=32V, V
GS
=0V, T
J
=125 ℃
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
=+20V
V
GS
= -20V
ON Characteristics
Symbol
R
DS(ON)
V
GS(th)
Parameter
T
J
=25℃unless otherwise specified
MinTypMaxUnit
-
2
2.3
-
3.0
4
mΩ
V
Test Conditions
V
GS
=10V, I
D
=80A
V
GS
=V
DS
, I
D
=250uA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Dynamic Characteristics
Symbol
Parameter
T
J
=25℃unless otherwise specified
MinTypMaxUnit
5016
787
292
74
23
26
18.7
67.1
48.8
31
-
-
-
-
-
-
-
-
-
-
pF
Test Conditions
V
GS
=0V, V
DS
=20V,
f=1.0MHz
V
DD
=20V, I
D
=80A, V
GS
=10V
Input Capacitance
Ciss -
Output Capacitance
Coss -
Reverse Transfer Capacitance
Crss -
Total Gate Charge
Qg -
Gate-to-Source Charge
Qgs -
Gate-to-Drain ("Miller") Charge
Qgd -
Td(on)
Turn-on Delay Time
-
Rise Time
Tr-
Td(off)
Turn-off Delay Time
-
Fall Time
Tf-
nC
ns
V
DD
=20V, I
D
=40A,
V
GS
=10V, R
G
=10Ω, R
L
=0.5Ω
Source-Drain Diode Characteristics
T
J
=25℃unless otherwise specified
Symbol
V
SD
Trr
Qrr
Parameter
Min
-
-
-
Typ
-
51.6
35.1
Max
1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=80A, V
GS
=0V
Is=80A, di/dt=100A/μs
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
All Rights Reserved.
MXP4004BT/F/E Preliminary Jul. 2013
Page2