2024年6月12日发(作者：温白风)
TLP620,TLP620−2,TLP620−4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP620, TLP620−2, TLP620−4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620−4 provides four isolated channels in a sixteen plastic
DIP.
· Collector−emitter voltage: 55V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Unit in mm
TOSHIBA
Weight: 0.26 g
11−5B2
Pin Configurations
(top view)
1
TLP620
4
1
TLP620-2
8 1
TLP620-4
16
2
3
1 : ANODE
CATHODE
2 : CATHODE
ANODE
3 : EMITTER
4 : COLLECTOR
2
7
6
2
15
3 3
14
TOSHIBA
4
5
1, 3 : ANODE
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER
6, 8 : COLLECTOR
4
5
13
12
11−10C4
Weight: 0.54 g
6
7
8
11
10
9
1, 3, 5, 7 : ANODE, CATHODE
2, 4, 6, 8 : CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR
TOSHIBA 11−20A3
Weight: 1.1 g
1
2002-09-25
TLP620,TLP620−2,TLP620−4
UL recognized
BSI approved
Made In Japan
E67349
7426, 7427
*1
*2
Made In Thailand
E152349 *1
7426, 7427 *2
*1 UL1577
*2 BS EN60065: 1994, BS EN60950: 1992
· Isolation voltage: 5000V
rms
(min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92, certificate no. 68384
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note) When a VDE0884 approved type is needed,
please designate the “Option(D4)”.
· Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Maximum Ratings
(Ta = 25°C)
Rating
Characteristic Symbol
TLP620
Forward current
Forward current derating
L
E
D
Pulse forward current
Power dissipation (1 circuit)
Power dissipation derating
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
D
e
t
e
c
t
o
r
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating (1 circuit) (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta ≥ 25°C, 1 circuit)
Isolation voltage
I
F (RMS)
60
∆I
F
/ °C
I
FP
P
D
∆P
D
/ °C
T
j
-0.7 (Ta ≥ 39°C)
TLP620-2
TLP620-4
Unit
50 mA
-0.5 (Ta ≥ 25°C) mA / °C
1 (100µs pulse, 100pps) A
100 70 mW
-1.0 -0.7 mW / °C
125 °C
V
CEO
55 V
V
ECO
7 V
I
C
50 mA
P
C
∆P
C
/ °C
T
j
T
stg
T
opr
150
-1.5
100 mW
-1.0 mW / °C
125 °C
-55~125 °C
-55~100 °C
T
sold
260 (10s) °C
P
T
250
∆P
T
/ °C -2.5
150 mW
-1.5 mW / °C
V
rms
BV
S
5000 (AC, 1 min., RH ≤ 60%)
2
2002-09-25
2024年6月12日发(作者：温白风)
TLP620,TLP620−2,TLP620−4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP620, TLP620−2, TLP620−4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620−4 provides four isolated channels in a sixteen plastic
DIP.
· Collector−emitter voltage: 55V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Unit in mm
TOSHIBA
Weight: 0.26 g
11−5B2
Pin Configurations
(top view)
1
TLP620
4
1
TLP620-2
8 1
TLP620-4
16
2
3
1 : ANODE
CATHODE
2 : CATHODE
ANODE
3 : EMITTER
4 : COLLECTOR
2
7
6
2
15
3 3
14
TOSHIBA
4
5
1, 3 : ANODE
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER
6, 8 : COLLECTOR
4
5
13
12
11−10C4
Weight: 0.54 g
6
7
8
11
10
9
1, 3, 5, 7 : ANODE, CATHODE
2, 4, 6, 8 : CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR
TOSHIBA 11−20A3
Weight: 1.1 g
1
2002-09-25
TLP620,TLP620−2,TLP620−4
UL recognized
BSI approved
Made In Japan
E67349
7426, 7427
*1
*2
Made In Thailand
E152349 *1
7426, 7427 *2
*1 UL1577
*2 BS EN60065: 1994, BS EN60950: 1992
· Isolation voltage: 5000V
rms
(min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92, certificate no. 68384
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note) When a VDE0884 approved type is needed,
please designate the “Option(D4)”.
· Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Maximum Ratings
(Ta = 25°C)
Rating
Characteristic Symbol
TLP620
Forward current
Forward current derating
L
E
D
Pulse forward current
Power dissipation (1 circuit)
Power dissipation derating
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
D
e
t
e
c
t
o
r
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating (1 circuit) (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta ≥ 25°C, 1 circuit)
Isolation voltage
I
F (RMS)
60
∆I
F
/ °C
I
FP
P
D
∆P
D
/ °C
T
j
-0.7 (Ta ≥ 39°C)
TLP620-2
TLP620-4
Unit
50 mA
-0.5 (Ta ≥ 25°C) mA / °C
1 (100µs pulse, 100pps) A
100 70 mW
-1.0 -0.7 mW / °C
125 °C
V
CEO
55 V
V
ECO
7 V
I
C
50 mA
P
C
∆P
C
/ °C
T
j
T
stg
T
opr
150
-1.5
100 mW
-1.0 mW / °C
125 °C
-55~125 °C
-55~100 °C
T
sold
260 (10s) °C
P
T
250
∆P
T
/ °C -2.5
150 mW
-1.5 mW / °C
V
rms
BV
S
5000 (AC, 1 min., RH ≤ 60%)
2
2002-09-25