2024年8月28日发(作者：荆泽)
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Area of use
Cr-etch-200 is an alkaline etchant for Cr. The etchant is used for the wet-chemical
patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti,
Ta. Common areas of use are for semiconductor fabrication or microsystem technology,
e.g.
- for the patterning of thin Cr layers.
Cr-etch-200 is not compatible with (positive tone) photo resist.
In applications with resist masks use Cr-etch-210 instead.
- for the removal of seed layers (e.g. Cr/Au or Cr/Cu) after electroplating, where a Cr
barrier or adhesion layer has to be removed.
Advantages and Requirement Profile
Cr-etch-200 shows very low undercut (in the dimension of the layer thickness) and offers
selectivity to numerous materials.
Cr-etch-200 is very useful for the patterning of Cr layers or for the selective removal of
seed layers after plating process steps, where plated feature must not be attacked by
etchants. Cr-etch-200 is available in different purity grades. The etchant can be used at
room temperature and is easy to handle.
Cr-etch-200 fits to the following requirement profile:
- Low undercut (in the range of the layer thickness), minimum feature size < 1µm
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Available in different purity grades
- Use at room temperature
Inteded Use
- Usable for manual process, tank or etching equipment
- Use in laboratory or production environment only
- Use for commercial application only
Selectivity
Cr-etch-200 is compatible/etches selective to following materials:
- Metals: no attack on Au, Sn, Pt, Cu, Ni, Ti, Ta; TiW with limitations
- Semiconductor materials: Si, SiO2, Si3N4 (further information on request)
Not compatible: positive tone resist (Novolak)
Etching rate / capacity
Under normal condition, the etching rate is around 12 to 15nm/min (at RT).
A sputtered 30nm Cr layer is etched in about 150 seconds. The mixed etching solution is
stable over time and can be used multiple times depending on the requirements of
application. It is recommended to dispose the solution at the latest, when the etching rate
has changed by 20%.
Page 1/4
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Order number / Article number/ Shipping form
Cr-etch-200 is shipped ready for use.
As a standard, all compounds used are level „extra pure“.
Order number: Article number + Container-Code
Cr-etch-200
(ready-to-use)
On request:
Article number
1l
101200-40 D
Container-Code
5l 10l
F G
20l
H
- Certificate of Analysis with individual requirements regarding elements
- etching solution in other purity grade or special grade regarding specific elements
Mixture
Cr-etch-200:
The solution is shipped ready for use.
Etching conditions
Temperature:
Tank:
Agitation:
Etching rate:
Pretreatment:
20°C to 40°C
Tank for batch process, Petri dish for manual application
medium;
Circulation; stirring bar; autom./ man. agitation of work piece
12 to 15nm per minute (at RT)
where applicable descum / oxygen plasma for improving the wetting
properties of metal mask (no wetting agents needed)
Etching result / inspection
The completed removal of the Cr can be identified by visual observation. There should be
no visible residue of Cr, which should be verified by inspections with optical microscope.
General application notes
Pretreatment
Substrates with low wetting should be pretreated in oxygen plasma, in order to remove any
potential organic residues and to improve the wetting properties of the solution. The
surface is getting hydrophilic and no extra wetting agents are required.
Etching process
During the etching process, sufficient agitation of the solution or of the substrate is
needed. If used in manual processing, the etching time required can be identified by
observing a color changeover in the open etching areas and. After visual qualification the
etching should be continued for 10% to 15% of the time elapsed, in order to assure the
removal of any residues.
Page 2/4
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Post treatment
Thorough cleaning with DI-water / quick dump
Rinsing dryer or manually drying with nitrogen nozzle
Example of process sequence
In the left column, a common process with usual undercut is depicted. In the right column,
a process without significant undercut using the Cr-etch-200 solution is depicted.
After a patterned plating step, the seed layer of Cr/Au needs to be etched, in order to
separate the plated features electrically. Using the Cr-etch-200, no significant undercut
occurs.
0. Au layer deposition
(and adhesion
layer of Cr)
1. Photo resist
pattern for
electroplating
2. Plasma treatment
3. Electroplating (e.g.
Ni)
Au
Si
Cr Au
Si
Cr
PR PR
Ni
4. Resist removal
5. Wet etch of Au
seed (and
adhesion layer
removal)
Common etch process
showing high undercut
Etch process using
Cr-etch-200 showing least
undercut
(undercut of Au layer can be
minimised using
Au-etch-200)
Page 3/4
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Know issues / trouble shooting
Inhomogeneous etching result / incompleted etching
- Poor wetting / no descum or plasma executed
- Etching solution /etching capacity is consumed
- Not enough agitation
Poor resolution / high undercut
- Excessive etching time
Cr-etch-200 is not compatible with photo resists.
In applications with (positive tone) photo resist, Cr-etch-210 should be used instead.
Safety and disposal notes
This mixture is classified as hazardous substance according to international regulations.
Refer to the safety and handling recommendations of the material safety datasheet before
use.
Do not empty into drains or the aquatic environment. Collect used or unused solution in
containers and perform waste disposal according to official state regulations.
Cleaned containers may be recycled.
Technical Support
NB Technologies GmbH
Fahrenheitstr. 1, 28259 Bremen
Tel.: +49 421 2445810 FAX.: +49 0421 22379787
Email:***********************
Web:
Page 4/4
2024年8月28日发(作者：荆泽)
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Area of use
Cr-etch-200 is an alkaline etchant for Cr. The etchant is used for the wet-chemical
patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti,
Ta. Common areas of use are for semiconductor fabrication or microsystem technology,
e.g.
- for the patterning of thin Cr layers.
Cr-etch-200 is not compatible with (positive tone) photo resist.
In applications with resist masks use Cr-etch-210 instead.
- for the removal of seed layers (e.g. Cr/Au or Cr/Cu) after electroplating, where a Cr
barrier or adhesion layer has to be removed.
Advantages and Requirement Profile
Cr-etch-200 shows very low undercut (in the dimension of the layer thickness) and offers
selectivity to numerous materials.
Cr-etch-200 is very useful for the patterning of Cr layers or for the selective removal of
seed layers after plating process steps, where plated feature must not be attacked by
etchants. Cr-etch-200 is available in different purity grades. The etchant can be used at
room temperature and is easy to handle.
Cr-etch-200 fits to the following requirement profile:
- Low undercut (in the range of the layer thickness), minimum feature size < 1µm
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Available in different purity grades
- Use at room temperature
Inteded Use
- Usable for manual process, tank or etching equipment
- Use in laboratory or production environment only
- Use for commercial application only
Selectivity
Cr-etch-200 is compatible/etches selective to following materials:
- Metals: no attack on Au, Sn, Pt, Cu, Ni, Ti, Ta; TiW with limitations
- Semiconductor materials: Si, SiO2, Si3N4 (further information on request)
Not compatible: positive tone resist (Novolak)
Etching rate / capacity
Under normal condition, the etching rate is around 12 to 15nm/min (at RT).
A sputtered 30nm Cr layer is etched in about 150 seconds. The mixed etching solution is
stable over time and can be used multiple times depending on the requirements of
application. It is recommended to dispose the solution at the latest, when the etching rate
has changed by 20%.
Page 1/4
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Order number / Article number/ Shipping form
Cr-etch-200 is shipped ready for use.
As a standard, all compounds used are level „extra pure“.
Order number: Article number + Container-Code
Cr-etch-200
(ready-to-use)
On request:
Article number
1l
101200-40 D
Container-Code
5l 10l
F G
20l
H
- Certificate of Analysis with individual requirements regarding elements
- etching solution in other purity grade or special grade regarding specific elements
Mixture
Cr-etch-200:
The solution is shipped ready for use.
Etching conditions
Temperature:
Tank:
Agitation:
Etching rate:
Pretreatment:
20°C to 40°C
Tank for batch process, Petri dish for manual application
medium;
Circulation; stirring bar; autom./ man. agitation of work piece
12 to 15nm per minute (at RT)
where applicable descum / oxygen plasma for improving the wetting
properties of metal mask (no wetting agents needed)
Etching result / inspection
The completed removal of the Cr can be identified by visual observation. There should be
no visible residue of Cr, which should be verified by inspections with optical microscope.
General application notes
Pretreatment
Substrates with low wetting should be pretreated in oxygen plasma, in order to remove any
potential organic residues and to improve the wetting properties of the solution. The
surface is getting hydrophilic and no extra wetting agents are required.
Etching process
During the etching process, sufficient agitation of the solution or of the substrate is
needed. If used in manual processing, the etching time required can be identified by
observing a color changeover in the open etching areas and. After visual qualification the
etching should be continued for 10% to 15% of the time elapsed, in order to assure the
removal of any residues.
Page 2/4
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Post treatment
Thorough cleaning with DI-water / quick dump
Rinsing dryer or manually drying with nitrogen nozzle
Example of process sequence
In the left column, a common process with usual undercut is depicted. In the right column,
a process without significant undercut using the Cr-etch-200 solution is depicted.
After a patterned plating step, the seed layer of Cr/Au needs to be etched, in order to
separate the plated features electrically. Using the Cr-etch-200, no significant undercut
occurs.
0. Au layer deposition
(and adhesion
layer of Cr)
1. Photo resist
pattern for
electroplating
2. Plasma treatment
3. Electroplating (e.g.
Ni)
Au
Si
Cr Au
Si
Cr
PR PR
Ni
4. Resist removal
5. Wet etch of Au
seed (and
adhesion layer
removal)
Common etch process
showing high undercut
Etch process using
Cr-etch-200 showing least
undercut
(undercut of Au layer can be
minimised using
Au-etch-200)
Page 3/4
Cr-etch-200
Article 101200-40
Cr etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Know issues / trouble shooting
Inhomogeneous etching result / incompleted etching
- Poor wetting / no descum or plasma executed
- Etching solution /etching capacity is consumed
- Not enough agitation
Poor resolution / high undercut
- Excessive etching time
Cr-etch-200 is not compatible with photo resists.
In applications with (positive tone) photo resist, Cr-etch-210 should be used instead.
Safety and disposal notes
This mixture is classified as hazardous substance according to international regulations.
Refer to the safety and handling recommendations of the material safety datasheet before
use.
Do not empty into drains or the aquatic environment. Collect used or unused solution in
containers and perform waste disposal according to official state regulations.
Cleaned containers may be recycled.
Technical Support
NB Technologies GmbH
Fahrenheitstr. 1, 28259 Bremen
Tel.: +49 421 2445810 FAX.: +49 0421 22379787
Email:***********************
Web:
Page 4/4