2024年4月23日发(作者：才欣德)
元器件交易网
SPbF Series
Vishay High Power Products
Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
•
•
•
•
D
2
PAK
1
N/C
3
Anode
175 °C T
J
operation
Available
Low forward voltage drop
RoHS*
High frequency operation
COMPLIANT
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
•Guard ring for enhanced ruggedness and long term
reliability
•Lead (Pb)-free (“PbF” suffix)
•Designed and qualified for Q101 level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
8 A
80/100 V
Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Range
t
p
= 5 µs sine
8 Apk, T
J
= 125 °C
Range
CHARACTERISTICS VALUES
Rectangular waveform8
80/100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V
R
V
RWM
8TQ080SPbF
80
8TQ100SPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
8
850
A
230
7.50
0.50
mJ
A
A
VALUES UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94266
Revision: 26-May-08
For technical questions, contact: diodes-tech@
1
元器件交易网
SPbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL
8 A
Maximum forward voltage drop
See fig. 1
V
FM
(1)
16 A
8 A
16 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM
(1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
Schottky Rectifier, 8 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.72
0.88
0.58
0.69
0.55
7
500
8
10 000
UNITS
V
mA
pF
nH
V/µs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D
2
PAK
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONSVALUES
- 55 to 175
2.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
8TQ100S
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
2
For technical questions, contact: diodes-tech@ument Number: 94266
Revision: 26-May-08
2024年4月23日发(作者：才欣德)
元器件交易网
SPbF Series
Vishay High Power Products
Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
•
•
•
•
D
2
PAK
1
N/C
3
Anode
175 °C T
J
operation
Available
Low forward voltage drop
RoHS*
High frequency operation
COMPLIANT
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
•Guard ring for enhanced ruggedness and long term
reliability
•Lead (Pb)-free (“PbF” suffix)
•Designed and qualified for Q101 level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
8 A
80/100 V
Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Range
t
p
= 5 µs sine
8 Apk, T
J
= 125 °C
Range
CHARACTERISTICS VALUES
Rectangular waveform8
80/100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V
R
V
RWM
8TQ080SPbF
80
8TQ100SPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
8
850
A
230
7.50
0.50
mJ
A
A
VALUES UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94266
Revision: 26-May-08
For technical questions, contact: diodes-tech@
1
元器件交易网
SPbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL
8 A
Maximum forward voltage drop
See fig. 1
V
FM
(1)
16 A
8 A
16 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM
(1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
Schottky Rectifier, 8 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.72
0.88
0.58
0.69
0.55
7
500
8
10 000
UNITS
V
mA
pF
nH
V/µs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D
2
PAK
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONSVALUES
- 55 to 175
2.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
8TQ100S
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
2
For technical questions, contact: diodes-tech@ument Number: 94266
Revision: 26-May-08