2024年4月15日发(作者：郗晨辰)
元器件交易网
G-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
R
GSPbF
G-1PbF
FEATURES
•175 °C T
J
operation
•Center tap configuration
Available
R
Base
common
cathode
2
Base
common
cathode
2
•Low forward voltage drop
•High frequency operation
RoHS*
COMPLIANT
•High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
•Guard ring for enhanced ruggedness and long term
reliability
•Lead (Pb)-free (“PbF” suffix)
•Designed and qualified for industrial level
RR
2
1
Common
3
Anode
cathode
Anode
2
1
Common
3
Anode
cathode
Anode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
80/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHAACTEISTICS VALUES
Rectangular waveform30
80/100
650
0.69
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PAAMETE SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V
R
V
RWM
30CTQ080GSPbF
30CTQ080G-1PbF
80
30CTQ100GSPbF
30CTQ100G-1PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PAAMETE SYMBOL
Maximum average
forward current
See fig. 5
per device
per leg
I
F(AV)
50 % duty cycle at T
C
= 129 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
TEST CONDITIONSVALUES
30
15
A
650
210
7.50
0.50
mJ
A
UNITS
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94191
Revision: 13-Aug-08
For technical questions, contact: diodes-tech@
1
元器件交易网
G-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PAAMETE SYMBOL
15 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
30 A
15 A
30 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM
(1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
0.86
1.05
0.69
0.82
0.28
7.0
500
8.0
10 000
mA
pF
nH
V/µs
V
VALUES UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PAAMETE SYMBOL
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style D
2
PAK
Marking device
Case style TO-262
T
J
, T
Stg
TEST CONDITIONSVALUES
- 55 to 175
3.25
operation
R
thJC
DC
1.63
R
thCS
Mounting surface, smooth and greased0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf ⋅ cm
(lbf ⋅ in)
°C/W
UNITS
°C
30CTQ080GS
30CTQ100GS
30CTQ080G-1
30CTQ100G-1
2
For technical questions, contact: diodes-tech@ument Number: 94191
Revision: 13-Aug-08
2024年4月15日发(作者：郗晨辰)
元器件交易网
G-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
R
GSPbF
G-1PbF
FEATURES
•175 °C T
J
operation
•Center tap configuration
Available
R
Base
common
cathode
2
Base
common
cathode
2
•Low forward voltage drop
•High frequency operation
RoHS*
COMPLIANT
•High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
•Guard ring for enhanced ruggedness and long term
reliability
•Lead (Pb)-free (“PbF” suffix)
•Designed and qualified for industrial level
RR
2
1
Common
3
Anode
cathode
Anode
2
1
Common
3
Anode
cathode
Anode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
80/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHAACTEISTICS VALUES
Rectangular waveform30
80/100
650
0.69
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PAAMETE SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V
R
V
RWM
30CTQ080GSPbF
30CTQ080G-1PbF
80
30CTQ100GSPbF
30CTQ100G-1PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PAAMETE SYMBOL
Maximum average
forward current
See fig. 5
per device
per leg
I
F(AV)
50 % duty cycle at T
C
= 129 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
TEST CONDITIONSVALUES
30
15
A
650
210
7.50
0.50
mJ
A
UNITS
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94191
Revision: 13-Aug-08
For technical questions, contact: diodes-tech@
1
元器件交易网
G-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PAAMETE SYMBOL
15 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
30 A
15 A
30 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM
(1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
0.86
1.05
0.69
0.82
0.28
7.0
500
8.0
10 000
mA
pF
nH
V/µs
V
VALUES UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PAAMETE SYMBOL
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style D
2
PAK
Marking device
Case style TO-262
T
J
, T
Stg
TEST CONDITIONSVALUES
- 55 to 175
3.25
operation
R
thJC
DC
1.63
R
thCS
Mounting surface, smooth and greased0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf ⋅ cm
(lbf ⋅ in)
°C/W
UNITS
°C
30CTQ080GS
30CTQ100GS
30CTQ080G-1
30CTQ100G-1
2
For technical questions, contact: diodes-tech@ument Number: 94191
Revision: 13-Aug-08