2024年4月26日发(作者：计翠巧)
SPTECH 2SC3320
SPTECHSiliconNPNPowerTransistor
DESCRIPTION
·HighCollector-EmitterBreakdownVoltage-
:V
(BR)CEO
=400V(Min)
·HighSwitchingSpeed
·HighReliability
APPLICATIONS
·Switchingregulators
·Ultrasonicgenerators
·Highfrequencyinverters
·Generalpurposepoweramplifiers
ABSOLUTEMAXIMUMRATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-BaseVoltage
Collector-EmitterVoltage
Collector-EmitterVoltage
Emitter-BaseVoltage
CollectorCurrent-Continuous
BaseCurrent-Continuous
CollectorPowerDissipation
@T
C
=25℃
JunctionTemperature
StorageTemperatureRange
VALUE
500
400
400
7
15
5
80
150
-65~150
UNIT
V
V
V
V
A
A
W
℃
℃
2SC3320
THERMALCHARACTERISTICS
SYMBOL
R
thj-c
PARAMETER
ThermalResistance,JunctiontoCase
MAX
1.56
UNIT
℃/W
1
SPTECH 2SC3320
SPTECHSiliconNPNPowerTransistor
ELECTRICALCHARACTERISTICS
T
C
=25℃unlessotherwisespecified
SYMBOL
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
PARAMETER
Collector-EmitterBreakdownVoltage
Collector-EmitterSustainingVoltage
Collector-BaseBreakdownVoltage
Emitter-BaseBreakdownVoltage
Collector-EmitterSaturationVoltage
Base-EmitterSaturationVoltage
CollectorCutoffCurrent
EmitterCutoffCurrent
DCCurrentGain
CONDITIONS
I
C
=10mA;I
B
=0
I
C
=50mA;I
B
=0
I
C
=1mA;I
E
=0
I
E
=1mA;I
C
=0
I
C
=6A;I
B
=1.2A
I
C
=6A;I
B
=1.2A
V
CB
=500V;I
E
=0
V
EB
=7V;I
C
=0
I
C
=6A;V
CE
=5V10
MIN
400
400
500
7
1.0
1.5
1.0
1.0
T
V
V
V
V
V
V
mA
mA
2SC3320
Switchingtimes
t
on
t
stg
t
f
Turn-onTime
StorageTime
FallTime
I
C
=7.5A,I
B1
=1.5A;I
B2
=-3A
R
L
=20Ω;P
W
=20μsDuty≤2%
0.5
1.5
0.15
μs
μs
μs
2
2024年4月26日发(作者：计翠巧)
SPTECH 2SC3320
SPTECHSiliconNPNPowerTransistor
DESCRIPTION
·HighCollector-EmitterBreakdownVoltage-
:V
(BR)CEO
=400V(Min)
·HighSwitchingSpeed
·HighReliability
APPLICATIONS
·Switchingregulators
·Ultrasonicgenerators
·Highfrequencyinverters
·Generalpurposepoweramplifiers
ABSOLUTEMAXIMUMRATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-BaseVoltage
Collector-EmitterVoltage
Collector-EmitterVoltage
Emitter-BaseVoltage
CollectorCurrent-Continuous
BaseCurrent-Continuous
CollectorPowerDissipation
@T
C
=25℃
JunctionTemperature
StorageTemperatureRange
VALUE
500
400
400
7
15
5
80
150
-65~150
UNIT
V
V
V
V
A
A
W
℃
℃
2SC3320
THERMALCHARACTERISTICS
SYMBOL
R
thj-c
PARAMETER
ThermalResistance,JunctiontoCase
MAX
1.56
UNIT
℃/W
1
SPTECH 2SC3320
SPTECHSiliconNPNPowerTransistor
ELECTRICALCHARACTERISTICS
T
C
=25℃unlessotherwisespecified
SYMBOL
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
PARAMETER
Collector-EmitterBreakdownVoltage
Collector-EmitterSustainingVoltage
Collector-BaseBreakdownVoltage
Emitter-BaseBreakdownVoltage
Collector-EmitterSaturationVoltage
Base-EmitterSaturationVoltage
CollectorCutoffCurrent
EmitterCutoffCurrent
DCCurrentGain
CONDITIONS
I
C
=10mA;I
B
=0
I
C
=50mA;I
B
=0
I
C
=1mA;I
E
=0
I
E
=1mA;I
C
=0
I
C
=6A;I
B
=1.2A
I
C
=6A;I
B
=1.2A
V
CB
=500V;I
E
=0
V
EB
=7V;I
C
=0
I
C
=6A;V
CE
=5V10
MIN
400
400
500
7
1.0
1.5
1.0
1.0
T
V
V
V
V
V
V
mA
mA
2SC3320
Switchingtimes
t
on
t
stg
t
f
Turn-onTime
StorageTime
FallTime
I
C
=7.5A,I
B1
=1.5A;I
B2
=-3A
R
L
=20Ω;P
W
=20μsDuty≤2%
0.5
1.5
0.15
μs
μs
μs
2