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MCD26-16IO1B中文资料

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2024年6月3日发(作者:朱盼晴)

元器件交易网

MCC 26

MCD 26

Thyristor Modules

Thyristor/Diode Modules

I

TRMS

=2x50 A

I

TAVM

=2x32 A

V

RRM

=800-1600 V

TO-240 AA

2

1

3

6

7

4

V

RSM

V

DSM

V

900

1300

1500

1700

V

RRM

V

DRM

V

800

1200

1400

1600

Type

Version

MCC 26-08

MCC 26-12

MCC 26-14

MCC 26-16

1 B

io1 B /

io1 B /

io1 B /

io1 B /

8 B

io8 B

io8 B

io8 B

io8 B

Version

MCD 26-08

MCD 26-12

MCD 26-14

MCD 26-16

1 B8 B

5

io1 B /io8 B

io1 B /io8 B

io1 B /io8 B

io1 B /io8 B

3671542

MCC

Version 1 B

Symbol

I

TRMS

, I

FRMS

I

TAVM

, I

FAVM

I

TSM

, I

FSM

Conditions

T

VJ

= T

VJM

T

C

= 75°C; 180° sine

T

C

= 85°C; 180° sine

T

VJ

= 45°C;

V

R

= 0

T

VJ

= T

VJM

V

R

= 0

i

2

dtT

VJ

= 45°C

V

R

= 0

T

VJ

= T

VJM

V

R

= 0

(di/dt)

cr

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

Maximum Ratings

50

32

27

520

560

460

500

1350

1300

1050

1030

150

A

A

A

A

A

A

A

A

2

s

A

2

s

A

2

s

A

2

s

A/µs

Features

500

1000

10

5

0.5

10

-40...+125

125

-40...+125

50/60 Hz, RMS

I

ISOL

≤ 1 mA

t = 1 min

t = 1 s

3000

3600

A/µs

V/µs

W

W

W

V

°C

°C

°C

V~

V~

•International standard package,

JEDEC TO-240 AA

•Direct copper bonded Al

2

O

3

-ceramic

base plate

•Planar passivated chips

•Isolation voltage 3600 V~

•UL registered, E 72873

•Gate-cathode twin pins for version 1B

Applications

•DC motor control

•Softstart AC motor controller

•Light, heat and temperature control

Advantages

•Space and weight savings

•Simple mounting with two screws

•Improved temperature and power cycling

•Reduced protection circuits

4

1

9

31542

MCD

Version 1 B

36152

MCC

Version 8 B

3152

MCD

Version 8 B

T

VJ

= T

VJM

repetitive, I

T

= 45 A

f =50 Hz, t

P

= 200 µs

V

D

=

2

/

3

V

DRM

I

G

= 0.45 Anon repetitive, I

T

= I

TAVM

di

G

/dt = 0.45 A/µs

T

VJ

= T

VJM

;V

DR

=

2

/

3

V

DRM

R

GK

= ∞; method 1 (linear voltage rise)

T

VJ

= T

VJM

I

T

= I

TAVM

t

P

=30 µs

t

P

=300 µs

(dv/dt)

cr

P

GM

P

GAV

V

RGM

T

VJ

T

VJM

T

stg

V

ISOL

M

d

Weight

Mounting torque (M5)

Terminal connection torque (M5)

Typical including screws

2.5-4.0/22-35Nm/.

2.5-4.0/22-35Nm/.

90g

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

© 2004 IXYS All rights reserved

1 - 4

元器件交易网

MCC 26

MCD 26

Symbol

I

RRM

, I

DRM

V

T

, V

F

V

T0

r

T

V

GT

I

GT

V

GD

I

GD

I

L

I

H

t

gd

t

q

Q

S

I

RM

R

thJC

R

thJK

d

S

d

A

a

Conditions

T

VJ

= T

VJM

; V

R

= V

RRM

; V

D

= V

DRM

I

T

, I

F

= 80 A; T

VJ

= 25°C

For power-loss calculations only (T

VJ

= 125°C)

V

D

= 6 V;

V

D

= 6 V;

T

VJ

= T

VJM

;

T

VJ

= 25°C

T

VJ

= -40°C

T

VJ

= 25°C

T

VJ

= -40°C

V

D

= /

3

V

DRM

2

Characteristic Values

3

1.64

0.85

11.0

1.5

1.6

100

200

0.2

10

450

200

2

typ.150

50

6

0.88

0.44

1.08

0.54

12.7

9.6

50

mA

V

V

mΩ

V

V

mA

mA

V

mA

mA

mA

µs

µs

µC

A

K/W

K/W

K/W

K/W

mm

mm

m/s

2

V

G

10

1: I

GT

, T

VJ

= 125°C

V

2: I

GT

, T

VJ

= 25°C

3: I

GT

, T

VJ

= -40°C

1

1

2

3

5

4

6

T

VJ

= 25°C; t

P

= 10 µs; V

D

= 6 V

I

G

= 0.45 A; di

G

/dt = 0.45 A/µs

T

VJ

= 25°C; V

D

= 6 V; R

GK

= ∞

T

VJ

= 25°C; V

D

= 1/2 V

DRM

I

G

= 0.45 A; di

G

/dt = 0.45 A/µs

T

VJ

= T

VJM

; I

T

= 20 A, t

P

= 200 µs; -di/dt = 10 A/µs

V

R

= 100 V; dv/dt = 20 V/µs; V

D

= 2/3 V

DRM

T

VJ

= T

VJM

; I

T

, I

F

= 25 A, -di/dt = 0.64 A/µs

per thyristor/diode; DC current

per module

per thyristor/diode; DC current

per module

Creepage distance on surface

Strike distance through air

Maximum allowable acceleration

4: P

GAV

= 0.5 W

I

GD

, T

VJ

= 125°C

0.1

10

0

10

1

10

2

5: P

GM

= 5 W

6: P

GM

= 10 W

10

3

I

G

mA

10

4

Fig. 1 Gate trigger characteristics

1000

T

VJ

= 25°C

µs

t

gd

100

typ.

Limit

other values

see Fig. 8/9

Optional accessories for module-type MCC 26 version 1 B

Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode

= red

Type ZY 200L(L = Left for pin pair 4/5)UL 758, style 1385,

Type ZY 200R(R = right for pin pair 6/7)CSA class 5851, guide 460-1-1

10

1

10100

mA

I

G

1000

Fig. 2 Gate trigger delay time

Dimensions in mm (1 mm = 0.0394")

MCC Version 1 BMCC Version 8 BMCD Version 8 B

IXYS reserves the right to change limits, test conditions and dimensions

2 - 4

© 2004 IXYS All rights reserved

4

1

9

2024年6月3日发(作者:朱盼晴)

元器件交易网

MCC 26

MCD 26

Thyristor Modules

Thyristor/Diode Modules

I

TRMS

=2x50 A

I

TAVM

=2x32 A

V

RRM

=800-1600 V

TO-240 AA

2

1

3

6

7

4

V

RSM

V

DSM

V

900

1300

1500

1700

V

RRM

V

DRM

V

800

1200

1400

1600

Type

Version

MCC 26-08

MCC 26-12

MCC 26-14

MCC 26-16

1 B

io1 B /

io1 B /

io1 B /

io1 B /

8 B

io8 B

io8 B

io8 B

io8 B

Version

MCD 26-08

MCD 26-12

MCD 26-14

MCD 26-16

1 B8 B

5

io1 B /io8 B

io1 B /io8 B

io1 B /io8 B

io1 B /io8 B

3671542

MCC

Version 1 B

Symbol

I

TRMS

, I

FRMS

I

TAVM

, I

FAVM

I

TSM

, I

FSM

Conditions

T

VJ

= T

VJM

T

C

= 75°C; 180° sine

T

C

= 85°C; 180° sine

T

VJ

= 45°C;

V

R

= 0

T

VJ

= T

VJM

V

R

= 0

i

2

dtT

VJ

= 45°C

V

R

= 0

T

VJ

= T

VJM

V

R

= 0

(di/dt)

cr

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

t = 10 ms(50 Hz), sine

t = 8.3 ms(60 Hz), sine

Maximum Ratings

50

32

27

520

560

460

500

1350

1300

1050

1030

150

A

A

A

A

A

A

A

A

2

s

A

2

s

A

2

s

A

2

s

A/µs

Features

500

1000

10

5

0.5

10

-40...+125

125

-40...+125

50/60 Hz, RMS

I

ISOL

≤ 1 mA

t = 1 min

t = 1 s

3000

3600

A/µs

V/µs

W

W

W

V

°C

°C

°C

V~

V~

•International standard package,

JEDEC TO-240 AA

•Direct copper bonded Al

2

O

3

-ceramic

base plate

•Planar passivated chips

•Isolation voltage 3600 V~

•UL registered, E 72873

•Gate-cathode twin pins for version 1B

Applications

•DC motor control

•Softstart AC motor controller

•Light, heat and temperature control

Advantages

•Space and weight savings

•Simple mounting with two screws

•Improved temperature and power cycling

•Reduced protection circuits

4

1

9

31542

MCD

Version 1 B

36152

MCC

Version 8 B

3152

MCD

Version 8 B

T

VJ

= T

VJM

repetitive, I

T

= 45 A

f =50 Hz, t

P

= 200 µs

V

D

=

2

/

3

V

DRM

I

G

= 0.45 Anon repetitive, I

T

= I

TAVM

di

G

/dt = 0.45 A/µs

T

VJ

= T

VJM

;V

DR

=

2

/

3

V

DRM

R

GK

= ∞; method 1 (linear voltage rise)

T

VJ

= T

VJM

I

T

= I

TAVM

t

P

=30 µs

t

P

=300 µs

(dv/dt)

cr

P

GM

P

GAV

V

RGM

T

VJ

T

VJM

T

stg

V

ISOL

M

d

Weight

Mounting torque (M5)

Terminal connection torque (M5)

Typical including screws

2.5-4.0/22-35Nm/.

2.5-4.0/22-35Nm/.

90g

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

© 2004 IXYS All rights reserved

1 - 4

元器件交易网

MCC 26

MCD 26

Symbol

I

RRM

, I

DRM

V

T

, V

F

V

T0

r

T

V

GT

I

GT

V

GD

I

GD

I

L

I

H

t

gd

t

q

Q

S

I

RM

R

thJC

R

thJK

d

S

d

A

a

Conditions

T

VJ

= T

VJM

; V

R

= V

RRM

; V

D

= V

DRM

I

T

, I

F

= 80 A; T

VJ

= 25°C

For power-loss calculations only (T

VJ

= 125°C)

V

D

= 6 V;

V

D

= 6 V;

T

VJ

= T

VJM

;

T

VJ

= 25°C

T

VJ

= -40°C

T

VJ

= 25°C

T

VJ

= -40°C

V

D

= /

3

V

DRM

2

Characteristic Values

3

1.64

0.85

11.0

1.5

1.6

100

200

0.2

10

450

200

2

typ.150

50

6

0.88

0.44

1.08

0.54

12.7

9.6

50

mA

V

V

mΩ

V

V

mA

mA

V

mA

mA

mA

µs

µs

µC

A

K/W

K/W

K/W

K/W

mm

mm

m/s

2

V

G

10

1: I

GT

, T

VJ

= 125°C

V

2: I

GT

, T

VJ

= 25°C

3: I

GT

, T

VJ

= -40°C

1

1

2

3

5

4

6

T

VJ

= 25°C; t

P

= 10 µs; V

D

= 6 V

I

G

= 0.45 A; di

G

/dt = 0.45 A/µs

T

VJ

= 25°C; V

D

= 6 V; R

GK

= ∞

T

VJ

= 25°C; V

D

= 1/2 V

DRM

I

G

= 0.45 A; di

G

/dt = 0.45 A/µs

T

VJ

= T

VJM

; I

T

= 20 A, t

P

= 200 µs; -di/dt = 10 A/µs

V

R

= 100 V; dv/dt = 20 V/µs; V

D

= 2/3 V

DRM

T

VJ

= T

VJM

; I

T

, I

F

= 25 A, -di/dt = 0.64 A/µs

per thyristor/diode; DC current

per module

per thyristor/diode; DC current

per module

Creepage distance on surface

Strike distance through air

Maximum allowable acceleration

4: P

GAV

= 0.5 W

I

GD

, T

VJ

= 125°C

0.1

10

0

10

1

10

2

5: P

GM

= 5 W

6: P

GM

= 10 W

10

3

I

G

mA

10

4

Fig. 1 Gate trigger characteristics

1000

T

VJ

= 25°C

µs

t

gd

100

typ.

Limit

other values

see Fig. 8/9

Optional accessories for module-type MCC 26 version 1 B

Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode

= red

Type ZY 200L(L = Left for pin pair 4/5)UL 758, style 1385,

Type ZY 200R(R = right for pin pair 6/7)CSA class 5851, guide 460-1-1

10

1

10100

mA

I

G

1000

Fig. 2 Gate trigger delay time

Dimensions in mm (1 mm = 0.0394")

MCC Version 1 BMCC Version 8 BMCD Version 8 B

IXYS reserves the right to change limits, test conditions and dimensions

2 - 4

© 2004 IXYS All rights reserved

4

1

9

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