2024年10月22日发(作者：伯邃)

Absolute Maximum Ratings

Symbol

IGBT

V

CES

I

C

I

Cnom

I

CRM

I

CRM

= 3xI

Cnom

V

CC

=800V

V

GE

≤ 20V

V

CES

≤ 1200V

V

GES

t

psc

T

j

Inverse diode

I

F

I

Fnom

T

c

=25°C

T

c

=80°C

T

j

=150°C

T

j

=25°C

T

j

=175°C

T

c

=25°C

T

c

=80°C

1200

463

356

300

900

-20...20

10

-40...175

356

266

300

I

FRM

= 3xI

Fnom

t

p

=10ms, sin 180°, T

j

=25°C

900

1620

-40...175

T

c

=25°C

T

c

=80°C

356

266

300

I

FRM

= 3xI

Fnom

t

p

=10ms, sin 180°, T

j

=25°C

900

1620

-40...175

T

terminal

=80°C

AC sinus 50Hz, t=1min

600

-40...125

4000

V

A

A

A

A

V

µs

°C

A

A

A

A

A

°C

A

A

A

A

A

°C

A

°C

V

ConditionsValuesUnit

SEMiX 2s

Trench IGBT Modules

SEMiX302GAL12E4s

®

T

j

=175°C

Features

•Homogeneous Si

•Trench = Trenchgate technology

•V

CE(sat)

with positive temperature

coefficient

•High short circuit capability

•UL recognized, file no. E63532

I

FRM

I

FSM

T

j

Freewheeling diode

I

F

I

Fnom

I

FRM

I

FSM

T

j

Module

I

t(RMS)

T

stg

V

isol

T

j

=175°C

Typical Applications*

•AC inverter drives

•UPS

•Electronic Welding

Remarks

•Case temperature limited to T

C

=125°C

max.

•Product reliability results are valid for

T

j

=150°C

•Dynamic values apply to the

following combination of resistors:

R

Gon,main

= 0,5 

R

Goff,main

= 0,5 

R

G,X

= 2,2 

R

E,X

= 0,5 

Characteristics

Symbol

IGBT

V

CE(sat)

I

C

=300A

V

GE

=15V

chiplevel

chiplevel

V

GE

=15V

chiplevel

V

GE

=0V

V

CE

=1200V

V

CE

=25V

V

GE

=0V

V

GE

=- + 15 V

T

j

=25°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

5

T

j

=25°C

T

j

=150°C

f=1MHz

f=1MHz

f=1MHz

18.6

1.16

1.02

1700

2.50

1.8

2.2

0.8

0.7

3.3

5.0

5.8

2.05

2.4

0.9

0.8

3.8

5.3

6.5

4.0

V

V

V

V

m

m

V

mA

mA

nF

nF

nF

nC



V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q

G

R

Gint

V

GE

=V

CE

, I

C

=12mA

GAL

1

Characteristics

Symbol

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

Conditions

V

CC

=600V

I

C

=300A

V

GE

=±15V

R

G on

=1.9

R

G off

=1.9

di/dt

on

=5000A/µs

di/dt

off

=2800A/µs

per IGBT

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

.

282

60

30

564

117

44

ns

ns

mJ

ns

ns

mJ

SEMiX

®

2s

Trench IGBT Modules

SEMiX302GAL12E4s

R

th(j-c)

0.096

2.1

2.1

1.1

0.7

2.2

3.3

1.3

0.9

2.8

3.9

230

50

19

0.17

2.1

2.1

1.1

0.7

2.2

3.3

1.3

0.9

2.8

3.9

230

50

19

0.17

18

2.46

2.4

1.5

1.1

3.2

4.3

2.46

2.4

1.5

1.1

3.2

4.3

K/W

V

V

V

V

m

m

A

µC

mJ

K/W

V

V

V

V

m

m

A

µC

mJ

K/W

nH

m

m

K/W

Inverse diode

V

F

= V

EC

I

F

=300A

V

GE

=0V

chiplevel

V

F0

chiplevel

r

F

I

RRM

Q

rr

E

rr

R

th(j-c)

chiplevel

Features

•Homogeneous Si

•Trench = Trenchgate technology

•V

CE(sat)

with positive temperature

coefficient

•High short circuit capability

•UL recognized, file no. E63532

I

F

=300A

T

j

=150°C

di/dt

off

=4300A/µs

T=150°C

j

V

GE

=-15V

T

j

=150°C

V

CC

=600V

per diode

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

Typical Applications*

•AC inverter drives

•UPS

•Electronic Welding

Freewheeling diode

V

F

= V

EC

I

F

=300A

V

GE

=0V

chiplevel

V

F0

chiplevel

r

F

I

RRM

Q

rr

E

rr

R

th(j-c)

Module

L

CE

R

CC'+EE'

R

th(c-s)

M

s

M

t

w

Temperature Sensor

R

100

B

100/125

res., terminal-chip

per module

to heat sink (M5)

chiplevel

Remarks

•Case temperature limited to T

C

=125°C

max.

•Product reliability results are valid for

T

j

=150°C

•Dynamic values apply to the

following combination of resistors:

R

Gon,main

= 0,5 

R

Goff,main

= 0,5 

R

G,X

= 2,2 

R

E,X

= 0,5 

I

F

=300A

T

j

=150°C

di/dt

off

=4300A/µs

T=150°C

j

V

GE

=-15V

T

j

=150°C

V

CC

=600V

per diode

T

C

=25°C

T

C

=125°C

3

to terminals (M6)

2.5

0.7

1

0.045

5

5

250

Nm

Nm

Nm

g



K

T

c

=100°C (R

25

=5 k)

R

(T)

=R

100

exp[B

100/125

(1/T-1/T

100

)]; T[K];

493 ± 5%

3550

±2%

GAL

2

Fig. 1: Typ. output characteristic, inclusive R

CC'+ EE'

Fig. 2: Rated current vs. temperature I

C

= f (T

C

)

Fig. 3: Typ. turn-on /-off energy = f (I

C

)Fig. 4: Typ. turn-on /-off energy = f (R

G

)

Fig. 5: Typ. transfer characteristicFig. 6: Typ. gate charge characteristic

3

Fig. 7: Typ. switching times vs. I

C

Fig. 8: Typ. switching times vs. gate resistor R

G

Fig. 9: Typ. transient thermal impedanceFig. 10: Typ. CAL diode forward charact., incl. R

CC'+ EE'

Fig. 11: Typ. CAL diode peak reverse recovery currentFig. 12: Typ. CAL diode recovery charge

4

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested

for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is

subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

5

2024年10月22日发(作者：伯邃)

Absolute Maximum Ratings

Symbol

IGBT

V

CES

I

C

I

Cnom

I

CRM

I

CRM

= 3xI

Cnom

V

CC

=800V

V

GE

≤ 20V

V

CES

≤ 1200V

V

GES

t

psc

T

j

Inverse diode

I

F

I

Fnom

T

c

=25°C

T

c

=80°C

T

j

=150°C

T

j

=25°C

T

j

=175°C

T

c

=25°C

T

c

=80°C

1200

463

356

300

900

-20...20

10

-40...175

356

266

300

I

FRM

= 3xI

Fnom

t

p

=10ms, sin 180°, T

j

=25°C

900

1620

-40...175

T

c

=25°C

T

c

=80°C

356

266

300

I

FRM

= 3xI

Fnom

t

p

=10ms, sin 180°, T

j

=25°C

900

1620

-40...175

T

terminal

=80°C

AC sinus 50Hz, t=1min

600

-40...125

4000

V

A

A

A

A

V

µs

°C

A

A

A

A

A

°C

A

A

A

A

A

°C

A

°C

V

ConditionsValuesUnit

SEMiX 2s

Trench IGBT Modules

SEMiX302GAL12E4s

®

T

j

=175°C

Features

•Homogeneous Si

•Trench = Trenchgate technology

•V

CE(sat)

with positive temperature

coefficient

•High short circuit capability

•UL recognized, file no. E63532

I

FRM

I

FSM

T

j

Freewheeling diode

I

F

I

Fnom

I

FRM

I

FSM

T

j

Module

I

t(RMS)

T

stg

V

isol

T

j

=175°C

Typical Applications*

•AC inverter drives

•UPS

•Electronic Welding

Remarks

•Case temperature limited to T

C

=125°C

max.

•Product reliability results are valid for

T

j

=150°C

•Dynamic values apply to the

following combination of resistors:

R

Gon,main

= 0,5 

R

Goff,main

= 0,5 

R

G,X

= 2,2 

R

E,X

= 0,5 

Characteristics

Symbol

IGBT

V

CE(sat)

I

C

=300A

V

GE

=15V

chiplevel

chiplevel

V

GE

=15V

chiplevel

V

GE

=0V

V

CE

=1200V

V

CE

=25V

V

GE

=0V

V

GE

=- + 15 V

T

j

=25°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

5

T

j

=25°C

T

j

=150°C

f=1MHz

f=1MHz

f=1MHz

18.6

1.16

1.02

1700

2.50

1.8

2.2

0.8

0.7

3.3

5.0

5.8

2.05

2.4

0.9

0.8

3.8

5.3

6.5

4.0

V

V

V

V

m

m

V

mA

mA

nF

nF

nF

nC



V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q

G

R

Gint

V

GE

=V

CE

, I

C

=12mA

GAL

1

Characteristics

Symbol

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

Conditions

V

CC

=600V

I

C

=300A

V

GE

=±15V

R

G on

=1.9

R

G off

=1.9

di/dt

on

=5000A/µs

di/dt

off

=2800A/µs

per IGBT

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

T

j

=150°C

.

282

60

30

564

117

44

ns

ns

mJ

ns

ns

mJ

SEMiX

®

2s

Trench IGBT Modules

SEMiX302GAL12E4s

R

th(j-c)

0.096

2.1

2.1

1.1

0.7

2.2

3.3

1.3

0.9

2.8

3.9

230

50

19

0.17

2.1

2.1

1.1

0.7

2.2

3.3

1.3

0.9

2.8

3.9

230

50

19

0.17

18

2.46

2.4

1.5

1.1

3.2

4.3

2.46

2.4

1.5

1.1

3.2

4.3

K/W

V

V

V

V

m

m

A

µC

mJ

K/W

V

V

V

V

m

m

A

µC

mJ

K/W

nH

m

m

K/W

Inverse diode

V

F

= V

EC

I

F

=300A

V

GE

=0V

chiplevel

V

F0

chiplevel

r

F

I

RRM

Q

rr

E

rr

R

th(j-c)

chiplevel

Features

•Homogeneous Si

•Trench = Trenchgate technology

•V

CE(sat)

with positive temperature

coefficient

•High short circuit capability

•UL recognized, file no. E63532

I

F

=300A

T

j

=150°C

di/dt

off

=4300A/µs

T=150°C

j

V

GE

=-15V

T

j

=150°C

V

CC

=600V

per diode

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

T

j

=25°C

T

j

=150°C

Typical Applications*

•AC inverter drives

•UPS

•Electronic Welding

Freewheeling diode

V

F

= V

EC

I

F

=300A

V

GE

=0V

chiplevel

V

F0

chiplevel

r

F

I

RRM

Q

rr

E

rr

R

th(j-c)

Module

L

CE

R

CC'+EE'

R

th(c-s)

M

s

M

t

w

Temperature Sensor

R

100

B

100/125

res., terminal-chip

per module

to heat sink (M5)

chiplevel

Remarks

•Case temperature limited to T

C

=125°C

max.

•Product reliability results are valid for

T

j

=150°C

•Dynamic values apply to the

following combination of resistors:

R

Gon,main

= 0,5 

R

Goff,main

= 0,5 

R

G,X

= 2,2 

R

E,X

= 0,5 

I

F

=300A

T

j

=150°C

di/dt

off

=4300A/µs

T=150°C

j

V

GE

=-15V

T

j

=150°C

V

CC

=600V

per diode

T

C

=25°C

T

C

=125°C

3

to terminals (M6)

2.5

0.7

1

0.045

5

5

250

Nm

Nm

Nm

g



K

T

c

=100°C (R

25

=5 k)

R

(T)

=R

100

exp[B

100/125

(1/T-1/T

100

)]; T[K];

493 ± 5%

3550

±2%

GAL

2

Fig. 1: Typ. output characteristic, inclusive R

CC'+ EE'

Fig. 2: Rated current vs. temperature I

C

= f (T

C

)

Fig. 3: Typ. turn-on /-off energy = f (I

C

)Fig. 4: Typ. turn-on /-off energy = f (R

G

)

Fig. 5: Typ. transfer characteristicFig. 6: Typ. gate charge characteristic

3

Fig. 7: Typ. switching times vs. I

C

Fig. 8: Typ. switching times vs. gate resistor R

G

Fig. 9: Typ. transient thermal impedanceFig. 10: Typ. CAL diode forward charact., incl. R

CC'+ EE'

Fig. 11: Typ. CAL diode peak reverse recovery currentFig. 12: Typ. CAL diode recovery charge

4

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested

for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is

subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

5