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MMDT3946-7-F中文资料

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2024年5月27日发(作者:缪星瑶)

元器件交易网

Lead-free

MMDT3946

COMPLEMENTARY NPN / PNP

SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

·

·

·

·

·

·

Complementary Pair

One 3904-Type NPN,

One 3906-Type PNP

Epitaxial Planar Die Construction

Ideal for Low Power Amplification and Switching

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 3)

K

E

2

B

2

C

1

C

2

A

B

1

E

1

SOT-363

Dim

B

C

Min

0.10

1.15

2.00

0.30

1.80

¾

0.90

0.25

0.10

Max

0.30

1.35

2.20

0.40

2.20

0.10

1.00

0.40

0.25

A

B

C

D

M

G

H

0.65 Nominal

Mechanical Data

·

·

·

·

·

·

·

·

·

Case: SOT-363

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

Terminal Connections: See Diagram

Marking (See Page 3): K46

Ordering & Date Code Information: See Page 3

Weight: 0.006 grams (approximate)

F

H

J

K

L

M

a

J

D

C

2

B

1

E

1

F

L

E

2

B

2

C

1

All Dimensions in mm

E

1

, B

1

, C

1

= PNP3906 Section

E

2

, B

2

, C

2

= NPN3904 Section

Maximum Ratings, NPN 3904 Section

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

@ T

A

= 25°C unless otherwise specified

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

NPN 3904 Section

60

40

6.0

200

200

625

Unit

V

V

V

mA

mW

°C/W

Maximum Ratings, PNP 3906 Section

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

@ T

A

= 25°C unless otherwise specified

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

PNP 3906 Section

-40

-40

-5.0

-200

200

625

Unit

V

V

V

mA

mW

°C/W

Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at /datasheets/.

2. Maximum combined dissipation.

3. No purposefully added lead.

DS30123 Rev. 8 - 21 of 5MMDT3946

ã

Diodes Incorporated

元器件交易网

Electrical Characteristics, NPN 3904 Section

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 4)

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

BL

Symbol

@ T

A

= 25°C unless otherwise specified

Min

60

40

5.0

¾

¾

40

70

100

60

30

¾

0.65

¾

¾

¾

1.0

0.5

100

1.0

300

¾

Max

¾

¾

6.0

50

50

¾

¾

300

¾

¾

0.20

0.30

0.85

0.95

4.0

8.0

10

8.0

400

40

¾

5.0

Unit

V

V

V

nA

nA

Test Condition

I

C

= 10mA, I

E

= 0

I

C

= 1.0mA, I

B

= 0

I

E

= 10mA, I

C

= 0

V

CE

= 30V, V

EB(OFF)

= 3.0V

V

CE

= 30V, V

EB(OFF)

= 3.0V

I

C

= 100µA, V

CE

= 1.0V

I

C

= 1.0mA, V

CE

= 1.0V

I

C

= 10mA, V

CE

= 1.0V

I

C

= 50mA, V

CE

= 1.0V

I

C

= 100mA, V

CE

= 1.0V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

V

CB

= 5.0V, f = 1.0MHz, I

E

= 0

V

EB

= 0.5V, f = 1.0MHz, I

C

= 0

DC Current Gain

h

FE

¾

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

Noise Figure

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Note:

V

CE(SAT)

V

BE(SAT)

V

V

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

f

T

NF

pF

pF

kW

x 10

-4

¾

mS

MHz

dB

V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

V

CE

= 20V, I

C

= 20mA,

f = 100MHz

V

CE

= 5.0V, I

C

= 100mA,

R

S

= 1.0kW,

f = 1.0kHz

V

CC

= 3.0V, I

C

= 10mA,

V

BE(off)

= - 0.5V, I

B1

= 1.0mA

V

CC

= 3.0V, I

C

= 10mA,

I

B1

= I

B2

= 1.0mA

t

d

t

r

t

s

t

f

¾

¾

¾

¾

35

35

200

50

ns

ns

ns

ns

duration pulse test used to minimize self-heating effect.

DS30123 Rev. 8 - 22 of 5

MMDT3946

元器件交易网

Electrical Characteristics, PNP 3906 Section

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 4)

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

BL

Symbol

@ T

A

= 25°C unless otherwise specified

Min

-40

-40

-5.0

¾

¾

60

80

100

60

30

¾

-0.65

¾

¾

¾

2.0

0.1

100

3.0

250

¾

Max

¾

¾

¾

-50

-50

¾

¾

300

¾

¾

-0.25

-0.40

-0.85

-0.95

4.5

10

12

10

400

60

¾

4.0

Unit

V

V

V

nA

nA

Test Condition

I

C

= -10mA, I

E

= 0

I

C

= -1.0mA, I

B

= 0

I

E

= -10mA, I

C

= 0

V

CE

= -30V, V

EB(OFF)

= -3.0V

V

CE

= -30V, V

EB(OFF)

= -3.0V

I

C

= -100µA, V

CE

= -1.0V

I

C

= -1.0mA, V

CE

= -1.0V

I

C

= -10mA, V

CE

= -1.0V

I

C

= -50mA, V

CE

= -1.0V

I

C

= -100mA, V

CE

= -1.0V

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

V

CB

= -5.0V, f = 1.0MHz, I

E

= 0

V

EB

= -0.5V, f = 1.0MHz, I

C

= 0

DC Current Gain

h

FE

¾

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

Noise Figure

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

V

CE(SAT)

V

BE(SAT)

V

V

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

f

T

NF

pF

pF

kW

x 10

-4

¾

mS

MHz

dB

V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

V

CE

= -20V, I

C

= -10mA,

f = 100MHz

V

CE

= -5.0V, I

C

= -100mA,

R

S

= 1.0kW,

f = 1.0kHz

V

CC

= -3.0V, I

C

= -10mA,

V

BE(off)

= 0.5V, I

B1

= -1.0mA

V

CC

= -3.0V, I

C

= -10mA,

I

B1

= I

B2

= -1.0mA

t

d

t

r

t

s

t

f

(Note 5)

¾

¾

¾

¾

35

35

225

75

ns

ns

ns

ns

Ordering Information

Device

MMDT3946-7-F

Packaging

SOT-363

Shipping

3000/Tape & Reel

Notes: 4. Short duration pulse test used to minimize self-heating effect.

5. For Packaging Details, go to our website at /datasheets/.

Marking Information

K46

K46 = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

Date Code Key

Year

Code

1998

J

Month

Code

1999

K

2000

L

Jan

1

2001

M

Feb

2

2002

N

March

3

2003

P

Apr

4

2004

R

May

5

2005

S

Jun

6

2006

T

Jul

7

2007

U

Aug

8

2008

V

Sep

9

2009

W

Oct

O

2010

X

2011

Y

Nov

N

2012

Z

Dec

D

DS30123 Rev. 8 - 23 of 5

Y

M

MMDT3946

元器件交易网

15

C

I

B

O

,

I

N

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

C

O

B

O

,

O

U

T

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

350

P

D

,

P

O

W

E

R

D

I

S

S

I

P

A

T

I

O

N

(

m

W

)

300

250

200

150

100

50

Cobo

f = 1MHz

Note 1

10

5

Cibo

0

0

2550

75

100125

150

175

200

T

A

, AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs

Ambient Temperature (Total Device)

0

0.1

1

10

100

V

CB

, COLLECTOR-BASE VOLTAGE (V)

Fig. 2, Input and Output Capacitance vs.

Collector-Base Voltage (NPN-3904)

1000

1

I

C

I

B

= 10

h

F

E

,

D

C

C

U

R

R

E

N

T

G

A

I

N

T

A

= 125°C

100

T

A

= -25°C

T

A

= +25°C

V

C

E

(

S

A

T

)

,

C

O

L

L

E

C

T

O

R

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

V

CE

= 1.0V

0.1

10

1

0.1

1

10

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 3, Typical DC Current Gain vs

Collector Current (NPN-3904)

10

0.01

0.1110

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 4, Typical Collector-Emitter

Saturation Voltage vs. Collector Current (NPN-3904)

100

C

I

B

O

,

I

N

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

C

O

B

O

,

O

U

T

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

I

C

I

B

= 10

f = 1MHz

V

B

E

(

S

A

T

)

,

B

A

S

E

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

1

10

Cibo

0.1

0.1110

100

1000

1

0.1

Cobo

1

10

100

I

C

, COLLECTOR CURRENT (mA)

Fig. 5, Typical Base-Emitter

Saturation Voltage vs. Collector Current (NPN-3904)

V

CB

, COLLECTOR-BASE VOLTAGE (V)

Fig. 6, Input and Output Capacitance vs.

Collector-Base Voltage (PNP-3906)

DS30123 Rev. 8 - 24 of 5

MMDT3946

元器件交易网

1000

10

I

C

I

B

= 10

T

A

= 125°C

V

C

E

(

S

A

T

)

,

C

O

L

L

E

C

T

O

R

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

V

CE

= 1.0V

h

F

E

,

D

C

C

U

R

R

E

N

T

G

A

I

N

1

100

T

A

= -25°C

T

A

= +25°C

10

0.1

1

0.1

1

10

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 7, Typical DC Current Gain vs

Collector Current (PNP-3906)

0.01

1

10

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 8, Typical Collector-Emitter Saturation Voltage

vs. Collector Current (PNP-3906)

1.0

V

B

E

(

S

A

T

)

,

B

A

S

E

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

0.9

0.8

0.7

0.6

I

C

I

B

= 10

0.5

110100

I

C

, COLLECTOR CURRENT (mA)

Fig. 9, Typical Base-Emitter

Saturation Voltage vs. Collector Current (PNP-3906)

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further

notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither

does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will

agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the

President of Diodes Incorporated.

DS30123 Rev. 8 - 25 of 5

MMDT3946

2024年5月27日发(作者:缪星瑶)

元器件交易网

Lead-free

MMDT3946

COMPLEMENTARY NPN / PNP

SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

·

·

·

·

·

·

Complementary Pair

One 3904-Type NPN,

One 3906-Type PNP

Epitaxial Planar Die Construction

Ideal for Low Power Amplification and Switching

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 3)

K

E

2

B

2

C

1

C

2

A

B

1

E

1

SOT-363

Dim

B

C

Min

0.10

1.15

2.00

0.30

1.80

¾

0.90

0.25

0.10

Max

0.30

1.35

2.20

0.40

2.20

0.10

1.00

0.40

0.25

A

B

C

D

M

G

H

0.65 Nominal

Mechanical Data

·

·

·

·

·

·

·

·

·

Case: SOT-363

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

Terminal Connections: See Diagram

Marking (See Page 3): K46

Ordering & Date Code Information: See Page 3

Weight: 0.006 grams (approximate)

F

H

J

K

L

M

a

J

D

C

2

B

1

E

1

F

L

E

2

B

2

C

1

All Dimensions in mm

E

1

, B

1

, C

1

= PNP3906 Section

E

2

, B

2

, C

2

= NPN3904 Section

Maximum Ratings, NPN 3904 Section

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

@ T

A

= 25°C unless otherwise specified

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

NPN 3904 Section

60

40

6.0

200

200

625

Unit

V

V

V

mA

mW

°C/W

Maximum Ratings, PNP 3906 Section

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1)

@ T

A

= 25°C unless otherwise specified

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

PNP 3906 Section

-40

-40

-5.0

-200

200

625

Unit

V

V

V

mA

mW

°C/W

Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at /datasheets/.

2. Maximum combined dissipation.

3. No purposefully added lead.

DS30123 Rev. 8 - 21 of 5MMDT3946

ã

Diodes Incorporated

元器件交易网

Electrical Characteristics, NPN 3904 Section

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 4)

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

BL

Symbol

@ T

A

= 25°C unless otherwise specified

Min

60

40

5.0

¾

¾

40

70

100

60

30

¾

0.65

¾

¾

¾

1.0

0.5

100

1.0

300

¾

Max

¾

¾

6.0

50

50

¾

¾

300

¾

¾

0.20

0.30

0.85

0.95

4.0

8.0

10

8.0

400

40

¾

5.0

Unit

V

V

V

nA

nA

Test Condition

I

C

= 10mA, I

E

= 0

I

C

= 1.0mA, I

B

= 0

I

E

= 10mA, I

C

= 0

V

CE

= 30V, V

EB(OFF)

= 3.0V

V

CE

= 30V, V

EB(OFF)

= 3.0V

I

C

= 100µA, V

CE

= 1.0V

I

C

= 1.0mA, V

CE

= 1.0V

I

C

= 10mA, V

CE

= 1.0V

I

C

= 50mA, V

CE

= 1.0V

I

C

= 100mA, V

CE

= 1.0V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

V

CB

= 5.0V, f = 1.0MHz, I

E

= 0

V

EB

= 0.5V, f = 1.0MHz, I

C

= 0

DC Current Gain

h

FE

¾

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

Noise Figure

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Note:

V

CE(SAT)

V

BE(SAT)

V

V

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

f

T

NF

pF

pF

kW

x 10

-4

¾

mS

MHz

dB

V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

V

CE

= 20V, I

C

= 20mA,

f = 100MHz

V

CE

= 5.0V, I

C

= 100mA,

R

S

= 1.0kW,

f = 1.0kHz

V

CC

= 3.0V, I

C

= 10mA,

V

BE(off)

= - 0.5V, I

B1

= 1.0mA

V

CC

= 3.0V, I

C

= 10mA,

I

B1

= I

B2

= 1.0mA

t

d

t

r

t

s

t

f

¾

¾

¾

¾

35

35

200

50

ns

ns

ns

ns

duration pulse test used to minimize self-heating effect.

DS30123 Rev. 8 - 22 of 5

MMDT3946

元器件交易网

Electrical Characteristics, PNP 3906 Section

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 4)

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

BL

Symbol

@ T

A

= 25°C unless otherwise specified

Min

-40

-40

-5.0

¾

¾

60

80

100

60

30

¾

-0.65

¾

¾

¾

2.0

0.1

100

3.0

250

¾

Max

¾

¾

¾

-50

-50

¾

¾

300

¾

¾

-0.25

-0.40

-0.85

-0.95

4.5

10

12

10

400

60

¾

4.0

Unit

V

V

V

nA

nA

Test Condition

I

C

= -10mA, I

E

= 0

I

C

= -1.0mA, I

B

= 0

I

E

= -10mA, I

C

= 0

V

CE

= -30V, V

EB(OFF)

= -3.0V

V

CE

= -30V, V

EB(OFF)

= -3.0V

I

C

= -100µA, V

CE

= -1.0V

I

C

= -1.0mA, V

CE

= -1.0V

I

C

= -10mA, V

CE

= -1.0V

I

C

= -50mA, V

CE

= -1.0V

I

C

= -100mA, V

CE

= -1.0V

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

V

CB

= -5.0V, f = 1.0MHz, I

E

= 0

V

EB

= -0.5V, f = 1.0MHz, I

C

= 0

DC Current Gain

h

FE

¾

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

Noise Figure

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

V

CE(SAT)

V

BE(SAT)

V

V

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

f

T

NF

pF

pF

kW

x 10

-4

¾

mS

MHz

dB

V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

V

CE

= -20V, I

C

= -10mA,

f = 100MHz

V

CE

= -5.0V, I

C

= -100mA,

R

S

= 1.0kW,

f = 1.0kHz

V

CC

= -3.0V, I

C

= -10mA,

V

BE(off)

= 0.5V, I

B1

= -1.0mA

V

CC

= -3.0V, I

C

= -10mA,

I

B1

= I

B2

= -1.0mA

t

d

t

r

t

s

t

f

(Note 5)

¾

¾

¾

¾

35

35

225

75

ns

ns

ns

ns

Ordering Information

Device

MMDT3946-7-F

Packaging

SOT-363

Shipping

3000/Tape & Reel

Notes: 4. Short duration pulse test used to minimize self-heating effect.

5. For Packaging Details, go to our website at /datasheets/.

Marking Information

K46

K46 = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

Date Code Key

Year

Code

1998

J

Month

Code

1999

K

2000

L

Jan

1

2001

M

Feb

2

2002

N

March

3

2003

P

Apr

4

2004

R

May

5

2005

S

Jun

6

2006

T

Jul

7

2007

U

Aug

8

2008

V

Sep

9

2009

W

Oct

O

2010

X

2011

Y

Nov

N

2012

Z

Dec

D

DS30123 Rev. 8 - 23 of 5

Y

M

MMDT3946

元器件交易网

15

C

I

B

O

,

I

N

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

C

O

B

O

,

O

U

T

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

350

P

D

,

P

O

W

E

R

D

I

S

S

I

P

A

T

I

O

N

(

m

W

)

300

250

200

150

100

50

Cobo

f = 1MHz

Note 1

10

5

Cibo

0

0

2550

75

100125

150

175

200

T

A

, AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs

Ambient Temperature (Total Device)

0

0.1

1

10

100

V

CB

, COLLECTOR-BASE VOLTAGE (V)

Fig. 2, Input and Output Capacitance vs.

Collector-Base Voltage (NPN-3904)

1000

1

I

C

I

B

= 10

h

F

E

,

D

C

C

U

R

R

E

N

T

G

A

I

N

T

A

= 125°C

100

T

A

= -25°C

T

A

= +25°C

V

C

E

(

S

A

T

)

,

C

O

L

L

E

C

T

O

R

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

V

CE

= 1.0V

0.1

10

1

0.1

1

10

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 3, Typical DC Current Gain vs

Collector Current (NPN-3904)

10

0.01

0.1110

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 4, Typical Collector-Emitter

Saturation Voltage vs. Collector Current (NPN-3904)

100

C

I

B

O

,

I

N

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

C

O

B

O

,

O

U

T

P

U

T

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

I

C

I

B

= 10

f = 1MHz

V

B

E

(

S

A

T

)

,

B

A

S

E

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

1

10

Cibo

0.1

0.1110

100

1000

1

0.1

Cobo

1

10

100

I

C

, COLLECTOR CURRENT (mA)

Fig. 5, Typical Base-Emitter

Saturation Voltage vs. Collector Current (NPN-3904)

V

CB

, COLLECTOR-BASE VOLTAGE (V)

Fig. 6, Input and Output Capacitance vs.

Collector-Base Voltage (PNP-3906)

DS30123 Rev. 8 - 24 of 5

MMDT3946

元器件交易网

1000

10

I

C

I

B

= 10

T

A

= 125°C

V

C

E

(

S

A

T

)

,

C

O

L

L

E

C

T

O

R

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

V

CE

= 1.0V

h

F

E

,

D

C

C

U

R

R

E

N

T

G

A

I

N

1

100

T

A

= -25°C

T

A

= +25°C

10

0.1

1

0.1

1

10

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 7, Typical DC Current Gain vs

Collector Current (PNP-3906)

0.01

1

10

100

1000

I

C

, COLLECTOR CURRENT (mA)

Fig. 8, Typical Collector-Emitter Saturation Voltage

vs. Collector Current (PNP-3906)

1.0

V

B

E

(

S

A

T

)

,

B

A

S

E

-

E

M

I

T

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

0.9

0.8

0.7

0.6

I

C

I

B

= 10

0.5

110100

I

C

, COLLECTOR CURRENT (mA)

Fig. 9, Typical Base-Emitter

Saturation Voltage vs. Collector Current (PNP-3906)

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further

notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither

does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will

agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the

President of Diodes Incorporated.

DS30123 Rev. 8 - 25 of 5

MMDT3946

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