2024年6月13日发(作者：莱飞雪)
J201 - J202 / MMBFJ201 - MMBFJ203 — N-Channel General Purpose Amplifier
January 2008
J201 - J202 / MMBFJ201 - MMBFJ203
N-Channel General Purpose Amplifier
•This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.
•Sourced from Process 52.
TO-92
SOT-23
3
2
Marking
J201
J202
1
1. Drain 2. Source 3. Gate
Marking
MMBFJ201 : 62P
MMBFJ202 : 62Q
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings *
T=25°C unless otherwise noted
a
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
ParameterValue
40
-40
50
-55 ~ 150
Units
V
V
mA
°COperating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T=25°C unless otherwise noted
a
Symbol
P
D
R
qJC
R
qJA
Parameter
J201 - J202
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
625
5.0
125
357
Value
MMBFJ201 - MMBFJ203
350
2.8
556
Units
W
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6” ´ 1.6” ´ 0.06"
© 2007 Fairchild Semiconductor Corporation
J201 - J202 / MMBFJ201 - MMBFJ203 Rev. 1.0.01
/
J201 - J202 / MMBFJ201 - MMBFJ203 — N-Channel General Purpose Amplifier
Electrical Characteristics *
T = 25°C unless otherwise noted
C
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS
(off)
Parameter
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Conditions
I
G
= -1mA, V
DS
= 0
V
GS
= -20V, V
DS
= 0
V
DS
= 20V, I
D
= 10nA 201
202
203
Min.
-40
MaxUnits
V
-100
-0.3
-0.8
-2
-1.5
-4
-10
pA
V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current *
V
DS
= 20V, I
GS
= 0 201
202
203
0.2
0.9
4
1.0
4.5
20
mA
Small Signal Characteristics
y
FS
Forward Transfer Admittance
V
DS
= 20V, f = 1.0kHz 201
202
203
500
1000
1500
mmhos
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
© 2007 Fairchild Semiconductor Corporation
J201 - J202 / MMBFJ201 - MMBFJ203 Rev. 1.0.02
/
2024年6月13日发(作者：莱飞雪)
J201 - J202 / MMBFJ201 - MMBFJ203 — N-Channel General Purpose Amplifier
January 2008
J201 - J202 / MMBFJ201 - MMBFJ203
N-Channel General Purpose Amplifier
•This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.
•Sourced from Process 52.
TO-92
SOT-23
3
2
Marking
J201
J202
1
1. Drain 2. Source 3. Gate
Marking
MMBFJ201 : 62P
MMBFJ202 : 62Q
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings *
T=25°C unless otherwise noted
a
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
ParameterValue
40
-40
50
-55 ~ 150
Units
V
V
mA
°COperating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T=25°C unless otherwise noted
a
Symbol
P
D
R
qJC
R
qJA
Parameter
J201 - J202
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
625
5.0
125
357
Value
MMBFJ201 - MMBFJ203
350
2.8
556
Units
W
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6” ´ 1.6” ´ 0.06"
© 2007 Fairchild Semiconductor Corporation
J201 - J202 / MMBFJ201 - MMBFJ203 Rev. 1.0.01
/
J201 - J202 / MMBFJ201 - MMBFJ203 — N-Channel General Purpose Amplifier
Electrical Characteristics *
T = 25°C unless otherwise noted
C
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS
(off)
Parameter
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Conditions
I
G
= -1mA, V
DS
= 0
V
GS
= -20V, V
DS
= 0
V
DS
= 20V, I
D
= 10nA 201
202
203
Min.
-40
MaxUnits
V
-100
-0.3
-0.8
-2
-1.5
-4
-10
pA
V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current *
V
DS
= 20V, I
GS
= 0 201
202
203
0.2
0.9
4
1.0
4.5
20
mA
Small Signal Characteristics
y
FS
Forward Transfer Admittance
V
DS
= 20V, f = 1.0kHz 201
202
203
500
1000
1500
mmhos
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
© 2007 Fairchild Semiconductor Corporation
J201 - J202 / MMBFJ201 - MMBFJ203 Rev. 1.0.02
/