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2024年2月25日发(作者：广盼盼)

元器件交易网8810Common-Drain Dual N-Channel Enhancement Mode Field

Effect TransistorGeneral DescriptionThe AO8810 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications. It is ESD protected.

AO8810L is offered in a lead-free package. Standard

Product AO8810 is Pb-free (meets ROHS & Sony 259

specifications). AO8810L is a Green Product ordering

option. AO8810 and AO8810L are electrically esVDS (V) = 20VID = 7 A (VGS = 4.5V)RDS(ON) < 20mΩ (VGS = 4.5V)RDS(ON) < 24mΩ (VGS = 2.5V)RDS(ON) < 32mΩ (VGS = 1.8V)ESD Rating: 2000V HBMTSSOP-8Top ViewD1/D2S1S1G112348765D1/D2S2S2G2D1 D2

G1G2

Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageVGSGate-Source VoltageContinuous Drain

Current

APulsed Drain Current

BTA=25°CPower Dissipation

ATA=70°CJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient

AMaximum Junction-to-Ambient

AMaximum Junction-to-Lead

CTA=25°CTA=70°CIDIDMPDTJ, TSTGMaximum20±875.7301.51-55 to 150UnitsVVAW°CSymbolt ≤ 10sSteady-StateSteady-StateRθJARθJLTyp648953Max8312070Units°C/W°C/W°C/WAlpha & Omega Semiconductor, Ltd.

元器件交易网8810Electrical Characteristics (TJ=25°C unless otherwise noted)ParameterSymbolSTATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)RDS(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain currentConditionsID=250µA, VGS=0V

VDS=16V, VGS=0V

TJ=55°CVDS=0V, VGS=±4.5VVDS=0V, VGS=±8VVDS=VGS

ID=250µAVGS=4.5V, VDS=5VVGS=4.5V, ID=7A

TJ=125°C0.43016.5232024290.762028243212.50.6Min2015±1±101TypMaxUnitsVµAµAµAVAmΩmΩmΩSVApFpFpFΩnCnCnCnsnsnsnsnsnCgFSVSDISVGS=2.5V, ID=5.5A

VGS=1.8V, ID=5A

Forward TransconductanceVDS=5V, ID=7ADiode Forward VoltageIS=1A,VGS=0VMaximum Body-Diode Continuous CurrentStatic Drain-Source On-ResistanceDYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssReverse Transfer CapacitanceRgGate resistanceSWITCHING PARAMETERSQgTotal Gate ChargeQgsGate Source ChargeQgdGate Drain ChargetD(on)Turn-On DelayTimetrTurn-On Rise TimetD(off)tftrrQrrTurn-Off DelayTimeTurn-Off Fall TimeVGS=0V, VDS=10V, f=1MHzVGS=0V, VDS=0V, f=1MHz.5160.83.86.212.751.71617.76.7VGS=4.5V, VDS=10V, ID=7AVGS=5V, VDS=10V, RL=1.35Ω,

RGEN=3ΩIF=7A, dI/dt=100A/µsBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=7A, dI/dt=100A/µs 2A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A

=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SOA curve provides a single pulse rating.

Rev 3 : June 2005THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT & Omega Semiconductor, Ltd.

元器件交易网8810TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS308VVGS =2V20VGS =1.5V)A(DI10VGS =1V0012345VDS(Volts)Figure 1: On-Regions Characteristics5040)Ωm(30V)GS =1.8VNO(DSV =2.5VRGS20VGS =4.5V1005101520ID(A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage60ID=6.5A50)Ωm40()NO(DSR30125°C2025°C1002468VGS(Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.20VGS=5V15)A(D10I5125°C25°C00.00.51.01.52.02.5VGS(Volts)Figure 2: Transfer Characteristics1.6eID=6.5AcVGS=1.8Vnats1.4iVGS=2.5VseRVGS=4.5V-NO1.2

ezilamr1.0No0.85150175Temperature (°C)Figure 4: On-Resistance vs. Junction

Temperature1E+011E+001E-01125°CS1E-021E-031E-0425°C1E-050.00.20.40.60.81.0VSD(Volts)Figure 6: Body-Diode CharacteristicsI(A)

元器件交易网8810TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS2000VDS=10VID=7ACapacitance

(pF)1600Ciss120VDS(Volts)Figure 8: Capacitance CharacteristicsCrssCoss54VGS(Volts)3210Qg (nC)Figure 7: Gate-Charge Characteristics100.0TJ(Max)=150°CTA=25°CRDS(ON)

limited10µs100µs1ms0.1s10msPower

(W)40TJ(Max)=150°CTA=25°CID

(Amps)10.030201.01s10sDC0.10.11VDS (Volts)Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)101001000.0010.010.Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA

Normalized

Transient

Thermal

ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=83°C/W1In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse0.1PDTonT0.010.000010.00010.0010.010.Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceAlpha & Omega Semiconductor, Ltd.