2024年5月20日发(作者：伟颜)
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Power Integrated Module
7MBR100U4B120
MS6M 0856
Feb. 02 ’05
Feb. 02 ’05
ita
be
MS6M0856
1
15
H04-004-07b
R e v i s e d R e c o r d s
Date
Classi-
fication
t
Applied
date
Issued
date
DrawnCheckedCheckedApproved
Feb.-02 -’05
Enactment
be
MS6M0856
2
15
H04-004-06b
7MBR100U4B120
1. Outline Drawing ( Unit : mm )
LABEL
shows theoretical dimension.
( ) shows reference dimension.
2. Equivalent circuit
[ Converter ]
21(P)
[ Brake ]
22(P1)
[ Inverter ][ Thermistor ]
8
20
(Gu)
1(R)2(S)3(T)
7(B)
19(Eu)
18
(Gv)
17(Ev)
4(U)
16
(Gw)
15(Ew)
5(V)
9
6(W)
14(Gb)
23(N)24(N1)
13(Gx)12(Gy)11(Gz)
10(En)
MS6M0856
3
15
H04-004-03a
te Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IcContinuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Conditions
Maximum
Ratings
1200
±20
100
75
200
150
100
200
390
1200
±20
50
35
100
70
205
1200
1600
50Hz/60Hz
Units
V
V
I
n
v
e
r
t
e
r
Collector currentIcp
-Ic
-Ic pulse
Pc
VCES
VGES
Ic
A
Collector Power Dissipation
Collector-Emitter voltage
Gate-Emitter voltage
1ms
1 deviceW
V
V
B
r
a
k
e
Continuous
1ms
1 device
Collector current
Icp
Collector Power Dissipation
Repetitive peak reverse Voltage (Diode)
Repetitive peak reverse Voltage
Pc
VRRM
VRRM
Io
IFSM
I
2
t
Tj
Tstg
Viso
-
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
V
V
A
A
A
2
s
°C
VAC
N m
C
o
n
v
e
r
t
e
r
Average Output Current
Surge Current (Non-Repetitive)
sine wave
Tj=150°C, 10ms
half sine wave
100
520
1352
150
-40 ~ +125
2500
3.5
I
2
t (Non-Repetitive)
Junction temperature
Storage temperature
Isolation
between terminal and copper base (*1)
voltage
between thermistor and others (*2)
Screw
Torque
Mounting (*3)
AC : 1min.
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
MS6M0856
4
15
H04-004-03a
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
Conditions
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 100mA
Tj= 25°C
Tj=125°C
Tj= 25°C
Ic = 100A
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
Ic = 100A
VGE=±15V
Rg = 9.1 Ω
VGE=15V
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Characteristics
.
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.5
2.60
2.95
2.10
2.45
8
0.38
0.13
0.03
0.41
0.07
2.60
2.90
2.10
2.40
-
-
-
2.25
2.60
2.00
2.35
0.53
0.43
0.37
0.07
-
1.55
1.40
-
5000
495
3375
1.0
200
8.5
2.85
-
2.35
-
-
1.20
0.60
-
1.00
0.30
2.85
-
2.35
-
0.35
1.0
200
2.65
-
2.40
-
1.20
0.60
1.00
0.30
1.0
1.90
-
1.0
-
520
3450
Units
mA
nA
V
V
I
n
v
e
r
t
e
r
Input capacitance
Turn-on time
nF
μs
Turn-off time
VGE=0V
IF = 100A
IF = 100A
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VGE=15V
Ic = 50A
Vcc = 600V
Ic = 50A
VGE=±15V
Rg = 33 Ω
VR=1200V
VGE=0V
IF = 100A
VR=1600V
T = 25°C
T =100°C
T = 25/50°C
Forward on voltageV
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Collector-Emitter
saturation voltage
μs
mA
nA
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Turn-on time
Turn-off time
Reverse current
C
o
n
v
e
r
t
e
r
Forward on voltage
Reverse current
Resistance
B value
terminal
chip
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
B
r
a
k
e
V
μs
mA
V
mA
Ω
K
T
h
e
r
m
i
s
t
o
r
MS6M0856
5
15
H04-004-03a
5. Thermal resistance characteristics
ItemsSymbolsConditions
Inverter IGBT
Thermal resistance(1device)Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact Thermal resistance
(1device) (*4)
Rth(c-f)with Thermal Compound
Characteristics
.
-
-
-
-
-
-
-
-
-
0.05
0.32
0.58
0.60
0.50
-
Units
°C/W
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Logo of production
7MBR100U4B120
100A 1200V
.
able category
Place of manufacturing (code)
This specification is applied to Power Integrated Module named 7MBR100U4B120 .
e and transportation notes
・
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
・
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
～～
90%
0V
L
0V
V
GE
t
rr
I
rr
90%
～～
V
CE
Vcc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r(i)
t
r
t
on
t
off
～～
Ic
10%10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS6M0856
6
15
H04-004-03a
11. Reliability test results
Reliability Test Items
Test
cate-
gories
Test items
1Terminal Strength
(Pull test)
2Mounting Strength
Pull force
Test time
Screw torque
Test time
Test methods and conditions
:
:
:
:
20N
10±1 sec.
2.5 ~ 3.5 N･m (M5)
10±1 sec.
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5
5
( 0 : 1 )
( 0 : 1 )
(Aug.-2001 edition)
Test Method 401
Method
Ⅰ
Test Method 402
method
Ⅱ
Test Method 403
Reference 1
Condition code B
3Vibration
4Shock
5Solderabitlity
6Resistance to
Soldering Heat
1High Temperature
Storage
2Low Temperature
Storage
3Temperature
Humidity
Storage
4Unsaturated
Pressurized Vapor
Range of frequency : 10 ~ 500Hz
Sweeping time:15 min.
Acceleration:
100m/s
2
Sweeping direction : Each X,Y,Z axis
Test time:6 hr. (2hr./direction)
Maximum acceleration:
5000m/s
2
Pulse width:1.0msec.
Direction:Each X,Y,Z axis
Test time:3 times/direction
Solder temp.:235±5
℃
Immersion time:5±0.5sec.
Test time:1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Solder temp.:260±5
℃
Immersion time:10±1sec.
Test time:1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Storage temp.:125±5 ℃
Test duration:1000hr.
Storage temp.:-40±5 ℃
Test duration:1000hr.
Storage temp.:85±2 ℃
Relative humidity:85±5%
Test duration:1000hr.
Test temp.:120±2 ℃
Test humidity :85±5%
Test duration:96hr.
Test temp.: Low temp. -40
±
5
℃
High temp. 125 ±5 ℃
RT 5 ~ 35
℃
:High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
:100 cycles
+0
:
High temp. 100
℃
+5
-0
-5
5( 0 : 1 )
M
e
c
h
a
n
i
c
a
l
T
e
s
t
s
Test Method 404
Condition code B
5( 0 : 1 )
Test Method 303
Condition code A
5
( 0 : 1 )
Test Method 302
Condition code A
5
( 0 : 1 )
Test Method 201
Test Method 202
Test Method 103
Test code C
Test Method 103
Test code E
Test Method 105
5
5
5
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
5( 0 : 1 )
E
n
v
i
r
o
n
m
e
n
t
T
e
s
t
s
5Temperature
Cycle
5( 0 : 1 )
Dwell time
Number of cycles
6Thermal Shock
Test temp.
Test Method 307
method
Ⅰ
Condition code A
5( 0 : 1 )
Low temp. 0 ℃
Used liquid : Water with ice and boiling water
Dipping time:5 min. par each temp.
Transfer time:10 sec.
Number of cycles:10 cycles
MS6M0856
7
15
H04-004-03a
Reliability Test Items
Test
cate-
gories
Test items
1High temperature
Reverse Bias
Test methods and conditions
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5( 0 : 1 )
(Aug.-2001 edition)
Test Method 101
Test temp.
Bias Voltage
Bias Method
E
n
d
u
r
a
n
c
E
e
n
T
d
u
e
r
s
a
t
s
n
c
e
T
e
s
t
s
Test duration
2High temperature
Bias (for gate)Test temp.
Bias Voltage
Bias Method
Test duration
3Temperature
Humidity BiasTest temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = 0.8×VCES
:Applied DC voltage to C-E
VGE = 0V
:1000hr.
Test Method 101
5( 0 : 1 )
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = VGE = +20V or -20V
:Applied DC voltage to G-E
VCE = 0V
:1000hr.
:
:
:
:
:
:
:
:
:
85±2 C
85±5%
VC = 0.8×VCES
Applied DC voltage to C-E
VGE = 0V
1000hr.
2 sec.
18 sec.
2024年5月20日发(作者：伟颜)
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Power Integrated Module
7MBR100U4B120
MS6M 0856
Feb. 02 ’05
Feb. 02 ’05
ita
be
MS6M0856
1
15
H04-004-07b
R e v i s e d R e c o r d s
Date
Classi-
fication
t
Applied
date
Issued
date
DrawnCheckedCheckedApproved
Feb.-02 -’05
Enactment
be
MS6M0856
2
15
H04-004-06b
7MBR100U4B120
1. Outline Drawing ( Unit : mm )
LABEL
shows theoretical dimension.
( ) shows reference dimension.
2. Equivalent circuit
[ Converter ]
21(P)
[ Brake ]
22(P1)
[ Inverter ][ Thermistor ]
8
20
(Gu)
1(R)2(S)3(T)
7(B)
19(Eu)
18
(Gv)
17(Ev)
4(U)
16
(Gw)
15(Ew)
5(V)
9
6(W)
14(Gb)
23(N)24(N1)
13(Gx)12(Gy)11(Gz)
10(En)
MS6M0856
3
15
H04-004-03a
te Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IcContinuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Conditions
Maximum
Ratings
1200
±20
100
75
200
150
100
200
390
1200
±20
50
35
100
70
205
1200
1600
50Hz/60Hz
Units
V
V
I
n
v
e
r
t
e
r
Collector currentIcp
-Ic
-Ic pulse
Pc
VCES
VGES
Ic
A
Collector Power Dissipation
Collector-Emitter voltage
Gate-Emitter voltage
1ms
1 deviceW
V
V
B
r
a
k
e
Continuous
1ms
1 device
Collector current
Icp
Collector Power Dissipation
Repetitive peak reverse Voltage (Diode)
Repetitive peak reverse Voltage
Pc
VRRM
VRRM
Io
IFSM
I
2
t
Tj
Tstg
Viso
-
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
V
V
A
A
A
2
s
°C
VAC
N m
C
o
n
v
e
r
t
e
r
Average Output Current
Surge Current (Non-Repetitive)
sine wave
Tj=150°C, 10ms
half sine wave
100
520
1352
150
-40 ~ +125
2500
3.5
I
2
t (Non-Repetitive)
Junction temperature
Storage temperature
Isolation
between terminal and copper base (*1)
voltage
between thermistor and others (*2)
Screw
Torque
Mounting (*3)
AC : 1min.
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
MS6M0856
4
15
H04-004-03a
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
Conditions
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 100mA
Tj= 25°C
Tj=125°C
Tj= 25°C
Ic = 100A
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
Ic = 100A
VGE=±15V
Rg = 9.1 Ω
VGE=15V
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Characteristics
.
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.5
2.60
2.95
2.10
2.45
8
0.38
0.13
0.03
0.41
0.07
2.60
2.90
2.10
2.40
-
-
-
2.25
2.60
2.00
2.35
0.53
0.43
0.37
0.07
-
1.55
1.40
-
5000
495
3375
1.0
200
8.5
2.85
-
2.35
-
-
1.20
0.60
-
1.00
0.30
2.85
-
2.35
-
0.35
1.0
200
2.65
-
2.40
-
1.20
0.60
1.00
0.30
1.0
1.90
-
1.0
-
520
3450
Units
mA
nA
V
V
I
n
v
e
r
t
e
r
Input capacitance
Turn-on time
nF
μs
Turn-off time
VGE=0V
IF = 100A
IF = 100A
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VGE=15V
Ic = 50A
Vcc = 600V
Ic = 50A
VGE=±15V
Rg = 33 Ω
VR=1200V
VGE=0V
IF = 100A
VR=1600V
T = 25°C
T =100°C
T = 25/50°C
Forward on voltageV
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Collector-Emitter
saturation voltage
μs
mA
nA
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Turn-on time
Turn-off time
Reverse current
C
o
n
v
e
r
t
e
r
Forward on voltage
Reverse current
Resistance
B value
terminal
chip
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
B
r
a
k
e
V
μs
mA
V
mA
Ω
K
T
h
e
r
m
i
s
t
o
r
MS6M0856
5
15
H04-004-03a
5. Thermal resistance characteristics
ItemsSymbolsConditions
Inverter IGBT
Thermal resistance(1device)Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact Thermal resistance
(1device) (*4)
Rth(c-f)with Thermal Compound
Characteristics
.
-
-
-
-
-
-
-
-
-
0.05
0.32
0.58
0.60
0.50
-
Units
°C/W
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Logo of production
7MBR100U4B120
100A 1200V
.
able category
Place of manufacturing (code)
This specification is applied to Power Integrated Module named 7MBR100U4B120 .
e and transportation notes
・
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
・
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
～～
90%
0V
L
0V
V
GE
t
rr
I
rr
90%
～～
V
CE
Vcc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r(i)
t
r
t
on
t
off
～～
Ic
10%10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS6M0856
6
15
H04-004-03a
11. Reliability test results
Reliability Test Items
Test
cate-
gories
Test items
1Terminal Strength
(Pull test)
2Mounting Strength
Pull force
Test time
Screw torque
Test time
Test methods and conditions
:
:
:
:
20N
10±1 sec.
2.5 ~ 3.5 N･m (M5)
10±1 sec.
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5
5
( 0 : 1 )
( 0 : 1 )
(Aug.-2001 edition)
Test Method 401
Method
Ⅰ
Test Method 402
method
Ⅱ
Test Method 403
Reference 1
Condition code B
3Vibration
4Shock
5Solderabitlity
6Resistance to
Soldering Heat
1High Temperature
Storage
2Low Temperature
Storage
3Temperature
Humidity
Storage
4Unsaturated
Pressurized Vapor
Range of frequency : 10 ~ 500Hz
Sweeping time:15 min.
Acceleration:
100m/s
2
Sweeping direction : Each X,Y,Z axis
Test time:6 hr. (2hr./direction)
Maximum acceleration:
5000m/s
2
Pulse width:1.0msec.
Direction:Each X,Y,Z axis
Test time:3 times/direction
Solder temp.:235±5
℃
Immersion time:5±0.5sec.
Test time:1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Solder temp.:260±5
℃
Immersion time:10±1sec.
Test time:1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Storage temp.:125±5 ℃
Test duration:1000hr.
Storage temp.:-40±5 ℃
Test duration:1000hr.
Storage temp.:85±2 ℃
Relative humidity:85±5%
Test duration:1000hr.
Test temp.:120±2 ℃
Test humidity :85±5%
Test duration:96hr.
Test temp.: Low temp. -40
±
5
℃
High temp. 125 ±5 ℃
RT 5 ~ 35
℃
:High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
:100 cycles
+0
:
High temp. 100
℃
+5
-0
-5
5( 0 : 1 )
M
e
c
h
a
n
i
c
a
l
T
e
s
t
s
Test Method 404
Condition code B
5( 0 : 1 )
Test Method 303
Condition code A
5
( 0 : 1 )
Test Method 302
Condition code A
5
( 0 : 1 )
Test Method 201
Test Method 202
Test Method 103
Test code C
Test Method 103
Test code E
Test Method 105
5
5
5
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
5( 0 : 1 )
E
n
v
i
r
o
n
m
e
n
t
T
e
s
t
s
5Temperature
Cycle
5( 0 : 1 )
Dwell time
Number of cycles
6Thermal Shock
Test temp.
Test Method 307
method
Ⅰ
Condition code A
5( 0 : 1 )
Low temp. 0 ℃
Used liquid : Water with ice and boiling water
Dipping time:5 min. par each temp.
Transfer time:10 sec.
Number of cycles:10 cycles
MS6M0856
7
15
H04-004-03a
Reliability Test Items
Test
cate-
gories
Test items
1High temperature
Reverse Bias
Test methods and conditions
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5( 0 : 1 )
(Aug.-2001 edition)
Test Method 101
Test temp.
Bias Voltage
Bias Method
E
n
d
u
r
a
n
c
E
e
n
T
d
u
e
r
s
a
t
s
n
c
e
T
e
s
t
s
Test duration
2High temperature
Bias (for gate)Test temp.
Bias Voltage
Bias Method
Test duration
3Temperature
Humidity BiasTest temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = 0.8×VCES
:Applied DC voltage to C-E
VGE = 0V
:1000hr.
Test Method 101
5( 0 : 1 )
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = VGE = +20V or -20V
:Applied DC voltage to G-E
VCE = 0V
:1000hr.
:
:
:
:
:
:
:
:
:
85±2 C
85±5%
VC = 0.8×VCES
Applied DC voltage to C-E
VGE = 0V
1000hr.
2 sec.
18 sec.