2024年3月28日发(作者:问飞航)
OCT calibration is automatically performed at power-up for OCT-enabled I/Os.
Table1–13 lists OCT variation with temperature and voltage after power-up
calibration. Use Table1–13 to determine the OCT variation after power-up calibration
and Equation1–1 to determine the OCT variation without re-calibration.
Equation1– Variation Without Re-Calibration
(1)
,
(2)
,
(3)
,
(4)
,
(5)
,
(6)
dRdR
-
V
R
OCT
=R
SCAL
1+
------
T
------
dTdV
Notes to Equation1–1:
(1)The R
OCT
value calculated from Equation1–1 shows the range of OCT resistance with the variation of temperature
and V
CCIO
.
(2)R
SCAL
is the OCT resistance value at power-up.
(3)T is the variation of temperature with respect to the temperature at power-up.
(4)V is the variation of voltage with respect to the V
CCIO
at power-up.
(5)dR/dT is the percentage change of R
SCAL
with temperature.
(6)dR/dV is the percentage change of R
SCAL
with voltage.
Table1–13 lists the OCT variation after the power-up calibration.
Table1– Variation after Power-Up Calibration
(1)
SymbolDescriptionV
CCIO
(V)
3.0
dR/dV
OCT variation with voltage without
re-calibration
2.5
1.8
1.5
1.2
3.0
dR/dT
OCT variation with temperature
without re-calibration
2.5
1.8
1.5
1.2
Note to Table1–13:
(1)Valid for V
CCIO
range of ±5% and temperature range of 0° to 85°C.
Typical
0.0297
0.0344
0.0499
0.0744
0.1241
0.189
0.208
0.266
0.273
0.317
Unit
%/mV
%/°C
Pin Capacitance
Table1–14 lists the Stratix IV device family pin capacitance.
Table1– Capacitance for Stratix IV Devices (Part 1 of 2)
Symbol
C
IOTB
C
IOLR
C
CLKTB
C
CLKLR
Description
Input capacitance on the top and bottom I/O pins
Input capacitance on the left and right I/O pins
Input capacitance on the top and bottom non-dedicated clock input pins
Input capacitance on the left and right non-dedicated clock input pins
Value
4
4
4
4
Unit
pF
pF
pF
pF
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Table1–eiver Block Jitter Specifications for Stratix IV GX Devices
(1)
,
(2)
(Part 9 of 9)
–2 Commercial
Speed Grade
MinTyp
Jitter Frequency = 21.8
KHz
Sinusoidal Jitter
tolerance at 3072Mbps
Pattern = CJPAT
Jitter Frequency =
1843.2MHz to 20MHz
Pattern = CJPAT
Notes to Table1–30:
Symbol/
Description
Conditions
–3 Commercial/
Industrial
and –2× Commercial
Speed Grade
MinTyp
>8.5
Max
–3 Military
(3)
and
–4 Commercial/
Industrial Speed
Grade
MinTyp
>8.5
Max
Unit
Max
>8.5UI
>0.1>0.1>0.1UI
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Table1–eiver Jitter Specifications for Protocols by Stratix IV GT Devices (Part 2 of 2)
Symbol/
Description
Conditions
Jitter Frequency = 40KHz
Pattern = PRBS-31
Equalization = Disabled
Sinusoidal Jitter
tolerance
BER = 1E-12
Jitter Frequency 4MHz
Pattern = PRBS-31
Equalization = Disabled
BER = 1E-12
>0.05>0.05—UI
>5>5—UI
–1 Industrial Speed –2 Industrial Speed –3 Industrial Speed
GradeGradeGrade
MinTypMaxMinTypMaxMinTypMax
Unit
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Table1–uration Mode Specifications for Stratix IV Devices
Programming Mode
Remote update only in fast AS mode
Note to Table1–37:
(1)This denotes the maximum frequency supported in the FPP configuration scheme. The frequency supported for
each device may vary depending on device density. For more information, refer to the Configuration, Design
Security, and Remote System Upgrades in Stratix IV Devices chapter.
DCLK F
MAX
Min
4.3
Typ
5.3
Max
10
Unit
MHz
Table1–38 lists the JTAG timing parameters and values for Stratix IV devices.
Table1– Timing Parameters and Values for Stratix IV Devices
Symbol
t
JCP
t
JCH
t
JCL
t
JPSU (TDI)
t
JPSU (TMS)
t
JPH
t
JPCO
t
JPZX
t
JPXZ
Description
TCK clock period
TCK clock high time
TCK clock low time
TDI JTAG port setup time
TMS JTAG port setup time
JTAG port hold time
JTAG port clock to output
JTAG port high impedance to valid output
JTAG port valid output to high impedance
Min
30
14
14
1
3
5
—
—
—
Max
—
—
—
—
—
—
11
(1)
14
(1)
14
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note to Table1–38:
(1)A 1 ns adder is required for each V
CCIO
voltage step down from 3.0 V. For example, t
JPCO
= 12 ns if V
CCIO
of the TDO
I/O bank = 2.5 V, or 13 ns if it equals 1.8 V.
Temperature Sensing Diode Specifications
Table1–39 lists the specifications for the Stratix IV temperature sensing diode.
Table1–al Temperature Sensing Diode Specifications for StratixIV Devices
Description
I
bias
, diode source current
V
bias,
voltage across diode
Series resistance
Diode ideality factor
Min
8
0.3
—
1.026
Typ
—
—
—
1.028
Max
500
0.9
< 5
1.030
Unit
A
V
—
Table1–40 lists the specifications for the Stratix IV internal temperature sensing diode.
Table1–al Temperature Sensing Diode Specifications for StratixIV Devices
Temperature
Accuracy
Range
–40 to 100°C±8°C
Offset Calibrated
Option
No
Sampling Rate
Frequency:
500kHz, 1MHz
Conversion
Time
<100ms
Resolution
8bits
Minimum Resolution
with No Missing Codes
8bits
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
2024年3月28日发(作者:问飞航)
OCT calibration is automatically performed at power-up for OCT-enabled I/Os.
Table1–13 lists OCT variation with temperature and voltage after power-up
calibration. Use Table1–13 to determine the OCT variation after power-up calibration
and Equation1–1 to determine the OCT variation without re-calibration.
Equation1– Variation Without Re-Calibration
(1)
,
(2)
,
(3)
,
(4)
,
(5)
,
(6)
dRdR
-
V
R
OCT
=R
SCAL
1+
------
T
------
dTdV
Notes to Equation1–1:
(1)The R
OCT
value calculated from Equation1–1 shows the range of OCT resistance with the variation of temperature
and V
CCIO
.
(2)R
SCAL
is the OCT resistance value at power-up.
(3)T is the variation of temperature with respect to the temperature at power-up.
(4)V is the variation of voltage with respect to the V
CCIO
at power-up.
(5)dR/dT is the percentage change of R
SCAL
with temperature.
(6)dR/dV is the percentage change of R
SCAL
with voltage.
Table1–13 lists the OCT variation after the power-up calibration.
Table1– Variation after Power-Up Calibration
(1)
SymbolDescriptionV
CCIO
(V)
3.0
dR/dV
OCT variation with voltage without
re-calibration
2.5
1.8
1.5
1.2
3.0
dR/dT
OCT variation with temperature
without re-calibration
2.5
1.8
1.5
1.2
Note to Table1–13:
(1)Valid for V
CCIO
range of ±5% and temperature range of 0° to 85°C.
Typical
0.0297
0.0344
0.0499
0.0744
0.1241
0.189
0.208
0.266
0.273
0.317
Unit
%/mV
%/°C
Pin Capacitance
Table1–14 lists the Stratix IV device family pin capacitance.
Table1– Capacitance for Stratix IV Devices (Part 1 of 2)
Symbol
C
IOTB
C
IOLR
C
CLKTB
C
CLKLR
Description
Input capacitance on the top and bottom I/O pins
Input capacitance on the left and right I/O pins
Input capacitance on the top and bottom non-dedicated clock input pins
Input capacitance on the left and right non-dedicated clock input pins
Value
4
4
4
4
Unit
pF
pF
pF
pF
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Table1–eiver Block Jitter Specifications for Stratix IV GX Devices
(1)
,
(2)
(Part 9 of 9)
–2 Commercial
Speed Grade
MinTyp
Jitter Frequency = 21.8
KHz
Sinusoidal Jitter
tolerance at 3072Mbps
Pattern = CJPAT
Jitter Frequency =
1843.2MHz to 20MHz
Pattern = CJPAT
Notes to Table1–30:
Symbol/
Description
Conditions
–3 Commercial/
Industrial
and –2× Commercial
Speed Grade
MinTyp
>8.5
Max
–3 Military
(3)
and
–4 Commercial/
Industrial Speed
Grade
MinTyp
>8.5
Max
Unit
Max
>8.5UI
>0.1>0.1>0.1UI
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Table1–eiver Jitter Specifications for Protocols by Stratix IV GT Devices (Part 2 of 2)
Symbol/
Description
Conditions
Jitter Frequency = 40KHz
Pattern = PRBS-31
Equalization = Disabled
Sinusoidal Jitter
tolerance
BER = 1E-12
Jitter Frequency 4MHz
Pattern = PRBS-31
Equalization = Disabled
BER = 1E-12
>0.05>0.05—UI
>5>5—UI
–1 Industrial Speed –2 Industrial Speed –3 Industrial Speed
GradeGradeGrade
MinTypMaxMinTypMaxMinTypMax
Unit
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum
Chapter 1:DC and Switching Characteristics for Stratix IV Devices
Switching Characteristics
Table1–uration Mode Specifications for Stratix IV Devices
Programming Mode
Remote update only in fast AS mode
Note to Table1–37:
(1)This denotes the maximum frequency supported in the FPP configuration scheme. The frequency supported for
each device may vary depending on device density. For more information, refer to the Configuration, Design
Security, and Remote System Upgrades in Stratix IV Devices chapter.
DCLK F
MAX
Min
4.3
Typ
5.3
Max
10
Unit
MHz
Table1–38 lists the JTAG timing parameters and values for Stratix IV devices.
Table1– Timing Parameters and Values for Stratix IV Devices
Symbol
t
JCP
t
JCH
t
JCL
t
JPSU (TDI)
t
JPSU (TMS)
t
JPH
t
JPCO
t
JPZX
t
JPXZ
Description
TCK clock period
TCK clock high time
TCK clock low time
TDI JTAG port setup time
TMS JTAG port setup time
JTAG port hold time
JTAG port clock to output
JTAG port high impedance to valid output
JTAG port valid output to high impedance
Min
30
14
14
1
3
5
—
—
—
Max
—
—
—
—
—
—
11
(1)
14
(1)
14
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note to Table1–38:
(1)A 1 ns adder is required for each V
CCIO
voltage step down from 3.0 V. For example, t
JPCO
= 12 ns if V
CCIO
of the TDO
I/O bank = 2.5 V, or 13 ns if it equals 1.8 V.
Temperature Sensing Diode Specifications
Table1–39 lists the specifications for the Stratix IV temperature sensing diode.
Table1–al Temperature Sensing Diode Specifications for StratixIV Devices
Description
I
bias
, diode source current
V
bias,
voltage across diode
Series resistance
Diode ideality factor
Min
8
0.3
—
1.026
Typ
—
—
—
1.028
Max
500
0.9
< 5
1.030
Unit
A
V
—
Table1–40 lists the specifications for the Stratix IV internal temperature sensing diode.
Table1–al Temperature Sensing Diode Specifications for StratixIV Devices
Temperature
Accuracy
Range
–40 to 100°C±8°C
Offset Calibrated
Option
No
Sampling Rate
Frequency:
500kHz, 1MHz
Conversion
Time
<100ms
Resolution
8bits
Minimum Resolution
with No Missing Codes
8bits
Stratix IV Device Handbook
Volume 4: Device Datasheet and Addendum