2024年4月23日发(作者：顿芷琪)
元器件交易网
STB75NF75
STP75NF75 STP75NF75FP
N-CHANNEL 75V - 0.0095 Ω - 80A TO-220/TO-220FP/D²PAK
STripFET™ II POWER MOSFET
TYPE
STB75NF75
STP75NF75
STP75NF75FP
s
s
s
s
V
DSS
75 V
75 V
75 V
R
DS(on)
<0.011
Ω
<0.011
Ω
<0.011
Ω
I
D
80 A
80 A
80 A(*)
3
TYPICAL R
DS
(on) = 0.0095 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
1
2
1
3
TO-220FP
D
2
PAK
TO-263
(Suffix “T4”)
2
3
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.
TO-220
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
DC MOTOR CONTROL
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
SymbolParameter
STB75NF75
STP75NF75
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
•)
P
tot
dv/dt
(1)
E
AS
(2)
V
ISO
T
stg
T
j
due to Rth value
Value
STP75NF75FP
75
75
± 20
80
70
320
300
2.0
12
700
------
-55 to 175
2000
80(*)
70(*)
320(*)
45
0.3
Unit
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
Ω
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
(
•)
Pulse width limited by safe operating area.
(*)
Refer to SOA for the max allowable current values on FP-type
June 2003
(1) I
SD
≤
80A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 37.5V
1/11
NEW DATASHEET ACCORDING TO PCN DSG20023123 MARKING: P75NF75 @
元器件交易网
STB75NF75 STP75NF75 STP75NF75FP
THERMAL DATA
D
2
PAK
TO-220
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
( 1.6 mm from case, for 10 sec.)
Max
Max
0.5
62.5
300
TO-220FP
3.33°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 20 V
Min.
75
1
10
±100
V
µA
µA
nA
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 40 A
Min.
2
Typ.
3
0.0095
Max.
4
0.011
Unit
V
Ω
DYNAMIC
Symbol
g
fs
(*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15 V I
D
=40 A
.
20
3700
730
240
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/11
2024年4月23日发(作者：顿芷琪)
元器件交易网
STB75NF75
STP75NF75 STP75NF75FP
N-CHANNEL 75V - 0.0095 Ω - 80A TO-220/TO-220FP/D²PAK
STripFET™ II POWER MOSFET
TYPE
STB75NF75
STP75NF75
STP75NF75FP
s
s
s
s
V
DSS
75 V
75 V
75 V
R
DS(on)
<0.011
Ω
<0.011
Ω
<0.011
Ω
I
D
80 A
80 A
80 A(*)
3
TYPICAL R
DS
(on) = 0.0095 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
1
2
1
3
TO-220FP
D
2
PAK
TO-263
(Suffix “T4”)
2
3
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.
TO-220
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
DC MOTOR CONTROL
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
SymbolParameter
STB75NF75
STP75NF75
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
•)
P
tot
dv/dt
(1)
E
AS
(2)
V
ISO
T
stg
T
j
due to Rth value
Value
STP75NF75FP
75
75
± 20
80
70
320
300
2.0
12
700
------
-55 to 175
2000
80(*)
70(*)
320(*)
45
0.3
Unit
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
Ω
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
(
•)
Pulse width limited by safe operating area.
(*)
Refer to SOA for the max allowable current values on FP-type
June 2003
(1) I
SD
≤
80A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 37.5V
1/11
NEW DATASHEET ACCORDING TO PCN DSG20023123 MARKING: P75NF75 @
元器件交易网
STB75NF75 STP75NF75 STP75NF75FP
THERMAL DATA
D
2
PAK
TO-220
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
( 1.6 mm from case, for 10 sec.)
Max
Max
0.5
62.5
300
TO-220FP
3.33°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 20 V
Min.
75
1
10
±100
V
µA
µA
nA
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 40 A
Min.
2
Typ.
3
0.0095
Max.
4
0.011
Unit
V
Ω
DYNAMIC
Symbol
g
fs
(*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15 V I
D
=40 A
.
20
3700
730
240
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/11