2024年9月13日发(作者：权晏然)
元器件交易网
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
200 V
200 V
200 V
I
D25
R
DS(on)
42 A60mW
50 A45mW
58 A40mW
t
rr
£ 200 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
Maximum Ratings
200
200
±20
±30
42
50
58
168
200
232
42
50
58
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
G
S
TO-268 (D3) Case Style
(TAB)
(TAB)
TO-204 AE (IXFM)
S
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25°C
I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
,
T
J
£ 150°C, R
G
= 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10Nm/.
TO-204 = 18 g, TO-247 = 6 g
Features
•International standard packages
•Low R
DS (on)
HDMOS
TM
process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
-easy to drive and to protect
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Synchronous rectification
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•AC motor control
•Temperature and lighting controls
•Low voltage relays
Advantages
•Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
•High power surface mountable package
•High power density
91522H (2/98)
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
200
24
±100
T
J
= 25°C
T
J
= 125°C
200
1
V
V
nA
mA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1 - 4
元器件交易网
IXFH/IXFM42N20
IXFH/IXFM50N20
SymbolTest Conditions
(T
J
= 25°C, unless otherwise specified)
R
DS(on)
42N20
50N20
58N20
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2032
4400
800
285
18
15
72
16
190
35
95
0.25
25
20
90
25
220
50
110
V
GS
= 10 V, I
D
= 0.5 I
D25
IXFH/IXFM58N20IXFT50N20
IXFT58N20
TO-247 AD (IXFH) Outline
Characteristic Values
Min. .
0.060W
0.045W
0.040W
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1 W (External)
eter
.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.8120.32
20.8021.46
15.7516.26
3.553.65
4.325.49
5.46.2
1.652.13
-4.5
1.01.4
10.811.0
4.7
0.4
5.3
0.8
Inches
.
0.7800.800
0.8190.845
0.6100.640
0.1400.144
0.1700.216
0.2120.244
0.0650.084
-0.177
0.0400.055
0.4260.433
0.1850.209
0.0160.031
0.0870.102
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
(TO-247 and TO-204 Case styles)
0.42K/W
K/W
Source-Drain Diode
Symbol
I
S
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
42N20
50N20
58N20
42N20
50N20
58N20
42
50
58
168
200
232
1.5
200
300
1.5
2.6
19
23
A
A
A
A
A
A
V
ns
ns
mC
mC
A
A
1.52.49
I
SM
Repetitive;
pulse width limited by T
JM
V
SD
t
rr
Q
RM
I
RM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
F
= 25A,
-di/dt = 100 A/ms,
V
R
= 100 V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
TO-268AA (D
3
PAK)
eterInches
.
A4.95.1.193.201
A
1
2.72.9.106.114
A
2
.02.25.001.010
b1.151.45.045.057
b
2
1.92.1.75.83
C.4.65.016.026
D13.8014.00.543.551
E15.8516.05.624.632
13.313.6.524.535E
1
e 5.45 BSC .215 BSC
H18.7019.10.736.752
L2.402.70.094.106
L11.201.40.047.055
L21.001.15.039.045
L3 0.25 BSC .010 BSC
L43.804.10.150.161
Millimeter
.
38.6139.12
-22.22
6.4011.40
1.451.60
1.523.43
30.15BSC
10.6711.17
5.215.71
16.6417.14
11.1812.19
3.844.19
25.1626.66
Inches
.
1.5201.540
-0.875
0.2520.449
0.0570.063
0.0600.135
1.187BSC
0.4200.440
0.2050.225
0.6550.675
0.4400.480
0.1510.165
0.9911.050
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,5924,881,1065,017,5085,049,9615,187,1175,486,715
4,850,0724,931,8445,034,7965,063,3075,237,4815,381,025
2 - 4
元器件交易网
IXFH/IXFM42N20
IXFH/IXFM50N20
Fig. 1Output Characteristics
100
90
80
70
60
50
40
30
20
10
0
5V
IXFH/IXFM58N20IXFT50N20
IXFT58N20
Fig. 2 Input Admittance
100
90
80
70
60
50
40
30
20
10
0
T
J
= 25°C
V
GS
= 10V
9V
8V
7V
6V
I
D
-
A
m
p
e
r
e
s
I
D
-
A
m
p
e
r
e
s
T
J
= 25°C
V
DS
- Volts
V
GS
- Volts
Fig. 3R
DS(on)
vs. Drain Current
2.6
2.4
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
5150175
V
GS
= 10V
V
GS
= 15V
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50-255150
I
D
= 25A
I
D
- AmperesT
J
- Degrees C
Fig. 5Drain Current vs.
Case Temperature
80
70
60
58N20
50N20
42N20
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
1.1
V
GS(th)
BV
DSS
B
V
/
V
G
(
t
h
)
-
N
o
r
m
a
l
i
z
e
d
I
D
-
A
m
p
e
r
e
s
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
-50-255150
0.5
-50-255150
T
C
- Degrees CT
J
- Degrees C
© 2000 IXYS All rights reserved
3 - 4
元器件交易网
IXFH/IXFM42N20
IXFH/IXFM50N20
Fig.7Gate Charge Characteristic Curve
IXFH/IXFM58N20IXFT50N20
IXFT58N20
Fig.8Forward Bias Safe Operating Area
14
V
DS
= 100V
12
I = 10mA
G
I
D
= 50A
100
Limited by R
DS(on)
10µs
8
6
4
2
0
5150175200
I
D
-
A
m
p
e
r
e
s
V
G
E
-
V
o
l
t
s
10
100µs
10
1ms
10ms
100ms
1
110100
200
Gate Charge - nCoulombsV
DS
- Volts
Fig.9Capacitance Curves
4500
4000
3500
50
40
Fig.10 Source Current vs. Source
to Drain Voltage
C
iss
C
a
p
a
c
i
t
a
n
c
e
-
p
F
I
D
-
A
m
p
e
r
e
s
3000
2500
2000
1500
1000
500
0
05
f = 1MHz
V
DS
= 25V
30
20
10
0
0.4
T
J
= 125°C
C
oss
C
rss
T
J
= 25°C
101520250.60.81.01.21.4
V
DS
- VoltsV
SD
- Volts
Fig.11 Transient Thermal Impedance
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
-
K
/
W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single Pulse
0.001
0.000010.00010.0010.010.1110
Time - Seconds
© 2000 IXYS All rights reserved
4 - 4
2024年9月13日发(作者：权晏然)
元器件交易网
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
200 V
200 V
200 V
I
D25
R
DS(on)
42 A60mW
50 A45mW
58 A40mW
t
rr
£ 200 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
Maximum Ratings
200
200
±20
±30
42
50
58
168
200
232
42
50
58
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
G
S
TO-268 (D3) Case Style
(TAB)
(TAB)
TO-204 AE (IXFM)
S
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25°C
I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
,
T
J
£ 150°C, R
G
= 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10Nm/.
TO-204 = 18 g, TO-247 = 6 g
Features
•International standard packages
•Low R
DS (on)
HDMOS
TM
process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
-easy to drive and to protect
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Synchronous rectification
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•AC motor control
•Temperature and lighting controls
•Low voltage relays
Advantages
•Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
•High power surface mountable package
•High power density
91522H (2/98)
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
200
24
±100
T
J
= 25°C
T
J
= 125°C
200
1
V
V
nA
mA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1 - 4
元器件交易网
IXFH/IXFM42N20
IXFH/IXFM50N20
SymbolTest Conditions
(T
J
= 25°C, unless otherwise specified)
R
DS(on)
42N20
50N20
58N20
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2032
4400
800
285
18
15
72
16
190
35
95
0.25
25
20
90
25
220
50
110
V
GS
= 10 V, I
D
= 0.5 I
D25
IXFH/IXFM58N20IXFT50N20
IXFT58N20
TO-247 AD (IXFH) Outline
Characteristic Values
Min. .
0.060W
0.045W
0.040W
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1 W (External)
eter
.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.8120.32
20.8021.46
15.7516.26
3.553.65
4.325.49
5.46.2
1.652.13
-4.5
1.01.4
10.811.0
4.7
0.4
5.3
0.8
Inches
.
0.7800.800
0.8190.845
0.6100.640
0.1400.144
0.1700.216
0.2120.244
0.0650.084
-0.177
0.0400.055
0.4260.433
0.1850.209
0.0160.031
0.0870.102
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
(TO-247 and TO-204 Case styles)
0.42K/W
K/W
Source-Drain Diode
Symbol
I
S
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
42N20
50N20
58N20
42N20
50N20
58N20
42
50
58
168
200
232
1.5
200
300
1.5
2.6
19
23
A
A
A
A
A
A
V
ns
ns
mC
mC
A
A
1.52.49
I
SM
Repetitive;
pulse width limited by T
JM
V
SD
t
rr
Q
RM
I
RM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
F
= 25A,
-di/dt = 100 A/ms,
V
R
= 100 V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
TO-268AA (D
3
PAK)
eterInches
.
A4.95.1.193.201
A
1
2.72.9.106.114
A
2
.02.25.001.010
b1.151.45.045.057
b
2
1.92.1.75.83
C.4.65.016.026
D13.8014.00.543.551
E15.8516.05.624.632
13.313.6.524.535E
1
e 5.45 BSC .215 BSC
H18.7019.10.736.752
L2.402.70.094.106
L11.201.40.047.055
L21.001.15.039.045
L3 0.25 BSC .010 BSC
L43.804.10.150.161
Millimeter
.
38.6139.12
-22.22
6.4011.40
1.451.60
1.523.43
30.15BSC
10.6711.17
5.215.71
16.6417.14
11.1812.19
3.844.19
25.1626.66
Inches
.
1.5201.540
-0.875
0.2520.449
0.0570.063
0.0600.135
1.187BSC
0.4200.440
0.2050.225
0.6550.675
0.4400.480
0.1510.165
0.9911.050
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,5924,881,1065,017,5085,049,9615,187,1175,486,715
4,850,0724,931,8445,034,7965,063,3075,237,4815,381,025
2 - 4
元器件交易网
IXFH/IXFM42N20
IXFH/IXFM50N20
Fig. 1Output Characteristics
100
90
80
70
60
50
40
30
20
10
0
5V
IXFH/IXFM58N20IXFT50N20
IXFT58N20
Fig. 2 Input Admittance
100
90
80
70
60
50
40
30
20
10
0
T
J
= 25°C
V
GS
= 10V
9V
8V
7V
6V
I
D
-
A
m
p
e
r
e
s
I
D
-
A
m
p
e
r
e
s
T
J
= 25°C
V
DS
- Volts
V
GS
- Volts
Fig. 3R
DS(on)
vs. Drain Current
2.6
2.4
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
5150175
V
GS
= 10V
V
GS
= 15V
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50-255150
I
D
= 25A
I
D
- AmperesT
J
- Degrees C
Fig. 5Drain Current vs.
Case Temperature
80
70
60
58N20
50N20
42N20
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
1.1
V
GS(th)
BV
DSS
B
V
/
V
G
(
t
h
)
-
N
o
r
m
a
l
i
z
e
d
I
D
-
A
m
p
e
r
e
s
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
-50-255150
0.5
-50-255150
T
C
- Degrees CT
J
- Degrees C
© 2000 IXYS All rights reserved
3 - 4
元器件交易网
IXFH/IXFM42N20
IXFH/IXFM50N20
Fig.7Gate Charge Characteristic Curve
IXFH/IXFM58N20IXFT50N20
IXFT58N20
Fig.8Forward Bias Safe Operating Area
14
V
DS
= 100V
12
I = 10mA
G
I
D
= 50A
100
Limited by R
DS(on)
10µs
8
6
4
2
0
5150175200
I
D
-
A
m
p
e
r
e
s
V
G
E
-
V
o
l
t
s
10
100µs
10
1ms
10ms
100ms
1
110100
200
Gate Charge - nCoulombsV
DS
- Volts
Fig.9Capacitance Curves
4500
4000
3500
50
40
Fig.10 Source Current vs. Source
to Drain Voltage
C
iss
C
a
p
a
c
i
t
a
n
c
e
-
p
F
I
D
-
A
m
p
e
r
e
s
3000
2500
2000
1500
1000
500
0
05
f = 1MHz
V
DS
= 25V
30
20
10
0
0.4
T
J
= 125°C
C
oss
C
rss
T
J
= 25°C
101520250.60.81.01.21.4
V
DS
- VoltsV
SD
- Volts
Fig.11 Transient Thermal Impedance
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
-
K
/
W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single Pulse
0.001
0.000010.00010.0010.010.1110
Time - Seconds
© 2000 IXYS All rights reserved
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