2024年3月14日发(作者：用瀚文)
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
•High-Fidelity Audio Output Amplifier
•General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: I
C
= 17A.
High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : V
CEO
=250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SA1943/FJL4215.
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts
1
TO-264
tor r
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
B
P
D
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
ParameterRatings
250
250
5
17
1.5
150
1.04
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Total Device Dissipation(T
C
=25°C)
Derate above 25°C
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
T=25°C unless otherwise noted
a
Symbol
R
θJC
* Device mounted on minimum pad size
Parameter
Thermal Resistance, Junction to Case
Max.
0.83
Units
°C/W
h
FE
Classification
Classification
h
FE1
R
55 ~ 110
O
80 ~ 160
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C1
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Electrical Characteristics*
T=25°C unless otherwise noted
a
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=5mA, I
E
=0
I
C
=10mA, R
BE
=∞
I
E
=5mA, I
C
=0
V
CB
=230V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=7A
I
C
=8A, I
B
=0.8A
V
CE
=5V, I
C
=7A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
Min.
250
250
5
V
V
V
5.0
5.0
55
3560
0.4
1.0
30
200
3.0
1.5
160
µA
µA
V
V
MHz
pF
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Part Number
2SC5200RTU
2SC5200OTU
FJL4315RTU
FJL4315OTU
Marking
C5200R
C5200O
J4315R
J4315O
Package
TO-264
TO-264
TO-264
TO-264
Packing Method
TUBE
TUBE
TUBE
TUBE
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C2
2024年3月14日发(作者：用瀚文)
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
•High-Fidelity Audio Output Amplifier
•General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: I
C
= 17A.
High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : V
CEO
=250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SA1943/FJL4215.
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts
1
TO-264
tor r
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
B
P
D
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
ParameterRatings
250
250
5
17
1.5
150
1.04
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Total Device Dissipation(T
C
=25°C)
Derate above 25°C
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
T=25°C unless otherwise noted
a
Symbol
R
θJC
* Device mounted on minimum pad size
Parameter
Thermal Resistance, Junction to Case
Max.
0.83
Units
°C/W
h
FE
Classification
Classification
h
FE1
R
55 ~ 110
O
80 ~ 160
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C1
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Electrical Characteristics*
T=25°C unless otherwise noted
a
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=5mA, I
E
=0
I
C
=10mA, R
BE
=∞
I
E
=5mA, I
C
=0
V
CB
=230V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=7A
I
C
=8A, I
B
=0.8A
V
CE
=5V, I
C
=7A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
Min.
250
250
5
V
V
V
5.0
5.0
55
3560
0.4
1.0
30
200
3.0
1.5
160
µA
µA
V
V
MHz
pF
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Part Number
2SC5200RTU
2SC5200OTU
FJL4315RTU
FJL4315OTU
Marking
C5200R
C5200O
J4315R
J4315O
Package
TO-264
TO-264
TO-264
TO-264
Packing Method
TUBE
TUBE
TUBE
TUBE
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C2