2024年5月26日发(作者：骑雨灵)
元器件交易网
July 2001
AO6800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Features
V
DS
(V) = 30V
I
D
= 3.4 A
R
DS(ON)
< 60mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
R
DS(ON)
< 115mΩ (V
GS
= 2.5V)
TSOP6
Top View
G1
S2
G2
1
6
25
34
D1
S1
D2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
ParameterSymbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
30
±12
3.4
2.7
20
1.15
0.73
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°CI
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Characteristics each FET
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
元器件交易网
AO6800
Electrical Characteristics (T
J
=25°C unless otherwise noted)
SymbolParameterConditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=3.4A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=3A
V
GS
=2.5V, I
D
=2A
Forward TransconductanceV
DS
=5V, I
D
=3A
Diode Forward VoltageI
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
0.6
20
50
66
60
88
7.8
0.8
60
80
75
115
1
1.5
1
Min
30
1
5
100
1.4
TypMaxUnits
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
390
54.5
41
3
4.96
0.8
1.72
6.8
3.6
35.2
13.7
11.4
6
V
GS
=4.5V, V
DS
=15V, I
D
=3.4A
V
GS
=10V, V
DS
=15V, R
L
=4.7Ω,
R
GEN
=6Ω
I
F
=3.4A, dI/dt=100A/µs
I
F
=3.4A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
元器件交易网
AO6800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
3V
4.5V
9
)
A
(
D
I
2.5V
6
3
V
GS
=2V
0
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics
150
125
V
GS
=2.5V
)
Ω
100
m
(
)
V
N
GS
=4.5V
O
75
(
S
D
R
50
V
GS
=10V
25
0
0246810
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
200
150
I
D
=2A
)
Ω
m
(
)
N
100
125°C
O
(
S
D
R
50
25°C
0
0246810
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
10
8
V
DS
=5V
25°C
6
125°C
)
A
(
D
I
4
2
0
00.511.522.533.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
e
c
n
1.6
a
V
GS
=4.5V
t
s
i
s
e
R
1.4
V
GS
=10V
-
n
O
d
e
z
1.2
V
i
GS
=2.5V
l
a
m
r
o
N
1
0.8
5150175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
)
125°C
A
(
S
1.0E-02
I
1.0E-03
25°C
1.0E-04
1.0E-05
0.00.20.40.60.81.01.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
元器件交易网
AO6800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
G
S
(
V
o
l
t
s
)
3
2
1
0
0123456
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=3.4A
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
600
500
C
iss
400
300
200
100
0
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
10µs
100µs
1ms
0.1s
10ms
1s
10s
DC
P
o
w
e
r
(
W
)
20
T
J(Max)
=150°C
T
A
=25°C
15
10.0
I
D
(
A
m
p
s
)
10
1.0
5
0.1
0.11
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10100
0
0.0010.010.
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
J
A
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.000010.00010.0010.010.
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
元器件交易网
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
θ
A
A1
A2
b
c
D
E
E1
e
e1
L
θ1
MIN
1.00
0.00
1.00
0.35
0.10
2.70
2.60
1.60
0.37
1°
NOM
−−−
−−−
1.10
0.40
0.13
2.90
2.80
1.80
0.95 BSC
1.90 BSC
−−−
5°
MAX
1.25
0.10
1.15
0.50
0.20
3.10
3.00
2.00
−−−
8°
PACKAGE MARKING DESCRIPTION
S
E
A
T
I
N
G
P
L
A
N
E
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
G
A
U
G
E
P
L
A
N
E
RECOMMENDED LAND PATTERN
TSOP-6 PART NO. CODE
PART NO.
AO6800
CODE
H0
NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.
元器件交易网
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Carrier Tape
TSOP-6 Tape and Reel Data
TSOP-6 Reel
TSOP-6 Tape
Leader / Trailer
& Orientation
2024年5月26日发(作者：骑雨灵)
元器件交易网
July 2001
AO6800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Features
V
DS
(V) = 30V
I
D
= 3.4 A
R
DS(ON)
< 60mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
R
DS(ON)
< 115mΩ (V
GS
= 2.5V)
TSOP6
Top View
G1
S2
G2
1
6
25
34
D1
S1
D2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
ParameterSymbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
30
±12
3.4
2.7
20
1.15
0.73
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°CI
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Characteristics each FET
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
元器件交易网
AO6800
Electrical Characteristics (T
J
=25°C unless otherwise noted)
SymbolParameterConditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=3.4A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=3A
V
GS
=2.5V, I
D
=2A
Forward TransconductanceV
DS
=5V, I
D
=3A
Diode Forward VoltageI
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
0.6
20
50
66
60
88
7.8
0.8
60
80
75
115
1
1.5
1
Min
30
1
5
100
1.4
TypMaxUnits
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
390
54.5
41
3
4.96
0.8
1.72
6.8
3.6
35.2
13.7
11.4
6
V
GS
=4.5V, V
DS
=15V, I
D
=3.4A
V
GS
=10V, V
DS
=15V, R
L
=4.7Ω,
R
GEN
=6Ω
I
F
=3.4A, dI/dt=100A/µs
I
F
=3.4A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
元器件交易网
AO6800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
3V
4.5V
9
)
A
(
D
I
2.5V
6
3
V
GS
=2V
0
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics
150
125
V
GS
=2.5V
)
Ω
100
m
(
)
V
N
GS
=4.5V
O
75
(
S
D
R
50
V
GS
=10V
25
0
0246810
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
200
150
I
D
=2A
)
Ω
m
(
)
N
100
125°C
O
(
S
D
R
50
25°C
0
0246810
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
10
8
V
DS
=5V
25°C
6
125°C
)
A
(
D
I
4
2
0
00.511.522.533.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
e
c
n
1.6
a
V
GS
=4.5V
t
s
i
s
e
R
1.4
V
GS
=10V
-
n
O
d
e
z
1.2
V
i
GS
=2.5V
l
a
m
r
o
N
1
0.8
5150175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
)
125°C
A
(
S
1.0E-02
I
1.0E-03
25°C
1.0E-04
1.0E-05
0.00.20.40.60.81.01.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
元器件交易网
AO6800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
G
S
(
V
o
l
t
s
)
3
2
1
0
0123456
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=3.4A
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
600
500
C
iss
400
300
200
100
0
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
10µs
100µs
1ms
0.1s
10ms
1s
10s
DC
P
o
w
e
r
(
W
)
20
T
J(Max)
=150°C
T
A
=25°C
15
10.0
I
D
(
A
m
p
s
)
10
1.0
5
0.1
0.11
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10100
0
0.0010.010.
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
J
A
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.000010.00010.0010.010.
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
元器件交易网
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
θ
A
A1
A2
b
c
D
E
E1
e
e1
L
θ1
MIN
1.00
0.00
1.00
0.35
0.10
2.70
2.60
1.60
0.37
1°
NOM
−−−
−−−
1.10
0.40
0.13
2.90
2.80
1.80
0.95 BSC
1.90 BSC
−−−
5°
MAX
1.25
0.10
1.15
0.50
0.20
3.10
3.00
2.00
−−−
8°
PACKAGE MARKING DESCRIPTION
S
E
A
T
I
N
G
P
L
A
N
E
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
G
A
U
G
E
P
L
A
N
E
RECOMMENDED LAND PATTERN
TSOP-6 PART NO. CODE
PART NO.
AO6800
CODE
H0
NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.
元器件交易网
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Carrier Tape
TSOP-6 Tape and Reel Data
TSOP-6 Reel
TSOP-6 Tape
Leader / Trailer
& Orientation