2024年9月29日发(作者：锐怀)

ZVP3310F

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Product Summary

BV

DSS

-100V

R

DS(ON)

max

20Ω @ V

GS

= -10V

I

D

max

-75mA

Features and Benefits















Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

An Automotive-Compliant Part is Available Under Separate

Datasheet (ZVP3310FQ)

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(R

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Load Switching

Mechanical Data













Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Weight: 0.008 grams (Approximate)

SOT23

D

D

G

G

S

Top View

S

Internal Schematic

Top View

Ordering Information

(Note 4)

Part Number

ZVP3310FTA

Case

SOT23

Packaging

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See /quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at /design/support/packaging/diodes-packaging/.

Marking Information

MR = Product Type Marking Code

ZVP3310F

Document number: DS33406 Rev. 5 - 2

1 of 5

August 2019

© Diodes Incorporated

ZVP3310F

Symbol

V

DSS

V

GSS

I

D

I

DM

I

SM

Value

-100

±20

-75

-1.2

-1.2

Unit

V

V

mA

A

A

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

Steady State

Thermal Characteristics

Characteristic

Power Dissipation (@T

A

= +25°C)

Operating and Storage Temperature Range

Symbol

P

D

T

J,

T

STG

Value

330

-55 to +150

Unit

mW

°C

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 5)

On-State Drain Current (Note 5)

Forward Transconductance (Note 5)

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes:

Symbol

BV

DSS

I

DSS

I

GSS

V

GS(TH)

R

DS(ON)

I

D(ON)

gfs

C

iss

C

oss

C

rss

t

D(ON)

t

R

t

D(OFF)

t

F

Min

-100

—

—

—

-1.5

-300

50

—

—

—

—

—

—

—

—

Typ

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Max

—

-1

-50

±20

-3.5

20

—

—

50

15

5

8

8

8

8

Unit

V

μA

μA

nA

V

Ω

mA

mS

Test Condition

V

GS

= 0V, I

D

= -1mA

V

DS

= -100V, V

GS

= 0V

V

DS

= -80V, V

GS

= 0V, T =

+125°C

V

GS

= ±20V, V

DS

= 0V

V

DS

= V

GS

, I

D

= -1mA

V

GS

= -10V, I

D

= -150mA

V

DS

= -25V, V

GS

= -10V

V

DS

= -25V, I

D

= -150mA

pF

V

DS

= -25V, V

GS

= 0V, f = 1MHz

ns

V

DD

= -25V, I

D

= -150mA

5. Measured under pulsed conditions. Width = 300ms. Duty cycle <=2%.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

ZVP3310F

Document number: DS33406 Rev. 5 - 2

2 of 5

August 2019

© Diodes Incorporated

V

GS

=

ZVP3310F

V

D

S

-

D

r

a

i

n

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

o

l

t

s

)

I

D

=

0

V

DS

=-10V

V

GS

=0V

f=1MHz

C

iss

C

oss

C

rss

Transconductance v Drain Current

Capacitance v Drain-Source Voltage

N

o

r

m

a

l

i

s

e

d

R

D

S

(

O

N

)

a

n

d

V

G

S

(

T

H

)

V

GS

=-10V

I

D

=-150mA

V

DS

=

-25V

-50V

-100V

I

D

=-0.2A

V

GS

=V

DS

I

D

=-1mA

-60

T

J

- Junction Temperature (°C)

Gate Charge v Gate-Source Voltage

Normalised R

DS(ON)

and V

GS(TH)

v Temperature

ZVP3310F

Document number: DS33406 Rev. 5 - 2

3 of 5

August 2019

© Diodes Incorporated

ZVP3310F

Package Outline Dimensions

Please see /

for the latest version.

SOT23

All 7°

H

GAUGE PLANE

0.25

K1

K

J

a

A

M

LL1

C

B

D

F

G

SOT23

Dim Min Max Typ

A

0.37 0.51 0.40

B

1.20 1.40 1.30

C

2.30 2.50 2.40

D

0.89 1.03 0.915

F

0.45 0.60 0.535

G

1.78 2.05 1.83

H

2.80 3.00 2.90

J

0.013 0.10 0.05

K

0.890 1.00 0.975

K1

0.903 1.10 1.025

L

0.45 0.61 0.55

L1

0.25 0.55 0.40

M

0.085 0.150 0.110

a

0° 8° --

All Dimensions in mm

Suggested Pad Layout

Please see /

for the latest version.

SOT23

Y

Y1

C

Dimensions Value (in mm)

C

2.0

X

0.8

X1

1.35

Y

0.9

Y1

2.9

X

X1

ZVP3310F

Document number: DS33406 Rev. 5 - 2

4 of 5

August 2019

© Diodes Incorporated

ZVP3310F

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2019, Diodes Incorporated

ZVP3310F

Document number: DS33406 Rev. 5 - 2

5 of 5

August 2019

© Diodes Incorporated

2024年9月29日发(作者：锐怀)

ZVP3310F

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Product Summary

BV

DSS

-100V

R

DS(ON)

max

20Ω @ V

GS

= -10V

I

D

max

-75mA

Features and Benefits















Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

An Automotive-Compliant Part is Available Under Separate

Datasheet (ZVP3310FQ)

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(R

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Load Switching

Mechanical Data













Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Weight: 0.008 grams (Approximate)

SOT23

D

D

G

G

S

Top View

S

Internal Schematic

Top View

Ordering Information

(Note 4)

Part Number

ZVP3310FTA

Case

SOT23

Packaging

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See /quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at /design/support/packaging/diodes-packaging/.

Marking Information

MR = Product Type Marking Code

ZVP3310F

Document number: DS33406 Rev. 5 - 2

1 of 5

August 2019

© Diodes Incorporated

ZVP3310F

Symbol

V

DSS

V

GSS

I

D

I

DM

I

SM

Value

-100

±20

-75

-1.2

-1.2

Unit

V

V

mA

A

A

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

Steady State

Thermal Characteristics

Characteristic

Power Dissipation (@T

A

= +25°C)

Operating and Storage Temperature Range

Symbol

P

D

T

J,

T

STG

Value

330

-55 to +150

Unit

mW

°C

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 5)

On-State Drain Current (Note 5)

Forward Transconductance (Note 5)

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes:

Symbol

BV

DSS

I

DSS

I

GSS

V

GS(TH)

R

DS(ON)

I

D(ON)

gfs

C

iss

C

oss

C

rss

t

D(ON)

t

R

t

D(OFF)

t

F

Min

-100

—

—

—

-1.5

-300

50

—

—

—

—

—

—

—

—

Typ

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Max

—

-1

-50

±20

-3.5

20

—

—

50

15

5

8

8

8

8

Unit

V

μA

μA

nA

V

Ω

mA

mS

Test Condition

V

GS

= 0V, I

D

= -1mA

V

DS

= -100V, V

GS

= 0V

V

DS

= -80V, V

GS

= 0V, T =

+125°C

V

GS

= ±20V, V

DS

= 0V

V

DS

= V

GS

, I

D

= -1mA

V

GS

= -10V, I

D

= -150mA

V

DS

= -25V, V

GS

= -10V

V

DS

= -25V, I

D

= -150mA

pF

V

DS

= -25V, V

GS

= 0V, f = 1MHz

ns

V

DD

= -25V, I

D

= -150mA

5. Measured under pulsed conditions. Width = 300ms. Duty cycle <=2%.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

ZVP3310F

Document number: DS33406 Rev. 5 - 2

2 of 5

August 2019

© Diodes Incorporated

V

GS

=

ZVP3310F

V

D

S

-

D

r

a

i

n

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

o

l

t

s

)

I

D

=

0

V

DS

=-10V

V

GS

=0V

f=1MHz

C

iss

C

oss

C

rss

Transconductance v Drain Current

Capacitance v Drain-Source Voltage

N

o

r

m

a

l

i

s

e

d

R

D

S

(

O

N

)

a

n

d

V

G

S

(

T

H

)

V

GS

=-10V

I

D

=-150mA

V

DS

=

-25V

-50V

-100V

I

D

=-0.2A

V

GS

=V

DS

I

D

=-1mA

-60

T

J

- Junction Temperature (°C)

Gate Charge v Gate-Source Voltage

Normalised R

DS(ON)

and V

GS(TH)

v Temperature

ZVP3310F

Document number: DS33406 Rev. 5 - 2

3 of 5

August 2019

© Diodes Incorporated

ZVP3310F

Package Outline Dimensions

Please see /

for the latest version.

SOT23

All 7°

H

GAUGE PLANE

0.25

K1

K

J

a

A

M

LL1

C

B

D

F

G

SOT23

Dim Min Max Typ

A

0.37 0.51 0.40

B

1.20 1.40 1.30

C

2.30 2.50 2.40

D

0.89 1.03 0.915

F

0.45 0.60 0.535

G

1.78 2.05 1.83

H

2.80 3.00 2.90

J

0.013 0.10 0.05

K

0.890 1.00 0.975

K1

0.903 1.10 1.025

L

0.45 0.61 0.55

L1

0.25 0.55 0.40

M

0.085 0.150 0.110

a

0° 8° --

All Dimensions in mm

Suggested Pad Layout

Please see /

for the latest version.

SOT23

Y

Y1

C

Dimensions Value (in mm)

C

2.0

X

0.8

X1

1.35

Y

0.9

Y1

2.9

X

X1

ZVP3310F

Document number: DS33406 Rev. 5 - 2

4 of 5

August 2019

© Diodes Incorporated

ZVP3310F

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2019, Diodes Incorporated

ZVP3310F

Document number: DS33406 Rev. 5 - 2

5 of 5

August 2019

© Diodes Incorporated