2024年4月12日发(作者：华斯伯)
元器件交易网
FFPF10U150S
FFPF10U150S
Features
•High voltage and high reliability
•High speed switching
•Low forward voltage
Applications
•Suitable for damper diode in horizontal
deflection circuits
1 2
TO-220F
1. Cathode 2. Anode
DAMPER DIODE
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 125°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
1500
10
100
- 65 to +150
Units
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
2.0
Units
°C/W
Electrical Characteristics
T
C
=25 °C unless otherwise noted
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 10A
I
F
= 10A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
(I
F
=1A, di/dt = 50A/µs)
Maximum Forward Recovery Time
(I
F
=6.5A, di/dt = 50A/µs)
Min.
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
1.8
1.7
µA
15
200
150
300
14
ns
ns
V
Units
V
I
RM
*
t
rr
t
fr
Maximum Forward Recovery VoltageV
FRM
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor InternationalRev. F, September 2000
元器件交易网
FFPF10U150S
Typical Characteristics
100
1000
R
e
v
e
r
s
e
C
u
r
r
e
n
t
,
I
R
[
µ
A
]
100
[
A
]
10
10
T
J
= 125C
o
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
F
T
J
= 125C
o
1
T
J
= 100C
0.1
o
1
T
J
= 25C
o
0.01
T
J
= 25C
o
0.1
0.00.40.81.21.62.0
0.001
001500
Forward Voltage , V
F
[V]
Reverse Voltage , V
R
[V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
300
400
Figure 2. Typical Reverse Current
vs. Reverse Voltage
250
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
T
i
m
e
,
t
r
r
[
n
s
]
Typical Capacitance
at 0V = 220 pF
300
C
a
p
a
c
i
t
a
n
c
e
,
C
j
[
p
F
]
200
di/dt = 50A/
µ
s
200
150
100
di/dt = 100A/
µ
s
100
50
0
0.1
0
110100
Reverse Voltage , V
R
[V]
Forward Current , I
F
[A]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. Forward Current
15
[
n
C
]
r
r
S
t
o
r
e
d
R
e
c
o
v
e
r
y
C
h
a
r
g
e
,
Q
1500
A
v
e
r
a
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
F
(
A
V
)
[
A
]
2000
10
di/dt = 100A/
µ
s
1000
di/dt = 50A/
µ
s
500
5
0
0
80100120
o
140160
Forward Current , I
F
[A]
Case Temperature , T
C
[C]
Figure 5. Typical Stored Charge
vs. Forward Current
©2000 Fairchild Semiconductor International
Figure 6. Forward Current Derating Curve
Rev. F, September 2000
C
D
2024年4月12日发(作者：华斯伯)
元器件交易网
FFPF10U150S
FFPF10U150S
Features
•High voltage and high reliability
•High speed switching
•Low forward voltage
Applications
•Suitable for damper diode in horizontal
deflection circuits
1 2
TO-220F
1. Cathode 2. Anode
DAMPER DIODE
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 125°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
1500
10
100
- 65 to +150
Units
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
2.0
Units
°C/W
Electrical Characteristics
T
C
=25 °C unless otherwise noted
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 10A
I
F
= 10A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
(I
F
=1A, di/dt = 50A/µs)
Maximum Forward Recovery Time
(I
F
=6.5A, di/dt = 50A/µs)
Min.
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
1.8
1.7
µA
15
200
150
300
14
ns
ns
V
Units
V
I
RM
*
t
rr
t
fr
Maximum Forward Recovery VoltageV
FRM
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor InternationalRev. F, September 2000
元器件交易网
FFPF10U150S
Typical Characteristics
100
1000
R
e
v
e
r
s
e
C
u
r
r
e
n
t
,
I
R
[
µ
A
]
100
[
A
]
10
10
T
J
= 125C
o
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
F
T
J
= 125C
o
1
T
J
= 100C
0.1
o
1
T
J
= 25C
o
0.01
T
J
= 25C
o
0.1
0.00.40.81.21.62.0
0.001
001500
Forward Voltage , V
F
[V]
Reverse Voltage , V
R
[V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
300
400
Figure 2. Typical Reverse Current
vs. Reverse Voltage
250
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
T
i
m
e
,
t
r
r
[
n
s
]
Typical Capacitance
at 0V = 220 pF
300
C
a
p
a
c
i
t
a
n
c
e
,
C
j
[
p
F
]
200
di/dt = 50A/
µ
s
200
150
100
di/dt = 100A/
µ
s
100
50
0
0.1
0
110100
Reverse Voltage , V
R
[V]
Forward Current , I
F
[A]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. Forward Current
15
[
n
C
]
r
r
S
t
o
r
e
d
R
e
c
o
v
e
r
y
C
h
a
r
g
e
,
Q
1500
A
v
e
r
a
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
F
(
A
V
)
[
A
]
2000
10
di/dt = 100A/
µ
s
1000
di/dt = 50A/
µ
s
500
5
0
0
80100120
o
140160
Forward Current , I
F
[A]
Case Temperature , T
C
[C]
Figure 5. Typical Stored Charge
vs. Forward Current
©2000 Fairchild Semiconductor International
Figure 6. Forward Current Derating Curve
Rev. F, September 2000
C
D