2024年5月21日发(作者：毛聪慧)
元器件交易网
RJK0305DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1353-0900
Rev.9.00
Apr 19, 2006
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.7 m
Ω
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
1
2
4
1, 2, 3 Source
4 Gate
5 Drain
SSS
1
23
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
+16/-12 V
Drain current I
D
30 A
Note1
Drain peak current I
D(pulse)
120 A
Body-drain diode reverse drain current I
DR
30 A
Avalanche current I
AP
Note 2
10 A
Avalanche energy E
AR
Note 2
10 mJ
Channel dissipation Pch
Note3
45 W
Channel to Case Thermal Resistance θch-C 2.78 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.9.00 Apr 19, 2006 page 1 of 6
元器件交易网
RJK0305DPB
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ± 0.1 µA V
GS
= +16/–12 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 µA V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V, I
D
= 1 mA
R
DS(on)
— 6.7 8.0 mΩ I
D
= 15 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
I
D
= 15 A, V
GS
= 4.5 V
Note4
R
DS(on)
— 10 13 mΩ
Forward transfer admittance |y
fs
| — 45 — S I
D
= 15 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 1250 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Output capacitance Coss — 530 — pF
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Crss — 70 — pF
Rg — 0.6 — Ω
Qg — 8 — nC
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 30 A
Qgs — 3.6 — nC
Qgd — 1.5 — nC
t
d(on)
— 7.0 — ns
V
GS
= 10 V, I
D
= 15 A,
V
DD
≅ 10 V,R
L
= 0.67 Ω,
t
r
— 3.0 — ns
Rg = 4.7 Ω
t
d(off)
— 35 — ns
t
f
— 3.0 — ns
V
DF
— 0.85 1.08 V IF = 30 A, V
GS
= 0
Note4
30 — ns t
rr
—
IF = 30 A, V
GS
= 0
di
F
/ dt = 100 A/ µs
Rev.9.00 Apr 19, 2006 page 2 of 6
2024年5月21日发(作者：毛聪慧)
元器件交易网
RJK0305DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1353-0900
Rev.9.00
Apr 19, 2006
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.7 m
Ω
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
1
2
4
1, 2, 3 Source
4 Gate
5 Drain
SSS
1
23
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
+16/-12 V
Drain current I
D
30 A
Note1
Drain peak current I
D(pulse)
120 A
Body-drain diode reverse drain current I
DR
30 A
Avalanche current I
AP
Note 2
10 A
Avalanche energy E
AR
Note 2
10 mJ
Channel dissipation Pch
Note3
45 W
Channel to Case Thermal Resistance θch-C 2.78 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.9.00 Apr 19, 2006 page 1 of 6
元器件交易网
RJK0305DPB
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ± 0.1 µA V
GS
= +16/–12 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 µA V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V, I
D
= 1 mA
R
DS(on)
— 6.7 8.0 mΩ I
D
= 15 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
I
D
= 15 A, V
GS
= 4.5 V
Note4
R
DS(on)
— 10 13 mΩ
Forward transfer admittance |y
fs
| — 45 — S I
D
= 15 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 1250 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Output capacitance Coss — 530 — pF
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Crss — 70 — pF
Rg — 0.6 — Ω
Qg — 8 — nC
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 30 A
Qgs — 3.6 — nC
Qgd — 1.5 — nC
t
d(on)
— 7.0 — ns
V
GS
= 10 V, I
D
= 15 A,
V
DD
≅ 10 V,R
L
= 0.67 Ω,
t
r
— 3.0 — ns
Rg = 4.7 Ω
t
d(off)
— 35 — ns
t
f
— 3.0 — ns
V
DF
— 0.85 1.08 V IF = 30 A, V
GS
= 0
Note4
30 — ns t
rr
—
IF = 30 A, V
GS
= 0
di
F
/ dt = 100 A/ µs
Rev.9.00 Apr 19, 2006 page 2 of 6