2024年10月29日发(作者：房俊友)
元器件交易网
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
December 2001
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Features
•Logic Level Gate Drive
•Internal Voltage Clamp
•ESD Gate Protection
•T
J
= 175
o
C
•Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
HGTP14N36G3VL
HGT1S14N36G3VL
HGT1S14N36G3VLS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
14N36GVL
14N36GVL
14N36GVL
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE:When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
The development type number for this device is TA49021.
GATE
R
1
R
2
EMITTER
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 5V, T
C
= +100
o
C. . . . . . . . . . . . . . . . . . . . . .I
C100
Gate-Emitter Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . .I
SCIS
at L = 2.3mH, T
C
= + 175
o
C. . . . . . . . . . . . . . . . . . . . . .I
SCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, T
C
= +25
o
C. . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD
NOTE:May be exceeded if I
GEM
is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
SYMBOL
BV
CER
TEST CONDITIONS
I
C
= 10mA,
V
GE
= 0V
R
GE
= 1kΩ
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= -40
o
C
Gate-Emitter Plateau VoltageV
GEP
I
C
= 7A,
V
CE
= 12V
I
C
= 7A,
V
CE
= 12V
I
C
= 7A
R
G
= 1000Ω
I
C
= 10mA
V
CE
= 250V
R
GE
= 1kΩ
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +25
o
C
V
GE
= ±10V
I
GES
= ±2mA
I
C
= 7A, R
L
= 28Ω
R
G
= 25Ω, L = 550µH,
V
CL
= 300V, V
GE
= 5V,
T
C
= +175
o
C
L = 2.3mH,
V
G
= 5V,
T
C
= +175
o
C
T
C
= +25
o
C
MIN
320
330
320
-
TYP
355
360
350
2.7
MAX
400
390
385
-
UNITS
V
V
V
V
Gate ChargeQ
G(ON)
-24-nC
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
BV
CE(CL)
350380410V
BV
ECS
I
CER
24
-
-
-
-
-
-
1.3
28
-
-
-
25
250
V
µA
µA
V
V
V
V
V
Collector-Emitter Saturation VoltageV
CE(SAT)
I
C
= 7A
V
GE
= 4.5V
1.251.45
1.15
1.6
1.7
1.8
1.6
2.2
2.9
2.2
I
C
= 14A
V
GE
= 5V
Gate-Emitter Threshold VoltageV
GE(TH)
I
C
= 1mA
V
CE
= V
GE
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
R
1
R
2
I
GES
BV
GES
t
D(OFF)I
+
t
F(OFF)I
-
10
±330
±12
-
75
20
±500
±14
7
-
30
±1000
-
-
Ω
kΩ
µA
V
µs
Inductive Use TestI
SCIS
12
17
-
-
-
-
-
-
1.5
o
A
A
C/WThermal ResistanceR
θJC
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, V
CE
= 10V
25
I
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
I
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
40
10V
30
4.5V
5.0V
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= +25
o
C
20
15
20
4.0V
10
+175
o
C
5
-40
o
C
0
12 345
+25
o
C
3.5V
10
3.0V
2.5V
0
02468
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE ER CHARACTERISTICS FIGURE TION CHARACTERISTICS
I
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
T
C
30
25
20
15
10
5
0
0
= +175
o
C
V
GE
= 5.0V
I
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
35
35
V
GE
= 4.5V
30
25
20
15
10
5
0
-40
o
C
+25
o
C
+175
o
C
V
GE
= 4.5V
V
GE
= 4.0V
4
123
V
CE(SAT)
, SATURATION VOLTAGE (V)
5
012345
V
CE(SAT)
, SATURATION VOLTAGE (V)
FIGURE TOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
1.35
V
C
E
(
S
A
T
)
,
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
FIGURE TOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
2.25
V
C
E
(
S
A
T
)
,
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
I
CE
= 7AI
CE
= 14A
V
GE
= 4.0V
V
GE
= 4.0V
1.25
2.00
V
GE
= 4.5V
1.15
1.75
V
GE
= 4.5V
1.05
V
GE
= 5.0V
-25+25+75+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
1.50
V
GE
= 5.0V
-25+25+75
+125
+175
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE TION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
FIGURE TION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
(Continued)
I
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
18
16
14
12
10
8
6
4
2
0
+25+50+75+125+100
T
C
, CASE TEMPERATURE (
o
C)
+150+175
V
GE
= 5V
V
G
E
(
T
H
)
,
N
O
R
M
A
L
I
Z
E
D
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-25
+25+75+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
I
CE
= 1ma
FIGURE TOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE IZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
7.0
1E4
V
ECS
= 20V
t
(
O
F
F
)
I
,
T
U
R
N
O
F
F
T
I
M
E
(
µ
s
)
V
CE
= 300V, V
GE
= 5V
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
R
GE
= 25Ω, L = 550µH
R
L
= 37Ω,
I
CE
= 7A
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
µ
A
)
1E3
1E2
1E1
V
CES
= 250V
1E0
1E-1
+20+60+100+140+180
T
J
, JUNCTION TEMPERATURE (
o
C)
+25+50
T
J
+ 75+100+125+150+175
, JUNCTION TEMPERATURE (
o
C)
FIGURE E CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE -OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
(Continued)
25
I
C
,
I
N
D
U
C
T
I
V
E
S
W
I
T
C
H
I
N
G
C
U
R
R
E
N
T
(
A
)
+25
o
C
20
E
A
S
,
E
N
E
R
G
Y
(
m
J
)
V
GE
= 5V
650
600
550
500
450
400
350
300
250
200
5
0
24
6
810
L, INDUCTANCE (mH)
150
0
2
4
6
L, INDUCTANCE (mH)
8
10
+175
o
C
+25
o
C
V
GE
= 5V
+175
o
C
15
10
FIGURE CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
2000
1800
1600
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
1400
1200
1000
800
600
400
200
0
05
C
OES
C
RES
10152025
C
IES
FIGURE CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
REF I
G
= 1mA, R
L
= 1.7Ω, T
C
= +25
o
C
V
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
FREQUENCY = 1MHz
12
10
8
6
V
CE
= 4V
4
V
CE
= 8V
2
0
0
5
10
15
20
25
30
Q
G
, GATE CHARGE (nC)
6
5
4
3
2
1
0
V
G
E
,
G
A
T
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
V
CE
= 12V
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE TANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
Typical Performance Curves
(Continued)
Z
θ
J
C
,
N
O
R
M
A
L
I
Z
E
D
T
H
E
R
M
A
L
R
E
S
P
O
N
S
E
355
10
0
B
V
C
E
R
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
B
K
D
N
V
O
L
T
A
G
E
(
V
)
0.5
0.2
10
-1
0.1
PD
0.05
0.02
0.01
SINGLE PULSE
10
-4
350
345
340
25
o
C
335
330
325
175
o
C
t
1
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
10
-2
10
-5
10
-3
10
-2
10
-1
10
0
10
1
0
200010000
t
1
,RECTANGULAR PULSE DURATION (s)
R
GE
, GATE-TO- EMITTER RESISTANCE (Ω)
FIGURE IZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE OWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
R
L
2.3mH
V
DD
L = 550µH
C
1/R
G
= 1/R
GEN
+ 1/R
GE
DUT
G
E
R
GEN
= 50Ω
10V
R
GE
= 50Ω
E
G
DUT
+
V
CC
300V
C
R
GEN
= 25Ω
5V
R
G
-
FIGURE CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE D INDUCTIVE SWITCHING TIME
TEST CIRCUIT
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Handling Precautions for IGBT’s
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBT’s can be
handled safely if the following basic precautions are taken:
to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as †“ECCOSORBD LD26” or equivalent.
devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
of soldering irons should be grounded.
s should never be inserted into or removed from
circuits with power on.
Voltage Rating -The gate-voltage rating of V
GEM
may be exceeded if I
GEM
is limited to 10mA.
† Trademark Emerson and Cumming, Inc
.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
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RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or2. A critical component is any component of a life
systems which, (a) are intended for surgical implant intosupport device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whosebe reasonably expected to cause the failure of the life
failure to perform when properly used in accordancesupport device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
PreliminaryFirst Production
No Identification NeededFull Production
ObsoleteNot In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
2024年10月29日发(作者：房俊友)
元器件交易网
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
December 2001
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Features
•Logic Level Gate Drive
•Internal Voltage Clamp
•ESD Gate Protection
•T
J
= 175
o
C
•Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
HGTP14N36G3VL
HGT1S14N36G3VL
HGT1S14N36G3VLS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
14N36GVL
14N36GVL
14N36GVL
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE:When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
The development type number for this device is TA49021.
GATE
R
1
R
2
EMITTER
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 5V, T
C
= +100
o
C. . . . . . . . . . . . . . . . . . . . . .I
C100
Gate-Emitter Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . .I
SCIS
at L = 2.3mH, T
C
= + 175
o
C. . . . . . . . . . . . . . . . . . . . . .I
SCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, T
C
= +25
o
C. . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD
NOTE:May be exceeded if I
GEM
is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
SYMBOL
BV
CER
TEST CONDITIONS
I
C
= 10mA,
V
GE
= 0V
R
GE
= 1kΩ
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= -40
o
C
Gate-Emitter Plateau VoltageV
GEP
I
C
= 7A,
V
CE
= 12V
I
C
= 7A,
V
CE
= 12V
I
C
= 7A
R
G
= 1000Ω
I
C
= 10mA
V
CE
= 250V
R
GE
= 1kΩ
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +25
o
C
V
GE
= ±10V
I
GES
= ±2mA
I
C
= 7A, R
L
= 28Ω
R
G
= 25Ω, L = 550µH,
V
CL
= 300V, V
GE
= 5V,
T
C
= +175
o
C
L = 2.3mH,
V
G
= 5V,
T
C
= +175
o
C
T
C
= +25
o
C
MIN
320
330
320
-
TYP
355
360
350
2.7
MAX
400
390
385
-
UNITS
V
V
V
V
Gate ChargeQ
G(ON)
-24-nC
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
BV
CE(CL)
350380410V
BV
ECS
I
CER
24
-
-
-
-
-
-
1.3
28
-
-
-
25
250
V
µA
µA
V
V
V
V
V
Collector-Emitter Saturation VoltageV
CE(SAT)
I
C
= 7A
V
GE
= 4.5V
1.251.45
1.15
1.6
1.7
1.8
1.6
2.2
2.9
2.2
I
C
= 14A
V
GE
= 5V
Gate-Emitter Threshold VoltageV
GE(TH)
I
C
= 1mA
V
CE
= V
GE
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
R
1
R
2
I
GES
BV
GES
t
D(OFF)I
+
t
F(OFF)I
-
10
±330
±12
-
75
20
±500
±14
7
-
30
±1000
-
-
Ω
kΩ
µA
V
µs
Inductive Use TestI
SCIS
12
17
-
-
-
-
-
-
1.5
o
A
A
C/WThermal ResistanceR
θJC
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, V
CE
= 10V
25
I
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
I
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
40
10V
30
4.5V
5.0V
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= +25
o
C
20
15
20
4.0V
10
+175
o
C
5
-40
o
C
0
12 345
+25
o
C
3.5V
10
3.0V
2.5V
0
02468
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE ER CHARACTERISTICS FIGURE TION CHARACTERISTICS
I
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
T
C
30
25
20
15
10
5
0
0
= +175
o
C
V
GE
= 5.0V
I
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
35
35
V
GE
= 4.5V
30
25
20
15
10
5
0
-40
o
C
+25
o
C
+175
o
C
V
GE
= 4.5V
V
GE
= 4.0V
4
123
V
CE(SAT)
, SATURATION VOLTAGE (V)
5
012345
V
CE(SAT)
, SATURATION VOLTAGE (V)
FIGURE TOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
1.35
V
C
E
(
S
A
T
)
,
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
FIGURE TOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
2.25
V
C
E
(
S
A
T
)
,
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
I
CE
= 7AI
CE
= 14A
V
GE
= 4.0V
V
GE
= 4.0V
1.25
2.00
V
GE
= 4.5V
1.15
1.75
V
GE
= 4.5V
1.05
V
GE
= 5.0V
-25+25+75+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
1.50
V
GE
= 5.0V
-25+25+75
+125
+175
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE TION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
FIGURE TION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
(Continued)
I
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
C
U
R
R
E
N
T
(
A
)
18
16
14
12
10
8
6
4
2
0
+25+50+75+125+100
T
C
, CASE TEMPERATURE (
o
C)
+150+175
V
GE
= 5V
V
G
E
(
T
H
)
,
N
O
R
M
A
L
I
Z
E
D
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-25
+25+75+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
I
CE
= 1ma
FIGURE TOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE IZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
7.0
1E4
V
ECS
= 20V
t
(
O
F
F
)
I
,
T
U
R
N
O
F
F
T
I
M
E
(
µ
s
)
V
CE
= 300V, V
GE
= 5V
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
R
GE
= 25Ω, L = 550µH
R
L
= 37Ω,
I
CE
= 7A
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
µ
A
)
1E3
1E2
1E1
V
CES
= 250V
1E0
1E-1
+20+60+100+140+180
T
J
, JUNCTION TEMPERATURE (
o
C)
+25+50
T
J
+ 75+100+125+150+175
, JUNCTION TEMPERATURE (
o
C)
FIGURE E CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE -OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
(Continued)
25
I
C
,
I
N
D
U
C
T
I
V
E
S
W
I
T
C
H
I
N
G
C
U
R
R
E
N
T
(
A
)
+25
o
C
20
E
A
S
,
E
N
E
R
G
Y
(
m
J
)
V
GE
= 5V
650
600
550
500
450
400
350
300
250
200
5
0
24
6
810
L, INDUCTANCE (mH)
150
0
2
4
6
L, INDUCTANCE (mH)
8
10
+175
o
C
+25
o
C
V
GE
= 5V
+175
o
C
15
10
FIGURE CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
2000
1800
1600
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
1400
1200
1000
800
600
400
200
0
05
C
OES
C
RES
10152025
C
IES
FIGURE CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
REF I
G
= 1mA, R
L
= 1.7Ω, T
C
= +25
o
C
V
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
FREQUENCY = 1MHz
12
10
8
6
V
CE
= 4V
4
V
CE
= 8V
2
0
0
5
10
15
20
25
30
Q
G
, GATE CHARGE (nC)
6
5
4
3
2
1
0
V
G
E
,
G
A
T
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
V
CE
= 12V
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE TANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
Typical Performance Curves
(Continued)
Z
θ
J
C
,
N
O
R
M
A
L
I
Z
E
D
T
H
E
R
M
A
L
R
E
S
P
O
N
S
E
355
10
0
B
V
C
E
R
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
B
K
D
N
V
O
L
T
A
G
E
(
V
)
0.5
0.2
10
-1
0.1
PD
0.05
0.02
0.01
SINGLE PULSE
10
-4
350
345
340
25
o
C
335
330
325
175
o
C
t
1
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
10
-2
10
-5
10
-3
10
-2
10
-1
10
0
10
1
0
200010000
t
1
,RECTANGULAR PULSE DURATION (s)
R
GE
, GATE-TO- EMITTER RESISTANCE (Ω)
FIGURE IZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE OWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
R
L
2.3mH
V
DD
L = 550µH
C
1/R
G
= 1/R
GEN
+ 1/R
GE
DUT
G
E
R
GEN
= 50Ω
10V
R
GE
= 50Ω
E
G
DUT
+
V
CC
300V
C
R
GEN
= 25Ω
5V
R
G
-
FIGURE CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE D INDUCTIVE SWITCHING TIME
TEST CIRCUIT
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Handling Precautions for IGBT’s
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBT’s can be
handled safely if the following basic precautions are taken:
to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as †“ECCOSORBD LD26” or equivalent.
devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
of soldering irons should be grounded.
s should never be inserted into or removed from
circuits with power on.
Voltage Rating -The gate-voltage rating of V
GEM
may be exceeded if I
GEM
is limited to 10mA.
† Trademark Emerson and Cumming, Inc
.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
©2001 Fairchild Semiconductor CorporationHGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
元器件交易网
TRADEMARKS
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Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or2. A critical component is any component of a life
systems which, (a) are intended for surgical implant intosupport device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whosebe reasonably expected to cause the failure of the life
failure to perform when properly used in accordancesupport device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
PreliminaryFirst Production
No Identification NeededFull Production
ObsoleteNot In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4