2024年4月13日发(作者：敬兰英)
V
CES
Low V
CE(sat)
IGBT
High speed IGBT
IXGH/IXGM
20
N60
IXGH/IXGM
20
N60A
600 V
600 V
I
C25
40 A
40 A
V
CE(sat)
2.5 V
3.0 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 82 Ω
Clamped inductive load, L = 100 µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
40
20
80
I
CM
= 40
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Mounting torque (M3) 1.13/10Nm/.
TO-204 = 18 g, TO-247 = 6 g
300°CMaximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
20N60
20N60A
2.5
3.0
V
V
µA
mA
nA
V
V
Features
International standard packages
2nd generation HDMOS
TM
process
Low V
CE(sat)
-for low on-state conduction losses
High current handling capability
MOS Gate turn-on
-drive simplicity
Voltage rating guaranteed at high
temperature (125°C)
l
l
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250 µA, V
GE
= 0 V
= 250 µA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= ±20 V
I
C
= I
C90
, V
GE
= 15 V
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
l
l
l
l
l
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
© 1996 IXYS All rights reserved
91511F (3/96)
/
IXGH 20N60IXGM 20N60
IXGH 20N60AIXGM 20N60A
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
614
1500
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz200
40
100
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82 Ω
Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
20N60A
higher T
J
or increased R
G
20N60A
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V,
L = 300 µH
V
CE
= 0.8 V
CES
,
R
G
= R
off
= 82 Ω
Remarks: Switching times
may increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
20
60
100
200
600
200
1.5
100
200
2
900
20N60
20N60A
20N60
20N60A
530
250
3.2
2.0
1500
2000
600
120
30
90
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.83K/W
0.25K/W
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXGH 20N60 and IXGH 20N60A characteristic curves are located on the
IXGH 20N60U1 and IXGH 20N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
/
2024年4月13日发(作者：敬兰英)
V
CES
Low V
CE(sat)
IGBT
High speed IGBT
IXGH/IXGM
20
N60
IXGH/IXGM
20
N60A
600 V
600 V
I
C25
40 A
40 A
V
CE(sat)
2.5 V
3.0 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 82 Ω
Clamped inductive load, L = 100 µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
40
20
80
I
CM
= 40
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Mounting torque (M3) 1.13/10Nm/.
TO-204 = 18 g, TO-247 = 6 g
300°CMaximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
20N60
20N60A
2.5
3.0
V
V
µA
mA
nA
V
V
Features
International standard packages
2nd generation HDMOS
TM
process
Low V
CE(sat)
-for low on-state conduction losses
High current handling capability
MOS Gate turn-on
-drive simplicity
Voltage rating guaranteed at high
temperature (125°C)
l
l
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250 µA, V
GE
= 0 V
= 250 µA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= ±20 V
I
C
= I
C90
, V
GE
= 15 V
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
l
l
l
l
l
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
© 1996 IXYS All rights reserved
91511F (3/96)
/
IXGH 20N60IXGM 20N60
IXGH 20N60AIXGM 20N60A
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
614
1500
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz200
40
100
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 82 Ω
Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
20N60A
higher T
J
or increased R
G
20N60A
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V,
L = 300 µH
V
CE
= 0.8 V
CES
,
R
G
= R
off
= 82 Ω
Remarks: Switching times
may increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
20
60
100
200
600
200
1.5
100
200
2
900
20N60
20N60A
20N60
20N60A
530
250
3.2
2.0
1500
2000
600
120
30
90
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.83K/W
0.25K/W
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXGH 20N60 and IXGH 20N60A characteristic curves are located on the
IXGH 20N60U1 and IXGH 20N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
/