2024年7月31日发(作者：佛艳卉)
■Dimensions
Two, R1
25±0.2
19±0.15
Be sure to read Precautions on page25.
■Features
•
•
•
•
General-purpose model with a 3.4-mm-wide slot.
Mounts to PCBs or connects to connectors.
High resolution with a 0.5-mm-wide aperture.
OMRON’s XK8-series Connectors can be connected without sol-
dering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
Note:All units are in millimeters unless otherwise indicated.
5±0.2
6±0.2
Two, 3.2±0.2 dia. holes
Four, C0.3
Two, C2
■Absolute Maximum Ratings (Ta=25°C)
0.5±0.1
0.5±0.1
(Optical axis)
8.4±0.1
10±0.2
7.2±0.2
2.5±0.1
3±0.4
Four, 0.25
Four, 0.5
Item
6.5±0.1
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rated value
50 mA
(seenote 1)
1 A
(seenote2)
4 V
30 V
---
20 mA
100 mW
(seenote 1)
–25°C to 85°C
–30°C to
100°C
260°C
(see note 3)
EmitterForward current
Pulse forward cur-
rent
Reverse voltage
Detector
Cross section AA
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Cross section BB
Internal Circuit
KC
Unless otherwise specified, the
tolerances are as shown below.
Dimensions Tolerance
3 mm max.
±0.3
±0.375
±0.45
±0.55
±0.65
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Ambient tem-
perature
Operating
Storage
AE
Soldering temperature
Terminal No. Name
A Anode
K
C
E
Cathode
Collector
Emitter
Note: to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
pulse width is 10 μs maximum with a frequency of
100Hz.
te soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Item
EmitterForward voltage
Reverse current
Peak emission wavelength
DetectorLight current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Rising time
Falling time
V
F
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
SymbolValue
1.2 V typ., 1.5 V max.
0.01 μA typ., 10 μA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.15 V typ., 0.4 V max.
850 nm typ.
4 μs typ.
4 μs typ.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0 lx
---
I
F
= 20 mA, I
L
= 0.1 mA
V
CE
= 10 V
V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Condition
52
EE-SX1088
Photomicrosensor (Transmissive)
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
c
t
o
r
d
i
s
s
i
p
a
t
i
o
n
P
C
(
m
W
)
r
w
a
r
d
c
u
r
r
e
n
t
I
F
(
m
A
)
I
F
P
C
Forward Current vs. Forward
Voltage Characteristics (Typical)
F
o
r
w
a
r
d
c
u
r
r
e
n
t
I
F
(
m
A
)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
V
CE
= 10 V
Ta = −30°C
Ta = 25°C
Ta = 70°C
L
i
g
h
t
c
u
r
r
e
n
t
I
L
(
m
A
)
o
F
e
l
l
o
C
Ambient temperature Ta (°C)
Light Current vs. Collector
Voltage Characteristics (Typical)
−Emitter
Ta = 25°C
)
A
m
(
I
F
= 50 mA
L
I
t
n
I
F
= 40 mA
e
r
r
u
I
F
= 30 mA
c
t
h
g
I
F
= 20 mA
i
L
I
F
= 10 mA
Collector−Emitter voltage V
CE
(V)
Response Time vs. Load Resist-
ance Characteristics (Typical)
V
CC
= 5 V
Ta = 25°C
)
s
μ
(
f
t
r
,
t
e
m
i
t
e
s
n
o
p
s
e
R
Load resistance R
L
(kΩ)
Response Time Measurement
Circuit
Input
90 %
Output
10 %
Input
Output
Forward voltage V
F
(V)
Forward current I
F
(mA)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
Dark Current vs. Ambient
(Typical)
Temperature Characteristics
(Typical)
I
F
)
%
V
= 20 mA
V
CE
= 5 V
0
CE
lx
= 10 V
(
L
I
)
t
A
n
n
e
(
r
r
D
u
I
c
t
t
h
n
g
e
r
i
r
l
u
e
v
c
i
t
k
a
r
l
a
e
R
D
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
I
F
)
I
V
F
= 20 mA
%
V
= 20 mA
(
Ta = 25
CE
= 10 V
°
C
100
)
Ta = 25
CE
= 10 V
°
C
L
I
(Center of
%
)
s
t
optical axis)
(
i
x
n
L
I
80
a
l
e
a
r
t
c
i
r
n
t
p
u
e
o
c
r
r
60
d
f
o
t
h
u
r
e
g
c
t
n
i
t
e
l
h
40
C
(
e
g
v
i
l
i
t
a
e
l
v
e
i
20
t
R
a
l
e
R
0
−2.0−1.5−1.0−0.500.51.01.52.0
Distance d (mm)
Distance d (mm)
EE-SX1088
Photomicrosensor (Transmissive)
53
2024年7月31日发(作者：佛艳卉)
■Dimensions
Two, R1
25±0.2
19±0.15
Be sure to read Precautions on page25.
■Features
•
•
•
•
General-purpose model with a 3.4-mm-wide slot.
Mounts to PCBs or connects to connectors.
High resolution with a 0.5-mm-wide aperture.
OMRON’s XK8-series Connectors can be connected without sol-
dering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
Note:All units are in millimeters unless otherwise indicated.
5±0.2
6±0.2
Two, 3.2±0.2 dia. holes
Four, C0.3
Two, C2
■Absolute Maximum Ratings (Ta=25°C)
0.5±0.1
0.5±0.1
(Optical axis)
8.4±0.1
10±0.2
7.2±0.2
2.5±0.1
3±0.4
Four, 0.25
Four, 0.5
Item
6.5±0.1
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rated value
50 mA
(seenote 1)
1 A
(seenote2)
4 V
30 V
---
20 mA
100 mW
(seenote 1)
–25°C to 85°C
–30°C to
100°C
260°C
(see note 3)
EmitterForward current
Pulse forward cur-
rent
Reverse voltage
Detector
Cross section AA
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Cross section BB
Internal Circuit
KC
Unless otherwise specified, the
tolerances are as shown below.
Dimensions Tolerance
3 mm max.
±0.3
±0.375
±0.45
±0.55
±0.65
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Ambient tem-
perature
Operating
Storage
AE
Soldering temperature
Terminal No. Name
A Anode
K
C
E
Cathode
Collector
Emitter
Note: to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
pulse width is 10 μs maximum with a frequency of
100Hz.
te soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Item
EmitterForward voltage
Reverse current
Peak emission wavelength
DetectorLight current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Rising time
Falling time
V
F
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
SymbolValue
1.2 V typ., 1.5 V max.
0.01 μA typ., 10 μA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.15 V typ., 0.4 V max.
850 nm typ.
4 μs typ.
4 μs typ.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0 lx
---
I
F
= 20 mA, I
L
= 0.1 mA
V
CE
= 10 V
V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Condition
52
EE-SX1088
Photomicrosensor (Transmissive)
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
c
t
o
r
d
i
s
s
i
p
a
t
i
o
n
P
C
(
m
W
)
r
w
a
r
d
c
u
r
r
e
n
t
I
F
(
m
A
)
I
F
P
C
Forward Current vs. Forward
Voltage Characteristics (Typical)
F
o
r
w
a
r
d
c
u
r
r
e
n
t
I
F
(
m
A
)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
V
CE
= 10 V
Ta = −30°C
Ta = 25°C
Ta = 70°C
L
i
g
h
t
c
u
r
r
e
n
t
I
L
(
m
A
)
o
F
e
l
l
o
C
Ambient temperature Ta (°C)
Light Current vs. Collector
Voltage Characteristics (Typical)
−Emitter
Ta = 25°C
)
A
m
(
I
F
= 50 mA
L
I
t
n
I
F
= 40 mA
e
r
r
u
I
F
= 30 mA
c
t
h
g
I
F
= 20 mA
i
L
I
F
= 10 mA
Collector−Emitter voltage V
CE
(V)
Response Time vs. Load Resist-
ance Characteristics (Typical)
V
CC
= 5 V
Ta = 25°C
)
s
μ
(
f
t
r
,
t
e
m
i
t
e
s
n
o
p
s
e
R
Load resistance R
L
(kΩ)
Response Time Measurement
Circuit
Input
90 %
Output
10 %
Input
Output
Forward voltage V
F
(V)
Forward current I
F
(mA)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
Dark Current vs. Ambient
(Typical)
Temperature Characteristics
(Typical)
I
F
)
%
V
= 20 mA
V
CE
= 5 V
0
CE
lx
= 10 V
(
L
I
)
t
A
n
n
e
(
r
r
D
u
I
c
t
t
h
n
g
e
r
i
r
l
u
e
v
c
i
t
k
a
r
l
a
e
R
D
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
I
F
)
I
V
F
= 20 mA
%
V
= 20 mA
(
Ta = 25
CE
= 10 V
°
C
100
)
Ta = 25
CE
= 10 V
°
C
L
I
(Center of
%
)
s
t
optical axis)
(
i
x
n
L
I
80
a
l
e
a
r
t
c
i
r
n
t
p
u
e
o
c
r
r
60
d
f
o
t
h
u
r
e
g
c
t
n
i
t
e
l
h
40
C
(
e
g
v
i
l
i
t
a
e
l
v
e
i
20
t
R
a
l
e
R
0
−2.0−1.5−1.0−0.500.51.01.52.0
Distance d (mm)
Distance d (mm)
EE-SX1088
Photomicrosensor (Transmissive)
53