2024年10月22日发(作者:蓟成和)
SI4425FDY-T1-GE3
Si4425FDY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
SO-8 Single
D
7
D
6
D
5
FEATURES
•TrenchFET
®
Gen IV p-channel power MOSFET
•100% R
g
tested
•Material categorization:,
for definitions of compliance please see
/doc?99912
3
S
4
G
D
8
APPLICATIONS
•Adapter switch
•Battery management
•Circuit protection
•Load switch
G
S
Top View
1
S
2
S
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= -10 V
R
DS(on)
max. () at V
GS
= -4.5 V
Q
g
typ. (nC)
I
D
(A)
a
Configuration
-30
0.0095
0.0160
13
-18.3
Single
•Motor drive control
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SO-8
Si4425FDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
T
C
= 25 °C
T
A
= 70 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
=25 °C
T
A
= 70 °C
SYMBOL LIMITUNIT
V
DS
-30
V
-20 / +16
V
GS
-18.3
-14.7
I
D
-12.7
b, c
-10.2
b, c
A
I
DM
-70
-4
I
S
-1.9
b, c
I
AS
15
11.25mJ
E
AS
4.8
3.1
P
D
W
2.3
b, c
1.5
b, c
T
J
, T
stg
-55 to +150
°C
260
T
C
= 25 °C
T
C
= 70 °C
Maximum power dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b, d
Maximum junction-to-case (drain)
t 10 s
Steady state
SYMBOL TYPICAL
R
thJA
R
thJF
42
21
MAXIMUM
53
26
UNIT
°C/W
Notes
e limited
e mounted on 1" x 1" FR4 board
c.t = 10 s
m under steady state conditions is 90 °C/W
e.T
C
= 25 °C
S19-0330-Rev. A, 08-Apr-2019
1
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
Vishay Siliconix
SYMBOL TEST CONDITIONS MIN.
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -10 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= -5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -15 V, R
L
= 1.5 , I
D
-10 A,
V
GEN
= -10 V, R
g
= 1
V
DD
= -15 V, R
L
= 1.5 , I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
V
DS
= -15 V, V
GS
= -10 V, I
D
= -10 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -10 A
f = 1 MHz
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= -20 V / +16 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= 10 V
V
GS
= -10 V, I
D
= -10 A
V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -10 V, I
D
= -10 A
-30
-
-
-1
-
-
-
-10
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-13
5
-
-
-
-
-
0.0077
0.0127
47
1620
250
56
27
13
5.4
4.3
10
22
48
29
23
8
6
42
22
-
-
-0.78
26
12
12
14
-
-
-
-2.2
± 100
-1
-10
-
0.0095
0.0160
-
-
-
-
41
20
-
-
17
44
96
58
46
18
12
84
44
-4
-70
-1.2
52
24
-
-
ns
nC
pF
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
test; pulse width 300 μs, duty cycle 2 %
teed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0330-Rev. A, 08-Apr-2019
2
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 5 V
V
GS
= 4 V
Vishay Siliconix
Axis Title
10000
120
100
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
80
60
T
C
= 25 °C
10000
80
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
T
C
= -55 °C
60
40
100
V
GS
= 3 V
40
20
20
V
GS
= 2 V
T
C
= 125 °C
0
0123
10
0
01.22.43.64.86
V
GS
-Gate-to-Source Voltage (V)
10
45
V
DS
-Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
0.0400
10000
10 000
Axis Title
10000
2
n
d
l
i
n
e
R
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
0.0320
V
GS
= 4.5 V
C
iss
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
2
n
d
l
i
n
e
C
-
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1000
0.0160
V
GS
= 10 V
100
100
C
rss
100
0.0080
0.0000
I
D
-Drain Current (A)
10
10
V
DS
-Drain-to-Source Voltage (V)
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2
n
d
l
i
n
e
V
G
S
-
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
I
D
= 10 A
Axis Title
1.5
2
n
d
l
i
n
e
R
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
10000
8
1.4
V
GS
= 10 V, 10 A
6
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
V
GS
= 4.5 V, 10 A
1.2
4
V
DS
= 10 V, 15 V, 20 V
1.1
100
2
0.9
0
Q
g
-Total Gate Charge (nC)
0.8
-50-255150
T
J
-Junction Temperature (°C)
10
Gate Charge
On-Resistance vs. Junction Temperature
S19-0330-Rev. A, 08-Apr-2019
3
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
1
s
t
l
i
n
e
2
n
d
l
i
n
e
0.0240
C
oss
1000
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
10000
0.040
I
D
= 10 A
Vishay Siliconix
Axis Title
10000
2
n
d
l
i
n
e
I
S
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
10
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
1
T
J
= 150 °C
T
J
= 25 °C
2
n
d
l
i
n
e
R
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
0.032
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
0.008
T
J
= 25 °C
0.024
T
J
= 125 °C
0.016
100
0.1
0.01
00.20.40.60.81.01.2
V
SD
-Source-to-Drain Voltage (V)
10
0
0246810
V
GS
-Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
Axis Title
1.0
10000
On-Resistance vs. Gate-to-Source Voltage
Axis Title
500
10000
0.7
2
n
d
l
i
n
e
V
G
S
(
t
h
)
-
V
a
r
i
a
n
c
e
(
V
)
I
D
= 250 μA
400
2
n
d
l
i
n
e
P
-
P
o
w
e
r
(
W
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
100
10
0.0010.01
t -Time (s)
0.11
300
0.4
I
D
= 5 mA
0.1
100
-0.2
200
-0.5
-50-255150
T
J
-Junction Temperature (°C)
10
0
0.0001
Threshold Voltage
Axis Title
100
I
DM
limited
I
D
limited
Single Pulse Power, Junction-to-Ambient
10000
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
10
100 μs
1 ms
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
10
1
Limited by R
DS(on)
a
10 ms
100 ms
0.1
T
A
= 25 °C,
single pulse
BVDSS limited
1 s
10 s
DC
0.01
0.010.1110100
V
DS
-Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a.V
GS
> minimum V
GS
at which R
DS(on)
is specified
S19-0330-Rev. A, 08-Apr-2019
4
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
20
10000
Vishay Siliconix
16
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
4
10
5150
T
C
-Case Temperature (°C)
12
8
0
Current Derating
a
Axis Title
2.0
10000
6
Axis Title
10000
1.6
2
n
d
l
i
n
e
P
-
P
o
w
e
r
(
W
)
2
n
d
l
i
n
e
P
-
P
o
w
e
r
(
W
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
1.2
4.8
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
1.2
10
5150
T
C
-Case Temperature (°C)
3.6
0.8
100
0.4
2.4
0
5150
T
A
-Ambient Temperature (°C)
10
0
Power, Junction-to-AmbientPower, Junction-to-Case
Note
power dissipation P
D
is based on T
J
max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S19-0330-Rev. A, 08-Apr-2019
5
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
Vishay Siliconix
10000
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
0.2
Notes
P
DM
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
t
0.1
0.1
0.05
0.02
Single pulse
t
t
1. Dutycycle, D =
t
2. Per unit base = R
thJA
= 90 °C/W
3. T
JM
-T
A
= P
DM
Z
thJA
4. Surface mounted
(t)
100
0.01
0.00010.0010.010.1110100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
Duty cycle = 0.5
0.2
0.1
10000
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
10
0.010.1110
Square Wave Pulse Duration (s)
0.1
0.02
0.05
Single pulse
0.01
0.00010.001
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silico n
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see /ppg?77095
.
S19-0330-Rev. A, 08-Apr-2019
6
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000
SI4425FDY-T1-GE3
2024年10月22日发(作者:蓟成和)
SI4425FDY-T1-GE3
Si4425FDY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
SO-8 Single
D
7
D
6
D
5
FEATURES
•TrenchFET
®
Gen IV p-channel power MOSFET
•100% R
g
tested
•Material categorization:,
for definitions of compliance please see
/doc?99912
3
S
4
G
D
8
APPLICATIONS
•Adapter switch
•Battery management
•Circuit protection
•Load switch
G
S
Top View
1
S
2
S
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= -10 V
R
DS(on)
max. () at V
GS
= -4.5 V
Q
g
typ. (nC)
I
D
(A)
a
Configuration
-30
0.0095
0.0160
13
-18.3
Single
•Motor drive control
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SO-8
Si4425FDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
T
C
= 25 °C
T
A
= 70 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
=25 °C
T
A
= 70 °C
SYMBOL LIMITUNIT
V
DS
-30
V
-20 / +16
V
GS
-18.3
-14.7
I
D
-12.7
b, c
-10.2
b, c
A
I
DM
-70
-4
I
S
-1.9
b, c
I
AS
15
11.25mJ
E
AS
4.8
3.1
P
D
W
2.3
b, c
1.5
b, c
T
J
, T
stg
-55 to +150
°C
260
T
C
= 25 °C
T
C
= 70 °C
Maximum power dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b, d
Maximum junction-to-case (drain)
t 10 s
Steady state
SYMBOL TYPICAL
R
thJA
R
thJF
42
21
MAXIMUM
53
26
UNIT
°C/W
Notes
e limited
e mounted on 1" x 1" FR4 board
c.t = 10 s
m under steady state conditions is 90 °C/W
e.T
C
= 25 °C
S19-0330-Rev. A, 08-Apr-2019
1
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
Vishay Siliconix
SYMBOL TEST CONDITIONS MIN.
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -10 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= -5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -15 V, R
L
= 1.5 , I
D
-10 A,
V
GEN
= -10 V, R
g
= 1
V
DD
= -15 V, R
L
= 1.5 , I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
V
DS
= -15 V, V
GS
= -10 V, I
D
= -10 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -10 A
f = 1 MHz
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= -20 V / +16 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= 10 V
V
GS
= -10 V, I
D
= -10 A
V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -10 V, I
D
= -10 A
-30
-
-
-1
-
-
-
-10
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-13
5
-
-
-
-
-
0.0077
0.0127
47
1620
250
56
27
13
5.4
4.3
10
22
48
29
23
8
6
42
22
-
-
-0.78
26
12
12
14
-
-
-
-2.2
± 100
-1
-10
-
0.0095
0.0160
-
-
-
-
41
20
-
-
17
44
96
58
46
18
12
84
44
-4
-70
-1.2
52
24
-
-
ns
nC
pF
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
test; pulse width 300 μs, duty cycle 2 %
teed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0330-Rev. A, 08-Apr-2019
2
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 5 V
V
GS
= 4 V
Vishay Siliconix
Axis Title
10000
120
100
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
80
60
T
C
= 25 °C
10000
80
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
T
C
= -55 °C
60
40
100
V
GS
= 3 V
40
20
20
V
GS
= 2 V
T
C
= 125 °C
0
0123
10
0
01.22.43.64.86
V
GS
-Gate-to-Source Voltage (V)
10
45
V
DS
-Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
0.0400
10000
10 000
Axis Title
10000
2
n
d
l
i
n
e
R
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
0.0320
V
GS
= 4.5 V
C
iss
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
2
n
d
l
i
n
e
C
-
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1000
0.0160
V
GS
= 10 V
100
100
C
rss
100
0.0080
0.0000
I
D
-Drain Current (A)
10
10
V
DS
-Drain-to-Source Voltage (V)
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2
n
d
l
i
n
e
V
G
S
-
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
I
D
= 10 A
Axis Title
1.5
2
n
d
l
i
n
e
R
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
10000
8
1.4
V
GS
= 10 V, 10 A
6
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
V
GS
= 4.5 V, 10 A
1.2
4
V
DS
= 10 V, 15 V, 20 V
1.1
100
2
0.9
0
Q
g
-Total Gate Charge (nC)
0.8
-50-255150
T
J
-Junction Temperature (°C)
10
Gate Charge
On-Resistance vs. Junction Temperature
S19-0330-Rev. A, 08-Apr-2019
3
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
1
s
t
l
i
n
e
2
n
d
l
i
n
e
0.0240
C
oss
1000
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
10000
0.040
I
D
= 10 A
Vishay Siliconix
Axis Title
10000
2
n
d
l
i
n
e
I
S
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
10
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
1
T
J
= 150 °C
T
J
= 25 °C
2
n
d
l
i
n
e
R
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
0.032
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
0.008
T
J
= 25 °C
0.024
T
J
= 125 °C
0.016
100
0.1
0.01
00.20.40.60.81.01.2
V
SD
-Source-to-Drain Voltage (V)
10
0
0246810
V
GS
-Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
Axis Title
1.0
10000
On-Resistance vs. Gate-to-Source Voltage
Axis Title
500
10000
0.7
2
n
d
l
i
n
e
V
G
S
(
t
h
)
-
V
a
r
i
a
n
c
e
(
V
)
I
D
= 250 μA
400
2
n
d
l
i
n
e
P
-
P
o
w
e
r
(
W
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
100
10
0.0010.01
t -Time (s)
0.11
300
0.4
I
D
= 5 mA
0.1
100
-0.2
200
-0.5
-50-255150
T
J
-Junction Temperature (°C)
10
0
0.0001
Threshold Voltage
Axis Title
100
I
DM
limited
I
D
limited
Single Pulse Power, Junction-to-Ambient
10000
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
10
100 μs
1 ms
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
10
1
Limited by R
DS(on)
a
10 ms
100 ms
0.1
T
A
= 25 °C,
single pulse
BVDSS limited
1 s
10 s
DC
0.01
0.010.1110100
V
DS
-Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a.V
GS
> minimum V
GS
at which R
DS(on)
is specified
S19-0330-Rev. A, 08-Apr-2019
4
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
20
10000
Vishay Siliconix
16
2
n
d
l
i
n
e
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
4
10
5150
T
C
-Case Temperature (°C)
12
8
0
Current Derating
a
Axis Title
2.0
10000
6
Axis Title
10000
1.6
2
n
d
l
i
n
e
P
-
P
o
w
e
r
(
W
)
2
n
d
l
i
n
e
P
-
P
o
w
e
r
(
W
)
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
1.2
4.8
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
1.2
10
5150
T
C
-Case Temperature (°C)
3.6
0.8
100
0.4
2.4
0
5150
T
A
-Ambient Temperature (°C)
10
0
Power, Junction-to-AmbientPower, Junction-to-Case
Note
power dissipation P
D
is based on T
J
max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S19-0330-Rev. A, 08-Apr-2019
5
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Si4425FDY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
Vishay Siliconix
10000
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
0.2
Notes
P
DM
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
t
0.1
0.1
0.05
0.02
Single pulse
t
t
1. Dutycycle, D =
t
2. Per unit base = R
thJA
= 90 °C/W
3. T
JM
-T
A
= P
DM
Z
thJA
4. Surface mounted
(t)
100
0.01
0.00010.0010.010.1110100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
Duty cycle = 0.5
0.2
0.1
10000
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
1000
1
s
t
l
i
n
e
2
n
d
l
i
n
e
100
10
0.010.1110
Square Wave Pulse Duration (s)
0.1
0.02
0.05
Single pulse
0.01
0.00010.001
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silico n
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see /ppg?77095
.
S19-0330-Rev. A, 08-Apr-2019
6
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 77095
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000
SI4425FDY-T1-GE3