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维沙伊 Siliconix S19-0330-Rev. A 晶体管说明书

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2024年10月22日发(作者:蓟成和)

SI4425FDY-T1-GE3

Si4425FDY

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

SO-8 Single

D

7

D

6

D

5

FEATURES

•TrenchFET

®

Gen IV p-channel power MOSFET

•100% R

g

tested

•Material categorization:,

for definitions of compliance please see

/doc?99912

3

S

4

G

D

8

APPLICATIONS

•Adapter switch

•Battery management

•Circuit protection

•Load switch

G

S

Top View

1

S

2

S

PRODUCT SUMMARY

V

DS

(V)

R

DS(on)

max. () at V

GS

= -10 V

R

DS(on)

max. () at V

GS

= -4.5 V

Q

g

typ. (nC)

I

D

(A)

a

Configuration

-30

0.0095

0.0160

13

-18.3

Single

•Motor drive control

P-Channel MOSFET

D

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SO-8

Si4425FDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

Continuous drain current (T

J

= 150 °C)

Pulsed drain current (t = 100 μs)

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

T

C

= 25 °C

T

A

= 70 °C

L = 0.1 mH

T

C

= 25 °C

T

C

= 70 °C

T

A

=25 °C

T

A

= 70 °C

SYMBOL LIMITUNIT

V

DS

-30

V

-20 / +16

V

GS

-18.3

-14.7

I

D

-12.7

b, c

-10.2

b, c

A

I

DM

-70

-4

I

S

-1.9

b, c

I

AS

15

11.25mJ

E

AS

4.8

3.1

P

D

W

2.3

b, c

1.5

b, c

T

J

, T

stg

-55 to +150

°C

260

T

C

= 25 °C

T

C

= 70 °C

Maximum power dissipation

T

A

= 25 °C

T

A

= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature)

d, e

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient

b, d

Maximum junction-to-case (drain)

t  10 s

Steady state

SYMBOL TYPICAL

R

thJA

R

thJF

42

21

MAXIMUM

53

26

UNIT

°C/W

Notes

e limited

e mounted on 1" x 1" FR4 board

c.t = 10 s

m under steady state conditions is 90 °C/W

e.T

C

= 25 °C

S19-0330-Rev. A, 08-Apr-2019

1

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

Vishay Siliconix

SYMBOL TEST CONDITIONS MIN.

V

DS

V

DS

/T

J

V

GS(th)

/T

J

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

I

F

= -10 A, di/dt = 100 A/μs,

T

J

= 25 °C

I

S

= -5 A, V

GS

= 0 V

T

C

= 25 °C

V

DD

= -15 V, R

L

= 1.5 , I

D

 -10 A,

V

GEN

= -10 V, R

g

= 1 

V

DD

= -15 V, R

L

= 1.5 , I

D

 -10 A,

V

GEN

= -4.5 V, R

g

= 1 

V

DS

= -15 V, V

GS

= -10 V, I

D

= -10 A

V

DS

= -15 V, V

GS

= -4.5 V, I

D

= -10 A

V

DS

= -15 V, V

GS

= -4.5 V, I

D

= -10 A

f = 1 MHz

V

DS

= -15 V, V

GS

= 0 V, f = 1 MHz

V

GS

= 0 V, I

D

= -250 μA

I

D

= -250 μA

V

DS

= V

GS

, I

D

= -250 μA

V

DS

= 0 V, V

GS

= -20 V / +16 V

V

DS

= -30 V, V

GS

= 0 V

V

DS

= -30 V, V

GS

= 0 V, T

J

= 55 °C

V

DS

 -5 V, V

GS

= 10 V

V

GS

= -10 V, I

D

= -10 A

V

GS

= -4.5 V, I

D

= -10 A

V

DS

= -10 V, I

D

= -10 A

-30

-

-

-1

-

-

-

-10

-

-

-

-

-

-

-

-

-

-

4

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TYP.

-

-13

5

-

-

-

-

-

0.0077

0.0127

47

1620

250

56

27

13

5.4

4.3

10

22

48

29

23

8

6

42

22

-

-

-0.78

26

12

12

14

-

-

-

-2.2

± 100

-1

-10

-

0.0095

0.0160

-

-

-

-

41

20

-

-

17

44

96

58

46

18

12

84

44

-4

-70

-1.2

52

24

-

-

ns

nC

pF

V

mV/°C

V

nA

μA

A

S

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER

Static

Drain-source breakdown voltage

V

DS

temperature coefficient

V

GS(th)

temperature coefficient

Gate-source threshold voltage

Gate-source leakage

Zero gate voltage drain current

On-state drain current

a

Drain-source on-state resistance

a

Forward transconductance

a

Dynamic

b

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Gate resistance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

Pulse diode forward current

Body diode voltage

Body diode reverse recovery time

Body diode reverse recovery charge

Reverse recovery fall time

Reverse recovery rise time

A

V

ns

nC

ns

Notes

test; pulse width  300 μs, duty cycle  2 %

teed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

S19-0330-Rev. A, 08-Apr-2019

2

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

V

GS

= 10 V thru 5 V

V

GS

= 4 V

Vishay Siliconix

Axis Title

10000

120

100

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

80

60

T

C

= 25 °C

10000

80

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

T

C

= -55 °C

60

40

100

V

GS

= 3 V

40

20

20

V

GS

= 2 V

T

C

= 125 °C

0

0123

10

0

01.22.43.64.86

V

GS

-Gate-to-Source Voltage (V)

10

45

V

DS

-Drain-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

Axis Title

0.0400

10000

10 000

Axis Title

10000

2

n

d

l

i

n

e

R

D

S

(

o

n

)

-

O

n

-

R

e

s

i

s

t

a

n

c

e

(

Ω

)

0.0320

V

GS

= 4.5 V

C

iss

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

2

n

d

l

i

n

e

C

-

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

1000

0.0160

V

GS

= 10 V

100

100

C

rss

100

0.0080

0.0000

I

D

-Drain Current (A)

10

10

V

DS

-Drain-to-Source Voltage (V)

10

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

10

2

n

d

l

i

n

e

V

G

S

-

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

I

D

= 10 A

Axis Title

1.5

2

n

d

l

i

n

e

R

D

S

(

o

n

)

-

O

n

-

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

10000

8

1.4

V

GS

= 10 V, 10 A

6

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

V

GS

= 4.5 V, 10 A

1.2

4

V

DS

= 10 V, 15 V, 20 V

1.1

100

2

0.9

0

Q

g

-Total Gate Charge (nC)

0.8

-50-255150

T

J

-Junction Temperature (°C)

10

Gate Charge

On-Resistance vs. Junction Temperature

S19-0330-Rev. A, 08-Apr-2019

3

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

1

s

t

l

i

n

e

2

n

d

l

i

n

e

0.0240

C

oss

1000

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

10000

0.040

I

D

= 10 A

Vishay Siliconix

Axis Title

10000

2

n

d

l

i

n

e

I

S

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

10

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

1

T

J

= 150 °C

T

J

= 25 °C

2

n

d

l

i

n

e

R

D

S

(

o

n

)

-

O

n

-

R

e

s

i

s

t

a

n

c

e

(

Ω

)

0.032

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

0.008

T

J

= 25 °C

0.024

T

J

= 125 °C

0.016

100

0.1

0.01

00.20.40.60.81.01.2

V

SD

-Source-to-Drain Voltage (V)

10

0

0246810

V

GS

-Gate-to-Source Voltage (V)

10

Source-Drain Diode Forward Voltage

Axis Title

1.0

10000

On-Resistance vs. Gate-to-Source Voltage

Axis Title

500

10000

0.7

2

n

d

l

i

n

e

V

G

S

(

t

h

)

-

V

a

r

i

a

n

c

e

(

V

)

I

D

= 250 μA

400

2

n

d

l

i

n

e

P

-

P

o

w

e

r

(

W

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

100

10

0.0010.01

t -Time (s)

0.11

300

0.4

I

D

= 5 mA

0.1

100

-0.2

200

-0.5

-50-255150

T

J

-Junction Temperature (°C)

10

0

0.0001

Threshold Voltage

Axis Title

100

I

DM

limited

I

D

limited

Single Pulse Power, Junction-to-Ambient

10000

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

10

100 μs

1 ms

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

10

1

Limited by R

DS(on)

a

10 ms

100 ms

0.1

T

A

= 25 °C,

single pulse

BVDSS limited

1 s

10 s

DC

0.01

0.010.1110100

V

DS

-Drain-to-Source Voltage (V)

Safe Operating Area, Junction-to-Ambient

Note

a.V

GS

> minimum V

GS

at which R

DS(on)

is specified

S19-0330-Rev. A, 08-Apr-2019

4

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

20

10000

Vishay Siliconix

16

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

4

10

5150

T

C

-Case Temperature (°C)

12

8

0

Current Derating

a

Axis Title

2.0

10000

6

Axis Title

10000

1.6

2

n

d

l

i

n

e

P

-

P

o

w

e

r

(

W

)

2

n

d

l

i

n

e

P

-

P

o

w

e

r

(

W

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

1.2

4.8

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

1.2

10

5150

T

C

-Case Temperature (°C)

3.6

0.8

100

0.4

2.4

0

5150

T

A

-Ambient Temperature (°C)

10

0

Power, Junction-to-AmbientPower, Junction-to-Case

Note

power dissipation P

D

is based on T

J

max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

S19-0330-Rev. A, 08-Apr-2019

5

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

1

Duty cycle = 0.5

Vishay Siliconix

10000

N

o

r

m

a

l

i

z

e

d

E

f

f

e

c

t

i

v

e

T

r

a

n

s

i

e

n

t

T

h

e

r

m

a

l

I

m

p

e

d

a

n

c

e

0.2

Notes

P

DM

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

t

0.1

0.1

0.05

0.02

Single pulse

t

t

1. Dutycycle, D =

t

2. Per unit base = R

thJA

= 90 °C/W

3. T

JM

-T

A

= P

DM

Z

thJA

4. Surface mounted

(t)

100

0.01

0.00010.0010.010.1110100

10

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title

1

Duty cycle = 0.5

0.2

0.1

10000

N

o

r

m

a

l

i

z

e

d

E

f

f

e

c

t

i

v

e

T

r

a

n

s

i

e

n

t

T

h

e

r

m

a

l

I

m

p

e

d

a

n

c

e

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

10

0.010.1110

Square Wave Pulse Duration (s)

0.1

0.02

0.05

Single pulse

0.01

0.00010.001

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silico n

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see /ppg?77095

.

S19-0330-Rev. A, 08-Apr-2019

6

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2019

1

Document Number: 91000

SI4425FDY-T1-GE3

2024年10月22日发(作者:蓟成和)

SI4425FDY-T1-GE3

Si4425FDY

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

SO-8 Single

D

7

D

6

D

5

FEATURES

•TrenchFET

®

Gen IV p-channel power MOSFET

•100% R

g

tested

•Material categorization:,

for definitions of compliance please see

/doc?99912

3

S

4

G

D

8

APPLICATIONS

•Adapter switch

•Battery management

•Circuit protection

•Load switch

G

S

Top View

1

S

2

S

PRODUCT SUMMARY

V

DS

(V)

R

DS(on)

max. () at V

GS

= -10 V

R

DS(on)

max. () at V

GS

= -4.5 V

Q

g

typ. (nC)

I

D

(A)

a

Configuration

-30

0.0095

0.0160

13

-18.3

Single

•Motor drive control

P-Channel MOSFET

D

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SO-8

Si4425FDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

Continuous drain current (T

J

= 150 °C)

Pulsed drain current (t = 100 μs)

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

T

C

= 25 °C

T

A

= 70 °C

L = 0.1 mH

T

C

= 25 °C

T

C

= 70 °C

T

A

=25 °C

T

A

= 70 °C

SYMBOL LIMITUNIT

V

DS

-30

V

-20 / +16

V

GS

-18.3

-14.7

I

D

-12.7

b, c

-10.2

b, c

A

I

DM

-70

-4

I

S

-1.9

b, c

I

AS

15

11.25mJ

E

AS

4.8

3.1

P

D

W

2.3

b, c

1.5

b, c

T

J

, T

stg

-55 to +150

°C

260

T

C

= 25 °C

T

C

= 70 °C

Maximum power dissipation

T

A

= 25 °C

T

A

= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature)

d, e

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient

b, d

Maximum junction-to-case (drain)

t  10 s

Steady state

SYMBOL TYPICAL

R

thJA

R

thJF

42

21

MAXIMUM

53

26

UNIT

°C/W

Notes

e limited

e mounted on 1" x 1" FR4 board

c.t = 10 s

m under steady state conditions is 90 °C/W

e.T

C

= 25 °C

S19-0330-Rev. A, 08-Apr-2019

1

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

Vishay Siliconix

SYMBOL TEST CONDITIONS MIN.

V

DS

V

DS

/T

J

V

GS(th)

/T

J

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

I

F

= -10 A, di/dt = 100 A/μs,

T

J

= 25 °C

I

S

= -5 A, V

GS

= 0 V

T

C

= 25 °C

V

DD

= -15 V, R

L

= 1.5 , I

D

 -10 A,

V

GEN

= -10 V, R

g

= 1 

V

DD

= -15 V, R

L

= 1.5 , I

D

 -10 A,

V

GEN

= -4.5 V, R

g

= 1 

V

DS

= -15 V, V

GS

= -10 V, I

D

= -10 A

V

DS

= -15 V, V

GS

= -4.5 V, I

D

= -10 A

V

DS

= -15 V, V

GS

= -4.5 V, I

D

= -10 A

f = 1 MHz

V

DS

= -15 V, V

GS

= 0 V, f = 1 MHz

V

GS

= 0 V, I

D

= -250 μA

I

D

= -250 μA

V

DS

= V

GS

, I

D

= -250 μA

V

DS

= 0 V, V

GS

= -20 V / +16 V

V

DS

= -30 V, V

GS

= 0 V

V

DS

= -30 V, V

GS

= 0 V, T

J

= 55 °C

V

DS

 -5 V, V

GS

= 10 V

V

GS

= -10 V, I

D

= -10 A

V

GS

= -4.5 V, I

D

= -10 A

V

DS

= -10 V, I

D

= -10 A

-30

-

-

-1

-

-

-

-10

-

-

-

-

-

-

-

-

-

-

4

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TYP.

-

-13

5

-

-

-

-

-

0.0077

0.0127

47

1620

250

56

27

13

5.4

4.3

10

22

48

29

23

8

6

42

22

-

-

-0.78

26

12

12

14

-

-

-

-2.2

± 100

-1

-10

-

0.0095

0.0160

-

-

-

-

41

20

-

-

17

44

96

58

46

18

12

84

44

-4

-70

-1.2

52

24

-

-

ns

nC

pF

V

mV/°C

V

nA

μA

A

S

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER

Static

Drain-source breakdown voltage

V

DS

temperature coefficient

V

GS(th)

temperature coefficient

Gate-source threshold voltage

Gate-source leakage

Zero gate voltage drain current

On-state drain current

a

Drain-source on-state resistance

a

Forward transconductance

a

Dynamic

b

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Gate resistance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

Pulse diode forward current

Body diode voltage

Body diode reverse recovery time

Body diode reverse recovery charge

Reverse recovery fall time

Reverse recovery rise time

A

V

ns

nC

ns

Notes

test; pulse width  300 μs, duty cycle  2 %

teed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

S19-0330-Rev. A, 08-Apr-2019

2

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

V

GS

= 10 V thru 5 V

V

GS

= 4 V

Vishay Siliconix

Axis Title

10000

120

100

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

80

60

T

C

= 25 °C

10000

80

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

T

C

= -55 °C

60

40

100

V

GS

= 3 V

40

20

20

V

GS

= 2 V

T

C

= 125 °C

0

0123

10

0

01.22.43.64.86

V

GS

-Gate-to-Source Voltage (V)

10

45

V

DS

-Drain-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

Axis Title

0.0400

10000

10 000

Axis Title

10000

2

n

d

l

i

n

e

R

D

S

(

o

n

)

-

O

n

-

R

e

s

i

s

t

a

n

c

e

(

Ω

)

0.0320

V

GS

= 4.5 V

C

iss

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

2

n

d

l

i

n

e

C

-

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

1000

0.0160

V

GS

= 10 V

100

100

C

rss

100

0.0080

0.0000

I

D

-Drain Current (A)

10

10

V

DS

-Drain-to-Source Voltage (V)

10

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

10

2

n

d

l

i

n

e

V

G

S

-

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

I

D

= 10 A

Axis Title

1.5

2

n

d

l

i

n

e

R

D

S

(

o

n

)

-

O

n

-

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

10000

8

1.4

V

GS

= 10 V, 10 A

6

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

V

GS

= 4.5 V, 10 A

1.2

4

V

DS

= 10 V, 15 V, 20 V

1.1

100

2

0.9

0

Q

g

-Total Gate Charge (nC)

0.8

-50-255150

T

J

-Junction Temperature (°C)

10

Gate Charge

On-Resistance vs. Junction Temperature

S19-0330-Rev. A, 08-Apr-2019

3

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

1

s

t

l

i

n

e

2

n

d

l

i

n

e

0.0240

C

oss

1000

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

10000

0.040

I

D

= 10 A

Vishay Siliconix

Axis Title

10000

2

n

d

l

i

n

e

I

S

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

10

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

1

T

J

= 150 °C

T

J

= 25 °C

2

n

d

l

i

n

e

R

D

S

(

o

n

)

-

O

n

-

R

e

s

i

s

t

a

n

c

e

(

Ω

)

0.032

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

0.008

T

J

= 25 °C

0.024

T

J

= 125 °C

0.016

100

0.1

0.01

00.20.40.60.81.01.2

V

SD

-Source-to-Drain Voltage (V)

10

0

0246810

V

GS

-Gate-to-Source Voltage (V)

10

Source-Drain Diode Forward Voltage

Axis Title

1.0

10000

On-Resistance vs. Gate-to-Source Voltage

Axis Title

500

10000

0.7

2

n

d

l

i

n

e

V

G

S

(

t

h

)

-

V

a

r

i

a

n

c

e

(

V

)

I

D

= 250 μA

400

2

n

d

l

i

n

e

P

-

P

o

w

e

r

(

W

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

100

10

0.0010.01

t -Time (s)

0.11

300

0.4

I

D

= 5 mA

0.1

100

-0.2

200

-0.5

-50-255150

T

J

-Junction Temperature (°C)

10

0

0.0001

Threshold Voltage

Axis Title

100

I

DM

limited

I

D

limited

Single Pulse Power, Junction-to-Ambient

10000

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

10

100 μs

1 ms

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

10

1

Limited by R

DS(on)

a

10 ms

100 ms

0.1

T

A

= 25 °C,

single pulse

BVDSS limited

1 s

10 s

DC

0.01

0.010.1110100

V

DS

-Drain-to-Source Voltage (V)

Safe Operating Area, Junction-to-Ambient

Note

a.V

GS

> minimum V

GS

at which R

DS(on)

is specified

S19-0330-Rev. A, 08-Apr-2019

4

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

20

10000

Vishay Siliconix

16

2

n

d

l

i

n

e

I

D

-

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

4

10

5150

T

C

-Case Temperature (°C)

12

8

0

Current Derating

a

Axis Title

2.0

10000

6

Axis Title

10000

1.6

2

n

d

l

i

n

e

P

-

P

o

w

e

r

(

W

)

2

n

d

l

i

n

e

P

-

P

o

w

e

r

(

W

)

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

1.2

4.8

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

1.2

10

5150

T

C

-Case Temperature (°C)

3.6

0.8

100

0.4

2.4

0

5150

T

A

-Ambient Temperature (°C)

10

0

Power, Junction-to-AmbientPower, Junction-to-Case

Note

power dissipation P

D

is based on T

J

max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

S19-0330-Rev. A, 08-Apr-2019

5

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Si4425FDY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

1

Duty cycle = 0.5

Vishay Siliconix

10000

N

o

r

m

a

l

i

z

e

d

E

f

f

e

c

t

i

v

e

T

r

a

n

s

i

e

n

t

T

h

e

r

m

a

l

I

m

p

e

d

a

n

c

e

0.2

Notes

P

DM

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

t

0.1

0.1

0.05

0.02

Single pulse

t

t

1. Dutycycle, D =

t

2. Per unit base = R

thJA

= 90 °C/W

3. T

JM

-T

A

= P

DM

Z

thJA

4. Surface mounted

(t)

100

0.01

0.00010.0010.010.1110100

10

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title

1

Duty cycle = 0.5

0.2

0.1

10000

N

o

r

m

a

l

i

z

e

d

E

f

f

e

c

t

i

v

e

T

r

a

n

s

i

e

n

t

T

h

e

r

m

a

l

I

m

p

e

d

a

n

c

e

1000

1

s

t

l

i

n

e

2

n

d

l

i

n

e

100

10

0.010.1110

Square Wave Pulse Duration (s)

0.1

0.02

0.05

Single pulse

0.01

0.00010.001

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silico n

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see /ppg?77095

.

S19-0330-Rev. A, 08-Apr-2019

6

For technical questions, contact: **************************

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000

Document Number: 77095

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

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purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2019

1

Document Number: 91000

SI4425FDY-T1-GE3

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