2024年4月16日发(作者：寸雅辰)
Samsung
Z-SSD
SZ985
Ultra-low Latency SSD for Enterprise
and Data Centers
Brochure
1
A high-speed storage device
from the SSD technology leader
Samsung Z-SSD SZ985 offers more capacity than PRAM-based data center SSDs,
with comparable latency and higher endurance
We live in a world where new applications are continuously debuting, and Big Data, IoT, and other applications generate enormous amount of
data every day. Meanwhile, data centers are always looking for better storage architecture to manage data generated by a variety of applications.
SATA SSDs are taking the place of HDDs in datacenters and recently, high-performance NVMe SSDs are gaining momentum in premium storage
services and in storage for high-end virtual machines. However, another level of requirements for high performance storage targeting cache and
real-time data analytics is rising. Fulfilling those requirements using memory is too expensive to scale and the existing storage technology is far
below the required performance standards.
Samsung Z-SSD SZ985, a new type of performance SSD, is specially designed for enterprise applications such as Database Management Systems
(DBMS), data analysis, and cache, where high throughput and low latency are a must. It is an ultra-low latency NVMe SSD containing Samsung
Z-NAND flash memory and a next-generation NVMe controller, supporting PCIe Gen3 x 4 lanes. The SZ985 provides sequential read and write
speeds of up to 3,200 MB/s and 3,000 MB/s respectively, and is able to perform a 4 KB random read operation in 20 μs. Based on Samsung’s
innovative V-NAND technology, the SZ985 offers high capacities of up to 3.2 TB of storage
1
and high endurance of 30 Drive Writes Per Day (DWPD)
for up to five years. Thanks to its ultra-low latency, high read and write speeds, high capacity, and high endurance, the SZ985 is ready to create a new
segment in the memory and storage market.
Why Samsung SZ985?
• Ultra-low Latency: Up until now the benefits of persistent storage have come at the cost of performance because storage devices are nowhere
near as fast as modern processors and system memory. Therefore, we strive to make persistent storage media as fast as possible in order to
achieve outstanding storage performance. The SZ985 is a high-speed NAND flash memory-based storage device that boasts 99.999% read QoS
latency under 90 μs and 150 μs in 4 KB mixed random read (70%) and write (30%) at queue depths 1
2
and 16, respectively.
• Consistently high performance: Since its first SSD release to the market, Samsung has been the leader in NAND flash memory based SSD
technology. Using Samsung’s proven expertise and wealth of experiences in c utting-edge SSD technology and memory solutions, Samsung
SSDs have helped data centers operate continually at the highest performance levels. As the number one provider of NAND flash SSDs and the
manufacturer of all of its SSD components- from the raw NAND flash to the controller and firmware- Samsung ensures steady supply of NAND
flash-based high performance SZ985.
• Outstanding Performance and Endurance: Tests
3
show that the SZ985 achieves more than 30% higher sequential read and write throughput
and 4 KB random read IOPS over PRAM-based SSDs (P-SSDs). With Samsung’s V-NAND technology as its foundation, the SZ985 provides
remarkable endurance of 30 DWPD for up to five years.
• High Capacity: Based on NAND flash memory technology, the SZ985 offers up to 3.2TB disk capacities, while P-SSDs can offer only
much lower densities. This makes Samsung SZ985 better suited to enable data centers to continue to scale on their servers, decreasing the
costs of computing.
1. 1.6 TB and 3.2 TB SSD availability schedule yet to be determined.
2. Read and write latency were measured by using FIO in CentOS 7.0 and 4 KB transfer size with queue depth 1 on a random and sequential workloads of sustained state, respectively.
3. Random performance was measured using FIO on CentOS 7.0 with queue depth 32 by 16 workers and sequential performance with queue depth 32 by 16 workers.
2
2024年4月16日发(作者：寸雅辰)
Samsung
Z-SSD
SZ985
Ultra-low Latency SSD for Enterprise
and Data Centers
Brochure
1
A high-speed storage device
from the SSD technology leader
Samsung Z-SSD SZ985 offers more capacity than PRAM-based data center SSDs,
with comparable latency and higher endurance
We live in a world where new applications are continuously debuting, and Big Data, IoT, and other applications generate enormous amount of
data every day. Meanwhile, data centers are always looking for better storage architecture to manage data generated by a variety of applications.
SATA SSDs are taking the place of HDDs in datacenters and recently, high-performance NVMe SSDs are gaining momentum in premium storage
services and in storage for high-end virtual machines. However, another level of requirements for high performance storage targeting cache and
real-time data analytics is rising. Fulfilling those requirements using memory is too expensive to scale and the existing storage technology is far
below the required performance standards.
Samsung Z-SSD SZ985, a new type of performance SSD, is specially designed for enterprise applications such as Database Management Systems
(DBMS), data analysis, and cache, where high throughput and low latency are a must. It is an ultra-low latency NVMe SSD containing Samsung
Z-NAND flash memory and a next-generation NVMe controller, supporting PCIe Gen3 x 4 lanes. The SZ985 provides sequential read and write
speeds of up to 3,200 MB/s and 3,000 MB/s respectively, and is able to perform a 4 KB random read operation in 20 μs. Based on Samsung’s
innovative V-NAND technology, the SZ985 offers high capacities of up to 3.2 TB of storage
1
and high endurance of 30 Drive Writes Per Day (DWPD)
for up to five years. Thanks to its ultra-low latency, high read and write speeds, high capacity, and high endurance, the SZ985 is ready to create a new
segment in the memory and storage market.
Why Samsung SZ985?
• Ultra-low Latency: Up until now the benefits of persistent storage have come at the cost of performance because storage devices are nowhere
near as fast as modern processors and system memory. Therefore, we strive to make persistent storage media as fast as possible in order to
achieve outstanding storage performance. The SZ985 is a high-speed NAND flash memory-based storage device that boasts 99.999% read QoS
latency under 90 μs and 150 μs in 4 KB mixed random read (70%) and write (30%) at queue depths 1
2
and 16, respectively.
• Consistently high performance: Since its first SSD release to the market, Samsung has been the leader in NAND flash memory based SSD
technology. Using Samsung’s proven expertise and wealth of experiences in c utting-edge SSD technology and memory solutions, Samsung
SSDs have helped data centers operate continually at the highest performance levels. As the number one provider of NAND flash SSDs and the
manufacturer of all of its SSD components- from the raw NAND flash to the controller and firmware- Samsung ensures steady supply of NAND
flash-based high performance SZ985.
• Outstanding Performance and Endurance: Tests
3
show that the SZ985 achieves more than 30% higher sequential read and write throughput
and 4 KB random read IOPS over PRAM-based SSDs (P-SSDs). With Samsung’s V-NAND technology as its foundation, the SZ985 provides
remarkable endurance of 30 DWPD for up to five years.
• High Capacity: Based on NAND flash memory technology, the SZ985 offers up to 3.2TB disk capacities, while P-SSDs can offer only
much lower densities. This makes Samsung SZ985 better suited to enable data centers to continue to scale on their servers, decreasing the
costs of computing.
1. 1.6 TB and 3.2 TB SSD availability schedule yet to be determined.
2. Read and write latency were measured by using FIO in CentOS 7.0 and 4 KB transfer size with queue depth 1 on a random and sequential workloads of sustained state, respectively.
3. Random performance was measured using FIO on CentOS 7.0 with queue depth 32 by 16 workers and sequential performance with queue depth 32 by 16 workers.
2