2024年5月11日发(作者：骑女)
AO3401
P-Channel Enhancement
MOSFET
SOT-23-3
2.9
0.4
Unit:mm
■ Features
●V
DS (V)
=-30V
●
I
D
=-4.2 A (V
GS
=-10V)
3
0
2
.
8
0
0
1
.
6
0
0
.
4
●R
DS(ON)
＜ 50mΩ (V
GS
=-10V)
0
.
5
5
1
0.95
1.9
2
●R
DS(ON)
＜ 65mΩ (V
GS
=-4.5V)
0.15
●R
DS(ON)
＜ 120mΩ (V
GS
=-2.5V)
0
1
.
1
0
1. Gate
0
0
.
6
8
0
D
0
-
0
.
1
2. Source
3. Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation Ta = 25℃
Ta = 70℃
Thermal on- to-Ambient t
≤
10s
Thermal on- to-Ambient
Thermal on- to-Case
Junction Temperature
Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
-30
±12
-4.2
-3.5
-30
1.4
1
90
125
60
150
-55 to 150
℃
℃/W
W
A
Unit
V
1
AO3401
P-Channel Enhancement
MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-4.2A
Static Drain-Source On-Resistance
R
DS(O
n
)
V
GS
=-10V, I
D
=-4.2A T
J
=125℃
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-1A,V
GS
=0V-0.75
I
F
=-4A, d
I
/d
t
=100A/μs
I
F
=5A, d
I
/d
t
=100A/μs
V
GS
=-10V, V
DS
=-15V, R
L
=3.6Ω,R
GEN
=6Ω
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
Min
-30
TypMaxUnit
V
-1
-5
±100
-0.4-1
42
-1.3
50
75
53
80
-25
711
954
115
77
6
9.4
2
3
6.3
3.2
38.3
12
20.2
11.2
-2.2
-1
65
120
μA
nA
V
mΩ
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-5A
V
GS
=0V, V
DS
=-15V, f=1MHz
A
S
pF
Ω
nC
ns
nC
A
V
■ Marking
Marking
AO3401
P-Channel Enhancement
MOSFET
■ Typical Characterisitics
25.00
-10V
20.00
15.00
10.00
5.00
0.00
0.00
-2.5V
-4.5V
-3V
-
I
D
(
A
)
6
-
I
D
(
A
)
125°C
8
10
V
DS
=-5V
4
2
0
V
GS
=-2V
25°C
1.002.003.004.005.00
00.511.522.53
-V
DS
(Volts)
Fig 1: On-Region Characteristics
120
N
o
r
m
a
l
i
z
e
d
O
n
-
R
e
s
i
s
t
a
n
c
e
100
R
D
S
(
O
N
)
(
m
Ω
)
80
60
40
V
GS
=-10V
20
0.002.004.006.008.0010.00
V
GS
=-2.5V
V
GS
=-4.5V
1.8
1.6
1.4
1.2
1
0.8
0
-V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
=-3.5A, V
GS
=-4.5V
I
D
=-3.5A, V
GS
=-10V
V
GS
=-2.5V
I
D
=-1A
255175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
R
D
S
(
O
N
)
(
m
Ω
)
130
110
90
70
50
30
10
0246810
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
-
I
S
(
A
)
I
D
=-2A
1.0E+01
1.0E+00
1.0E-01
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.00.20.40.60.81.01.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
AO3401
P-Channel Enhancement
MOSFET
■ Typical Characterisitics
5
4
-
V
G
S
(
V
o
l
t
s
)
3
2
1
200
0
024681012
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
1400
V
DS
=-15V
I
D
=-4A
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1200
1000
800
600
400
C
oss
C
rss
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
10µs
P
o
w
e
r
(
W
)
100µs
1ms
0.1s
10ms
40
T
J(Max)
=150°C
T
A
=25°C
30
-
I
D
(
A
m
p
s
)
R
DS(ON)
10.0
limited
20
1.0
1s
10s
DC
0.1
0.11
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
.
Operating Area (Note E)
10100
10
0
0.0010.010.
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
J
A
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.000010.00010.0010.010.
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
2024年5月11日发(作者：骑女)
AO3401
P-Channel Enhancement
MOSFET
SOT-23-3
2.9
0.4
Unit:mm
■ Features
●V
DS (V)
=-30V
●
I
D
=-4.2 A (V
GS
=-10V)
3
0
2
.
8
0
0
1
.
6
0
0
.
4
●R
DS(ON)
＜ 50mΩ (V
GS
=-10V)
0
.
5
5
1
0.95
1.9
2
●R
DS(ON)
＜ 65mΩ (V
GS
=-4.5V)
0.15
●R
DS(ON)
＜ 120mΩ (V
GS
=-2.5V)
0
1
.
1
0
1. Gate
0
0
.
6
8
0
D
0
-
0
.
1
2. Source
3. Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation Ta = 25℃
Ta = 70℃
Thermal on- to-Ambient t
≤
10s
Thermal on- to-Ambient
Thermal on- to-Case
Junction Temperature
Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
-30
±12
-4.2
-3.5
-30
1.4
1
90
125
60
150
-55 to 150
℃
℃/W
W
A
Unit
V
1
AO3401
P-Channel Enhancement
MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-4.2A
Static Drain-Source On-Resistance
R
DS(O
n
)
V
GS
=-10V, I
D
=-4.2A T
J
=125℃
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-1A,V
GS
=0V-0.75
I
F
=-4A, d
I
/d
t
=100A/μs
I
F
=5A, d
I
/d
t
=100A/μs
V
GS
=-10V, V
DS
=-15V, R
L
=3.6Ω,R
GEN
=6Ω
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
Min
-30
TypMaxUnit
V
-1
-5
±100
-0.4-1
42
-1.3
50
75
53
80
-25
711
954
115
77
6
9.4
2
3
6.3
3.2
38.3
12
20.2
11.2
-2.2
-1
65
120
μA
nA
V
mΩ
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-5A
V
GS
=0V, V
DS
=-15V, f=1MHz
A
S
pF
Ω
nC
ns
nC
A
V
■ Marking
Marking
AO3401
P-Channel Enhancement
MOSFET
■ Typical Characterisitics
25.00
-10V
20.00
15.00
10.00
5.00
0.00
0.00
-2.5V
-4.5V
-3V
-
I
D
(
A
)
6
-
I
D
(
A
)
125°C
8
10
V
DS
=-5V
4
2
0
V
GS
=-2V
25°C
1.002.003.004.005.00
00.511.522.53
-V
DS
(Volts)
Fig 1: On-Region Characteristics
120
N
o
r
m
a
l
i
z
e
d
O
n
-
R
e
s
i
s
t
a
n
c
e
100
R
D
S
(
O
N
)
(
m
Ω
)
80
60
40
V
GS
=-10V
20
0.002.004.006.008.0010.00
V
GS
=-2.5V
V
GS
=-4.5V
1.8
1.6
1.4
1.2
1
0.8
0
-V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
=-3.5A, V
GS
=-4.5V
I
D
=-3.5A, V
GS
=-10V
V
GS
=-2.5V
I
D
=-1A
255175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
R
D
S
(
O
N
)
(
m
Ω
)
130
110
90
70
50
30
10
0246810
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
-
I
S
(
A
)
I
D
=-2A
1.0E+01
1.0E+00
1.0E-01
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.00.20.40.60.81.01.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
AO3401
P-Channel Enhancement
MOSFET
■ Typical Characterisitics
5
4
-
V
G
S
(
V
o
l
t
s
)
3
2
1
200
0
024681012
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
1400
V
DS
=-15V
I
D
=-4A
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1200
1000
800
600
400
C
oss
C
rss
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
10µs
P
o
w
e
r
(
W
)
100µs
1ms
0.1s
10ms
40
T
J(Max)
=150°C
T
A
=25°C
30
-
I
D
(
A
m
p
s
)
R
DS(ON)
10.0
limited
20
1.0
1s
10s
DC
0.1
0.11
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
.
Operating Area (Note E)
10100
10
0
0.0010.010.
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
J
A
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.000010.00010.0010.010.
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance