2024年5月26日发(作者：宰寄柔)
元器件交易网
Description
Agilent Technologies’s
ATF-58143 is a high dynamic
range, low noise E-PHEMT
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
The combination of high gain,
high linearity and low noise
makes the ATF-58143 ideal as
low noise amplifier for cellular/
PCS/WCDMA base stations,
wireless local loop, and other
applications that require low
noise and high linearity perfor-
mance in the 450 MHz to 6 GHz
frequency range.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Agilent ATF-58143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Features
•Low noise and high linearity
performance
•Enhancement Mode Technology
[1]
•Excellent uniformity in product
specifications
Surface Mount Package
•Low cost surface mount small
SOT-343
plastic package SOT-343 (4 lead
SC-70) in Tape-and-Reel packaging
option available
•Lead-free option available
Specifications
2 GHz; 3V, 30mA (Typ.)
Pin Connections and
•30.5 dBm output 3
rd
order intercept
Package Marking
•19 dBm output power at 1 dB
•0.5 dB noise figure
DRAIN
x
SOURCE
•16.5 dB associated gain
F
SOURCE
8
GATE
Applications
•Q1 LNA for cellular/PCS/WCDMA
Note:
Top View. Package marking provides orientation
base stations
and identification
•Q1, Q2 LNA and Pre-driver
amplifier for 3–4 GHz WLL
“8F” = Device Code
“x” = Date code character
•Other low noise and high linearity
identifies month of manufacture.
applications at 450 MHz to 6 GHz
Note:
ement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
元器件交易网
ATF-58143 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
P
diss
P
in max.
I
GS
T
CH
T
STG
θ
jc
Parameter
Drain-Source Voltage
[2]
Gate-Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Total Power Dissipation
[3]
RF Input Power
Gate Source Current
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
V
V
mA
mW
dBm
mA
°C
°C
°C/W
Absolute
Maximum
5
-5 to 1
-5 to 1
100
500
+13
5]
2
[5]
150
-65 to 150
162
Notes:
ion of this device above any one of
these parameters may cause permanent
damage.
s DC quiescent conditions.
lead temperature is 25°C. Derate
6.2mW/°C for T
L
> 33°C.
l resistance measured using
150°CLiquid Crystal Measurement method.
device can handle +13 dBm RF Input
Power provided I
GS
is limited to 2 mA. I
GS
at
P
1dB
drive level is bias circuit dependent. See
applications section for additional information.
120
100
80
I
D
S
(
m
A
)
60
40
20
0
01234567
V
DS
(V)
Figure 1. Typical I-V Curves (V
GS
=0.1V per step)
Product Consistency Distribution Charts
[6, 7]
-150
-125
-100
-75
-50
-25
0
0.30.40.5
0.6
NF (dB)
0.70.8
1516
GAIN (dB)
1718
Cpk=2.735
Stdev=0.049
Cpk=1.953
Stdev=0.2610
Cpk=1.036
Stdev=0.509
28293031323334
OIP3 (dBm)
Figure 2. NF @ 3V, 30 mA.
USL = 0.9, Nominal = 0.5
Figure 3. Gain @ 3V, 30 mA.
USL = 18.5, LSL = 15, Nominal = 16.5
Figure 4. OIP3 @ 3V, 30 mA.
LSL = 29, Nominal = 30.5
Notes:
bution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
ements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
2
2024年5月26日发(作者：宰寄柔)
元器件交易网
Description
Agilent Technologies’s
ATF-58143 is a high dynamic
range, low noise E-PHEMT
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
The combination of high gain,
high linearity and low noise
makes the ATF-58143 ideal as
low noise amplifier for cellular/
PCS/WCDMA base stations,
wireless local loop, and other
applications that require low
noise and high linearity perfor-
mance in the 450 MHz to 6 GHz
frequency range.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Agilent ATF-58143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Features
•Low noise and high linearity
performance
•Enhancement Mode Technology
[1]
•Excellent uniformity in product
specifications
Surface Mount Package
•Low cost surface mount small
SOT-343
plastic package SOT-343 (4 lead
SC-70) in Tape-and-Reel packaging
option available
•Lead-free option available
Specifications
2 GHz; 3V, 30mA (Typ.)
Pin Connections and
•30.5 dBm output 3
rd
order intercept
Package Marking
•19 dBm output power at 1 dB
•0.5 dB noise figure
DRAIN
x
SOURCE
•16.5 dB associated gain
F
SOURCE
8
GATE
Applications
•Q1 LNA for cellular/PCS/WCDMA
Note:
Top View. Package marking provides orientation
base stations
and identification
•Q1, Q2 LNA and Pre-driver
amplifier for 3–4 GHz WLL
“8F” = Device Code
“x” = Date code character
•Other low noise and high linearity
identifies month of manufacture.
applications at 450 MHz to 6 GHz
Note:
ement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
元器件交易网
ATF-58143 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
P
diss
P
in max.
I
GS
T
CH
T
STG
θ
jc
Parameter
Drain-Source Voltage
[2]
Gate-Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Total Power Dissipation
[3]
RF Input Power
Gate Source Current
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
V
V
mA
mW
dBm
mA
°C
°C
°C/W
Absolute
Maximum
5
-5 to 1
-5 to 1
100
500
+13
5]
2
[5]
150
-65 to 150
162
Notes:
ion of this device above any one of
these parameters may cause permanent
damage.
s DC quiescent conditions.
lead temperature is 25°C. Derate
6.2mW/°C for T
L
> 33°C.
l resistance measured using
150°CLiquid Crystal Measurement method.
device can handle +13 dBm RF Input
Power provided I
GS
is limited to 2 mA. I
GS
at
P
1dB
drive level is bias circuit dependent. See
applications section for additional information.
120
100
80
I
D
S
(
m
A
)
60
40
20
0
01234567
V
DS
(V)
Figure 1. Typical I-V Curves (V
GS
=0.1V per step)
Product Consistency Distribution Charts
[6, 7]
-150
-125
-100
-75
-50
-25
0
0.30.40.5
0.6
NF (dB)
0.70.8
1516
GAIN (dB)
1718
Cpk=2.735
Stdev=0.049
Cpk=1.953
Stdev=0.2610
Cpk=1.036
Stdev=0.509
28293031323334
OIP3 (dBm)
Figure 2. NF @ 3V, 30 mA.
USL = 0.9, Nominal = 0.5
Figure 3. Gain @ 3V, 30 mA.
USL = 18.5, LSL = 15, Nominal = 16.5
Figure 4. OIP3 @ 3V, 30 mA.
LSL = 29, Nominal = 30.5
Notes:
bution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
ements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
2