2024年4月17日发(作者：光忻)
SXA-389(Z)
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipo-
lar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent performance
from wafer to wafer and lot to lot. These amplifiers are specially designed
for use as driver devices for infrastructure equipment in the 400MHz
to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
d
B
m
50
45
40
35
30
25
20
15
10
5
0
850 MHz1960 MHz2140 MHz2450 MHz
OIP3
P1dB
Gain
Features
2024年4月17日发(作者：光忻)
SXA-389(Z)
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipo-
lar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent performance
from wafer to wafer and lot to lot. These amplifiers are specially designed
for use as driver devices for infrastructure equipment in the 400MHz
to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
d
B
m
50
45
40
35
30
25
20
15
10
5
0
850 MHz1960 MHz2140 MHz2450 MHz
OIP3
P1dB
Gain
Features