2024年9月14日发(作者：盍宛秋)
DIM250WHS06-S000
DIM250WHS06-S000
Half Bridge IGBT Module
PDS5676-1.3 February 2004
FEATURES
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
(typ)
600V
2.1V
(max)250A
(max)500A
n - Channel
High Switching Speed
Low Forward Voltage Drop
Isolated Base
APPLICATIONS
I
I
*(measured at the power busbars and not the auxiliary terminals)
PWM Motor Contro
l
UPS
7(E
2
)
6(G
2
)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM250WHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order as:
DIM250WHS06-S000
Note: When ordering, use complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.1/8
DIM250WHS06-S000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
T
case
= 65˚C
1ms, T
case
= 95˚C
T
case
= 25˚C, T
j
= 150˚C
V
R
= 0, t
p
= 10ms, T
vj
= 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
V
GE
= 0V
-
Test ConditionsMax.
600
±20
250
500
1157
TBD
2.5
Units
V
V
A
A
W
kA
2
s
kV
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Baseplate material: Cu
Creepage distance: 24mm
Symbol
R
th(j-c)
Parameter
Thermal resistance - transistor
Clearance: 13mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Min.
-
Typ.
-
Max.
108
Units
˚C/kW
R
th(j-c)
Thermal resistance - diode
Continuous dissipation -
junction to case
-
-
203
˚C/kW
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
15
˚C/kW
T
j
Junction temperature
-
-
-
–40
3
2.5
-
-
-
-
-
150
125
125
5
5
˚C
˚C
˚C
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM250WHS06-S000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
I
GES
V
GE(TH)
V
CE(sat)
†
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
= ±20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 250A
V
GE
= 15V, I
C
= 250A, , T
case
= 125˚C
I
F
I
FM
V
F
†
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
= 250A
I
F
= 250A, T
case
= 125˚C
C
ies
L
M
R
INT
Input capacitance
Module inductance
Internal transistor resistance - per arm
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.1
2.3
-
-
1.5
1.5
27
20
0.23
Max.
1
10
1
7.5
2.6
2.8
250
500
1.8
1.8
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
Note:
†
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + L
M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.3/8
DIM250WHS06-S000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/µs
Test Conditions
I
C
= 250A
V
GE
= ±15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
600
250
20
330
130
12
2
15
185
4
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/µs
Test Conditions
I
C
= 250A
V
GE
= ±15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
650
500
30
400
160
18
23
200
5
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
4/8Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM250WHS06-S000
TYPICAL CHARACTERISTICS
500
450
400
350
Common emitter
T
case
= 25˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
Common emitter
T
case
= 125˚C
450
V is measured at power
ce
busbars and not the
400
auxiliary terminals
350
300
250
200
150
100
500
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
300
250
200
150
100
50
0
0
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
12.034
Collector-emitter voltage, V
ce
- (V)
5
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
50
0
0
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
1.02.03.04.05.06.0
Collector-emitter voltage, V
ce
- (V)
Fig.3 Typical output characteristics
45
40
Fig.4 Typical output characteristics
Conditions:
T
case
= 125ºC
40
V
cc
= 300V
R
g
= 4.7 ohms
35
S
w
i
t
c
h
i
n
g
e
n
e
r
g
y
,
E
s
w
-
(
m
J
)
E
on
E
off
E
rec
Conditions:
T
case
= 125ºC
V
35
cc
= 300V
I
C
= 250A
30
S
w
i
t
c
h
i
n
g
e
n
e
r
g
y
,
E
s
w
-
(
m
J
)
30
25
20
15
10
5
0
0
25
20
15
10
E
off
E
on
E
rec
5
5
Collector current, I
C
- (A)
250300
0
2
4
1012
68
Gate Resistance, R
g
- (Ohms)
1416
Fig.4 Typical switching energy vs collector currentFig.5 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.5/8
DIM250WHS06-S000
500
450
400
350
F
o
w
a
r
d
c
u
r
r
e
n
t
,
I
F
-
(
A
)
V
F
is measured at power busbars
and not the auxiliary terminals
T
j
= 25˚C
T
j
= 125˚C
900
800
700
600
500
400
300
200
100
0
0
T
j
= 125˚C
V
ge
= ±15V
R
g
= 4.7 Ohms
Module I
C
Chip I
C
600
200400
Collector-emitter voltage, V
ce
- (V)
800
300
250
200
150
100
50
0
0
0.5
2.0
1.01.5
Foward voltage, V
F
- (V)
2.53.0
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
C
-
(
A
)
Fig.6 Diode typical forward characteristics
200
T
j
= 125˚C
180
160
Fig.7 Reverse bias safe operating area
1000
Transistor
Diode
140
120
100
80
60
40
20
0
0
Ir(A)
T
r
a
n
s
i
e
n
t
t
h
e
r
m
a
l
i
m
p
e
d
a
n
c
e
,
Z
t
h
(
j
-
c
)
-
(
°
C
/
k
W
)
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
c
u
r
r
e
n
t
,
I
r
r
-
(
A
)
100
10
IGBT
Diode
1
0.001
R
i
(˚C/KW)
τ
i
(ms)
R
i
(˚C/KW)
τ
i
(ms)
0.01
1234
2.5411 10.064513.642681.7155
0.1069 4.36321.918292.4022
4.643225.820824.1609147.9106
0.08952.657117.388671.8108
1
10
100
Reverse voltage, V
R
- (V)
600700
0.1
Pulse width, t
p
- (s)
Fig.7 Diode reverse bias safe operating area
Fig.8 Transient thermal impedance
6/8Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM250WHS06-S000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
7(E
2
)
6(G
2
)
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Nominal weight: 420g
Module outline type code: W
Fig. 15 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.7/8
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
e-mail:*****************************
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
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that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
2024年9月14日发(作者：盍宛秋)
DIM250WHS06-S000
DIM250WHS06-S000
Half Bridge IGBT Module
PDS5676-1.3 February 2004
FEATURES
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
(typ)
600V
2.1V
(max)250A
(max)500A
n - Channel
High Switching Speed
Low Forward Voltage Drop
Isolated Base
APPLICATIONS
I
I
*(measured at the power busbars and not the auxiliary terminals)
PWM Motor Contro
l
UPS
7(E
2
)
6(G
2
)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM250WHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order as:
DIM250WHS06-S000
Note: When ordering, use complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.1/8
DIM250WHS06-S000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
T
case
= 65˚C
1ms, T
case
= 95˚C
T
case
= 25˚C, T
j
= 150˚C
V
R
= 0, t
p
= 10ms, T
vj
= 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
V
GE
= 0V
-
Test ConditionsMax.
600
±20
250
500
1157
TBD
2.5
Units
V
V
A
A
W
kA
2
s
kV
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Baseplate material: Cu
Creepage distance: 24mm
Symbol
R
th(j-c)
Parameter
Thermal resistance - transistor
Clearance: 13mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Min.
-
Typ.
-
Max.
108
Units
˚C/kW
R
th(j-c)
Thermal resistance - diode
Continuous dissipation -
junction to case
-
-
203
˚C/kW
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
15
˚C/kW
T
j
Junction temperature
-
-
-
–40
3
2.5
-
-
-
-
-
150
125
125
5
5
˚C
˚C
˚C
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM250WHS06-S000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
I
GES
V
GE(TH)
V
CE(sat)
†
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
= ±20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 250A
V
GE
= 15V, I
C
= 250A, , T
case
= 125˚C
I
F
I
FM
V
F
†
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
= 250A
I
F
= 250A, T
case
= 125˚C
C
ies
L
M
R
INT
Input capacitance
Module inductance
Internal transistor resistance - per arm
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.1
2.3
-
-
1.5
1.5
27
20
0.23
Max.
1
10
1
7.5
2.6
2.8
250
500
1.8
1.8
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
Note:
†
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + L
M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.3/8
DIM250WHS06-S000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/µs
Test Conditions
I
C
= 250A
V
GE
= ±15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
600
250
20
330
130
12
2
15
185
4
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/µs
Test Conditions
I
C
= 250A
V
GE
= ±15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
650
500
30
400
160
18
23
200
5
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
4/8Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM250WHS06-S000
TYPICAL CHARACTERISTICS
500
450
400
350
Common emitter
T
case
= 25˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
Common emitter
T
case
= 125˚C
450
V is measured at power
ce
busbars and not the
400
auxiliary terminals
350
300
250
200
150
100
500
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
300
250
200
150
100
50
0
0
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
12.034
Collector-emitter voltage, V
ce
- (V)
5
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
50
0
0
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
1.02.03.04.05.06.0
Collector-emitter voltage, V
ce
- (V)
Fig.3 Typical output characteristics
45
40
Fig.4 Typical output characteristics
Conditions:
T
case
= 125ºC
40
V
cc
= 300V
R
g
= 4.7 ohms
35
S
w
i
t
c
h
i
n
g
e
n
e
r
g
y
,
E
s
w
-
(
m
J
)
E
on
E
off
E
rec
Conditions:
T
case
= 125ºC
V
35
cc
= 300V
I
C
= 250A
30
S
w
i
t
c
h
i
n
g
e
n
e
r
g
y
,
E
s
w
-
(
m
J
)
30
25
20
15
10
5
0
0
25
20
15
10
E
off
E
on
E
rec
5
5
Collector current, I
C
- (A)
250300
0
2
4
1012
68
Gate Resistance, R
g
- (Ohms)
1416
Fig.4 Typical switching energy vs collector currentFig.5 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.5/8
DIM250WHS06-S000
500
450
400
350
F
o
w
a
r
d
c
u
r
r
e
n
t
,
I
F
-
(
A
)
V
F
is measured at power busbars
and not the auxiliary terminals
T
j
= 25˚C
T
j
= 125˚C
900
800
700
600
500
400
300
200
100
0
0
T
j
= 125˚C
V
ge
= ±15V
R
g
= 4.7 Ohms
Module I
C
Chip I
C
600
200400
Collector-emitter voltage, V
ce
- (V)
800
300
250
200
150
100
50
0
0
0.5
2.0
1.01.5
Foward voltage, V
F
- (V)
2.53.0
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
C
-
(
A
)
Fig.6 Diode typical forward characteristics
200
T
j
= 125˚C
180
160
Fig.7 Reverse bias safe operating area
1000
Transistor
Diode
140
120
100
80
60
40
20
0
0
Ir(A)
T
r
a
n
s
i
e
n
t
t
h
e
r
m
a
l
i
m
p
e
d
a
n
c
e
,
Z
t
h
(
j
-
c
)
-
(
°
C
/
k
W
)
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
c
u
r
r
e
n
t
,
I
r
r
-
(
A
)
100
10
IGBT
Diode
1
0.001
R
i
(˚C/KW)
τ
i
(ms)
R
i
(˚C/KW)
τ
i
(ms)
0.01
1234
2.5411 10.064513.642681.7155
0.1069 4.36321.918292.4022
4.643225.820824.1609147.9106
0.08952.657117.388671.8108
1
10
100
Reverse voltage, V
R
- (V)
600700
0.1
Pulse width, t
p
- (s)
Fig.7 Diode reverse bias safe operating area
Fig.8 Transient thermal impedance
6/8Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DIM250WHS06-S000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
7(E
2
)
6(G
2
)
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Nominal weight: 420g
Module outline type code: W
Fig. 15 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.7/8
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
e-mail:*****************************
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.