2024年8月28日发(作者：矫小之)
TiW-etch-200
Article 104200-40
Titanium-Tungsten etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Safety note
The etching solution contains ammonium flouride. Even if the concentration is rather low
and the solution is classified according to present regulations, solutions containing
flourides have to be handled with maximum caution due to poisonous hazardous impact.
Comply with hazard information and safety recommendations of the material safety
datasheet.
Area of Use
TiW-etch-200 is applied as etchant for titanium-for the wet-chemical patterning of TiW-
layers with selectivity to metals like Au, Pt, Ni, Cr. Usual applications are found in the
semiconductor or microsystem technology field for etching adhesion layers or diffusion
barriers.
Advantages and Requirement Profile
TiW-etch-200 is compatible with common resist, shows very low undercut (in the
dimension of the layer thickness) under a resist mask pattern and offers selectivity to
numerous materials.
TiW-etch-200 is very useful for the patterning of Au layers using resist mask patterns or for
the selective removal of seed layers after plating process steps, where plated feature must
not be attacked by etchants.
TiW-etch-200 fits to the following requirement profile:
- Low undercut (in the range of the layer thickness), minimum feature size < 1µm
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Compatible to resist masking
Inteded Use
- Usable for manual process, tank or etching equipment
- Use in laboratory or production environment only
- Use for commercial application only
Selectivity
TiW-etch-200 is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ
®
Photoresist)
- Metals: no attack on Au, Cr, Ni; Cu is attacked
- Semiconductor materials: Si, SiO2, Si3N4
(further information on request)
Etching rate / capacity
Under normal condition, the etching rate is around 5nm/min (at room temperature).
The mixed etching solution is stable over time and can be used multiple times depending
on the requirements of application. It is recommended to dispose the solution at the latest,
when the etching rate has changed by 20%.
Seite 1/3
TiW-etch-200
Article 104200-40
Titanium-Tungsten etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Order number / Article number/ Shipping form
Tiw-etch-200 is shipped ready for use.
As a standard, all compounds used are level „extra pure“.
Order number: Article number + Container-Code
TiW-etch-200
(ready-to-use)
On request:
Article number
1l
104200-40 D
Container-Code
2,5l 5l 10l
E F G
20l
H
- Certificate of Analysis with individual requirements regarding elements
- etching solution in other purity grade or special grade regarding specific elements
Mixture
TiW-etch-200:
The solution is shipped ready for use.
Etching conditions
Temperature:
Tank:
Agitation:
Etching rate:
Pretreatment:
Post treatment:
Room temperature
Tank for batch process, Petri dish for manual application
medium;
Circulation; stirring bar; autom./ man. agitation of work piece
5nm per minute (at room temperature)
where applicable descum / oxygen plasma for improving the wetting
properties of resist or metal mask (no wetting agents needed)
A thin residue of tungsten oxide remains on the surface. This can be
removed with a short dip (15 to 30seconds) in alkaline solutions. As an
alternative, the residue can be removed with a short dip (max 2 min) in
hydrogen peroxide (H
2
O
2
30%).
Etching result / inspection
The completed removal of the TiW layer can be identified by visual observation. There
should be no visible residue of TiW, which should be verified by inspections with optical
microscope.
A thin residue of tungsten oxide remains on the surface. This can be removed with a short
dip (15 to 30seconds) in alkaline solutions. As an alternative, the residue can be removed
with a short dip (max 2 min) in hydrogen peroxide (H
2
O
2
30%).
Seite 2/3
TiW-etch-200
Article 104200-40
Titanium-Tungsten etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
General application notes
Pretreatment
Substrates should be pretreated in oxygen plasma, in order to remove any potential
organic residues and to improve the wetting properties of the solution on resist masks. The
surface is getting hydrophilic and no extra wetting agents are required.
Etching process
During the etching process, sufficient agitation of the solution or of the substrate is
needed. If used in manual processing, the etching time required can be identified by
observing a color changeover in the open etching areas and. After visual qualification the
etching should be continued for 10% bis 15% of the time elapsed, in order to assure the
removal of any residues.
Post treatment
A thin residue of tungsten oxide remains on the surface. This can be removed with a short
dip (15 to 30seconds) in alkaline solutions. As an alternative, the residue can be removed
with a short dip (max 2 min) in hydrogen peroxide (H2O2 30%).
Thorough cleaning with DI-water / quick dump
Rinsing dryer or manually drying with nitrogen nozzle
Know issues / trouble shooting
Inhomogeneous etching result / incompleted etching
- Poor wetting / no descum or plasma executed
- Etching solution /etching capacity is consumed
- Not enough agitation
Poor resolution / high undercut
- Poor adhesion of resist
- Excessive etching time
Safety and disposal notes
The mixture contains ammonium fluoride. Refer to the safety and handling
recommendations of the material safety datasheet before use.
Do not empty into drains or the aquatic environment. Collect used or unused solution in
containers and perform waste disposal according to official state regulations.
Treat contaminated containers like the substance itself. Cleaned containers may be
recycled.
Technischer Support
NB Technologies GmbH
Fahrenheitstr. 1, 28259 Bremen
Tel.:FAX.*************
Email:***********************
Web:
Seite 3/3
2024年8月28日发(作者：矫小之)
TiW-etch-200
Article 104200-40
Titanium-Tungsten etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Safety note
The etching solution contains ammonium flouride. Even if the concentration is rather low
and the solution is classified according to present regulations, solutions containing
flourides have to be handled with maximum caution due to poisonous hazardous impact.
Comply with hazard information and safety recommendations of the material safety
datasheet.
Area of Use
TiW-etch-200 is applied as etchant for titanium-for the wet-chemical patterning of TiW-
layers with selectivity to metals like Au, Pt, Ni, Cr. Usual applications are found in the
semiconductor or microsystem technology field for etching adhesion layers or diffusion
barriers.
Advantages and Requirement Profile
TiW-etch-200 is compatible with common resist, shows very low undercut (in the
dimension of the layer thickness) under a resist mask pattern and offers selectivity to
numerous materials.
TiW-etch-200 is very useful for the patterning of Au layers using resist mask patterns or for
the selective removal of seed layers after plating process steps, where plated feature must
not be attacked by etchants.
TiW-etch-200 fits to the following requirement profile:
- Low undercut (in the range of the layer thickness), minimum feature size < 1µm
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Compatible to resist masking
Inteded Use
- Usable for manual process, tank or etching equipment
- Use in laboratory or production environment only
- Use for commercial application only
Selectivity
TiW-etch-200 is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ
®
Photoresist)
- Metals: no attack on Au, Cr, Ni; Cu is attacked
- Semiconductor materials: Si, SiO2, Si3N4
(further information on request)
Etching rate / capacity
Under normal condition, the etching rate is around 5nm/min (at room temperature).
The mixed etching solution is stable over time and can be used multiple times depending
on the requirements of application. It is recommended to dispose the solution at the latest,
when the etching rate has changed by 20%.
Seite 1/3
TiW-etch-200
Article 104200-40
Titanium-Tungsten etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Order number / Article number/ Shipping form
Tiw-etch-200 is shipped ready for use.
As a standard, all compounds used are level „extra pure“.
Order number: Article number + Container-Code
TiW-etch-200
(ready-to-use)
On request:
Article number
1l
104200-40 D
Container-Code
2,5l 5l 10l
E F G
20l
H
- Certificate of Analysis with individual requirements regarding elements
- etching solution in other purity grade or special grade regarding specific elements
Mixture
TiW-etch-200:
The solution is shipped ready for use.
Etching conditions
Temperature:
Tank:
Agitation:
Etching rate:
Pretreatment:
Post treatment:
Room temperature
Tank for batch process, Petri dish for manual application
medium;
Circulation; stirring bar; autom./ man. agitation of work piece
5nm per minute (at room temperature)
where applicable descum / oxygen plasma for improving the wetting
properties of resist or metal mask (no wetting agents needed)
A thin residue of tungsten oxide remains on the surface. This can be
removed with a short dip (15 to 30seconds) in alkaline solutions. As an
alternative, the residue can be removed with a short dip (max 2 min) in
hydrogen peroxide (H
2
O
2
30%).
Etching result / inspection
The completed removal of the TiW layer can be identified by visual observation. There
should be no visible residue of TiW, which should be verified by inspections with optical
microscope.
A thin residue of tungsten oxide remains on the surface. This can be removed with a short
dip (15 to 30seconds) in alkaline solutions. As an alternative, the residue can be removed
with a short dip (max 2 min) in hydrogen peroxide (H
2
O
2
30%).
Seite 2/3
TiW-etch-200
Article 104200-40
Titanium-Tungsten etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
General application notes
Pretreatment
Substrates should be pretreated in oxygen plasma, in order to remove any potential
organic residues and to improve the wetting properties of the solution on resist masks. The
surface is getting hydrophilic and no extra wetting agents are required.
Etching process
During the etching process, sufficient agitation of the solution or of the substrate is
needed. If used in manual processing, the etching time required can be identified by
observing a color changeover in the open etching areas and. After visual qualification the
etching should be continued for 10% bis 15% of the time elapsed, in order to assure the
removal of any residues.
Post treatment
A thin residue of tungsten oxide remains on the surface. This can be removed with a short
dip (15 to 30seconds) in alkaline solutions. As an alternative, the residue can be removed
with a short dip (max 2 min) in hydrogen peroxide (H2O2 30%).
Thorough cleaning with DI-water / quick dump
Rinsing dryer or manually drying with nitrogen nozzle
Know issues / trouble shooting
Inhomogeneous etching result / incompleted etching
- Poor wetting / no descum or plasma executed
- Etching solution /etching capacity is consumed
- Not enough agitation
Poor resolution / high undercut
- Poor adhesion of resist
- Excessive etching time
Safety and disposal notes
The mixture contains ammonium fluoride. Refer to the safety and handling
recommendations of the material safety datasheet before use.
Do not empty into drains or the aquatic environment. Collect used or unused solution in
containers and perform waste disposal according to official state regulations.
Treat contaminated containers like the substance itself. Cleaned containers may be
recycled.
Technischer Support
NB Technologies GmbH
Fahrenheitstr. 1, 28259 Bremen
Tel.:FAX.*************
Email:***********************
Web:
Seite 3/3