2024年4月7日发(作者：琴凡儿)
元器件交易网
FQP18N20V2/FQPF18N20V2
QFET
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
TM
Features
•
•
•
•
•
•
18A, 200V, R
DS(on)
= 0.14Ω @V
GS
= 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
G
!
G
DS
▲
●
●
TO-220
FQP Series
G
D
S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current- Pulsed
(Note 1)
FQP18N20V2
18
11.9
72
FQPF18N20V2
200
Units
V
18 A
11.9 A
72 A
± 30V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
340
18
12.3
6.5
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
123
0.99
-55 to +150
300
40
0.32
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N20V2
1.01
0.5
62.5
FQPF18N20V2
3.1
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation Rev. B, August 2002
元器件交易网
FQP18N20V2/FQPF18N20V2
Electrical Characteristics
T = 25°C unless otherwise noted
C
SymbolParameterTest ConditionsMinTypMaxUnits
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25°C
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
200
--
--
--
--
--
--
0.25
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 9 A
V
DS
= 40 V, I
D
= 9 A
(Note 4)
3.0
--
--
--
0.12
11
5.0
0.14
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
--
830
200
25
70
135
1080
260
33
--
--
pF
pF
pF
pF
pF
V
DS
= 160 V, V
GS
= 0 V,
f = 1.0 MHz
V
DS
= 0V to 160 V, V
GS
= 0 V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 100 V, I
D
= 18 A,
R
G
= 25 Ω
(Note 4, 5)
--
--
--
--
--
--
--
16
133
38
62
20
5.6
10
40
275
85
135
26
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 160 V, I
D
= 18 A,
V
GS
= 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 18 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 18 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
158
1.0
18
72
1.5
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.58mH, I
AS
= 18A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 18A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation Rev. B, August 2002
2024年4月7日发(作者：琴凡儿)
元器件交易网
FQP18N20V2/FQPF18N20V2
QFET
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
TM
Features
•
•
•
•
•
•
18A, 200V, R
DS(on)
= 0.14Ω @V
GS
= 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
G
!
G
DS
▲
●
●
TO-220
FQP Series
G
D
S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current- Pulsed
(Note 1)
FQP18N20V2
18
11.9
72
FQPF18N20V2
200
Units
V
18 A
11.9 A
72 A
± 30V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
340
18
12.3
6.5
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
123
0.99
-55 to +150
300
40
0.32
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N20V2
1.01
0.5
62.5
FQPF18N20V2
3.1
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation Rev. B, August 2002
元器件交易网
FQP18N20V2/FQPF18N20V2
Electrical Characteristics
T = 25°C unless otherwise noted
C
SymbolParameterTest ConditionsMinTypMaxUnits
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25°C
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
200
--
--
--
--
--
--
0.25
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 9 A
V
DS
= 40 V, I
D
= 9 A
(Note 4)
3.0
--
--
--
0.12
11
5.0
0.14
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
--
830
200
25
70
135
1080
260
33
--
--
pF
pF
pF
pF
pF
V
DS
= 160 V, V
GS
= 0 V,
f = 1.0 MHz
V
DS
= 0V to 160 V, V
GS
= 0 V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 100 V, I
D
= 18 A,
R
G
= 25 Ω
(Note 4, 5)
--
--
--
--
--
--
--
16
133
38
62
20
5.6
10
40
275
85
135
26
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 160 V, I
D
= 18 A,
V
GS
= 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 18 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 18 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
158
1.0
18
72
1.5
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.58mH, I
AS
= 18A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 18A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation Rev. B, August 2002