2024年5月11日发(作者：滕忆曼)
FreescaleSemiconductor
TechnicalData
DocumentNumber:MW7IC008N
Rev.3,12/2013
RFLDMOSWidebandIntegrated
PowerAmplifier
TheMW7IC008Nwidebandintegratedcircuitisdesignedwithon--chip
lti--stage
structureisratedfor24to32voltoperationandcoversmostnarrow
bandwidthcommunicationapplicationformats.
DriverApplications
TypicalCWPerformance:V
DD
=28Volts,I
DQ1
=25mA,I
DQ2
=75mA
Frequency
100MHz@11WCW
400MHz@9WCW
900MHz@6.5WCW
G
ps
(dB)
23.5
22.5
23.5
PAE
(%)
55
41
34
MW7IC008NT1
100--1000MHz,8WPEAK,28V
RFLDMOSWIDEBAND
INTEGRATEDPOWERAMPLIFIER
CapableofHandling10:1VSWR,@32Vdc,900MHz,P
out
=6.5WattsCW
(3dBInputOverdrivefromRatedP
out
)
Stableintoa5:rsBelow--60dBc@1mWto8WattsCW
P
out
@900MHz
TypicalP
out
@1dBCompressionPoint≃11WattsCW@100MHz,
9WattsCW@400MHz,6.5WattsCW@900MHz
Features
Broadband,SingleMatchingNetworkfrom
20to1000MHz
IntegratedQuiescentCurrentTemperatureCompensationwith
Enable/DisableFunction
(1)
IntegratedESDProtection
InTapeandReel.T1Suffix=1,000Units,16mmTapeWidth,13--inchReel.
PQFN88
PLASTIC
V
TTS1
V
TTS2
N
C
QuiescentCurrent
TemperatureCompensation
(1)
V
GS1
RF
inS1
V
GS2
RF
outS2
/V
DS2
V
GLS1
NC
NC
NC
RF
inS1
V
GS1
1
2
3
4
5
6
242322212019
R
F
o
u
t
S
1
/
V
D
S
1
R
F
i
n
S
2
N
C
V
G
S
2
V
T
T
S
2
18
17
16
15
14
13
789101112
V
T
T
S
1
V
G
L
S
2
N
C
N
C
N
C
N
C
NC
NC
NC
NC
NC
RF
outS2
/V
DS2
RF
outS1
/V
DS1
RF
inS2
nections
oAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl
tp:///Documentation/ApplicationNotes--AN1977orAN1987.
FreescaleSemiconductor,Inc.,2009,htsreserved.
MW7IC008NT1
1
RFDeviceData
FreescaleSemiconductor,Inc.
mRatings
Rating
Drain--SourceVoltage
Gate--SourceVoltage
OperatingVoltage
StorageTemperatureRange
OperatingJunctionTemperature
100MHzCWOperation@T
A
=25C
(3)
400MHzCWOperation@T
A
=25C
(3)
900MHzCWOperation@T
A
=25C
(3)
InputPower100MHz
400MHz
900MHz
P
in
Symbol
V
DSS
V
GS
V
DD
T
stg
T
J
CW
Value
--0.5,+65
--6.0,+12
32,+0
--65to+150
150
11
6
5
27
23
38
Unit
Vdc
Vdc
Vdc
C
C
W
W
W
dBm
lCharacteristics
Characteristic
ThermalResistance,JunctiontoCase
(CWSignal@100MHz)
(CaseTemperature82C,P
out
=11WCW)
(CWSignal@400MHz)
(CaseTemperature87C,P
out
=9WCW)
(CWSignal@900MHz)
(CaseTemperature86C,P
out
=6.5WCW)
Symbol
R
JC
Stage1,28Vdc,I
DQ1
=25mA
Stage2,28Vdc,I
DQ2
=75mA
Stage1,28Vdc,I
DQ1
=25mA
Stage2,28Vdc,I
DQ2
=75mA
Stage1,28Vdc,I
DQ1
=25mA
Stage2,28Vdc,I
DQ2
=75mA
5.3
4.9
Value
(1,2)
Unit
C/W
4.4
2.7
3.5
3.2
tectionCharacteristics
TestMethodology
HumanBodyModel(perJESD22--A114)
MachineModel(perEIA/JESD22--A115)
ChargeDeviceModel(perJESD22--C101)
Class
1B
A
III
reSensitivityLevel
TestMethodology
PerJESD22--A113,IPC/JEDECJ--STD--020
Rating
3
PackagePeakTemperature
260
Unit
C
lculatoravailableat/Software&Tools/DevelopmentTools/CalculatorstoaccessMTTF
calculatorsbyproduct.
oAN1955,tp:///rf.
SelectDocumentation/ApplicationNotes--AN1955.
ngsFcalculator(referencedinNote1).
MW7IC008NT1
2
RFDeviceData
FreescaleSemiconductor,Inc.
2024年5月11日发(作者：滕忆曼)
FreescaleSemiconductor
TechnicalData
DocumentNumber:MW7IC008N
Rev.3,12/2013
RFLDMOSWidebandIntegrated
PowerAmplifier
TheMW7IC008Nwidebandintegratedcircuitisdesignedwithon--chip
lti--stage
structureisratedfor24to32voltoperationandcoversmostnarrow
bandwidthcommunicationapplicationformats.
DriverApplications
TypicalCWPerformance:V
DD
=28Volts,I
DQ1
=25mA,I
DQ2
=75mA
Frequency
100MHz@11WCW
400MHz@9WCW
900MHz@6.5WCW
G
ps
(dB)
23.5
22.5
23.5
PAE
(%)
55
41
34
MW7IC008NT1
100--1000MHz,8WPEAK,28V
RFLDMOSWIDEBAND
INTEGRATEDPOWERAMPLIFIER
CapableofHandling10:1VSWR,@32Vdc,900MHz,P
out
=6.5WattsCW
(3dBInputOverdrivefromRatedP
out
)
Stableintoa5:rsBelow--60dBc@1mWto8WattsCW
P
out
@900MHz
TypicalP
out
@1dBCompressionPoint≃11WattsCW@100MHz,
9WattsCW@400MHz,6.5WattsCW@900MHz
Features
Broadband,SingleMatchingNetworkfrom
20to1000MHz
IntegratedQuiescentCurrentTemperatureCompensationwith
Enable/DisableFunction
(1)
IntegratedESDProtection
InTapeandReel.T1Suffix=1,000Units,16mmTapeWidth,13--inchReel.
PQFN88
PLASTIC
V
TTS1
V
TTS2
N
C
QuiescentCurrent
TemperatureCompensation
(1)
V
GS1
RF
inS1
V
GS2
RF
outS2
/V
DS2
V
GLS1
NC
NC
NC
RF
inS1
V
GS1
1
2
3
4
5
6
242322212019
R
F
o
u
t
S
1
/
V
D
S
1
R
F
i
n
S
2
N
C
V
G
S
2
V
T
T
S
2
18
17
16
15
14
13
789101112
V
T
T
S
1
V
G
L
S
2
N
C
N
C
N
C
N
C
NC
NC
NC
NC
NC
RF
outS2
/V
DS2
RF
outS1
/V
DS1
RF
inS2
nections
oAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl
tp:///Documentation/ApplicationNotes--AN1977orAN1987.
FreescaleSemiconductor,Inc.,2009,htsreserved.
MW7IC008NT1
1
RFDeviceData
FreescaleSemiconductor,Inc.
mRatings
Rating
Drain--SourceVoltage
Gate--SourceVoltage
OperatingVoltage
StorageTemperatureRange
OperatingJunctionTemperature
100MHzCWOperation@T
A
=25C
(3)
400MHzCWOperation@T
A
=25C
(3)
900MHzCWOperation@T
A
=25C
(3)
InputPower100MHz
400MHz
900MHz
P
in
Symbol
V
DSS
V
GS
V
DD
T
stg
T
J
CW
Value
--0.5,+65
--6.0,+12
32,+0
--65to+150
150
11
6
5
27
23
38
Unit
Vdc
Vdc
Vdc
C
C
W
W
W
dBm
lCharacteristics
Characteristic
ThermalResistance,JunctiontoCase
(CWSignal@100MHz)
(CaseTemperature82C,P
out
=11WCW)
(CWSignal@400MHz)
(CaseTemperature87C,P
out
=9WCW)
(CWSignal@900MHz)
(CaseTemperature86C,P
out
=6.5WCW)
Symbol
R
JC
Stage1,28Vdc,I
DQ1
=25mA
Stage2,28Vdc,I
DQ2
=75mA
Stage1,28Vdc,I
DQ1
=25mA
Stage2,28Vdc,I
DQ2
=75mA
Stage1,28Vdc,I
DQ1
=25mA
Stage2,28Vdc,I
DQ2
=75mA
5.3
4.9
Value
(1,2)
Unit
C/W
4.4
2.7
3.5
3.2
tectionCharacteristics
TestMethodology
HumanBodyModel(perJESD22--A114)
MachineModel(perEIA/JESD22--A115)
ChargeDeviceModel(perJESD22--C101)
Class
1B
A
III
reSensitivityLevel
TestMethodology
PerJESD22--A113,IPC/JEDECJ--STD--020
Rating
3
PackagePeakTemperature
260
Unit
C
lculatoravailableat/Software&Tools/DevelopmentTools/CalculatorstoaccessMTTF
calculatorsbyproduct.
oAN1955,tp:///rf.
SelectDocumentation/ApplicationNotes--AN1955.
ngsFcalculator(referencedinNote1).
MW7IC008NT1
2
RFDeviceData
FreescaleSemiconductor,Inc.