2024年3月26日发(作者：殳胜)
IRF530, SiHF530
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
26
5.5
11
Single
D
FEATURES
100
0.16
•
•
•
•
•
•
•
Dynamic dV/dt Rating
Repetitive Avalanche Rated
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF530PbF
SiHF530-E3
IRF530
SiHF530
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
ARAMETER SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
V
DS
LIMIT
100
14
10
0.59
69
14
8.8
88
- 55 to + 175
300
d
10
1.1
A
W/°C
mJ
A
mJ
W
UNIT
V
20 V
GS
±
I
D
I
DM
56
dV/dt 5.5V/ns
°C
lbf · in
N · m
Notes
tive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.V
DD
= 25 V, starting T
J
= 25 °C, L = 528 µH, R
G
= 25 Ω, I
AS
= 14 A (see fig. 12).
c.I
SD
≤ 14 A, dI/dt ≤ 140 A/µs, V
DD
≤ V
DS
, T
J
≤ 175 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
1
IRF530, SiHF530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
ARAMETER SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
R
thCS
R
thJC
TY.
-
0.50
-
MAX.
62
-
1.7
°C/W
UNIT
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
ARAMETER SYMBOL
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
TEST CONDITIONS .
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
100
-
2.0
-
-
-
-
0.12
-
-
-
-
-
-
4.0
± 100
25
250
0.16
-
-
-
-
26
5.5
11
-
-
-
-
-
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
V
V/°C
V
nA
µA
Ω
S
I
D
= 8.4 A
b
--
P
b
V
DS
= 50 V, I
D
= 8.4 A5.1-
V
GS
= 0 V,
-670
250
60
-
-
-
10
34
23
24
4.5
7.5
C
oss
-V
DS
= 25 V,
P
C
rss
-
f = 1.0 MHz, see fig. 5
I
D
= 14 A, V
DS
= 80 V,
Q
gs
V
GS
= 10 V
see fig. 6 and 13
b
Q
gd
t
d(on)
V
DD
= 50 V, I
D
= 14 A
R = 12 Ω, R
D
= 3.6 Ω, see fig. 10
b
G
t
d(off)
t
f
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
Q
g
-
-
-
-
-
-
-
-
-
S
nC
t
r
ns
G
nH
-
-
-
-
-
-
-
-
-
150
0.85
14
A
56
2.5
280
1.7
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 14 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
tive rating; pulse width limited by maximum junction temperature (see fig. 11).
width ≤ 300 µs; duty cycle ≤ 2 %.
2
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
IRF530, SiHF530
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °CFig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 175 °CFig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
3
IRF530, SiHF530
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
4
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
IRF530, SiHF530
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
V
DS
t
p
V
DD
D.U.T
I
AS
+
-
V
DD
V
DS
10 V
t
p
0.01 Ω
I
AS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
5
IRF530, SiHF530
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
Q
G
12 V
50 kΩ
0.2 µF
0.3 µF
10 V
Q
GS
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
6
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
IRF530, SiHF530
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
+
-
+
-
R
G
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by duty factor "D"
• D.U.T. - device under test
+
-
V
DD
Driver gate drive
P.W.
Period
D =
P.W.
Period
V
GS
= 10 V*
D.U.T. I
SD
waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V
DS
waveform
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Inductor current
Body diode forward drop
Ripple≤5 %
I
SD
*
V
GS
= 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see /ppg?91019.
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
1
This datasheet has been downloaded from:
Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
All Datasheets Cannot Be Modified Without Permission
Copyright © Each Manufacturing Company
2024年3月26日发(作者：殳胜)
IRF530, SiHF530
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
26
5.5
11
Single
D
FEATURES
100
0.16
•
•
•
•
•
•
•
Dynamic dV/dt Rating
Repetitive Avalanche Rated
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF530PbF
SiHF530-E3
IRF530
SiHF530
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
ARAMETER SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
V
DS
LIMIT
100
14
10
0.59
69
14
8.8
88
- 55 to + 175
300
d
10
1.1
A
W/°C
mJ
A
mJ
W
UNIT
V
20 V
GS
±
I
D
I
DM
56
dV/dt 5.5V/ns
°C
lbf · in
N · m
Notes
tive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.V
DD
= 25 V, starting T
J
= 25 °C, L = 528 µH, R
G
= 25 Ω, I
AS
= 14 A (see fig. 12).
c.I
SD
≤ 14 A, dI/dt ≤ 140 A/µs, V
DD
≤ V
DS
, T
J
≤ 175 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
1
IRF530, SiHF530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
ARAMETER SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
R
thCS
R
thJC
TY.
-
0.50
-
MAX.
62
-
1.7
°C/W
UNIT
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
ARAMETER SYMBOL
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
TEST CONDITIONS .
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
100
-
2.0
-
-
-
-
0.12
-
-
-
-
-
-
4.0
± 100
25
250
0.16
-
-
-
-
26
5.5
11
-
-
-
-
-
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
V
V/°C
V
nA
µA
Ω
S
I
D
= 8.4 A
b
--
P
b
V
DS
= 50 V, I
D
= 8.4 A5.1-
V
GS
= 0 V,
-670
250
60
-
-
-
10
34
23
24
4.5
7.5
C
oss
-V
DS
= 25 V,
P
C
rss
-
f = 1.0 MHz, see fig. 5
I
D
= 14 A, V
DS
= 80 V,
Q
gs
V
GS
= 10 V
see fig. 6 and 13
b
Q
gd
t
d(on)
V
DD
= 50 V, I
D
= 14 A
R = 12 Ω, R
D
= 3.6 Ω, see fig. 10
b
G
t
d(off)
t
f
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
Q
g
-
-
-
-
-
-
-
-
-
S
nC
t
r
ns
G
nH
-
-
-
-
-
-
-
-
-
150
0.85
14
A
56
2.5
280
1.7
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 14 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
tive rating; pulse width limited by maximum junction temperature (see fig. 11).
width ≤ 300 µs; duty cycle ≤ 2 %.
2
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
IRF530, SiHF530
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °CFig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 175 °CFig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
3
IRF530, SiHF530
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
4
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
IRF530, SiHF530
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
V
DS
t
p
V
DD
D.U.T
I
AS
+
-
V
DD
V
DS
10 V
t
p
0.01 Ω
I
AS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
5
IRF530, SiHF530
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
Q
G
12 V
50 kΩ
0.2 µF
0.3 µF
10 V
Q
GS
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
6
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
IRF530, SiHF530
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
+
-
+
-
R
G
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by duty factor "D"
• D.U.T. - device under test
+
-
V
DD
Driver gate drive
P.W.
Period
D =
P.W.
Period
V
GS
= 10 V*
D.U.T. I
SD
waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V
DS
waveform
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Inductor current
Body diode forward drop
Ripple≤5 %
I
SD
*
V
GS
= 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see /ppg?91019.
Document Number: 91019
S-81240-Rev. A, 16-Jun-08
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
1
This datasheet has been downloaded from:
Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
All Datasheets Cannot Be Modified Without Permission
Copyright © Each Manufacturing Company