2024年5月27日发(作者：鄞泽)
NST3906DP6T5G
Dual General Purpose
Transistor
The NST3906DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
h
FE
, 100−300
Low V
CE(sat)
, ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
This is a Pb−Free Device
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Electrostatic DischargeHBM
MM
Symbol
V
CEO
V
CBO
V
EBO
I
C
ESD
Class
Value
−40
−40
−5.0
−200
2
B
Unit
V
V
V
mA
(3)
(2)(1)
Features
•
•
•
•
•
•
Q
1
Q
2
(4)(5)
NST3906DP6T5G
(6)
MAXIMUM RATINGS
6
5
4
1
2
3
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range
Symbol
P
D
R
q
JA
P
D
R
q
JA
Symbol
P
D
R
q
JA
P
D
R
q
JA
T
J
, T
stg
Max
240
1.9
520
280
2.2
446
Max
350
2.8
357
420
3.4
297
−55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
SOT−963
CASE 527AD
PLASTIC
MARKING DIAGRAM
1
F MG
G
F= Device Code
M= Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
mW
mW/°C
°C/W
°C
Device
NST3906DP6T5G
Package
SOT−963
(Pb−Free)
Shipping
†
8000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
−4 @ 100 mm
2
, 1 oz. copper traces, still air.
−4 @ 500 mm
2
, 1 oz. copper traces, still air.
heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2008
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
April, 2008 − Rev. 0
1Publication Order Number:
NST3906DP6/D
/
NST3906DP6T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 4) (I
C
= 1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0)
Emitter−Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
−40
−40
−5.0
−
−
−
−
−50
V
V
V
nA
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(I
C
= −0.1 mA, V
CE
= −1.0 V)
(I
C
= −1.0 mA, V
CE
= −1.0 V)
(I
C
= −10 mA, V
CE
= −1.0 V)
(I
C
= −50 mA, V
CE
= −1.0 V)
(I
C
= −100 mA, V
CE
= −1.0 V)
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −1.0 mA)
(I
C
= −50 mA, I
B
= −5.0 mA)
Base−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −1.0 mA)
(I
C
= −50 mA, I
B
= −5.0 mA)
h
FE
−
60
80
100
60
30
−
−
−0.65
−
−
−
300
−
−
V
−0.25
−0.4
V
−0.85
−0.95
V
CE(sat)
V
BE(sat)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= −5.0 V, I
E
= 0 mA, f = 1.0 MHz)
Input Capacitance (V
EB
= −0.5 V, I
E
= 0 mA, f = 1.0 MHz)
Noise Figure (V
CE
= −5.0 V, I
C
= −100 mA, R
S
= 1.0 k Ω, f = 1.0 kHz)
f
T
C
obo
C
ibo
NF
250
−
−
−
−
4.5
10.0
4.0
MHz
pF
pF
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= −3.0 V, V
BE
= 0.5 V)
(I
C
= −10 mA, I
B1
= −1.0 mA)
(V
CC
= −3.0 V, I
C
= −10 mA)
(I
B1
= I
B2
= −1.0 mA)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
250
50
ns
ns
Test: Pulse Width ≤300 μs; Duty Cycle ≤2.0%.
0.40
V
C
E
(
s
a
t
)
,
C
O
L
L
E
C
T
O
R
−
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
V
CE(sat)
= 150°C
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
(
V
)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.0001
0.0010.010.1
I
C
, COLLECTOR CURRENT (A)
1
−55°C
25°C
I
C
/I
B
= 10
350
300
250
200
150
100
50
0
0.0001
0.001
0.010.1
I
C
, COLLECTOR CURRENT (A)
1
150°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
150°C (5.0 V)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
2
/
NST3906DP6T5G
1.1
V
B
E
(
s
a
t
)
,
B
A
S
E
−
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
150°C
0.3
0.00010.0010.010.11
25°C
V
B
E
(
o
n
)
,
B
A
S
E
−
E
M
I
T
T
E
R
T
U
R
N
−
O
N
V
O
L
T
A
G
E
(
V
)
I
C
/I
B
= 10
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
150°C
0.3
0.00010.0010.010.11
25°C
V
CE
= 2.0 V
−55°C
−55°C
I
C
, COLLECTOR CURRENT (A)I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
V
C
E
(
s
a
t
)
,
C
O
L
L
E
C
T
O
R
−
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20 mA
I
C
= 10 mA
0.00010.001
I
b
, BASE CURRENT (A)
0.01
100 mA
C
i
b
o
,
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
80 mA
60 mA
40 mA
9.0
8.0
7.0
6.0
5.0
4.0
3.0
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
C
ib
00.51.01.52.02.5
3.03.5
4.04.5
5.0
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
6.0
C
o
b
o
,
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
C
ob
05.010152025
Figure 6. Input Capacitance
30
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
3
/
NST3906DP6T5G
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE B
D
A
B
4
E
12
e
6X
A
C
L
65
NOTES:
IONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
LLING DIMENSION: MILLIMETERS
M LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
H
E
MILLIMETERS
MINNOMMAX
0.340.370.40
0.100.150.20
0.070.120.17
0.951.001.05
0.750.800.85
0.35 BSC
0.050.100.15
0.951.001.05
MIN
0.004
0.003
0.037
0.03
INCHES
NOMMAX
3
C
0.08CAB
H
E
b
0.0060.008
0.0050.007
0.0390.041
0.0320.034
0.014 BSC
0.0020.0040.006
0.0370.0390.041
SOLDERING FOOTPRINT*
0.35
0.014
0.35
0.014
0.90
0.0354
0.20
0.08
0.20
0.08
SCALE 20:1
mm
Ǔǒ
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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4
NST3906DP6/D
/
分销商库存信息:
ONSEMI
NST3906DP6T5G
2024年5月27日发(作者：鄞泽)
NST3906DP6T5G
Dual General Purpose
Transistor
The NST3906DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
h
FE
, 100−300
Low V
CE(sat)
, ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
This is a Pb−Free Device
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Electrostatic DischargeHBM
MM
Symbol
V
CEO
V
CBO
V
EBO
I
C
ESD
Class
Value
−40
−40
−5.0
−200
2
B
Unit
V
V
V
mA
(3)
(2)(1)
Features
•
•
•
•
•
•
Q
1
Q
2
(4)(5)
NST3906DP6T5G
(6)
MAXIMUM RATINGS
6
5
4
1
2
3
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range
Symbol
P
D
R
q
JA
P
D
R
q
JA
Symbol
P
D
R
q
JA
P
D
R
q
JA
T
J
, T
stg
Max
240
1.9
520
280
2.2
446
Max
350
2.8
357
420
3.4
297
−55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
SOT−963
CASE 527AD
PLASTIC
MARKING DIAGRAM
1
F MG
G
F= Device Code
M= Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
mW
mW/°C
°C/W
°C
Device
NST3906DP6T5G
Package
SOT−963
(Pb−Free)
Shipping
†
8000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
−4 @ 100 mm
2
, 1 oz. copper traces, still air.
−4 @ 500 mm
2
, 1 oz. copper traces, still air.
heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2008
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
April, 2008 − Rev. 0
1Publication Order Number:
NST3906DP6/D
/
NST3906DP6T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 4) (I
C
= 1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0)
Emitter−Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
−40
−40
−5.0
−
−
−
−
−50
V
V
V
nA
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(I
C
= −0.1 mA, V
CE
= −1.0 V)
(I
C
= −1.0 mA, V
CE
= −1.0 V)
(I
C
= −10 mA, V
CE
= −1.0 V)
(I
C
= −50 mA, V
CE
= −1.0 V)
(I
C
= −100 mA, V
CE
= −1.0 V)
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −1.0 mA)
(I
C
= −50 mA, I
B
= −5.0 mA)
Base−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −1.0 mA)
(I
C
= −50 mA, I
B
= −5.0 mA)
h
FE
−
60
80
100
60
30
−
−
−0.65
−
−
−
300
−
−
V
−0.25
−0.4
V
−0.85
−0.95
V
CE(sat)
V
BE(sat)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= −5.0 V, I
E
= 0 mA, f = 1.0 MHz)
Input Capacitance (V
EB
= −0.5 V, I
E
= 0 mA, f = 1.0 MHz)
Noise Figure (V
CE
= −5.0 V, I
C
= −100 mA, R
S
= 1.0 k Ω, f = 1.0 kHz)
f
T
C
obo
C
ibo
NF
250
−
−
−
−
4.5
10.0
4.0
MHz
pF
pF
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= −3.0 V, V
BE
= 0.5 V)
(I
C
= −10 mA, I
B1
= −1.0 mA)
(V
CC
= −3.0 V, I
C
= −10 mA)
(I
B1
= I
B2
= −1.0 mA)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
250
50
ns
ns
Test: Pulse Width ≤300 μs; Duty Cycle ≤2.0%.
0.40
V
C
E
(
s
a
t
)
,
C
O
L
L
E
C
T
O
R
−
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
V
CE(sat)
= 150°C
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
(
V
)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.0001
0.0010.010.1
I
C
, COLLECTOR CURRENT (A)
1
−55°C
25°C
I
C
/I
B
= 10
350
300
250
200
150
100
50
0
0.0001
0.001
0.010.1
I
C
, COLLECTOR CURRENT (A)
1
150°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
150°C (5.0 V)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
2
/
NST3906DP6T5G
1.1
V
B
E
(
s
a
t
)
,
B
A
S
E
−
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
150°C
0.3
0.00010.0010.010.11
25°C
V
B
E
(
o
n
)
,
B
A
S
E
−
E
M
I
T
T
E
R
T
U
R
N
−
O
N
V
O
L
T
A
G
E
(
V
)
I
C
/I
B
= 10
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
150°C
0.3
0.00010.0010.010.11
25°C
V
CE
= 2.0 V
−55°C
−55°C
I
C
, COLLECTOR CURRENT (A)I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
V
C
E
(
s
a
t
)
,
C
O
L
L
E
C
T
O
R
−
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20 mA
I
C
= 10 mA
0.00010.001
I
b
, BASE CURRENT (A)
0.01
100 mA
C
i
b
o
,
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
80 mA
60 mA
40 mA
9.0
8.0
7.0
6.0
5.0
4.0
3.0
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
C
ib
00.51.01.52.02.5
3.03.5
4.04.5
5.0
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
6.0
C
o
b
o
,
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
C
ob
05.010152025
Figure 6. Input Capacitance
30
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
3
/
NST3906DP6T5G
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE B
D
A
B
4
E
12
e
6X
A
C
L
65
NOTES:
IONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
LLING DIMENSION: MILLIMETERS
M LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
H
E
MILLIMETERS
MINNOMMAX
0.340.370.40
0.100.150.20
0.070.120.17
0.951.001.05
0.750.800.85
0.35 BSC
0.050.100.15
0.951.001.05
MIN
0.004
0.003
0.037
0.03
INCHES
NOMMAX
3
C
0.08CAB
H
E
b
0.0060.008
0.0050.007
0.0390.041
0.0320.034
0.014 BSC
0.0020.0040.006
0.0370.0390.041
SOLDERING FOOTPRINT*
0.35
0.014
0.35
0.014
0.90
0.0354
0.20
0.08
0.20
0.08
SCALE 20:1
mm
Ǔǒ
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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