2024年5月2日发(作者：称访文)
QFN
Package
SC70
Package
INA199A1,INA199B1
INA199A2,INA199B2
INA199A3,INA199B3
SBOS469C–MAY2009–
VoltageOutput,HighorLowSideMeasurement,Bi-DirectionalZerø-DriftSeries
CURRENTSHUNTMONITOR
CheckforSamples:INA199A1,INA199B1,INA199A2,INA199B2,INA199A3,INA199B3
FEATURES
WIDECOMMON-MODERANGE:–0.3Vto26V
OFFSETVOLTAGE:±150μV(Max)
(Enablesshuntdropsof10mVfull-scale)
ACCURACY
–±1.5%GainError(Maxovertemperature)
–0.5μV/°COffsetDrift(Max)
–10ppm/°CGainDrift(Max)
CHOICEOFGAINS:
–INA199A1/B1:50V/V
–INA199A2/B2:100V/V
–INA199A3/B3:200V/V
QUIESCENTCURRENT:100μA(max)
PACKAGES:SC70,THINQFN-10
DESCRIPTION
TheINA199seriesofvoltageoutputcurrentshunt
monitorscansensedropsacrossshuntsatcommon-
modevoltagesfrom–0.3Vto26V,independentofthe
ixedgainsareavailable:
50V/V,100V/V,and200V/offsetofthe
Zerø-Driftarchitectureenablescurrentsensingwith
maximumdropsacrosstheshuntaslowas10mV
full-scale.
Thesedevicesoperatefromasingle+2.7Vto+26V
powersupply,drawingamaximumof100μAof
sionsarespecifiedfrom–40°C
to+105°C,andofferedinbothSC70andthinQFN-
10packages.
PRODUCTFAMILYTABLE
PRODUCT
INA199A1/B1
INA199A2/B2
INA199A3/B3
GAIN
50
100
200
R
3
ANDR
4
20kΩ
10kΩ
5kΩ
R
1
ANDR
2
1MΩ
1MΩ
1MΩ
•
•
•
•
•
•
APPLICATIONS
•
•
•
•
•
•
NOTEBOOKCOMPUTERS
CELLPHONES
TELECOMEQUIPMENT
POWERMANAGEMENT
BATTERYCHARGERS
WELDINGEQUIPMENT
Reference
Voltage
Supply
R
SHUNT
Load
REF
OUT
Output
GND
R
1
R
3
IN-
+2.7V to +26V
C
BYPASS
0.01mF
to
0.1mF
V+
R
2
R
4
IN+
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof
TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
Alltrademarksarethepropertyoftheirrespectiveowners.
Copyright©2009–2012,TexasInstrumentsIncorporated
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexas
tionprocessingdoesnot
necessarilyincludetestingofallparameters.
/
INA199A1,INA199B1
INA199A2,INA199B2
INA199A3,INA199B3
SBOS469C–MAY2009–
nstrumentsrecommendsthatallintegratedcircuitsbehandledwith
etoobserveproperhandlingandinstallationprocedurescancausedamage.
ESDdamageionintegratedcircuitsmaybemore
susceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.
PACKAGEINFORMATION
(1)
PRODUCT
INA199A1
INA199B1
INA199A2
INA199B2
INA199A3
INA199B3
(1)
GAIN
50V/V
50V/V
100V/V
100V/V
200V/V
200V/V
PACKAGE-LEAD
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
PACKAGE
DESIGNATOR
DCK
RSW
DCK
RSW
DCK
RSW
DCK
RSW
DCK
RSW
DCK
RSW
PACKAGEMARKING
OBG
NSJ
SEB
SHV
OBH
NTJ
SEG
SHW
OBI
NUJ
SHE
SHX
ForthemostcurrentpackageandorderinginformationseethePackageOptionAddendumattheendofthisdocument,orseetheTI
.
ABSOLUTEMAXIMUMRATINGS
(1)
Overoperatingfree-airtemperaturerange,unlessotherwisenoted.
VALUE
SupplyVoltage
AnalogInputs,
V
IN+
,V
IN–
(2)
REFInput
Output
(3)
InputCurrentIntoAllPins
(3)
OperatingTemperature
StorageTemperature
JunctionTemperature
HumanBodyModel(HBM)
ESDRatings:
(versionA)
Charged-DeviceModel(CDM)
MachineModel(MM)
HumanBodyModel(HBM)
ESDRatings:
(versionB)
Charged-DeviceModel(CDM)
MachineModel(MM)
(1)
(2)
(3)
Differential(V
IN+
)–(V
IN–
)
Common-mode
(3)
+26
–26to+26
GND–0.3to+26
GND–0.3to(V+)+0.3
GND–0.3to(V+)+0.3
5
–40to+125
–65to+150
+150
4000
1000
200
1500
1000
100
UNIT
V
V
V
V
V
mA
°C
°C
°C
V
V
V
V
V
V
retoabsolutemaximumconditionsforextendedperiodsmay
restressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyond
thosespecifiedisnotimplied.
V
IN+
andV
IN–
arethevoltagesattheIN+andIN–pins,respectively.
Inputvoltageatanypinmayexceedthevoltageshownifthecurrentatthatpinislimitedto5mA.
2
Copyright©2009–2012,TexasInstrumentsIncorporated
/
2024年5月2日发(作者：称访文)
QFN
Package
SC70
Package
INA199A1,INA199B1
INA199A2,INA199B2
INA199A3,INA199B3
SBOS469C–MAY2009–
VoltageOutput,HighorLowSideMeasurement,Bi-DirectionalZerø-DriftSeries
CURRENTSHUNTMONITOR
CheckforSamples:INA199A1,INA199B1,INA199A2,INA199B2,INA199A3,INA199B3
FEATURES
WIDECOMMON-MODERANGE:–0.3Vto26V
OFFSETVOLTAGE:±150μV(Max)
(Enablesshuntdropsof10mVfull-scale)
ACCURACY
–±1.5%GainError(Maxovertemperature)
–0.5μV/°COffsetDrift(Max)
–10ppm/°CGainDrift(Max)
CHOICEOFGAINS:
–INA199A1/B1:50V/V
–INA199A2/B2:100V/V
–INA199A3/B3:200V/V
QUIESCENTCURRENT:100μA(max)
PACKAGES:SC70,THINQFN-10
DESCRIPTION
TheINA199seriesofvoltageoutputcurrentshunt
monitorscansensedropsacrossshuntsatcommon-
modevoltagesfrom–0.3Vto26V,independentofthe
ixedgainsareavailable:
50V/V,100V/V,and200V/offsetofthe
Zerø-Driftarchitectureenablescurrentsensingwith
maximumdropsacrosstheshuntaslowas10mV
full-scale.
Thesedevicesoperatefromasingle+2.7Vto+26V
powersupply,drawingamaximumof100μAof
sionsarespecifiedfrom–40°C
to+105°C,andofferedinbothSC70andthinQFN-
10packages.
PRODUCTFAMILYTABLE
PRODUCT
INA199A1/B1
INA199A2/B2
INA199A3/B3
GAIN
50
100
200
R
3
ANDR
4
20kΩ
10kΩ
5kΩ
R
1
ANDR
2
1MΩ
1MΩ
1MΩ
•
•
•
•
•
•
APPLICATIONS
•
•
•
•
•
•
NOTEBOOKCOMPUTERS
CELLPHONES
TELECOMEQUIPMENT
POWERMANAGEMENT
BATTERYCHARGERS
WELDINGEQUIPMENT
Reference
Voltage
Supply
R
SHUNT
Load
REF
OUT
Output
GND
R
1
R
3
IN-
+2.7V to +26V
C
BYPASS
0.01mF
to
0.1mF
V+
R
2
R
4
IN+
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof
TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
Alltrademarksarethepropertyoftheirrespectiveowners.
Copyright©2009–2012,TexasInstrumentsIncorporated
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexas
tionprocessingdoesnot
necessarilyincludetestingofallparameters.
/
INA199A1,INA199B1
INA199A2,INA199B2
INA199A3,INA199B3
SBOS469C–MAY2009–
nstrumentsrecommendsthatallintegratedcircuitsbehandledwith
etoobserveproperhandlingandinstallationprocedurescancausedamage.
ESDdamageionintegratedcircuitsmaybemore
susceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.
PACKAGEINFORMATION
(1)
PRODUCT
INA199A1
INA199B1
INA199A2
INA199B2
INA199A3
INA199B3
(1)
GAIN
50V/V
50V/V
100V/V
100V/V
200V/V
200V/V
PACKAGE-LEAD
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
SC70-6
ThinQFN-10
PACKAGE
DESIGNATOR
DCK
RSW
DCK
RSW
DCK
RSW
DCK
RSW
DCK
RSW
DCK
RSW
PACKAGEMARKING
OBG
NSJ
SEB
SHV
OBH
NTJ
SEG
SHW
OBI
NUJ
SHE
SHX
ForthemostcurrentpackageandorderinginformationseethePackageOptionAddendumattheendofthisdocument,orseetheTI
.
ABSOLUTEMAXIMUMRATINGS
(1)
Overoperatingfree-airtemperaturerange,unlessotherwisenoted.
VALUE
SupplyVoltage
AnalogInputs,
V
IN+
,V
IN–
(2)
REFInput
Output
(3)
InputCurrentIntoAllPins
(3)
OperatingTemperature
StorageTemperature
JunctionTemperature
HumanBodyModel(HBM)
ESDRatings:
(versionA)
Charged-DeviceModel(CDM)
MachineModel(MM)
HumanBodyModel(HBM)
ESDRatings:
(versionB)
Charged-DeviceModel(CDM)
MachineModel(MM)
(1)
(2)
(3)
Differential(V
IN+
)–(V
IN–
)
Common-mode
(3)
+26
–26to+26
GND–0.3to+26
GND–0.3to(V+)+0.3
GND–0.3to(V+)+0.3
5
–40to+125
–65to+150
+150
4000
1000
200
1500
1000
100
UNIT
V
V
V
V
V
mA
°C
°C
°C
V
V
V
V
V
V
retoabsolutemaximumconditionsforextendedperiodsmay
restressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyond
thosespecifiedisnotimplied.
V
IN+
andV
IN–
arethevoltagesattheIN+andIN–pins,respectively.
Inputvoltageatanypinmayexceedthevoltageshownifthecurrentatthatpinislimitedto5mA.
2
Copyright©2009–2012,TexasInstrumentsIncorporated
/