2024年4月3日发(作者：长怀薇)
SPTECHSiliconPNPPowerTransistor2SA1941
DESCRIPTION
·LowCollectorSaturationVoltage-
:V
CE(sat)
=-2.0V(Min)@I
C
=-7A
·GoodLinearityofh
FE
·ComplementtoType2SC5198
APPLICATIONS
·Poweramplifierapplications
·Recommendfor70Whighfidelityaudiofrequency
amplifieroutputstageapplications
ABSOLUTEMAXIMUMRATINGS(T
a
=25
℃)
SYMBOLPARAMETERVALUEUNIT
V
CBO
Collector-BaseVoltage-140V
V
CEO
Collector-EmitterVoltage-140V
V
EBO
Emitter-BaseVoltage-5
V
I
C
CollectorCurrent-Continuous-10A
I
B
BaseCurrent-Continuous
CollectorPowerDissipation
@T
C
=25℃
JunctionTemperature
-1A
P
C
100W
T
J
150℃
T
stg
StorageTemperatureRange-55~150
℃
1
SPTECH 2SA1941
SPTECHSiliconPNPPowerTransistor
ELECTRICALCHARACTERISTICS
T
C
=25℃unlessotherwisespecified
SYMBOL
V
(BR)CEO
PARAMETER
Collector-EmitterBreakdownVoltage
CONDITIONS
I
C
=-50mA;I
B
=0
MIN
-140
2SA1941
T
V
V
CE
(sat)
Collector-EmitterSaturationVoltageI
C
=-7.0A;I
B
=-0.7A-2.0V
V
BE(
on
)
I
CBO
Base-EmitterOnVoltageI
C
=-5A;V
CE
=-5V-1.5V
CollectorCutoffCurrentV
CB
=-140V;I
E
=0-5μA
I
EBO
EmitterCutoffCurrentV
EB
=-5V;I
C
=0-5μA
h
FE-1
DCCurrentGainI
C
=-1A;V
CE
=-5V55160
h
FE-2
DCCurrentGainI
C
=-5A;V
CE
=-5V35
C
OB
OutputCapacitanceI
E
=0;V
CB
=-10V;f
test
=1.0MHz320pF
f
T
Current-Gain—BandwidthProductI
C
=-1A;V
CE
=-5V30MHz
h
FE-1
Classifications
R
55-110
O
80-160
2
2024年4月3日发(作者：长怀薇)
SPTECHSiliconPNPPowerTransistor2SA1941
DESCRIPTION
·LowCollectorSaturationVoltage-
:V
CE(sat)
=-2.0V(Min)@I
C
=-7A
·GoodLinearityofh
FE
·ComplementtoType2SC5198
APPLICATIONS
·Poweramplifierapplications
·Recommendfor70Whighfidelityaudiofrequency
amplifieroutputstageapplications
ABSOLUTEMAXIMUMRATINGS(T
a
=25
℃)
SYMBOLPARAMETERVALUEUNIT
V
CBO
Collector-BaseVoltage-140V
V
CEO
Collector-EmitterVoltage-140V
V
EBO
Emitter-BaseVoltage-5
V
I
C
CollectorCurrent-Continuous-10A
I
B
BaseCurrent-Continuous
CollectorPowerDissipation
@T
C
=25℃
JunctionTemperature
-1A
P
C
100W
T
J
150℃
T
stg
StorageTemperatureRange-55~150
℃
1
SPTECH 2SA1941
SPTECHSiliconPNPPowerTransistor
ELECTRICALCHARACTERISTICS
T
C
=25℃unlessotherwisespecified
SYMBOL
V
(BR)CEO
PARAMETER
Collector-EmitterBreakdownVoltage
CONDITIONS
I
C
=-50mA;I
B
=0
MIN
-140
2SA1941
T
V
V
CE
(sat)
Collector-EmitterSaturationVoltageI
C
=-7.0A;I
B
=-0.7A-2.0V
V
BE(
on
)
I
CBO
Base-EmitterOnVoltageI
C
=-5A;V
CE
=-5V-1.5V
CollectorCutoffCurrentV
CB
=-140V;I
E
=0-5μA
I
EBO
EmitterCutoffCurrentV
EB
=-5V;I
C
=0-5μA
h
FE-1
DCCurrentGainI
C
=-1A;V
CE
=-5V55160
h
FE-2
DCCurrentGainI
C
=-5A;V
CE
=-5V35
C
OB
OutputCapacitanceI
E
=0;V
CB
=-10V;f
test
=1.0MHz320pF
f
T
Current-Gain—BandwidthProductI
C
=-1A;V
CE
=-5V30MHz
h
FE-1
Classifications
R
55-110
O
80-160
2