2024年9月11日发(作者：剑若)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV99WT1/D
SC-70/SOT-323 Dual Series
Switching Diode
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications
•ESD Protection
•Polarity Reversal Protection
•Data Line Protection
•Inductive Load Protection
•Steering Logic
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
(1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
BAV99WT1
BAV99RWT1
Motorola Preferred Devices
3
1
2
ANODE
1
CATHODE
2
3
CATHODE/ANODE
BAV99WT1
CASE 419–02, STYLE 9
SC–70/SOT–323
CATHODE
1
3
CATHODE/ANODE
BAV99RWT1
CASE 419–02, STYLE 10
SC–70/SOT–323
ANODE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board,
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
–5 = 1.0
2024年9月11日发(作者：剑若)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV99WT1/D
SC-70/SOT-323 Dual Series
Switching Diode
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications
•ESD Protection
•Polarity Reversal Protection
•Data Line Protection
•Inductive Load Protection
•Steering Logic
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
(1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
BAV99WT1
BAV99RWT1
Motorola Preferred Devices
3
1
2
ANODE
1
CATHODE
2
3
CATHODE/ANODE
BAV99WT1
CASE 419–02, STYLE 9
SC–70/SOT–323
CATHODE
1
3
CATHODE/ANODE
BAV99RWT1
CASE 419–02, STYLE 10
SC–70/SOT–323
ANODE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board,
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
–5 = 1.0